DE68910237T2 - Verfahren zum mit Hilfe Eines Lasers selektiven Anbringen eines in der Flüssigkeitsphase befindlichen Metalles auf einem Substrat. - Google Patents
Verfahren zum mit Hilfe Eines Lasers selektiven Anbringen eines in der Flüssigkeitsphase befindlichen Metalles auf einem Substrat.Info
- Publication number
- DE68910237T2 DE68910237T2 DE89202094T DE68910237T DE68910237T2 DE 68910237 T2 DE68910237 T2 DE 68910237T2 DE 89202094 T DE89202094 T DE 89202094T DE 68910237 T DE68910237 T DE 68910237T DE 68910237 T2 DE68910237 T2 DE 68910237T2
- Authority
- DE
- Germany
- Prior art keywords
- laser
- substrate
- metal
- liquid phase
- selectively applying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000007791 liquid phase Substances 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
- C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
- H01L21/76894—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern using a laser, e.g. laser cutting, laser direct writing, laser repair
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
- H05K3/185—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/225—Correcting or repairing of printed circuits
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Toxicology (AREA)
- Organic Chemistry (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8802047A NL8802047A (nl) | 1988-08-18 | 1988-08-18 | Werkwijze voor het selectief op een substraat aanbrengen van een metaal uit de vloeistoffase met behulp van een laser. |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68910237D1 DE68910237D1 (de) | 1993-12-02 |
DE68910237T2 true DE68910237T2 (de) | 1994-05-05 |
Family
ID=19852774
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE89202094T Expired - Fee Related DE68910237T2 (de) | 1988-08-18 | 1989-08-16 | Verfahren zum mit Hilfe Eines Lasers selektiven Anbringen eines in der Flüssigkeitsphase befindlichen Metalles auf einem Substrat. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5059449A (de) |
EP (1) | EP0357124B1 (de) |
JP (1) | JPH02101171A (de) |
DE (1) | DE68910237T2 (de) |
NL (1) | NL8802047A (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012023349B4 (de) | 2012-11-29 | 2022-10-13 | Hochschule München | Verfahren und Vorrichtung zur strukturierten Beschichtung der Innenseite eines Schlauchs oder Rohrs |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4994352A (en) * | 1988-11-25 | 1991-02-19 | The Dow Chemical Company | Dye-enhanced deposition of elemental metals and metalloids on substrates |
US5167983A (en) * | 1988-12-28 | 1992-12-01 | General Electric Company | Method of forming a conductor pattern on the inside of a hollow tube by reacting a gas or fluid therein with actinic radiation |
US5171608A (en) * | 1990-09-28 | 1992-12-15 | The Unites States Of America As Represented By The Secretary Of The Navy | Method of pattern transfer in photolithography using laser induced metallization |
DE4125863A1 (de) * | 1991-08-03 | 1993-02-04 | Lpkf Cad Cam Systeme Gmbh | Verfahren zum aufbringen von strukturierten metallschichten auf glassubstraten |
US5209388A (en) * | 1991-09-26 | 1993-05-11 | Allied-Signal Inc. | Process for bonding carbonaceous bodies |
US5260108A (en) * | 1992-03-10 | 1993-11-09 | International Business Machines Corporation | Selective seeding of Pd by excimer laser radiation through the liquid |
US5378508A (en) * | 1992-04-01 | 1995-01-03 | Akzo Nobel N.V. | Laser direct writing |
TW392288B (en) | 1997-06-06 | 2000-06-01 | Dow Corning | Thermally stable dielectric coatings |
US6025038A (en) * | 1998-08-26 | 2000-02-15 | Board Of Regents Of The University Of Nebraska | Method for depositing rare-earth boride onto a substrate |
US6077617A (en) * | 1998-08-26 | 2000-06-20 | Board Of Regents Of The University Of Nebraska | Rare-earth boride thin film system |
US6419998B1 (en) | 2000-06-19 | 2002-07-16 | Mcgrath Thomas | Method for deposition of metal catalysts on inert supports |
US7135405B2 (en) | 2004-08-04 | 2006-11-14 | Hewlett-Packard Development Company, L.P. | Method to form an interconnect |
WO2007085452A1 (de) * | 2006-01-25 | 2007-08-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und vorrichtung zur präzisionsbearbeitung von substraten mittels eines in einen flüssigkeitsstrahl eingekoppelten laser und dessen verwendung |
GB0700021D0 (en) * | 2007-01-02 | 2007-02-07 | Univ Surrey | Methods of adhering particles to a material by heating |
DE102007010872A1 (de) | 2007-03-06 | 2008-09-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Präzisionsbearbeitung von Substraten und dessen Verwendung |
DE102007018845B4 (de) | 2007-04-20 | 2009-11-12 | Carl Von Ossietzky Universität Oldenburg | Verfahren zur Abscheidung einer metallhaltigen Substanz auf einem Substrat und Beschichtungsmaterial dafür |
JP5216633B2 (ja) | 2008-03-19 | 2013-06-19 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | バックグラウンドめっきを抑制する方法 |
EP2157209B1 (de) * | 2008-07-31 | 2014-10-22 | Rohm and Haas Electronic Materials LLC | Hemmung der Hintergrundplattierung |
US20110123728A1 (en) * | 2009-11-25 | 2011-05-26 | Ricoh Company, Ltd. | Thin film manufacturing method and thin film element |
WO2015189875A1 (ja) * | 2014-06-12 | 2015-12-17 | 富士電機株式会社 | 不純物添加装置、不純物添加方法及び半導体素子の製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4126468A (en) * | 1975-06-28 | 1978-11-21 | Vickers Limited | Radiation sensitive compositions of quaternary ammonium salt and carboxylic acid sensitizer |
US4239789A (en) * | 1979-05-08 | 1980-12-16 | International Business Machines Corporation | Maskless method for electroless plating patterns |
US4444801A (en) * | 1981-01-14 | 1984-04-24 | Hitachi, Ltd. | Method and apparatus for correcting transparent defects on a photomask |
US4349583A (en) * | 1981-07-28 | 1982-09-14 | International Business Machines Corporation | Laser enhanced maskless method for plating and simultaneous plating and etching of patterns |
JPS58203443A (ja) * | 1982-05-24 | 1983-11-26 | Hitachi Ltd | ホトマスクの白点欠陥修正用組成物 |
US4511597A (en) * | 1983-10-12 | 1985-04-16 | Kollmorgen Technologies Corporation | Method for depositing a metal on a surface |
US4526807A (en) * | 1984-04-27 | 1985-07-02 | General Electric Company | Method for deposition of elemental metals and metalloids on substrates |
US4659587A (en) * | 1984-10-11 | 1987-04-21 | Hitachi, Ltd. | Electroless plating process and process for producing multilayer wiring board |
-
1988
- 1988-08-18 NL NL8802047A patent/NL8802047A/nl not_active Application Discontinuation
-
1989
- 1989-08-15 US US07/395,536 patent/US5059449A/en not_active Expired - Fee Related
- 1989-08-16 JP JP1210206A patent/JPH02101171A/ja active Pending
- 1989-08-16 DE DE89202094T patent/DE68910237T2/de not_active Expired - Fee Related
- 1989-08-16 EP EP89202094A patent/EP0357124B1/de not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012023349B4 (de) | 2012-11-29 | 2022-10-13 | Hochschule München | Verfahren und Vorrichtung zur strukturierten Beschichtung der Innenseite eines Schlauchs oder Rohrs |
Also Published As
Publication number | Publication date |
---|---|
NL8802047A (nl) | 1990-03-16 |
EP0357124A2 (de) | 1990-03-07 |
EP0357124B1 (de) | 1993-10-27 |
JPH02101171A (ja) | 1990-04-12 |
DE68910237D1 (de) | 1993-12-02 |
US5059449A (en) | 1991-10-22 |
EP0357124A3 (en) | 1990-03-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL |
|
8339 | Ceased/non-payment of the annual fee |