DE602004023406D1 - Steuerverfahren für eine lichtempfindliche einrichtung - Google Patents

Steuerverfahren für eine lichtempfindliche einrichtung

Info

Publication number
DE602004023406D1
DE602004023406D1 DE602004023406T DE602004023406T DE602004023406D1 DE 602004023406 D1 DE602004023406 D1 DE 602004023406D1 DE 602004023406 T DE602004023406 T DE 602004023406T DE 602004023406 T DE602004023406 T DE 602004023406T DE 602004023406 D1 DE602004023406 D1 DE 602004023406D1
Authority
DE
Germany
Prior art keywords
light
control procedure
sensible device
sensible
procedure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004023406T
Other languages
English (en)
Inventor
Paul Apard
David Couder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Trixell SAS
Original Assignee
Trixell SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Trixell SAS filed Critical Trixell SAS
Publication of DE602004023406D1 publication Critical patent/DE602004023406D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00Details of television systems
    • H04N5/30Transforming light or analogous information into electric information
    • H04N5/32Transforming X-rays
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/20Measuring radiation intensity with scintillation detectors
    • G01T1/2018Scintillation-photodiode combinations
    • G01T1/20184Detector read-out circuitry, e.g. for clearing of traps, compensating for traps or compensating for direct hits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/617Noise processing, e.g. detecting, correcting, reducing or removing noise for reducing electromagnetic interference, e.g. clocking noise
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75Circuitry for providing, modifying or processing image signals from the pixel array
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
DE602004023406T 2003-10-17 2004-10-13 Steuerverfahren für eine lichtempfindliche einrichtung Active DE602004023406D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0312183A FR2861242B1 (fr) 2003-10-17 2003-10-17 Procede de commande d'un dispositif photosensible
PCT/EP2004/052526 WO2005036871A1 (fr) 2003-10-17 2004-10-13 Procede de commande d'un dispositif photosensible

Publications (1)

Publication Number Publication Date
DE602004023406D1 true DE602004023406D1 (de) 2009-11-12

Family

ID=34385262

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004023406T Active DE602004023406D1 (de) 2003-10-17 2004-10-13 Steuerverfahren für eine lichtempfindliche einrichtung

Country Status (8)

Country Link
US (1) US7728889B2 (de)
EP (1) EP1673932B1 (de)
JP (1) JP4637110B2 (de)
CN (1) CN1868205A (de)
CA (1) CA2539506C (de)
DE (1) DE602004023406D1 (de)
FR (1) FR2861242B1 (de)
WO (1) WO2005036871A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2975213B1 (fr) 2011-05-10 2013-05-10 Trixell Sas Dispositif d'adressage de lignes d'un circuit de commande pour matrice active de detection
JP5935284B2 (ja) 2011-10-18 2016-06-15 ソニー株式会社 撮像装置および撮像表示システム
JP5859364B2 (ja) * 2012-03-30 2016-02-10 旭化成エレクトロニクス株式会社 受光強度演算デバイス及び位置検出デバイス
EP2806456A4 (de) 2012-03-29 2015-03-18 Asahi Kasei Microdevices Corp Lichtaufnahmevorrichtung
JP5917233B2 (ja) * 2012-03-30 2016-05-11 旭化成エレクトロニクス株式会社 受光強度演算デバイス及び位置検出デバイス
US9554759B2 (en) * 2013-09-18 2017-01-31 Carestream Health, Inc. Digital radiography detector image readout process
FR3029054B1 (fr) * 2014-11-24 2018-01-26 Commissariat A L'energie Atomique Et Aux Energies Alternatives Controle de la duree d'integration dans un dispositif photosensible
JP7148269B2 (ja) * 2018-05-02 2022-10-05 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および撮像装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2605166B1 (fr) 1986-10-09 1989-02-10 Thomson Csf Dispositif photosensible a l'etat solide, procede de lecture et procede de fabrication
FR2626127B1 (fr) * 1988-01-15 1990-05-04 Thomson Csf Matrice photosensible a trois diodes par point, sans remise a niveau
DE4118154A1 (de) * 1991-06-03 1992-12-10 Philips Patentverwaltung Anordnung mit einer sensormatrix und einer ruecksetzanordnung
US5668375A (en) * 1996-08-26 1997-09-16 General Electric Company Fast scan reset for a large area x-ray detector
FR2760585B1 (fr) 1997-03-07 1999-05-28 Thomson Tubes Electroniques Procede de commande d'un dispositif photosensible a faible remanence, et dispositif photosensible mettant en oeuvre le procede
FR2770954B1 (fr) * 1997-11-12 2000-01-28 Trixell Sas Procede de commande d'un detecteur d'image numerique a faible remanence, et detecteur d'image mettant en oeuvre le procede
GB2332585B (en) * 1997-12-18 2000-09-27 Simage Oy Device for imaging radiation
US7142240B1 (en) * 2000-07-17 2006-11-28 Psion Teklogix Systems, Inc. Active pixel sensor array reset
GB0027931D0 (en) * 2000-11-16 2001-01-03 Sgs Thomson Microelectronics Solid state imaging device
US7830435B2 (en) * 2003-09-03 2010-11-09 Eastman Kodak Company Image sensor and image capture system with extended dynamic range

Also Published As

Publication number Publication date
CA2539506C (fr) 2013-09-17
JP2007508763A (ja) 2007-04-05
WO2005036871A1 (fr) 2005-04-21
EP1673932B1 (de) 2009-09-30
FR2861242B1 (fr) 2006-01-20
EP1673932A1 (de) 2006-06-28
JP4637110B2 (ja) 2011-02-23
CA2539506A1 (fr) 2005-04-21
FR2861242A1 (fr) 2005-04-22
US7728889B2 (en) 2010-06-01
CN1868205A (zh) 2006-11-22
US20070229688A1 (en) 2007-10-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition