DE68904343T2 - BIPOLAR TRANSISTOR WITH INSULATED CONTROL ELECTRODE. - Google Patents
BIPOLAR TRANSISTOR WITH INSULATED CONTROL ELECTRODE.Info
- Publication number
- DE68904343T2 DE68904343T2 DE1989604343 DE68904343T DE68904343T2 DE 68904343 T2 DE68904343 T2 DE 68904343T2 DE 1989604343 DE1989604343 DE 1989604343 DE 68904343 T DE68904343 T DE 68904343T DE 68904343 T2 DE68904343 T2 DE 68904343T2
- Authority
- DE
- Germany
- Prior art keywords
- bipolar transistor
- control electrode
- insulated control
- insulated
- bipolar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63078028A JPH07120799B2 (en) | 1988-04-01 | 1988-04-01 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE68904343D1 DE68904343D1 (en) | 1993-02-25 |
| DE68904343T2 true DE68904343T2 (en) | 1993-06-09 |
Family
ID=13650358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1989604343 Expired - Fee Related DE68904343T2 (en) | 1988-04-01 | 1989-04-03 | BIPOLAR TRANSISTOR WITH INSULATED CONTROL ELECTRODE. |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0338312B1 (en) |
| JP (1) | JPH07120799B2 (en) |
| DE (1) | DE68904343T2 (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0716009B2 (en) * | 1988-12-02 | 1995-02-22 | 株式会社日立製作所 | Lateral insulated gate bipolar transistor |
| GB8901342D0 (en) * | 1989-01-21 | 1989-03-15 | Lucas Ind Plc | Semiconductor device |
| DE4006886A1 (en) * | 1989-03-06 | 1990-09-13 | Fuji Electric Co Ltd | Semiconductor IC - uses MIS-field effect transistor configuration arranged to prevent current capacity sacrifice |
| WO1991003842A1 (en) * | 1989-08-31 | 1991-03-21 | Nippondenso Co., Ltd. | Insulated gate bipolar transistor |
| JP2720574B2 (en) * | 1990-05-11 | 1998-03-04 | 富士電機株式会社 | Dual-gate insulated gate bipolar transistor |
| JP3085037B2 (en) * | 1993-08-18 | 2000-09-04 | 富士電機株式会社 | Insulated gate bipolar transistor |
| JP3255547B2 (en) * | 1994-03-09 | 2002-02-12 | 株式会社東芝 | Thyristor with insulated gate |
| DE19539021A1 (en) * | 1995-10-19 | 1997-04-24 | Siemens Ag | Field-controlled bipolar transistor |
| US6831331B2 (en) | 1995-11-15 | 2004-12-14 | Denso Corporation | Power MOS transistor for absorbing surge current |
| US6242787B1 (en) | 1995-11-15 | 2001-06-05 | Denso Corporation | Semiconductor device and manufacturing method thereof |
| DE19828669C2 (en) * | 1998-06-26 | 2003-08-21 | Infineon Technologies Ag | Lateral IGBT in SOI construction and manufacturing process |
| DE19906384A1 (en) * | 1999-02-16 | 2000-08-24 | Siemens Ag | Insulated gate bipolar transistor with electric pn-junction insulation of adjacent components |
| DE102004028474B4 (en) * | 2004-06-11 | 2009-04-09 | X-Fab Semiconductor Foundries Ag | Integrated component in a SOI disk |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE8107136L (en) * | 1980-12-02 | 1982-06-03 | Gen Electric | STEERING ELECTRICAL EQUIPMENT |
| GB2125622B (en) * | 1982-02-09 | 1985-10-02 | Western Electric Co | Field-effect controlled bi-directional lateral thyristor |
| DE3379302D1 (en) * | 1982-12-13 | 1989-04-06 | Gen Electric | Lateral insulated-gate rectifier structures |
| CA1200322A (en) * | 1982-12-13 | 1986-02-04 | General Electric Company | Bidirectional insulated-gate rectifier structures and method of operation |
| EP0144654A3 (en) * | 1983-11-03 | 1987-10-07 | General Electric Company | Semiconductor device structure including a dielectrically-isolated insulated-gate transistor |
| JPS60260152A (en) * | 1984-06-07 | 1985-12-23 | Nec Corp | Mos gate bipolar transistor |
| JPS6124278A (en) * | 1984-07-13 | 1986-02-01 | Toshiba Corp | Insulated gate type semiconductor device |
| JPH0779164B2 (en) * | 1986-01-30 | 1995-08-23 | 三菱電機株式会社 | Semiconductor device |
-
1988
- 1988-04-01 JP JP63078028A patent/JPH07120799B2/en not_active Expired - Lifetime
-
1989
- 1989-04-03 DE DE1989604343 patent/DE68904343T2/en not_active Expired - Fee Related
- 1989-04-03 EP EP19890105833 patent/EP0338312B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0338312A3 (en) | 1990-03-21 |
| JPH07120799B2 (en) | 1995-12-20 |
| DE68904343D1 (en) | 1993-02-25 |
| JPH01253278A (en) | 1989-10-09 |
| EP0338312B1 (en) | 1993-01-13 |
| EP0338312A2 (en) | 1989-10-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |