DE69001648D1 - Detektor von elektromagnetischen wellen. - Google Patents

Detektor von elektromagnetischen wellen.

Info

Publication number
DE69001648D1
DE69001648D1 DE9090401714T DE69001648T DE69001648D1 DE 69001648 D1 DE69001648 D1 DE 69001648D1 DE 9090401714 T DE9090401714 T DE 9090401714T DE 69001648 T DE69001648 T DE 69001648T DE 69001648 D1 DE69001648 D1 DE 69001648D1
Authority
DE
Germany
Prior art keywords
electromagnetic shaft
shaft detector
detector
electromagnetic
shaft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE9090401714T
Other languages
English (en)
Other versions
DE69001648T2 (de
Inventor
Dominique Delacourt
Michel Papuchon
Jean-Claude Lehureau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of DE69001648D1 publication Critical patent/DE69001648D1/de
Publication of DE69001648T2 publication Critical patent/DE69001648T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
DE9090401714T 1989-07-04 1990-06-19 Detektor von elektromagnetischen wellen. Expired - Fee Related DE69001648T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8908961A FR2649536B1 (fr) 1989-07-04 1989-07-04 Detecteur d'ondes electromagnetiques

Publications (2)

Publication Number Publication Date
DE69001648D1 true DE69001648D1 (de) 1993-06-24
DE69001648T2 DE69001648T2 (de) 1993-09-02

Family

ID=9383441

Family Applications (1)

Application Number Title Priority Date Filing Date
DE9090401714T Expired - Fee Related DE69001648T2 (de) 1989-07-04 1990-06-19 Detektor von elektromagnetischen wellen.

Country Status (4)

Country Link
US (1) US5077466A (de)
EP (1) EP0407250B1 (de)
DE (1) DE69001648T2 (de)
FR (1) FR2649536B1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2663787B1 (fr) * 1990-06-26 1997-01-31 Thomson Csf Detecteur d'ondes electromagnetiques.
FR2693594B1 (fr) * 1992-07-07 1994-08-26 Thomson Csf Détecteur d'ondes électromagnétiques à puits quantiques.
FR2725081B1 (fr) * 1994-09-23 1996-11-15 Thomson Csf Source optique compacte, basee sur le doublage de frequence d'un laser et auto-stabilisee par depeuplement de la pompe
US5539206A (en) * 1995-04-20 1996-07-23 Loral Vought Systems Corporation Enhanced quantum well infrared photodetector
FR2749721B1 (fr) * 1996-06-07 1998-11-27 Thomson Csf Commutateur electrique a photoconducteur
US5978399A (en) * 1996-12-10 1999-11-02 Doughty; Kathryn L. Electrically-tunable infrared detectors and method based on intraband transitions in quantum well structures
DE19711505C1 (de) * 1997-03-19 1998-08-27 Fraunhofer Ges Forschung Halbleiterheterostruktur-Strahlungsdetektor für Wellenlängen aus dem infraroten Spektralbereich
US6054718A (en) * 1998-03-31 2000-04-25 Lockheed Martin Corporation Quantum well infrared photocathode having negative electron affinity surface
FR2784185B1 (fr) 1998-10-06 2001-02-02 Thomson Csf Dispositif pour l'harmonisation entre une voie d'emission laser et une voie passive d'observation
FR2814281B1 (fr) * 2000-09-19 2003-08-29 Thomson Lcd Matrice active tft pour capteur optique comportant une couche semi-conductrice photosensible, et capteur optique comportant une telle matrice
FR2825463B1 (fr) * 2001-05-30 2003-09-12 Thales Sa Gyrometre laser etat solide comportant un bloc resonateur

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4671830A (en) * 1984-01-03 1987-06-09 Xerox Corporation Method of controlling the modeling of the well energy band profile by interdiffusion
FR2586804B1 (fr) * 1985-08-30 1989-03-31 Centre Nat Rech Scient Procede et dispositif de photo-detection rapide a l'aide d'un superreseau
WO1988001792A1 (en) * 1986-09-04 1988-03-10 Varian Associates, Inc. Superlattice for a semiconductor device
FR2618221B1 (fr) * 1987-07-17 1991-07-19 Thomson Csf Detecteur d'onde electromagnetique et analyseur d'image comportant un tel detecteur.
US4903101A (en) * 1988-03-28 1990-02-20 California Institute Of Technology Tunable quantum well infrared detector

Also Published As

Publication number Publication date
FR2649536B1 (fr) 1994-07-22
DE69001648T2 (de) 1993-09-02
US5077466A (en) 1991-12-31
FR2649536A1 (fr) 1991-01-11
EP0407250B1 (de) 1993-05-19
EP0407250A1 (de) 1991-01-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee