DE69025121D1 - Clock control for a memory - Google Patents
Clock control for a memoryInfo
- Publication number
- DE69025121D1 DE69025121D1 DE69025121T DE69025121T DE69025121D1 DE 69025121 D1 DE69025121 D1 DE 69025121D1 DE 69025121 T DE69025121 T DE 69025121T DE 69025121 T DE69025121 T DE 69025121T DE 69025121 D1 DE69025121 D1 DE 69025121D1
- Authority
- DE
- Germany
- Prior art keywords
- memory
- clock control
- clock
- control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/14—Dummy cell management; Sense reference voltage generators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/926—Dummy metallization
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB898923037A GB8923037D0 (en) | 1989-10-12 | 1989-10-12 | Timing control for a memory |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69025121D1 true DE69025121D1 (en) | 1996-03-14 |
DE69025121T2 DE69025121T2 (en) | 1996-08-29 |
Family
ID=10664486
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69025121T Expired - Fee Related DE69025121T2 (en) | 1989-10-12 | 1990-10-11 | Clock control for a memory |
Country Status (5)
Country | Link |
---|---|
US (1) | US5268869A (en) |
EP (1) | EP0422939B1 (en) |
JP (1) | JP2851408B2 (en) |
DE (1) | DE69025121T2 (en) |
GB (1) | GB8923037D0 (en) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0600142B1 (en) * | 1992-11-30 | 1999-05-06 | STMicroelectronics S.r.l. | High performance single port RAM generator architecture |
FR2707790B1 (en) * | 1993-07-12 | 1995-09-15 | Sgs Thomson Microelectronics | Dual access memory. |
JPH0750094A (en) * | 1993-08-05 | 1995-02-21 | Nec Corp | Semiconductor memory circuit |
EP0698884A1 (en) * | 1994-08-24 | 1996-02-28 | Advanced Micro Devices, Inc. | Memory array for microprocessor cache |
JP3132637B2 (en) * | 1995-06-29 | 2001-02-05 | 日本電気株式会社 | Nonvolatile semiconductor memory device |
US5596539A (en) * | 1995-12-28 | 1997-01-21 | Lsi Logic Corporation | Method and apparatus for a low power self-timed memory control system |
DE69632574D1 (en) * | 1996-03-29 | 2004-07-01 | St Microelectronics Srl | Data read management architecture for a memory device, especially non-volatile memory |
EP0801393B1 (en) * | 1996-04-09 | 2004-03-10 | STMicroelectronics S.r.l. | Circuit for determining completion of pre-charge of a generic bit line, particularly for non-volatile memories |
FR2755286B1 (en) * | 1996-10-25 | 1999-01-22 | Sgs Thomson Microelectronics | IMPROVED READ TIME MEMORY |
EP0869506B1 (en) * | 1997-04-03 | 2003-07-02 | STMicroelectronics S.r.l. | Memory device with reduced power dissipation |
KR100256902B1 (en) * | 1997-06-24 | 2000-05-15 | 김영환 | Control circuit for semiconductor memory device |
US6044024A (en) * | 1998-01-14 | 2000-03-28 | International Business Machines Corporation | Interactive method for self-adjusted access on embedded DRAM memory macros |
US6304486B1 (en) * | 1999-12-20 | 2001-10-16 | Fujitsu Limited | Sensing time control device and method |
KR100401509B1 (en) * | 2001-05-31 | 2003-10-17 | 주식회사 하이닉스반도체 | Sense amp circuit of semiconductor memory device |
JP4837841B2 (en) * | 2001-06-12 | 2011-12-14 | 富士通セミコンダクター株式会社 | Static RAM |
JP4339532B2 (en) | 2001-07-25 | 2009-10-07 | 富士通マイクロエレクトロニクス株式会社 | Static memory with self-timing circuit |
JP4639030B2 (en) * | 2002-11-18 | 2011-02-23 | パナソニック株式会社 | Semiconductor memory device |
US6831853B2 (en) * | 2002-11-19 | 2004-12-14 | Taiwan Semiconductor Manufacturing Company | Apparatus for cleaning a substrate |
JP2004199759A (en) * | 2002-12-17 | 2004-07-15 | Fujitsu Ltd | Semiconductor storage device |
JP2004220721A (en) * | 2003-01-16 | 2004-08-05 | Matsushita Electric Ind Co Ltd | Semiconductor memory device |
JP4314056B2 (en) * | 2003-04-17 | 2009-08-12 | パナソニック株式会社 | Semiconductor memory device |
JP4514028B2 (en) * | 2004-05-20 | 2010-07-28 | ルネサスエレクトロニクス株式会社 | Fault diagnosis circuit and fault diagnosis method |
JP2007018584A (en) * | 2005-07-06 | 2007-01-25 | Matsushita Electric Ind Co Ltd | Semiconductor storage device |
FR2903524B1 (en) * | 2006-07-05 | 2008-10-17 | St Microelectronics Sa | MEMORY DEVICE WITH PROGRAMMABLE CONTROL OF ACTIVATION OF READING AMPLIFIERS. |
US7746717B1 (en) * | 2007-09-07 | 2010-06-29 | Xilinx, Inc. | Desensitizing static random access memory (SRAM) to process variation |
KR100866145B1 (en) * | 2007-10-05 | 2008-10-31 | 주식회사 하이닉스반도체 | Semiconductor device and biasing method thereof |
JP2008052906A (en) * | 2007-11-09 | 2008-03-06 | Matsushita Electric Ind Co Ltd | Semiconductor memory device |
US9613714B1 (en) * | 2016-01-19 | 2017-04-04 | Ememory Technology Inc. | One time programming memory cell and memory array for physically unclonable function technology and associated random code generating method |
US10497414B1 (en) * | 2018-06-08 | 2019-12-03 | Arm Limited | Circuitry for tracking bias voltage behavior |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4255679A (en) * | 1978-10-30 | 1981-03-10 | Texas Instruments Incorporated | Depletion load dynamic sense amplifier for MOS random access memory |
US4363111A (en) * | 1980-10-06 | 1982-12-07 | Heightley John D | Dummy cell arrangement for an MOS memory |
US4425633A (en) * | 1980-10-06 | 1984-01-10 | Mostek Corporation | Variable delay circuit for emulating word line delay |
JPS59203298A (en) * | 1983-05-04 | 1984-11-17 | Nec Corp | Semiconductor memory |
US4627032A (en) * | 1983-11-25 | 1986-12-02 | At&T Bell Laboratories | Glitch lockout circuit for memory array |
-
1989
- 1989-10-12 GB GB898923037A patent/GB8923037D0/en active Pending
-
1990
- 1990-10-11 EP EP90311168A patent/EP0422939B1/en not_active Expired - Lifetime
- 1990-10-11 US US07/596,200 patent/US5268869A/en not_active Expired - Lifetime
- 1990-10-11 DE DE69025121T patent/DE69025121T2/en not_active Expired - Fee Related
- 1990-10-12 JP JP2275087A patent/JP2851408B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0422939B1 (en) | 1996-01-31 |
JPH03207086A (en) | 1991-09-10 |
EP0422939A3 (en) | 1991-09-04 |
US5268869A (en) | 1993-12-07 |
JP2851408B2 (en) | 1999-01-27 |
DE69025121T2 (en) | 1996-08-29 |
EP0422939A2 (en) | 1991-04-17 |
GB8923037D0 (en) | 1989-11-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |