DE602008005202D1 - Lösung, die bei der Herstellung eines porösen Halbleitermaterials verwendet wird, und Herstellungsverfahren dieses Materials - Google Patents

Lösung, die bei der Herstellung eines porösen Halbleitermaterials verwendet wird, und Herstellungsverfahren dieses Materials

Info

Publication number
DE602008005202D1
DE602008005202D1 DE602008005202T DE602008005202T DE602008005202D1 DE 602008005202 D1 DE602008005202 D1 DE 602008005202D1 DE 602008005202 T DE602008005202 T DE 602008005202T DE 602008005202 T DE602008005202 T DE 602008005202T DE 602008005202 D1 DE602008005202 D1 DE 602008005202D1
Authority
DE
Germany
Prior art keywords
manufacturing
production
solution used
porous semiconductor
semiconductor material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602008005202T
Other languages
English (en)
Inventor
Bruno Delahaye
Jean-Luc Baltzinger
Malamine Sanogo
Gaelle Richou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Altis Semiconductor SNC
Original Assignee
Altis Semiconductor SNC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Altis Semiconductor SNC filed Critical Altis Semiconductor SNC
Publication of DE602008005202D1 publication Critical patent/DE602008005202D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
    • H01L31/0284—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System comprising porous silicon as part of the active layer(s)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
DE602008005202T 2007-04-13 2008-04-08 Lösung, die bei der Herstellung eines porösen Halbleitermaterials verwendet wird, und Herstellungsverfahren dieses Materials Active DE602008005202D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0754443A FR2914925B1 (fr) 2007-04-13 2007-04-13 Solution utilisee dans la fabrication d'un materiau semi-conducteur poreux et procede de fabrication dudit materiau

Publications (1)

Publication Number Publication Date
DE602008005202D1 true DE602008005202D1 (de) 2011-04-14

Family

ID=38734939

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602008005202T Active DE602008005202D1 (de) 2007-04-13 2008-04-08 Lösung, die bei der Herstellung eines porösen Halbleitermaterials verwendet wird, und Herstellungsverfahren dieses Materials

Country Status (4)

Country Link
US (1) US8668840B2 (de)
EP (1) EP1980607B1 (de)
DE (1) DE602008005202D1 (de)
FR (1) FR2914925B1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8164190B2 (en) 2009-06-25 2012-04-24 International Business Machines Corporation Structure of power grid for semiconductor devices and method of making the same
US20120091100A1 (en) 2010-10-14 2012-04-19 S.O.I.Tec Silicon On Insulator Technologies Etchant for controlled etching of ge and ge-rich silicon germanium alloys
GB201117279D0 (en) 2011-10-06 2011-11-16 Nexeon Ltd Etched silicon structures, method of forming etched silicon structures and uses thereof
CN105103346B (zh) * 2013-12-03 2018-11-06 株式会社Lg 化学 多孔性硅类负极活性物质及其制备方法、以及包含它的锂二次电池
CN111799460B (zh) * 2020-07-20 2022-09-09 昆明理工大学 一种基于切割硅废料制备硼掺杂纳米金属/多孔硅碳复合负极的方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2614913A (en) * 1950-10-20 1952-10-21 Gen Motors Corp Brightening bath
US3436259A (en) * 1966-05-12 1969-04-01 Ibm Method for plating and polishing a silicon planar surface
CA1098253A (en) 1976-04-05 1981-03-31 Timm L. Kelly Zirconium/titanium coating solution for aluminum surfaces
US4230523A (en) * 1978-12-29 1980-10-28 International Business Machines Corporation Etchant for silicon dioxide films disposed atop silicon or metallic silicides
US7335603B2 (en) * 2000-02-07 2008-02-26 Vladimir Mancevski System and method for fabricating logic devices comprising carbon nanotube transistors
JP2002252202A (ja) 2001-02-27 2002-09-06 Takashi Matsuura 半導体基材表面への微細構造形成方法およびその方法により微細構造を形成した半導体基材ならびにそれを用いたデバイス
TWI220060B (en) * 2001-05-10 2004-08-01 Macronix Int Co Ltd Cleaning method of semiconductor wafer
US20050218372A1 (en) * 2004-04-01 2005-10-06 Brask Justin K Modifying the viscosity of etchants
GB0601318D0 (en) * 2006-01-23 2006-03-01 Imp Innovations Ltd Method of etching a silicon-based material

Also Published As

Publication number Publication date
US20080268652A1 (en) 2008-10-30
FR2914925A1 (fr) 2008-10-17
EP1980607B1 (de) 2011-03-02
US8668840B2 (en) 2014-03-11
EP1980607A1 (de) 2008-10-15
FR2914925B1 (fr) 2009-06-05

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