DE68919415D1 - BICMOS-Schreib-Rückgewinnungsschaltung. - Google Patents

BICMOS-Schreib-Rückgewinnungsschaltung.

Info

Publication number
DE68919415D1
DE68919415D1 DE68919415T DE68919415T DE68919415D1 DE 68919415 D1 DE68919415 D1 DE 68919415D1 DE 68919415 T DE68919415 T DE 68919415T DE 68919415 T DE68919415 T DE 68919415T DE 68919415 D1 DE68919415 D1 DE 68919415D1
Authority
DE
Germany
Prior art keywords
bicmos
recovery circuit
write recovery
write
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68919415T
Other languages
English (en)
Other versions
DE68919415T2 (de
Inventor
Robert A Kertis
Douglas D Smith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Application granted granted Critical
Publication of DE68919415D1 publication Critical patent/DE68919415D1/de
Publication of DE68919415T2 publication Critical patent/DE68919415T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
DE68919415T 1988-02-02 1989-01-27 BICMOS-Schreib-Rückgewinnungsschaltung. Expired - Fee Related DE68919415T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/151,377 US4926383A (en) 1988-02-02 1988-02-02 BiCMOS write-recovery circuit

Publications (2)

Publication Number Publication Date
DE68919415D1 true DE68919415D1 (de) 1995-01-05
DE68919415T2 DE68919415T2 (de) 1995-06-22

Family

ID=22538494

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68919415T Expired - Fee Related DE68919415T2 (de) 1988-02-02 1989-01-27 BICMOS-Schreib-Rückgewinnungsschaltung.

Country Status (6)

Country Link
US (1) US4926383A (de)
EP (1) EP0326953B1 (de)
JP (1) JPH029087A (de)
KR (1) KR890013578A (de)
CA (1) CA1314989C (de)
DE (1) DE68919415T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5043945A (en) * 1989-09-05 1991-08-27 Motorola, Inc. Memory with improved bit line and write data line equalization
US5173877A (en) * 1990-12-10 1992-12-22 Motorola, Inc. BICMOS combined bit line load and write gate for a memory
JP3096314B2 (ja) * 1991-04-10 2000-10-10 沖電気工業株式会社 半導体記憶装置
US5652723A (en) * 1991-04-18 1997-07-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device
US5508964A (en) * 1993-01-08 1996-04-16 Texas Instruments Incorporated Write recovery time minimization for Bi-CMOS SRAM
US5369316A (en) * 1993-11-22 1994-11-29 United Microelectronics Corporation Advanced output buffer with reduced voltage swing at output terminal
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
US7643357B2 (en) * 2008-02-18 2010-01-05 International Business Machines Corporation System and method for integrating dynamic leakage reduction with write-assisted SRAM architecture
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US10544329B2 (en) 2015-04-13 2020-01-28 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4078261A (en) * 1976-01-02 1978-03-07 Motorola, Inc. Sense/write circuits for bipolar random access memory
JPS595989B2 (ja) * 1980-02-16 1984-02-08 富士通株式会社 スタティック型ランダムアクセスメモリ
US4791613A (en) * 1983-09-21 1988-12-13 Inmos Corporation Bit line and column circuitry used in a semiconductor memory
EP0199458B1 (de) * 1985-03-18 1990-09-05 Nec Corporation Speicherschaltung mit Schreibschema
JPS61239493A (ja) * 1985-04-05 1986-10-24 Fujitsu Ltd 半導体記憶装置
US4685086A (en) * 1985-11-14 1987-08-04 Thomson Components-Mostek Corp. Memory cell leakage detection circuit
US4744059A (en) * 1985-12-18 1988-05-10 Fairchild Camera And Instrument Corporation Apparatus and method for reducing write recovery time in a random access memory
US4751680A (en) * 1986-03-03 1988-06-14 Motorola, Inc. Bit line equalization in a memory

Also Published As

Publication number Publication date
US4926383A (en) 1990-05-15
DE68919415T2 (de) 1995-06-22
EP0326953A3 (de) 1992-04-01
EP0326953A2 (de) 1989-08-09
CA1314989C (en) 1993-03-23
EP0326953B1 (de) 1994-11-23
KR890013578A (ko) 1989-09-25
JPH029087A (ja) 1990-01-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee