DE60200438D1 - Wasserstoff-Getterstruktur mit silberdotierter Palladiumschicht zur Erhöhung des Wasserstoff-Getterns eines Halbleitermoduls, Halbleitermodul mit einer solchen Zusammensetzung und Herstellungsverfahren - Google Patents

Wasserstoff-Getterstruktur mit silberdotierter Palladiumschicht zur Erhöhung des Wasserstoff-Getterns eines Halbleitermoduls, Halbleitermodul mit einer solchen Zusammensetzung und Herstellungsverfahren

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Publication number
DE60200438D1
DE60200438D1 DE60200438T DE60200438T DE60200438D1 DE 60200438 D1 DE60200438 D1 DE 60200438D1 DE 60200438 T DE60200438 T DE 60200438T DE 60200438 T DE60200438 T DE 60200438T DE 60200438 D1 DE60200438 D1 DE 60200438D1
Authority
DE
Germany
Prior art keywords
semiconductor module
hydrogen
silver
manufacturing
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60200438T
Other languages
English (en)
Other versions
DE60200438T2 (de
Inventor
Dean Tran
Jerry T Fang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northrop Grumman Systems Corp
Original Assignee
Northrop Grumman Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northrop Grumman Corp filed Critical Northrop Grumman Corp
Application granted granted Critical
Publication of DE60200438D1 publication Critical patent/DE60200438D1/de
Publication of DE60200438T2 publication Critical patent/DE60200438T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/141—Analog devices
    • H01L2924/1423—Monolithic Microwave Integrated Circuit [MMIC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
DE60200438T 2001-07-27 2002-07-24 Wasserstoff-Getterstruktur mit silberdotierter Palladiumschicht zur Erhöhung des Wasserstoff-Getterns eines Halbleitermoduls, Halbleitermodul mit einer solchen Zusammensetzung und Herstellungsverfahren Expired - Lifetime DE60200438T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US917318 2001-07-27
US09/917,318 US6423575B1 (en) 2001-07-27 2001-07-27 Hydrogen gettering structure including silver-doped palladium layer to increase hydrogen gettering of module component and semiconductor device module having such structure, and methods of fabrication

Publications (2)

Publication Number Publication Date
DE60200438D1 true DE60200438D1 (de) 2004-06-09
DE60200438T2 DE60200438T2 (de) 2004-09-09

Family

ID=25438620

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60200438T Expired - Lifetime DE60200438T2 (de) 2001-07-27 2002-07-24 Wasserstoff-Getterstruktur mit silberdotierter Palladiumschicht zur Erhöhung des Wasserstoff-Getterns eines Halbleitermoduls, Halbleitermodul mit einer solchen Zusammensetzung und Herstellungsverfahren

Country Status (3)

Country Link
US (1) US6423575B1 (de)
EP (1) EP1280200B1 (de)
DE (1) DE60200438T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6673400B1 (en) * 1996-10-15 2004-01-06 Texas Instruments Incorporated Hydrogen gettering system
US7091605B2 (en) * 2001-09-21 2006-08-15 Eastman Kodak Company Highly moisture-sensitive electronic device element and method for fabrication
CA2339155C (en) * 1999-06-02 2008-05-27 Saes Getters S.P.A. Composite materials capable of hydrogen sorption independently from activating treatments and methods for the production thereof
US20030062610A1 (en) * 2001-09-28 2003-04-03 Kovacs Alan L. Multilayer thin film hydrogen getter
US6919623B2 (en) * 2003-12-12 2005-07-19 The Boeing Company Hydrogen diffusion hybrid port and method of forming
US7042076B2 (en) * 2004-03-09 2006-05-09 Northrop Grumman Corporation Vacuum sealed microdevice packaging with getters
US7315069B2 (en) * 2004-11-24 2008-01-01 Northrop Grumman Corporation Integrated multi-purpose getter for radio-frequency (RF) circuit modules
KR20100005255U (ko) * 2005-02-17 2010-05-20 세스 게터스 에스.피.에이 플렉시블 다층 게터
US7652223B2 (en) * 2005-06-13 2010-01-26 Applied Materials, Inc. Electron beam welding of sputtering target tiles
US7777318B2 (en) 2007-07-24 2010-08-17 Northrop Grumman Systems Corporation Wafer level packaging integrated hydrogen getter
FR2922202B1 (fr) * 2007-10-15 2009-11-20 Commissariat Energie Atomique Structure comportant une couche getter et une sous-couche d'ajustement et procede de fabrication.
FR2956521B1 (fr) * 2010-02-16 2012-08-17 Thales Sa Dispositif comprenant des composants electriques, electroniques, electromecaniques ou electro-optiques, a sensibilite reduite a faible debit de dose
DE102011056742B4 (de) * 2011-05-09 2019-07-18 Conti Temic Microelectronic Gmbh Steuergerät mit einer Getterschicht in einem Kraftfahrzeug
CN106098651B (zh) * 2016-08-17 2018-11-23 电子科技大学 一种功率器件封装结构及封装方法
US11894322B2 (en) 2018-05-29 2024-02-06 Analog Devices, Inc. Launch structures for radio frequency integrated device packages
US11424196B2 (en) 2018-06-01 2022-08-23 Analog Devices, Inc. Matching circuit for integrated circuit die
EP3866914B1 (de) * 2018-10-18 2023-08-23 Cardiac Pacemakers, Inc. Wasserstoffgetter mit röntgen-id-tag
US11417615B2 (en) 2018-11-27 2022-08-16 Analog Devices, Inc. Transition circuitry for integrated circuit die
US11350537B2 (en) * 2019-05-21 2022-05-31 Analog Devices, Inc. Electrical feedthrough assembly
CN110777369A (zh) * 2019-11-10 2020-02-11 中电国基南方集团有限公司 一种主动式封装吸氢材料及其制备方法
CN110699649A (zh) * 2019-11-10 2020-01-17 中电国基南方集团有限公司 一种用于电子封装的吸氢材料及其制备方法
US11744021B2 (en) 2022-01-21 2023-08-29 Analog Devices, Inc. Electronic assembly

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51148193A (en) * 1975-06-13 1976-12-20 Toshiba Corp A nuclear fuel element
US5491361A (en) * 1994-10-14 1996-02-13 The Aerospace Corporation Hydrogen out venting electronic package
US6673400B1 (en) * 1996-10-15 2004-01-06 Texas Instruments Incorporated Hydrogen gettering system
US6110808A (en) * 1998-12-04 2000-08-29 Trw Inc. Hydrogen getter for integrated microelectronic assembly
JP2001168240A (ja) * 1999-10-08 2001-06-22 Trw Inc 集積型マイクロエレクトロニクスモジュール

Also Published As

Publication number Publication date
EP1280200B1 (de) 2004-05-06
DE60200438T2 (de) 2004-09-09
EP1280200A1 (de) 2003-01-29
US6423575B1 (en) 2002-07-23

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