DE602004021251D1 - Festkörperbildsensor mit elektronischer Kontrolle der Apertur - Google Patents
Festkörperbildsensor mit elektronischer Kontrolle der AperturInfo
- Publication number
- DE602004021251D1 DE602004021251D1 DE602004021251T DE602004021251T DE602004021251D1 DE 602004021251 D1 DE602004021251 D1 DE 602004021251D1 DE 602004021251 T DE602004021251 T DE 602004021251T DE 602004021251 T DE602004021251 T DE 602004021251T DE 602004021251 D1 DE602004021251 D1 DE 602004021251D1
- Authority
- DE
- Germany
- Prior art keywords
- image sensor
- solid state
- state image
- aperture control
- electronic aperture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000007787 solid Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04405490A EP1624491B1 (de) | 2004-08-04 | 2004-08-04 | Festkörperbildsensor mit elektronischer Kontrolle der Apertur |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602004021251D1 true DE602004021251D1 (de) | 2009-07-09 |
Family
ID=34932228
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004021251T Active DE602004021251D1 (de) | 2004-08-04 | 2004-08-04 | Festkörperbildsensor mit elektronischer Kontrolle der Apertur |
Country Status (4)
Country | Link |
---|---|
US (1) | US8436401B2 (de) |
EP (1) | EP1624491B1 (de) |
DE (1) | DE602004021251D1 (de) |
WO (1) | WO2006012764A1 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1624490B1 (de) * | 2004-08-04 | 2018-10-03 | Heptagon Micro Optics Pte. Ltd. | Grossflächiger Pixel für die Verwendung in einem Bildsensor |
GB2446429A (en) | 2006-12-08 | 2008-08-13 | E2V Tech | Photosensor with variable sensing area |
GB0803702D0 (en) | 2008-02-28 | 2008-04-09 | Isis Innovation | Transparent conducting oxides |
DE102009001159A1 (de) * | 2009-02-25 | 2010-09-02 | Johann Wolfgang Goethe-Universität Frankfurt am Main | Elektrooptische Kamera mit demodulierendem Detektorarray |
KR101623960B1 (ko) | 2009-06-04 | 2016-05-25 | 삼성전자주식회사 | 광전자 셔터, 이의 동작 방법 및 광전자 셔터를 채용한 광학 장치 |
GB0915376D0 (en) | 2009-09-03 | 2009-10-07 | Isis Innovation | Transparent conducting oxides |
US8464952B2 (en) * | 2009-11-18 | 2013-06-18 | Hand Held Products, Inc. | Optical reader having improved back-illuminated image sensor |
FR2961347B1 (fr) * | 2010-06-15 | 2012-08-24 | E2V Semiconductors | Capteur d'image a multiplication d'electrons |
ITUD20110149A1 (it) * | 2011-09-29 | 2013-03-30 | Monica Vatteroni | Dispositivo fotorilevatore per sensori elettro-ottici a dinamica di luce variabile |
TWI465979B (zh) * | 2012-04-16 | 2014-12-21 | Au Optronics Corp | 觸控面板 |
EP2867923B1 (de) | 2012-06-27 | 2020-01-15 | Teledyne Dalsa B.V. | Bildsensor und vorrichtung mit solch einem bildsensor |
US9191637B2 (en) * | 2013-09-10 | 2015-11-17 | Kabushiki Kaisha Toshiba | Solid-state imaging apparatus |
EP3193190B1 (de) * | 2016-01-15 | 2023-04-12 | Sony Depthsensing Solutions N.V. | Detektorvorrichtung mit majoritätsstrom und schaltung zur steuerung des stroms |
CN109814083B (zh) * | 2018-11-14 | 2024-06-14 | 光微信息科技(合肥)有限公司 | 电流辅助光子解调型像素单元、背照式图像传感器芯片、成像系统、形成方法和测算方法 |
CN112864183B (zh) * | 2021-01-18 | 2023-08-25 | 上海集成电路装备材料产业创新中心有限公司 | 一种改善传输迟滞的像元结构 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4481522A (en) * | 1982-03-24 | 1984-11-06 | Rca Corporation | CCD Imagers with substrates having drift field |
US4994405A (en) * | 1989-11-21 | 1991-02-19 | Eastman Kodak Company | Area image sensor with transparent electrodes |
JPH06140442A (ja) * | 1992-10-29 | 1994-05-20 | Matsushita Electric Ind Co Ltd | 電荷転送装置 |
DE4440613C1 (de) | 1994-11-14 | 1996-07-25 | Leica Ag | Vorrichtung und Verfahren zur Detektion und Demodulation eines intensitätsmodulierten Strahlungsfeldes |
US5591996A (en) * | 1995-03-24 | 1997-01-07 | Analog Devices, Inc. | Recirculating charge transfer magnetic field sensor |
SE509569C2 (sv) | 1995-10-26 | 1999-02-08 | Hoernell International Ab | Vätskekristallslutarkonstruktion |
ES2206748T3 (es) | 1996-09-05 | 2004-05-16 | Rudolf Schwarte | Procedimiento y dispositivo para la determinacion de la informacion sobre fases y/o amplitudes de una onda electromagnetica. |
KR100246358B1 (ko) | 1997-09-25 | 2000-03-15 | 김영환 | 전자셔터를 구비한 액티브 픽셀 센서 |
US6667768B1 (en) | 1998-02-17 | 2003-12-23 | Micron Technology, Inc. | Photodiode-type pixel for global electronic shutter and reduced lag |
DE10035135B4 (de) | 2000-07-19 | 2010-02-18 | Sick Ag | Verfahren und Vorrichtung zur Entfernungsmessung |
US6906793B2 (en) * | 2000-12-11 | 2005-06-14 | Canesta, Inc. | Methods and devices for charge management for three-dimensional sensing |
US7352454B2 (en) * | 2000-11-09 | 2008-04-01 | Canesta, Inc. | Methods and devices for improved charge management for three-dimensional and color sensing |
EP1356525A1 (de) * | 2001-01-23 | 2003-10-29 | Dalsa Corporation | Ladungsgekoppelte anordnung |
TW530951U (en) | 2001-05-30 | 2003-05-01 | Hon Hai Prec Ind Co Ltd | Manual tunable optical attenuator |
GB2389960A (en) * | 2002-06-20 | 2003-12-24 | Suisse Electronique Microtech | Four-tap demodulation pixel |
DE10228103A1 (de) | 2002-06-24 | 2004-01-15 | Bayer Cropscience Ag | Fungizide Wirkstoffkombinationen |
ATE306745T1 (de) * | 2003-03-10 | 2005-10-15 | Suisse Electronique Microtech | Elektrische schaltung, verfahren und vorrichtung zur demodulation eines intensitätsmodulierten signals |
JP4391145B2 (ja) * | 2003-06-27 | 2009-12-24 | 富士フイルム株式会社 | 固体撮像装置 |
-
2004
- 2004-08-04 EP EP04405490A patent/EP1624491B1/de not_active Not-in-force
- 2004-08-04 DE DE602004021251T patent/DE602004021251D1/de active Active
-
2005
- 2005-07-27 US US11/659,313 patent/US8436401B2/en not_active Expired - Fee Related
- 2005-07-27 WO PCT/CH2005/000445 patent/WO2006012764A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
EP1624491A1 (de) | 2006-02-08 |
US20090026508A1 (en) | 2009-01-29 |
US8436401B2 (en) | 2013-05-07 |
WO2006012764A1 (en) | 2006-02-09 |
EP1624491B1 (de) | 2009-05-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |