DE69021402T2 - Verfahren zur Herstellung einer Elektrode für eine elektronenemittierende Vorrichtung. - Google Patents

Verfahren zur Herstellung einer Elektrode für eine elektronenemittierende Vorrichtung.

Info

Publication number
DE69021402T2
DE69021402T2 DE69021402T DE69021402T DE69021402T2 DE 69021402 T2 DE69021402 T2 DE 69021402T2 DE 69021402 T DE69021402 T DE 69021402T DE 69021402 T DE69021402 T DE 69021402T DE 69021402 T2 DE69021402 T2 DE 69021402T2
Authority
DE
Germany
Prior art keywords
electron
electrode
manufacturing
emitting device
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69021402T
Other languages
English (en)
Other versions
DE69021402D1 (de
Inventor
Susan Elizabeth Jacobson
Rosemary Ann Lee
Helen Anne Williams
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
General Electric Co
Original Assignee
General Electric Co PLC
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC, General Electric Co filed Critical General Electric Co PLC
Publication of DE69021402D1 publication Critical patent/DE69021402D1/de
Application granted granted Critical
Publication of DE69021402T2 publication Critical patent/DE69021402T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
DE69021402T 1989-01-18 1990-01-10 Verfahren zur Herstellung einer Elektrode für eine elektronenemittierende Vorrichtung. Expired - Fee Related DE69021402T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8901087A GB2227362B (en) 1989-01-18 1989-01-18 Electronic devices

Publications (2)

Publication Number Publication Date
DE69021402D1 DE69021402D1 (de) 1995-09-14
DE69021402T2 true DE69021402T2 (de) 1996-01-25

Family

ID=10650226

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69021402T Expired - Fee Related DE69021402T2 (de) 1989-01-18 1990-01-10 Verfahren zur Herstellung einer Elektrode für eine elektronenemittierende Vorrichtung.

Country Status (5)

Country Link
US (1) US4968382A (de)
EP (1) EP0379298B1 (de)
JP (1) JPH0362482A (de)
DE (1) DE69021402T2 (de)
GB (1) GB2227362B (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5066358A (en) * 1988-10-27 1991-11-19 Board Of Trustees Of The Leland Stanford Juninor University Nitride cantilevers with single crystal silicon tips
US5026437A (en) * 1990-01-22 1991-06-25 Tencor Instruments Cantilevered microtip manufacturing by ion implantation and etching
US5201992A (en) * 1990-07-12 1993-04-13 Bell Communications Research, Inc. Method for making tapered microminiature silicon structures
US5204581A (en) * 1990-07-12 1993-04-20 Bell Communications Research, Inc. Device including a tapered microminiature silicon structure
EP0729171B1 (de) * 1990-12-28 2000-08-23 Sony Corporation Verfahren zur Herstellung einer flachen Anzeigevorrichtung
US5312514A (en) * 1991-11-07 1994-05-17 Microelectronics And Computer Technology Corporation Method of making a field emitter device using randomly located nuclei as an etch mask
US5399238A (en) * 1991-11-07 1995-03-21 Microelectronics And Computer Technology Corporation Method of making field emission tips using physical vapor deposition of random nuclei as etch mask
KR950004516B1 (ko) * 1992-04-29 1995-05-01 삼성전관주식회사 필드 에미션 디스플레이와 그 제조방법
US5391259A (en) * 1992-05-15 1995-02-21 Micron Technology, Inc. Method for forming a substantially uniform array of sharp tips
US5753130A (en) * 1992-05-15 1998-05-19 Micron Technology, Inc. Method for forming a substantially uniform array of sharp tips
US5302239A (en) * 1992-05-15 1994-04-12 Micron Technology, Inc. Method of making atomically sharp tips useful in scanning probe microscopes
US5302238A (en) * 1992-05-15 1994-04-12 Micron Technology, Inc. Plasma dry etch to produce atomically sharp asperities useful as cold cathodes
US5449435A (en) * 1992-11-02 1995-09-12 Motorola, Inc. Field emission device and method of making the same
GB9303985D0 (en) * 1993-02-26 1993-04-14 Bartholomew Richard S Surgical cutting tool
US5515234A (en) * 1993-06-30 1996-05-07 Texas Instruments Incorporated Antistatic protector and method
US5532177A (en) * 1993-07-07 1996-07-02 Micron Display Technology Method for forming electron emitters
DE69422234T2 (de) * 1993-07-16 2000-06-15 Matsushita Electric Ind Co Ltd Verfahren zur Herstellung einer Feldemissionsanordnung
US5417799A (en) * 1993-09-20 1995-05-23 Hughes Aircraft Company Reactive ion etching of gratings and cross gratings structures
US5907177A (en) * 1995-03-14 1999-05-25 Matsushita Electric Industrial Co.,Ltd. Semiconductor device having a tapered gate electrode
US5695658A (en) * 1996-03-07 1997-12-09 Micron Display Technology, Inc. Non-photolithographic etch mask for submicron features
US5993281A (en) * 1997-06-10 1999-11-30 The Regents Of The University Of California Sharpening of field emitter tips using high-energy ions
US6187412B1 (en) * 1997-06-27 2001-02-13 International Business Machines Corporation Silicon article having columns and method of making
US6174449B1 (en) 1998-05-14 2001-01-16 Micron Technology, Inc. Magnetically patterned etch mask
US6387717B1 (en) * 2000-04-26 2002-05-14 Micron Technology, Inc. Field emission tips and methods for fabricating the same
JP4817031B2 (ja) * 2000-05-09 2011-11-16 ソニー株式会社 情報処理装置
JP4792625B2 (ja) * 2000-08-31 2011-10-12 住友電気工業株式会社 電子放出素子の製造方法及び電子デバイス
US6607415B2 (en) 2001-06-12 2003-08-19 Hewlett-Packard Development Company, L.P. Method for fabricating tiny field emitter tips
US6648710B2 (en) * 2001-06-12 2003-11-18 Hewlett-Packard Development Company, L.P. Method for low-temperature sharpening of silicon-based field emitter tips
TW583395B (en) * 2002-03-13 2004-04-11 Scs Hightech Inc Method for producing micro probe tips
US8793866B1 (en) * 2007-12-19 2014-08-05 Western Digital (Fremont), Llc Method for providing a perpendicular magnetic recording head
US8166632B1 (en) 2008-03-28 2012-05-01 Western Digital (Fremont), Llc Method for providing a perpendicular magnetic recording (PMR) transducer
US9852870B2 (en) 2011-05-23 2017-12-26 Corporation For National Research Initiatives Method for the fabrication of electron field emission devices including carbon nanotube field electron emisson devices
DE102013211178A1 (de) 2013-06-14 2014-12-18 Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik Verfahren und Vorrichtung zur Herstellung von Nanospitzen

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3045321A (en) * 1955-04-15 1962-07-24 Buckbee Mears Co Abrading devices and method of making them
JPS5325632B2 (de) * 1973-03-22 1978-07-27
JPS5436828B2 (de) * 1974-08-16 1979-11-12
JPS51120467A (en) * 1975-04-14 1976-10-21 Nobutaka Hirose Apparatus for recovering a spillage oil
US4498952A (en) * 1982-09-17 1985-02-12 Condesin, Inc. Batch fabrication procedure for manufacture of arrays of field emitted electron beams with integral self-aligned optical lense in microguns
US4685996A (en) * 1986-10-14 1987-08-11 Busta Heinz H Method of making micromachined refractory metal field emitters
US4874463A (en) * 1988-12-23 1989-10-17 At&T Bell Laboratories Integrated circuits from wafers having improved flatness
US4916002A (en) * 1989-01-13 1990-04-10 The Board Of Trustees Of The Leland Jr. University Microcasting of microminiature tips

Also Published As

Publication number Publication date
EP0379298A2 (de) 1990-07-25
US4968382A (en) 1990-11-06
EP0379298B1 (de) 1995-08-09
DE69021402D1 (de) 1995-09-14
JPH0362482A (ja) 1991-03-18
GB2227362A (en) 1990-07-25
GB2227362B (en) 1992-11-04
GB8901087D0 (en) 1989-03-15
EP0379298A3 (de) 1991-02-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee