DE602008005223D1 - Mask data generation method, mask manufacturing method, exposure method, device manufacturing method, and program - Google Patents

Mask data generation method, mask manufacturing method, exposure method, device manufacturing method, and program

Info

Publication number
DE602008005223D1
DE602008005223D1 DE602008005223T DE602008005223T DE602008005223D1 DE 602008005223 D1 DE602008005223 D1 DE 602008005223D1 DE 602008005223 T DE602008005223 T DE 602008005223T DE 602008005223 T DE602008005223 T DE 602008005223T DE 602008005223 D1 DE602008005223 D1 DE 602008005223D1
Authority
DE
Germany
Prior art keywords
mask
manufacturing
program
data generation
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602008005223T
Other languages
German (de)
Inventor
Miyoko Kawashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE602008005223D1 publication Critical patent/DE602008005223D1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
DE602008005223T 2007-09-19 2008-09-02 Mask data generation method, mask manufacturing method, exposure method, device manufacturing method, and program Active DE602008005223D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007242911 2007-09-19
JP2008041489A JP2009093138A (en) 2007-09-19 2008-02-22 Mask data generation method, mask fabrication method, exposure method, device fabrication method and program for generation of mask data

Publications (1)

Publication Number Publication Date
DE602008005223D1 true DE602008005223D1 (en) 2011-04-14

Family

ID=40665153

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602008005223T Active DE602008005223D1 (en) 2007-09-19 2008-09-02 Mask data generation method, mask manufacturing method, exposure method, device manufacturing method, and program

Country Status (4)

Country Link
JP (2) JP2009093138A (en)
KR (1) KR101001219B1 (en)
DE (1) DE602008005223D1 (en)
TW (1) TWI371701B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5665398B2 (en) * 2009-08-10 2015-02-04 キヤノン株式会社 Generation method, creation method, exposure method, device manufacturing method, and program
JP5279745B2 (en) * 2010-02-24 2013-09-04 株式会社東芝 Mask layout creation method, mask layout creation device, lithography mask manufacturing method, semiconductor device manufacturing method, and computer-executable program
JP5603685B2 (en) * 2010-07-08 2014-10-08 キヤノン株式会社 Generation method, creation method, exposure method, device manufacturing method, and program
JP5627394B2 (en) 2010-10-29 2014-11-19 キヤノン株式会社 Program for determining mask data and exposure conditions, determination method, mask manufacturing method, exposure method, and device manufacturing method
JP6039910B2 (en) 2012-03-15 2016-12-07 キヤノン株式会社 Generation method, program, and information processing apparatus
JP5677356B2 (en) 2012-04-04 2015-02-25 キヤノン株式会社 Generation method of mask pattern
JP5656905B2 (en) 2012-04-06 2015-01-21 キヤノン株式会社 Determination method, program, and information processing apparatus
KR101694275B1 (en) * 2013-03-14 2017-01-23 에이에스엠엘 네델란즈 비.브이. Patterning device, method of producing a marker on a substrate and device manufacturing method
JP6192372B2 (en) * 2013-06-11 2017-09-06 キヤノン株式会社 Mask pattern creation method, program, and information processing apparatus
JP6307367B2 (en) 2014-06-26 2018-04-04 株式会社ニューフレアテクノロジー Mask inspection apparatus, mask evaluation method and mask evaluation system

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3576791B2 (en) * 1998-03-16 2004-10-13 株式会社東芝 Mask pattern design method
SG137657A1 (en) * 2002-11-12 2007-12-28 Asml Masktools Bv Method and apparatus for performing model-based layout conversion for use with dipole illumination
CN100468196C (en) * 2003-01-14 2009-03-11 Asml蒙片工具有限公司 Method and apparatus for providing optical proximity correction features to a reticle pattern for optical lithography
KR100719154B1 (en) * 2003-01-14 2007-05-17 에이에스엠엘 마스크툴즈 비.브이. Method of optical proximity correction design for contact hole mask
KR101115477B1 (en) * 2003-06-30 2012-03-06 에이에스엠엘 마스크툴즈 비.브이. A method, program product and apparatus for generating assist features utilizing an image field map
US7550235B2 (en) * 2003-09-05 2009-06-23 Asml Masktools B.V. Method and apparatus for performing model based placement of phase-balanced scattering bars for sub-wavelength optical lithography
SG125970A1 (en) * 2003-12-19 2006-10-30 Asml Masktools Bv Feature optimization using interference mapping lithography
US7620930B2 (en) * 2004-08-24 2009-11-17 Asml Masktools B.V. Method, program product and apparatus for model based scattering bar placement for enhanced depth of focus in quarter-wavelength lithography
US7349066B2 (en) * 2005-05-05 2008-03-25 Asml Masktools B.V. Apparatus, method and computer program product for performing a model based optical proximity correction factoring neighbor influence
JP5235322B2 (en) * 2006-07-12 2013-07-10 キヤノン株式会社 Original data creation method and original data creation program

Also Published As

Publication number Publication date
JP2009093138A (en) 2009-04-30
KR101001219B1 (en) 2010-12-15
TWI371701B (en) 2012-09-01
TW200931290A (en) 2009-07-16
JP5188644B2 (en) 2013-04-24
KR20090030216A (en) 2009-03-24
JP2013011898A (en) 2013-01-17

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