DE69102101D1 - Verfahren zur Herstellung von hochreinen Kathoden auf Aluminiumbasis für Kathodenzerstäubung. - Google Patents

Verfahren zur Herstellung von hochreinen Kathoden auf Aluminiumbasis für Kathodenzerstäubung.

Info

Publication number
DE69102101D1
DE69102101D1 DE69102101T DE69102101T DE69102101D1 DE 69102101 D1 DE69102101 D1 DE 69102101D1 DE 69102101 T DE69102101 T DE 69102101T DE 69102101 T DE69102101 T DE 69102101T DE 69102101 D1 DE69102101 D1 DE 69102101D1
Authority
DE
Germany
Prior art keywords
sputtering
production
purity aluminum
based cathodes
cathodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69102101T
Other languages
English (en)
Other versions
DE69102101T2 (de
Inventor
Jean-Marc Legresy
Marc-Henri Marticou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rio Tinto France SAS
Original Assignee
Aluminium Pechiney SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aluminium Pechiney SA filed Critical Aluminium Pechiney SA
Publication of DE69102101D1 publication Critical patent/DE69102101D1/de
Application granted granted Critical
Publication of DE69102101T2 publication Critical patent/DE69102101T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
    • C22F1/043—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon of alloys with silicon as the next major constituent

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Conductive Materials (AREA)
  • Continuous Casting (AREA)
DE69102101T 1990-07-10 1991-07-08 Verfahren zur Herstellung von hochreinen Kathoden auf Aluminiumbasis für Kathodenzerstäubung. Expired - Fee Related DE69102101T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9009397A FR2664618B1 (fr) 1990-07-10 1990-07-10 Procede de fabrication de cathodes pour pulverisation cathodique a base d'aluminium de tres haute purete.

Publications (2)

Publication Number Publication Date
DE69102101D1 true DE69102101D1 (de) 1994-06-30
DE69102101T2 DE69102101T2 (de) 1994-09-08

Family

ID=9399012

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69102101T Expired - Fee Related DE69102101T2 (de) 1990-07-10 1991-07-08 Verfahren zur Herstellung von hochreinen Kathoden auf Aluminiumbasis für Kathodenzerstäubung.

Country Status (7)

Country Link
US (1) US5160388A (de)
EP (1) EP0466617B1 (de)
JP (1) JPH04232263A (de)
AU (1) AU643919B2 (de)
CA (1) CA2046580A1 (de)
DE (1) DE69102101T2 (de)
FR (1) FR2664618B1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940006186A (ko) * 1992-06-03 1994-03-23 에또 다께또시 스퍼터링 타겟, 전자장치용 배선방법 및 전자장치
US5693203A (en) * 1992-09-29 1997-12-02 Japan Energy Corporation Sputtering target assembly having solid-phase bonded interface
TW234767B (de) * 1992-09-29 1994-11-21 Nippon En Kk
JP3769761B2 (ja) * 1994-04-28 2006-04-26 住友化学株式会社 アルミニウム合金単結晶ターゲットおよびその製造方法
US5772804A (en) * 1995-08-31 1998-06-30 Kaiser Aluminum & Chemical Corporation Method of producing aluminum alloys having superplastic properties
DE19537765B4 (de) * 1995-10-11 2007-09-06 W.C. Heraeus Gmbh Feinkörniges Sputtertarget mit einem vorgegebenen Breiten- zu Dickenverhältnis sowie Verfahren zur Herstellung von Sputtertargetplatten
FR2744805B1 (fr) * 1996-02-13 1998-03-20 Pechiney Aluminium Cibles de pulverisation cathodique selectionnees par controle ultrasons pour leur faible taux d'emissions de particules
FR2745822B1 (fr) * 1996-03-07 1998-04-17 Pechiney Aluminium Procede de fabrication d'articles en aluminium ou alliage d'aluminium destines a former des cibles de pulverisation cathodique
US5766380A (en) * 1996-11-05 1998-06-16 Sony Corporation Method for fabricating randomly oriented aluminum alloy sputtering targets with fine grains and fine precipitates
US6056857A (en) * 1997-08-13 2000-05-02 Praxair S.T. Technology, Inc. Cryogenic annealing of sputtering targets
US6001227A (en) * 1997-11-26 1999-12-14 Applied Materials, Inc. Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target
KR100625000B1 (ko) 1998-06-09 2006-09-20 토소우 에스엠디, 인크 정량적 스퍼터 타겟 청정도 특성화 방법 및 장치
US20010047838A1 (en) * 2000-03-28 2001-12-06 Segal Vladimir M. Methods of forming aluminum-comprising physical vapor deposition targets; sputtered films; and target constructions
WO2001079569A1 (en) * 2000-04-14 2001-10-25 Tosoh Smd, Inc. Sputter targets and methods of manufacturing same to reduce particulate emission during sputtering
US20020184970A1 (en) * 2001-12-13 2002-12-12 Wickersham Charles E. Sptutter targets and methods of manufacturing same to reduce particulate emission during sputtering
US6739196B2 (en) 2000-05-11 2004-05-25 Tosoh Smd, Inc. Cleanliness evaluation in sputter targets using phase
WO2002081767A2 (en) * 2001-04-04 2002-10-17 Tosoh Smd, Inc. A method for determining a critical size of an inclusion in aluminum or aluminum alloy sputtering target
US6895342B2 (en) * 2001-08-09 2005-05-17 Tosoh Smd, Inc. Method and apparatus for non-destructive target cleanliness characterization by types of flaws sorted by size and location
JP2003306767A (ja) * 2002-04-16 2003-10-31 Canon Inc 堆積膜形成方法
US20040256218A1 (en) * 2002-05-31 2004-12-23 Glass Howard L. Thin films and methods of forming thin films utilizing ECAE-targets
WO2005064037A2 (en) * 2003-12-22 2005-07-14 Cabot Corporation High integrity sputtering target material and method for producing bulk quantities of same
CN101374611B (zh) * 2006-03-07 2015-04-08 卡伯特公司 制备变形金属制品的方法
WO2008134516A2 (en) * 2007-04-27 2008-11-06 Honeywell International Inc. Novel manufacturing design and processing methods and apparatus for sputtering targets
WO2010085316A1 (en) 2009-01-22 2010-07-29 Tosoh Smd, Inc. Monolithic aluminum alloy target and method of manufacturing

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2570304B1 (fr) * 1984-09-19 1986-11-14 Cegedur Procede de reglage du niveau de la ligne de contact de la surface libre du metal avec la lingotiere dans une coulee verticale
JPS61124566A (ja) * 1984-11-19 1986-06-12 Mitsubishi Metal Corp スパツタリング用Ａｌ−Ｓｉ系合金タ−ゲツト板材の製造法
US4797164A (en) * 1986-09-30 1989-01-10 Swiss Aluminum Ltd. Process for manufacturing a fine-grained recrystallized sheet
JPS63161161A (ja) * 1986-12-23 1988-07-04 Nippon Mining Co Ltd Ａｌ−Ｓｉ系合金製タ−ゲツトとその製造方法

Also Published As

Publication number Publication date
EP0466617A1 (de) 1992-01-15
EP0466617B1 (de) 1994-05-25
JPH04232263A (ja) 1992-08-20
FR2664618B1 (fr) 1993-10-08
FR2664618A1 (fr) 1992-01-17
AU8025091A (en) 1992-01-16
AU643919B2 (en) 1993-11-25
US5160388A (en) 1992-11-03
CA2046580A1 (fr) 1992-01-11
DE69102101T2 (de) 1994-09-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee