DE602005017461D1 - Elektronische Speichervorrichtung mit nichtflüchtigen Speicherzellen mit hoher Dichte und verringerter kapazitiver Zelle-zu-Zelle-Interferenz - Google Patents

Elektronische Speichervorrichtung mit nichtflüchtigen Speicherzellen mit hoher Dichte und verringerter kapazitiver Zelle-zu-Zelle-Interferenz

Info

Publication number
DE602005017461D1
DE602005017461D1 DE602005017461T DE602005017461T DE602005017461D1 DE 602005017461 D1 DE602005017461 D1 DE 602005017461D1 DE 602005017461 T DE602005017461 T DE 602005017461T DE 602005017461 T DE602005017461 T DE 602005017461T DE 602005017461 D1 DE602005017461 D1 DE 602005017461D1
Authority
DE
Germany
Prior art keywords
cell
storage device
memory cells
volatile memory
high density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005017461T
Other languages
English (en)
Inventor
Osama Khouri
Carlo Caimi
Giovanni Mastrodomenico
Paolo Caprara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Publication of DE602005017461D1 publication Critical patent/DE602005017461D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE602005017461T 2004-12-14 2005-12-14 Elektronische Speichervorrichtung mit nichtflüchtigen Speicherzellen mit hoher Dichte und verringerter kapazitiver Zelle-zu-Zelle-Interferenz Active DE602005017461D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT002373A ITMI20042373A1 (it) 2004-12-14 2004-12-14 Dispositivo elettronico di memoria con celle di memoria non-volatili ad alta densita' e con ridotta interferenza capacitiva fra le celle

Publications (1)

Publication Number Publication Date
DE602005017461D1 true DE602005017461D1 (de) 2009-12-17

Family

ID=35841936

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005017461T Active DE602005017461D1 (de) 2004-12-14 2005-12-14 Elektronische Speichervorrichtung mit nichtflüchtigen Speicherzellen mit hoher Dichte und verringerter kapazitiver Zelle-zu-Zelle-Interferenz

Country Status (4)

Country Link
US (1) US7319604B2 (de)
EP (1) EP1672645B1 (de)
DE (1) DE602005017461D1 (de)
IT (1) ITMI20042373A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080157169A1 (en) * 2006-12-28 2008-07-03 Yuan Jack H Shield plates for reduced field coupling in nonvolatile memory
KR101669261B1 (ko) * 2010-06-14 2016-10-25 삼성전자주식회사 수직 채널 트랜지스터를 구비한 반도체 소자 및 그 제조 방법
US20150070999A1 (en) * 2013-09-11 2015-03-12 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5293328A (en) * 1992-01-15 1994-03-08 National Semiconductor Corporation Electrically reprogrammable EPROM cell with merged transistor and optiumum area
JP2003282745A (ja) 2002-03-26 2003-10-03 Toshiba Corp 半導体記憶装置
US6750504B2 (en) * 2002-04-24 2004-06-15 Ememory Technology Inc. Low voltage single-poly flash memory cell and array
EP1435657A1 (de) * 2002-12-30 2004-07-07 STMicroelectronics S.r.l. Festwertspeicherzelle und Herstellungsverfahren
US7045849B2 (en) 2003-05-21 2006-05-16 Sandisk Corporation Use of voids between elements in semiconductor structures for isolation

Also Published As

Publication number Publication date
ITMI20042373A1 (it) 2005-03-14
EP1672645A1 (de) 2006-06-21
US7319604B2 (en) 2008-01-15
EP1672645B1 (de) 2009-11-04
US20060158931A1 (en) 2006-07-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition