DE69003908D1 - Verstärker mit hohem Wirkungsgrad. - Google Patents

Verstärker mit hohem Wirkungsgrad.

Info

Publication number
DE69003908D1
DE69003908D1 DE90402236T DE69003908T DE69003908D1 DE 69003908 D1 DE69003908 D1 DE 69003908D1 DE 90402236 T DE90402236 T DE 90402236T DE 69003908 T DE69003908 T DE 69003908T DE 69003908 D1 DE69003908 D1 DE 69003908D1
Authority
DE
Germany
Prior art keywords
high efficiency
efficiency amplifier
amplifier
efficiency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE90402236T
Other languages
English (en)
Other versions
DE69003908T2 (de
Inventor
Marc Camiade
Michel Gayral
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne e2v Semiconductors SAS
Original Assignee
Thomson SCF Semiconducteurs Specifiques
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson SCF Semiconducteurs Specifiques filed Critical Thomson SCF Semiconducteurs Specifiques
Publication of DE69003908D1 publication Critical patent/DE69003908D1/de
Application granted granted Critical
Publication of DE69003908T2 publication Critical patent/DE69003908T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
    • H03F1/342—Negative-feedback-circuit arrangements with or without positive feedback in field-effect transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
DE90402236T 1989-08-18 1990-08-03 Verstärker mit hohem Wirkungsgrad. Expired - Fee Related DE69003908T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8911025A FR2651622B1 (fr) 1989-08-18 1989-08-18 Amplificateur a haut rendement.

Publications (2)

Publication Number Publication Date
DE69003908D1 true DE69003908D1 (de) 1993-11-18
DE69003908T2 DE69003908T2 (de) 1994-02-10

Family

ID=9384801

Family Applications (1)

Application Number Title Priority Date Filing Date
DE90402236T Expired - Fee Related DE69003908T2 (de) 1989-08-18 1990-08-03 Verstärker mit hohem Wirkungsgrad.

Country Status (4)

Country Link
US (1) US5103189A (de)
EP (1) EP0413625B1 (de)
DE (1) DE69003908T2 (de)
FR (1) FR2651622B1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5705959A (en) * 1996-10-08 1998-01-06 The United States Of America As Represented By The Secretary Of The Air Force High efficiency low distortion amplification
US5969575A (en) 1997-12-11 1999-10-19 Alcatel Class A/F amplifier having second and third order harmonic input and output filtering and self bias distortion correction
EP1192711B1 (de) 1999-07-09 2004-03-03 Nokia Corporation Vorspannungsschaltung für vgs-verschiebung kompensation und thermische kompensation eines leistungsbauelements
EP2164170A1 (de) * 2008-09-15 2010-03-17 Forschungsverbund Berlin E.V. Selbstregulierendes Gate-Vorspannungsnetz für Feldeffekttransistoren

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4320352A (en) * 1980-01-29 1982-03-16 Ford Aerospace & Communications Corp. Input optimized FET bias circuit
US4467288A (en) * 1982-01-05 1984-08-21 Strickland James C Distortion-free complemented error feedback amplifier and method
JPS58142609A (ja) * 1982-02-17 1983-08-24 Nippon Telegr & Teleph Corp <Ntt> Ｆｅｔ電力増幅器の低電圧駆動方法
JPS6213107A (ja) * 1985-07-11 1987-01-21 Nec Corp 電界効果トランジスタのバイアス回路

Also Published As

Publication number Publication date
US5103189A (en) 1992-04-07
FR2651622B1 (fr) 1991-10-31
EP0413625A1 (de) 1991-02-20
DE69003908T2 (de) 1994-02-10
EP0413625B1 (de) 1993-10-13
FR2651622A1 (fr) 1991-03-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee