DE602005004175D1 - Reflektierende lithographiemaske und verfahren zu deren herstellung - Google Patents

Reflektierende lithographiemaske und verfahren zu deren herstellung

Info

Publication number
DE602005004175D1
DE602005004175D1 DE602005004175T DE602005004175T DE602005004175D1 DE 602005004175 D1 DE602005004175 D1 DE 602005004175D1 DE 602005004175 T DE602005004175 T DE 602005004175T DE 602005004175 T DE602005004175 T DE 602005004175T DE 602005004175 D1 DE602005004175 D1 DE 602005004175D1
Authority
DE
Germany
Prior art keywords
production
lithographic mask
reflective lithographic
reflective
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005004175T
Other languages
English (en)
Other versions
DE602005004175T2 (de
Inventor
Christelle Charpin-Nicolle
Jean-Yves Robic
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of DE602005004175D1 publication Critical patent/DE602005004175D1/de
Application granted granted Critical
Publication of DE602005004175T2 publication Critical patent/DE602005004175T2/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE602005004175T 2004-10-19 2005-10-19 Reflektierende lithographiemaske und verfahren zu deren herstellung Active DE602005004175T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0411073A FR2876808B1 (fr) 2004-10-19 2004-10-19 Structure de masque pour lithographie
FR0411073 2004-10-19
PCT/FR2005/050868 WO2006043004A1 (fr) 2004-10-19 2005-10-19 Masque de lithographie reflechissant et procede de fabrication associe

Publications (2)

Publication Number Publication Date
DE602005004175D1 true DE602005004175D1 (de) 2008-02-14
DE602005004175T2 DE602005004175T2 (de) 2008-12-18

Family

ID=34950742

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005004175T Active DE602005004175T2 (de) 2004-10-19 2005-10-19 Reflektierende lithographiemaske und verfahren zu deren herstellung

Country Status (5)

Country Link
US (1) US7745070B2 (de)
EP (1) EP1803031B1 (de)
DE (1) DE602005004175T2 (de)
FR (1) FR2876808B1 (de)
WO (1) WO2006043004A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101484937B1 (ko) * 2008-07-02 2015-01-21 삼성전자주식회사 위상반전 마스크의 위상 측정 방법 및 이를 수행하기 위한장치
US8421995B2 (en) * 2008-10-24 2013-04-16 Asml Holding N.V. Anti-reflective coating for optical elements
US9366953B2 (en) * 2014-01-17 2016-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography mask

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2327620A1 (fr) * 1975-10-06 1977-05-06 Lignes Telegraph Telephon Perfectionnements aux condensateurs a electrolyte solide
US6298113B1 (en) * 2000-02-07 2001-10-02 General Electric Company Self aligning inter-scintillator reflector x-ray damage shield and method of manufacture
US6610447B2 (en) * 2001-03-30 2003-08-26 Intel Corporation Extreme ultraviolet mask with improved absorber
EP1498936B1 (de) * 2002-04-11 2012-11-14 Hoya Corporation Maskenrohling des reflexionstyps und maske des reflexionstyps und herstellungsverfahren dafür
US6909631B2 (en) * 2003-10-02 2005-06-21 Freescale Semiconductor, Inc. MRAM and methods for reading the MRAM
US6998204B2 (en) * 2003-11-13 2006-02-14 International Business Machines Corporation Alternating phase mask built by additive film deposition
US7282307B2 (en) * 2004-06-18 2007-10-16 Freescale Semiconductor, Inc. Reflective mask useful for transferring a pattern using extreme ultra violet (EUV) radiation and method of making the same

Also Published As

Publication number Publication date
EP1803031B1 (de) 2008-01-02
EP1803031A1 (de) 2007-07-04
US20070292772A1 (en) 2007-12-20
FR2876808B1 (fr) 2008-09-05
WO2006043004A1 (fr) 2006-04-27
US7745070B2 (en) 2010-06-29
DE602005004175T2 (de) 2008-12-18
FR2876808A1 (fr) 2006-04-21

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