DE60303509D1 - Verfahren und vorrichtung zum zweidimensionalen aufbau von partikeln - Google Patents

Verfahren und vorrichtung zum zweidimensionalen aufbau von partikeln

Info

Publication number
DE60303509D1
DE60303509D1 DE60303509T DE60303509T DE60303509D1 DE 60303509 D1 DE60303509 D1 DE 60303509D1 DE 60303509 T DE60303509 T DE 60303509T DE 60303509 T DE60303509 T DE 60303509T DE 60303509 D1 DE60303509 D1 DE 60303509D1
Authority
DE
Germany
Prior art keywords
particles
dimensional construction
ramp
piled
dam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60303509T
Other languages
English (en)
Other versions
DE60303509T8 (de
DE60303509T2 (de
Inventor
Gilles Picard
Juan Schneider
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Versatilis LLC
Original Assignee
Nanometrix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanometrix Inc filed Critical Nanometrix Inc
Application granted granted Critical
Publication of DE60303509D1 publication Critical patent/DE60303509D1/de
Publication of DE60303509T2 publication Critical patent/DE60303509T2/de
Publication of DE60303509T8 publication Critical patent/DE60303509T8/de
Active legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/842—Coating a support with a liquid magnetic dispersion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C19/00—Apparatus specially adapted for applying particulate materials to surfaces
    • B05C19/04—Apparatus specially adapted for applying particulate materials to surfaces the particulate material being projected, poured or allowed to flow onto the surface of the work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D69/00—Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor
    • B01D69/12—Composite membranes; Ultra-thin membranes
    • B01D69/122—Separate manufacturing of ultra-thin membranes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
    • B05D1/20—Processes for applying liquids or other fluent materials performed by dipping substances to be applied floating on a fluid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
    • B05D1/20—Processes for applying liquids or other fluent materials performed by dipping substances to be applied floating on a fluid
    • B05D1/202—Langmuir Blodgett films (LB films)
    • B05D1/204—LB techniques
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
    • B05D1/20—Processes for applying liquids or other fluent materials performed by dipping substances to be applied floating on a fluid
    • B05D1/202—Langmuir Blodgett films (LB films)
    • B05D1/206—LB troughs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2252/00—Sheets
    • B05D2252/02—Sheets of indefinite length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49883—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing organic materials or pastes, e.g. for thick films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE60303509T 2002-05-10 2003-05-12 Verfahren und vorrichtung zum zweidimensionalen aufbau von partikeln Active DE60303509T8 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CA002385911A CA2385911A1 (en) 2002-05-10 2002-05-10 Method and apparatus for two dimensional assembly of particles
CA2385911 2002-05-10
PCT/CA2003/000697 WO2003095108A1 (en) 2002-05-10 2003-05-12 Method and apparatus for two dimensional assembly of particles

Publications (3)

Publication Number Publication Date
DE60303509D1 true DE60303509D1 (de) 2006-04-20
DE60303509T2 DE60303509T2 (de) 2006-10-26
DE60303509T8 DE60303509T8 (de) 2007-02-01

Family

ID=29410107

Family Applications (2)

Application Number Title Priority Date Filing Date
DE60334251T Expired - Lifetime DE60334251D1 (de) 2002-05-10 2003-05-12 Vorrichtung zum zweidimensionalen Aufbau von Partikeln
DE60303509T Active DE60303509T8 (de) 2002-05-10 2003-05-12 Verfahren und vorrichtung zum zweidimensionalen aufbau von partikeln

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE60334251T Expired - Lifetime DE60334251D1 (de) 2002-05-10 2003-05-12 Vorrichtung zum zweidimensionalen Aufbau von Partikeln

Country Status (10)

Country Link
EP (2) EP1647334B1 (de)
JP (1) JP2005525230A (de)
KR (1) KR100997548B1 (de)
CN (1) CN1652881A (de)
AT (2) ATE481183T1 (de)
AU (1) AU2003229443A1 (de)
CA (2) CA2385911A1 (de)
DE (2) DE60334251D1 (de)
MX (1) MXPA04011172A (de)
WO (1) WO2003095108A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2971956B1 (fr) * 2011-02-24 2013-03-29 Commissariat Energie Atomique Installation et procede pour le depot d'un film de particules ordonnees sur un substrat en defilement
FR2977810A1 (fr) * 2011-07-13 2013-01-18 Commissariat Energie Atomique Installation et procede pour le depot d'un film de particules ordonnees, de largeur reglable, sur un substrat en defilement
FR2986722B1 (fr) 2012-02-10 2014-03-28 Commissariat Energie Atomique Procede de transfert d'objets sur un substrat a l'aide d'un film compact de particules, avec une etape de realisation de connecteurs sur les objets
FR2986721B1 (fr) * 2012-02-10 2014-06-27 Commissariat Energie Atomique Procede de depot d'un film de particules sur un substrat via un convoyeur liquide, comprenant une etape de structuration du film sur le substrat
FR2986720B1 (fr) * 2012-02-10 2014-03-28 Commissariat Energie Atomique Procede de depot de particules sur un substrat, comprenant une etape de structuration d'un film de particules sur un convoyeur liquide
FR2995228B1 (fr) * 2012-09-10 2014-09-05 Commissariat Energie Atomique Procede de formation d'un film de particules sur liquide porteur, avec deplacement d'une rampe inclinee de compression des particules
JP6892392B2 (ja) * 2015-01-12 2021-06-23 ワイドリッヒ，ヘルムート 電荷キャリアをガイドする装置及びその使用方法
CN109070457B (zh) * 2016-03-14 2022-02-01 耐诺格兰德 用于形成用于增材制造的颗粒层的方法和装置
CN106226943B (zh) * 2016-10-11 2021-08-31 京东方科技集团股份有限公司 用于制造量子点显示器件的方法以及对应的量子点显示器件
CN106583107A (zh) * 2016-12-15 2017-04-26 苏州欣航微电子有限公司 一种铜箔胶带磁吸处理装置
CN113874988A (zh) * 2019-05-22 2021-12-31 丰田汽车欧洲股份有限公司 用于在液-液界面处通过分散颗粒自组装制备半导体薄膜的基于溶液的沉积方法
CN110538772A (zh) * 2019-10-21 2019-12-06 健民药业集团股份有限公司 一种模压滚切式水凝胶涂布机
DE102020122857B4 (de) 2020-09-01 2022-12-08 Leibniz-Institut für Photonische Technologien e.V. (Engl.Leibniz Institute of Photonic Technology) Verfahren zur Herstellung einer ultradünnen freistehenden 2D-Membran mit Poren sowie ihre anwendungsbezogene Modifikation und Verwendung der über dieses Verfahren hergestellten 2D-Membranen
TWI755286B (zh) * 2021-02-23 2022-02-11 歆熾電氣技術股份有限公司 塗佈方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04367720A (ja) * 1991-06-12 1992-12-21 Canon Inc 単分子膜又は単分子累積膜の形成方法及び形成装置
JP3262472B2 (ja) * 1994-04-22 2002-03-04 キヤノン株式会社 ラングミュアーブロジェット膜の製造装置
DE69809122T2 (de) * 1997-05-30 2003-04-03 Canon Kk Vorrichtung zur Herstellung Lagmuir-Blodgett-Filmen
WO2001089716A2 (en) * 2000-05-24 2001-11-29 Nano World Projects Corporation Process for the preparation of monolayers of particles or molecules

Also Published As

Publication number Publication date
KR20050020798A (ko) 2005-03-04
WO2003095108A1 (en) 2003-11-20
DE60303509T8 (de) 2007-02-01
EP1647334B1 (de) 2010-09-15
CA2385911A1 (en) 2003-11-10
DE60303509T2 (de) 2006-10-26
KR100997548B1 (ko) 2010-11-30
ATE317304T1 (de) 2006-02-15
MXPA04011172A (es) 2005-08-15
CN1652881A (zh) 2005-08-10
DE60334251D1 (de) 2010-10-28
EP1503870A1 (de) 2005-02-09
AU2003229443A1 (en) 2003-11-11
EP1647334A1 (de) 2006-04-19
CA2484653C (en) 2013-07-09
JP2005525230A (ja) 2005-08-25
ATE481183T1 (de) 2010-10-15
EP1503870B1 (de) 2006-02-08
CA2484653A1 (en) 2003-11-20

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Legal Events

Date Code Title Description
8381 Inventor (new situation)

Inventor name: SCHNEIDER, JUAN, LAVAL, QUEBEC H7W 2S9, CA

Inventor name: PICARD, GILLES, TROIS-RIVIERES, QUEBEC G8Y 5R5, CA

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: VERSATILIS LLC, SHELBURNE, VT., US

R082 Change of representative

Ref document number: 1503870

Country of ref document: EP

Representative=s name: PATENTANWAELTE BRESSEL UND PARTNER, DE