DE60218225D1 - Integrierte schaltung und batteriebetriebenes elektronisches gerät - Google Patents

Integrierte schaltung und batteriebetriebenes elektronisches gerät

Info

Publication number
DE60218225D1
DE60218225D1 DE60218225T DE60218225T DE60218225D1 DE 60218225 D1 DE60218225 D1 DE 60218225D1 DE 60218225 T DE60218225 T DE 60218225T DE 60218225 T DE60218225 T DE 60218225T DE 60218225 D1 DE60218225 D1 DE 60218225D1
Authority
DE
Germany
Prior art keywords
transistor
integrated circuit
coupled
enable
battery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60218225T
Other languages
English (en)
Other versions
DE60218225T2 (de
Inventor
J Veendrick
I Meijer
B Rao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE60218225D1 publication Critical patent/DE60218225D1/de
Publication of DE60218225T2 publication Critical patent/DE60218225T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
  • Credit Cards Or The Like (AREA)
DE2002618225 2002-01-23 2002-12-18 Integrierte schaltung und batteriebetriebenes elektronisches gerät Expired - Lifetime DE60218225T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP02075274 2002-01-23
EP02075274 2002-01-23
PCT/IB2002/005602 WO2003063356A1 (en) 2002-01-23 2002-12-18 Intergrated circuit and battery powered electronic device

Publications (2)

Publication Number Publication Date
DE60218225D1 true DE60218225D1 (de) 2007-03-29
DE60218225T2 DE60218225T2 (de) 2007-10-31

Family

ID=27589121

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2002618225 Expired - Lifetime DE60218225T2 (de) 2002-01-23 2002-12-18 Integrierte schaltung und batteriebetriebenes elektronisches gerät

Country Status (9)

Country Link
US (1) US7102254B2 (de)
EP (1) EP1472789B1 (de)
JP (1) JP2005516454A (de)
KR (1) KR100938039B1 (de)
CN (1) CN1286269C (de)
AT (1) ATE354209T1 (de)
DE (1) DE60218225T2 (de)
TW (1) TWI280469B (de)
WO (1) WO2003063356A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7659746B2 (en) * 2005-02-14 2010-02-09 Qualcomm, Incorporated Distributed supply current switch circuits for enabling individual power domains
US8552734B2 (en) * 2005-04-19 2013-10-08 Nxp B.V. Test prepared integrated circuit with an internal power supply domain
JP5575405B2 (ja) * 2009-01-22 2014-08-20 ピーエスフォー ルクスコ エスエイアールエル 半導体装置
US8030800B1 (en) * 2009-04-08 2011-10-04 William J Terrell Integrated power sources for mobile electronic devices
US8723592B2 (en) * 2011-08-12 2014-05-13 Nxp B.V. Adjustable body bias circuit
EP2974022B1 (de) * 2013-03-15 2020-09-30 The Regents of The University of California Feinstromsteuerung bei fpga-verbindungen
US9429610B2 (en) 2014-01-16 2016-08-30 Qualcomm Incorporated Voltage dependent die RC modeling for system level power distribution networks
KR20150112148A (ko) * 2014-03-27 2015-10-07 삼성전자주식회사 파워 게이팅 회로 및 집적 회로

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4722372A (en) * 1985-08-02 1988-02-02 Louis Hoffman Associates Inc. Electrically operated dispensing apparatus and disposable container useable therewith
KR950002726B1 (ko) 1992-03-30 1995-03-24 삼성전자주식회사 기판전압 발생기의 전하 펌프 회로
US5461338A (en) 1992-04-17 1995-10-24 Nec Corporation Semiconductor integrated circuit incorporated with substrate bias control circuit
DE4221575C2 (de) 1992-07-01 1995-02-09 Ibm Integrierter CMOS-Halbleiterschaltkreis und Datenverarbeitungssystem mit integriertem CMOS-Halbleiterschaltkreis
US5347172A (en) 1992-10-22 1994-09-13 United Memories, Inc. Oscillatorless substrate bias generator
JP3110262B2 (ja) 1993-11-15 2000-11-20 松下電器産業株式会社 半導体装置及び半導体装置のオペレーティング方法
DE69502350T2 (de) * 1994-06-28 1998-10-29 Nippon Telegraph & Telephone SOI (Silizium auf Isolator)-Logikschaltung mit niedriger Spannung
JP2931776B2 (ja) * 1995-08-21 1999-08-09 三菱電機株式会社 半導体集積回路
US5612645A (en) 1995-12-01 1997-03-18 Sun Microsystems, Inc. Dynamic MOSFET threshold voltage controller
JP3533306B2 (ja) 1996-04-02 2004-05-31 株式会社東芝 半導体集積回路装置
US6329874B1 (en) * 1998-09-11 2001-12-11 Intel Corporation Method and apparatus for reducing standby leakage current using a leakage control transistor that receives boosted gate drive during an active mode
US6166985A (en) * 1999-04-30 2000-12-26 Intel Corporation Integrated circuit low leakage power circuitry for use with an advanced CMOS process
US6275094B1 (en) 1999-06-22 2001-08-14 International Business Machines Corporation CMOS device and circuit and method of operation dynamically controlling threshold voltage
US6225852B1 (en) * 1999-10-01 2001-05-01 Advanced Micro Devices, Inc. Use of biased high threshold voltage transistor to eliminate standby current in low voltage integrated circuits
US6977519B2 (en) * 2003-05-14 2005-12-20 International Business Machines Corporation Digital logic with reduced leakage
US7235997B2 (en) * 2004-07-14 2007-06-26 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS leakage current meter

Also Published As

Publication number Publication date
US7102254B2 (en) 2006-09-05
EP1472789B1 (de) 2007-02-14
CN1286269C (zh) 2006-11-22
EP1472789A1 (de) 2004-11-03
KR100938039B1 (ko) 2010-01-21
ATE354209T1 (de) 2007-03-15
KR20040075948A (ko) 2004-08-30
WO2003063356A1 (en) 2003-07-31
CN1615587A (zh) 2005-05-11
DE60218225T2 (de) 2007-10-31
JP2005516454A (ja) 2005-06-02
TW200304590A (en) 2003-10-01
TWI280469B (en) 2007-05-01
US20050174161A1 (en) 2005-08-11

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Legal Events

Date Code Title Description
8381 Inventor (new situation)

Inventor name: VEENDRICK, HENDRICUS, J., M., NL-5656 AA EINDH, NL

Inventor name: MEIJER, RINZE,I.,M.,P., NL-5656 AA EINDHOVEN, NL

Inventor name: RAO, KIRAN, B.,R., NL-5656 AA EINDHOVEN, NL

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL

8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN