DE69022621D1 - Integrierter ferro-elektrischer Kondensator. - Google Patents
Integrierter ferro-elektrischer Kondensator.Info
- Publication number
- DE69022621D1 DE69022621D1 DE69022621T DE69022621T DE69022621D1 DE 69022621 D1 DE69022621 D1 DE 69022621D1 DE 69022621 T DE69022621 T DE 69022621T DE 69022621 T DE69022621 T DE 69022621T DE 69022621 D1 DE69022621 D1 DE 69022621D1
- Authority
- DE
- Germany
- Prior art keywords
- ferro
- integrated
- electric capacitor
- capacitor
- electric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US34782689A | 1989-05-05 | 1989-05-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69022621D1 true DE69022621D1 (de) | 1995-11-02 |
DE69022621T2 DE69022621T2 (de) | 1996-05-30 |
Family
ID=23365438
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69022621T Expired - Fee Related DE69022621T2 (de) | 1989-05-05 | 1990-02-06 | Integrierter ferro-elektrischer Kondensator. |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0396221B1 (de) |
JP (1) | JP2918284B2 (de) |
AU (1) | AU622317B2 (de) |
DE (1) | DE69022621T2 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5519234A (en) * | 1991-02-25 | 1996-05-21 | Symetrix Corporation | Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current |
JP2573384B2 (ja) * | 1990-01-24 | 1997-01-22 | 株式会社東芝 | 半導体記憶装置とその製造方法 |
EP0490288A3 (en) * | 1990-12-11 | 1992-09-02 | Ramtron Corporation | Process for fabricating pzt capacitors as integrated circuit memory elements and a capacitor storage element |
JPH0575057A (ja) * | 1991-07-17 | 1993-03-26 | Sharp Corp | 半導体記憶装置 |
EP0516031A1 (de) * | 1991-05-29 | 1992-12-02 | Ramtron International Corporation | Ferroelektrische Stapelspeicherzelle und Herstellungsverfahren |
US5291436A (en) * | 1991-07-25 | 1994-03-01 | Rohm Co., Ltd. | Ferroelectric memory with multiple-value storage states |
US5189594A (en) * | 1991-09-20 | 1993-02-23 | Rohm Co., Ltd. | Capacitor in a semiconductor integrated circuit and non-volatile memory using same |
JPH0582801A (ja) * | 1991-09-20 | 1993-04-02 | Rohm Co Ltd | 半導体集積回路のキヤパシタおよびこれを用いた不揮発性メモリ |
US5468684A (en) * | 1991-12-13 | 1995-11-21 | Symetrix Corporation | Integrated circuit with layered superlattice material and method of fabricating same |
US5719416A (en) * | 1991-12-13 | 1998-02-17 | Symetrix Corporation | Integrated circuit with layered superlattice material compound |
JP3407204B2 (ja) * | 1992-07-23 | 2003-05-19 | オリンパス光学工業株式会社 | 強誘電体集積回路及びその製造方法 |
US5439840A (en) * | 1993-08-02 | 1995-08-08 | Motorola, Inc. | Method of forming a nonvolatile random access memory capacitor cell having a metal-oxide dielectric |
DE69426208T2 (de) * | 1993-08-05 | 2001-05-17 | Matsushita Electronics Corp | Halbleiterbauelement mit Kondensator und dessen Herstellungsverfahren |
SG79200A1 (en) * | 1995-08-21 | 2001-03-20 | Matsushita Electric Ind Co Ltd | Ferroelectric memory devices and method for testing them |
JP2001168296A (ja) * | 1999-12-14 | 2001-06-22 | Matsushita Electronics Industry Corp | 不揮発性記憶装置およびその駆動方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3602887A1 (de) * | 1986-01-31 | 1987-08-06 | Bayer Ag | Nichtfluechtiger elektronischer speicher |
DE3850567T2 (de) * | 1988-04-22 | 1994-11-03 | Ramtron Int Corp | DRAM-Zelle mit verstärkter Ladung. |
-
1990
- 1990-02-06 DE DE69022621T patent/DE69022621T2/de not_active Expired - Fee Related
- 1990-02-06 EP EP90301199A patent/EP0396221B1/de not_active Expired - Lifetime
- 1990-05-01 AU AU54574/90A patent/AU622317B2/en not_active Ceased
- 1990-05-02 JP JP2115341A patent/JP2918284B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0396221B1 (de) | 1995-09-27 |
JP2918284B2 (ja) | 1999-07-12 |
AU5457490A (en) | 1990-11-08 |
AU622317B2 (en) | 1992-04-02 |
DE69022621T2 (de) | 1996-05-30 |
EP0396221A2 (de) | 1990-11-07 |
EP0396221A3 (de) | 1991-05-08 |
JPH02304796A (ja) | 1990-12-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |