DE69022269T2 - Process for the thermal treatment of silicon. - Google Patents

Process for the thermal treatment of silicon.

Info

Publication number
DE69022269T2
DE69022269T2 DE69022269T DE69022269T DE69022269T2 DE 69022269 T2 DE69022269 T2 DE 69022269T2 DE 69022269 T DE69022269 T DE 69022269T DE 69022269 T DE69022269 T DE 69022269T DE 69022269 T2 DE69022269 T2 DE 69022269T2
Authority
DE
Germany
Prior art keywords
silicon
thermal treatment
thermal
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69022269T
Other languages
German (de)
Other versions
DE69022269D1 (en
Inventor
Izumi Fusegawa
Hirotoshi Yamagshi
Takao Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69022269D1 publication Critical patent/DE69022269D1/en
Publication of DE69022269T2 publication Critical patent/DE69022269T2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/06—Gettering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/071—Heating, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/125—Polycrystalline passivation
DE69022269T 1989-03-31 1990-03-27 Process for the thermal treatment of silicon. Expired - Lifetime DE69022269T2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1082841A JPH02263792A (en) 1989-03-31 1989-03-31 Heat treatment of silicon

Publications (2)

Publication Number Publication Date
DE69022269D1 DE69022269D1 (en) 1995-10-19
DE69022269T2 true DE69022269T2 (en) 1996-05-02

Family

ID=13785616

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69022269T Expired - Lifetime DE69022269T2 (en) 1989-03-31 1990-03-27 Process for the thermal treatment of silicon.

Country Status (4)

Country Link
US (1) US5110404A (en)
EP (1) EP0390672B1 (en)
JP (1) JPH02263792A (en)
DE (1) DE69022269T2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10066124B4 (en) * 2000-11-24 2007-12-13 Mitsubishi Materials Silicon Corp. Silicon wafer used in the production of a single crystal silicon ingot consists of a perfect domain with a lower detection boundary of agglomerates
US8529695B2 (en) 2000-11-22 2013-09-10 Sumco Corporation Method for manufacturing a silicon wafer

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0502471A3 (en) * 1991-03-05 1995-10-11 Fujitsu Ltd Intrinsic gettering of a silicon substrate
JP2546745B2 (en) * 1991-03-15 1996-10-23 信越半導体株式会社 Method for manufacturing semiconductor device
JP2613498B2 (en) * 1991-03-15 1997-05-28 信越半導体株式会社 Heat treatment method for Si single crystal wafer
JPH05102167A (en) * 1991-10-07 1993-04-23 Shin Etsu Handotai Co Ltd Heat treatment of silicon
JPH0684925A (en) * 1992-07-17 1994-03-25 Toshiba Corp Semiconductor substrate and its treatment
JP3232168B2 (en) * 1993-07-02 2001-11-26 三菱電機株式会社 Semiconductor substrate, method of manufacturing the same, and semiconductor device using the semiconductor substrate
JP3341378B2 (en) * 1993-08-25 2002-11-05 富士通株式会社 Method for measuring hydrogen concentration in silicon crystal and method for producing silicon crystal
US5352615A (en) * 1994-01-24 1994-10-04 Motorola, Inc. Denuding a semiconductor substrate
JP2874834B2 (en) * 1994-07-29 1999-03-24 三菱マテリアル株式会社 Intrinsic gettering method for silicon wafer
US5593494A (en) * 1995-03-14 1997-01-14 Memc Electronic Materials, Inc. Precision controlled precipitation of oxygen in silicon
US5635414A (en) * 1995-03-28 1997-06-03 Zakaluk; Gregory Low cost method of fabricating shallow junction, Schottky semiconductor devices
JP3919308B2 (en) * 1997-10-17 2007-05-23 信越半導体株式会社 Method for producing silicon single crystal with few crystal defects and silicon single crystal and silicon wafer produced by this method
US6491752B1 (en) 1999-07-16 2002-12-10 Sumco Oregon Corporation Enhanced n-type silicon material for epitaxial wafer substrate and method of making same
KR100368331B1 (en) * 2000-10-04 2003-01-24 주식회사 실트론 Thermal treatment of semiconductor wafer and semiconductor wafer fabricated by the thermal treatment
JP4605876B2 (en) * 2000-09-20 2011-01-05 信越半導体株式会社 Silicon wafer and silicon epitaxial wafer manufacturing method
TWI290182B (en) 2004-01-27 2007-11-21 Sumco Techxiv Corp Method for predicting precipitation behavior of oxygen in silicon single crystal, determining production parameter thereof, and storage medium storing program for predicting precipitation behavior of oxygen in silicon single crystal
JP2011046565A (en) * 2009-08-27 2011-03-10 Sharp Corp Single crystal silicon ingot, single crystal silicon wafer, single crystal silicon solar cell, and method for manufacturing single crystal silicon ingot

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE251856C (en) *
US4140570A (en) * 1973-11-19 1979-02-20 Texas Instruments Incorporated Method of growing single crystal silicon by the Czochralski method which eliminates the need for post growth annealing for resistivity stabilization
US4140524A (en) * 1974-02-04 1979-02-20 Carpenter Technology Corporation Low alloy band saw steel and method of making the same
JPS583375B2 (en) * 1979-01-19 1983-01-21 超エル・エス・アイ技術研究組合 Manufacturing method of silicon single crystal wafer
JPS56103437A (en) * 1980-01-22 1981-08-18 Fujitsu Ltd Measurement of specific resistance distribution for silicon crystal
GB2080780B (en) * 1980-07-18 1983-06-29 Secr Defence Heat treatment of silicon slices
DE3280219D1 (en) * 1981-03-11 1990-08-30 Fujitsu Ltd METHOD FOR PRODUCING A SEMICONDUCTOR ARRANGEMENT WITH GLOWING A SEMICONDUCTOR BODY.
JPS5821829A (en) * 1981-07-31 1983-02-08 Fujitsu Ltd Manufacture of semiconductor device
US4437922A (en) * 1982-03-26 1984-03-20 International Business Machines Corporation Method for tailoring oxygen precipitate particle density and distribution silicon wafers
JPS59190300A (en) * 1983-04-08 1984-10-29 Hitachi Ltd Method and apparatus for production of semiconductor
US4548654A (en) * 1983-06-03 1985-10-22 Motorola, Inc. Surface denuding of silicon wafer
JPS61201692A (en) * 1985-03-04 1986-09-06 Mitsubishi Metal Corp Method for pulling and growing silicon single crystal with less generation of defect
US4851358A (en) * 1988-02-11 1989-07-25 Dns Electronic Materials, Inc. Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8529695B2 (en) 2000-11-22 2013-09-10 Sumco Corporation Method for manufacturing a silicon wafer
DE10066124B4 (en) * 2000-11-24 2007-12-13 Mitsubishi Materials Silicon Corp. Silicon wafer used in the production of a single crystal silicon ingot consists of a perfect domain with a lower detection boundary of agglomerates

Also Published As

Publication number Publication date
US5110404A (en) 1992-05-05
EP0390672B1 (en) 1995-09-13
EP0390672A2 (en) 1990-10-03
JPH02263792A (en) 1990-10-26
EP0390672A3 (en) 1991-08-28
DE69022269D1 (en) 1995-10-19

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