DE69102101D1 - Verfahren zur Herstellung von hochreinen Kathoden auf Aluminiumbasis für Kathodenzerstäubung. - Google Patents
Verfahren zur Herstellung von hochreinen Kathoden auf Aluminiumbasis für Kathodenzerstäubung.Info
- Publication number
- DE69102101D1 DE69102101D1 DE69102101T DE69102101T DE69102101D1 DE 69102101 D1 DE69102101 D1 DE 69102101D1 DE 69102101 T DE69102101 T DE 69102101T DE 69102101 T DE69102101 T DE 69102101T DE 69102101 D1 DE69102101 D1 DE 69102101D1
- Authority
- DE
- Germany
- Prior art keywords
- sputtering
- production
- purity aluminum
- based cathodes
- cathodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
- C22F1/043—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon of alloys with silicon as the next major constituent
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Conductive Materials (AREA)
- Continuous Casting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9009397A FR2664618B1 (fr) | 1990-07-10 | 1990-07-10 | Procede de fabrication de cathodes pour pulverisation cathodique a base d'aluminium de tres haute purete. |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69102101D1 true DE69102101D1 (de) | 1994-06-30 |
DE69102101T2 DE69102101T2 (de) | 1994-09-08 |
Family
ID=9399012
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69102101T Expired - Fee Related DE69102101T2 (de) | 1990-07-10 | 1991-07-08 | Verfahren zur Herstellung von hochreinen Kathoden auf Aluminiumbasis für Kathodenzerstäubung. |
Country Status (7)
Country | Link |
---|---|
US (1) | US5160388A (de) |
EP (1) | EP0466617B1 (de) |
JP (1) | JPH04232263A (de) |
AU (1) | AU643919B2 (de) |
CA (1) | CA2046580A1 (de) |
DE (1) | DE69102101T2 (de) |
FR (1) | FR2664618B1 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0573002A1 (de) * | 1992-06-03 | 1993-12-08 | Ryoka Matthey Corporation | Sputtertarget, Verdrahtungsverfahren für elektronische Bauteile sowie ein elektronisches Bauteil |
TW234767B (de) * | 1992-09-29 | 1994-11-21 | Nippon En Kk | |
US5693203A (en) * | 1992-09-29 | 1997-12-02 | Japan Energy Corporation | Sputtering target assembly having solid-phase bonded interface |
JP3769761B2 (ja) * | 1994-04-28 | 2006-04-26 | 住友化学株式会社 | アルミニウム合金単結晶ターゲットおよびその製造方法 |
US5772804A (en) * | 1995-08-31 | 1998-06-30 | Kaiser Aluminum & Chemical Corporation | Method of producing aluminum alloys having superplastic properties |
DE19537765B4 (de) * | 1995-10-11 | 2007-09-06 | W.C. Heraeus Gmbh | Feinkörniges Sputtertarget mit einem vorgegebenen Breiten- zu Dickenverhältnis sowie Verfahren zur Herstellung von Sputtertargetplatten |
FR2744805B1 (fr) * | 1996-02-13 | 1998-03-20 | Pechiney Aluminium | Cibles de pulverisation cathodique selectionnees par controle ultrasons pour leur faible taux d'emissions de particules |
FR2745822B1 (fr) * | 1996-03-07 | 1998-04-17 | Pechiney Aluminium | Procede de fabrication d'articles en aluminium ou alliage d'aluminium destines a former des cibles de pulverisation cathodique |
US5766380A (en) * | 1996-11-05 | 1998-06-16 | Sony Corporation | Method for fabricating randomly oriented aluminum alloy sputtering targets with fine grains and fine precipitates |
US6056857A (en) * | 1997-08-13 | 2000-05-02 | Praxair S.T. Technology, Inc. | Cryogenic annealing of sputtering targets |
US6001227A (en) * | 1997-11-26 | 1999-12-14 | Applied Materials, Inc. | Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target |
WO1999064854A1 (en) | 1998-06-09 | 1999-12-16 | Tosoh Smd, Inc. | Method and apparatus for quantitative sputter target cleanliness characterization |
US20010047838A1 (en) * | 2000-03-28 | 2001-12-06 | Segal Vladimir M. | Methods of forming aluminum-comprising physical vapor deposition targets; sputtered films; and target constructions |
US20020184970A1 (en) * | 2001-12-13 | 2002-12-12 | Wickersham Charles E. | Sptutter targets and methods of manufacturing same to reduce particulate emission during sputtering |
JP5368663B2 (ja) * | 2000-04-14 | 2013-12-18 | トーソー エスエムディー,インク. | スパッターリング時の粒子状放出物を少なくするためのスパッターターゲットとそれを製造する方法 |
US6739196B2 (en) | 2000-05-11 | 2004-05-25 | Tosoh Smd, Inc. | Cleanliness evaluation in sputter targets using phase |
US7087142B2 (en) * | 2001-04-04 | 2006-08-08 | Tosoh Smd, Inc. | Method for determining a critical size of an inclusion in aluminum or aluminum alloy sputtering target |
JP4349904B2 (ja) * | 2001-08-09 | 2009-10-21 | トーソー エスエムディー,インク. | 寸法と位置によって分類された欠陥の種類による、非破壊的なターゲット清浄度特性決定のための方法と装置 |
JP2003306767A (ja) * | 2002-04-16 | 2003-10-31 | Canon Inc | 堆積膜形成方法 |
US20040256218A1 (en) * | 2002-05-31 | 2004-12-23 | Glass Howard L. | Thin films and methods of forming thin films utilizing ECAE-targets |
EP1704266A2 (de) * | 2003-12-22 | 2006-09-27 | Cabot Corporation | Sputtertargetmaterial mit hoher integrität und verfahren zur herstellung von bulkmengen davon |
CN101374611B (zh) | 2006-03-07 | 2015-04-08 | 卡伯特公司 | 制备变形金属制品的方法 |
US9279178B2 (en) | 2007-04-27 | 2016-03-08 | Honeywell International Inc. | Manufacturing design and processing methods and apparatus for sputtering targets |
KR20110106787A (ko) | 2009-01-22 | 2011-09-29 | 토소우 에스엠디, 인크 | 모놀리식 알루미늄 합금 타겟 및 그 제조방법 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2570304B1 (fr) * | 1984-09-19 | 1986-11-14 | Cegedur | Procede de reglage du niveau de la ligne de contact de la surface libre du metal avec la lingotiere dans une coulee verticale |
JPS61124566A (ja) * | 1984-11-19 | 1986-06-12 | Mitsubishi Metal Corp | スパツタリング用Al−Si系合金タ−ゲツト板材の製造法 |
US4797164A (en) * | 1986-09-30 | 1989-01-10 | Swiss Aluminum Ltd. | Process for manufacturing a fine-grained recrystallized sheet |
JPS63161161A (ja) * | 1986-12-23 | 1988-07-04 | Nippon Mining Co Ltd | Al−Si系合金製タ−ゲツトとその製造方法 |
-
1990
- 1990-07-10 FR FR9009397A patent/FR2664618B1/fr not_active Expired - Fee Related
-
1991
- 1991-07-08 DE DE69102101T patent/DE69102101T2/de not_active Expired - Fee Related
- 1991-07-08 EP EP91420231A patent/EP0466617B1/de not_active Expired - Lifetime
- 1991-07-09 US US07/727,043 patent/US5160388A/en not_active Expired - Fee Related
- 1991-07-09 CA CA002046580A patent/CA2046580A1/fr not_active Abandoned
- 1991-07-09 JP JP3168398A patent/JPH04232263A/ja active Pending
- 1991-07-09 AU AU80250/91A patent/AU643919B2/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
CA2046580A1 (fr) | 1992-01-11 |
FR2664618B1 (fr) | 1993-10-08 |
DE69102101T2 (de) | 1994-09-08 |
AU643919B2 (en) | 1993-11-25 |
US5160388A (en) | 1992-11-03 |
AU8025091A (en) | 1992-01-16 |
EP0466617B1 (de) | 1994-05-25 |
EP0466617A1 (de) | 1992-01-15 |
JPH04232263A (ja) | 1992-08-20 |
FR2664618A1 (fr) | 1992-01-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |