DE602005021430D1 - Einkristall-Scheibe aus AlGaInN - Google Patents

Einkristall-Scheibe aus AlGaInN

Info

Publication number
DE602005021430D1
DE602005021430D1 DE602005021430T DE602005021430T DE602005021430D1 DE 602005021430 D1 DE602005021430 D1 DE 602005021430D1 DE 602005021430 T DE602005021430 T DE 602005021430T DE 602005021430 T DE602005021430 T DE 602005021430T DE 602005021430 D1 DE602005021430 D1 DE 602005021430D1
Authority
DE
Germany
Prior art keywords
algainn
single crystal
disk made
crystal disk
disk
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005021430T
Other languages
English (en)
Inventor
Shinsuke Fujiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE602005021430D1 publication Critical patent/DE602005021430D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE602005021430T 2004-06-04 2005-06-02 Einkristall-Scheibe aus AlGaInN Active DE602005021430D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004167377A JP2005347634A (ja) 2004-06-04 2004-06-04 ＡｌＧａＩｎＮ系単結晶ウエハ

Publications (1)

Publication Number Publication Date
DE602005021430D1 true DE602005021430D1 (de) 2010-07-08

Family

ID=34937176

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005021430T Active DE602005021430D1 (de) 2004-06-04 2005-06-02 Einkristall-Scheibe aus AlGaInN

Country Status (7)

Country Link
US (1) US7232555B2 (de)
EP (1) EP1602752B1 (de)
JP (1) JP2005347634A (de)
KR (1) KR101087478B1 (de)
CN (1) CN1715461A (de)
DE (1) DE602005021430D1 (de)
TW (1) TW200601417A (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7501023B2 (en) * 2001-07-06 2009-03-10 Technologies And Devices, International, Inc. Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
US8660966B2 (en) * 2007-08-31 2014-02-25 Microsoft Corporation Payment system and method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3296134B2 (ja) * 1994-04-07 2002-06-24 住友電気工業株式会社 ダイヤモンドウエハ−とその製造方法
US5858086A (en) 1996-10-17 1999-01-12 Hunter; Charles Eric Growth of bulk single crystals of aluminum nitride
US6063185A (en) 1998-10-09 2000-05-16 Cree, Inc. Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy
US6596079B1 (en) 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
JP3785067B2 (ja) * 2001-08-22 2006-06-14 株式会社東芝 半導体素子の製造方法

Also Published As

Publication number Publication date
US20050268842A1 (en) 2005-12-08
EP1602752A1 (de) 2005-12-07
US7232555B2 (en) 2007-06-19
CN1715461A (zh) 2006-01-04
JP2005347634A (ja) 2005-12-15
KR101087478B1 (ko) 2011-11-25
EP1602752B1 (de) 2010-05-26
KR20060048177A (ko) 2006-05-18
TW200601417A (en) 2006-01-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition