DE602004019026D1 - Magnetoresistives Element, magnetische Speicherzelle, und Magnetspeicher - Google Patents

Magnetoresistives Element, magnetische Speicherzelle, und Magnetspeicher

Info

Publication number
DE602004019026D1
DE602004019026D1 DE602004019026T DE602004019026T DE602004019026D1 DE 602004019026 D1 DE602004019026 D1 DE 602004019026D1 DE 602004019026 T DE602004019026 T DE 602004019026T DE 602004019026 T DE602004019026 T DE 602004019026T DE 602004019026 D1 DE602004019026 D1 DE 602004019026D1
Authority
DE
Germany
Prior art keywords
magnetic memory
magnetoresistive element
memory cell
cell
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004019026T
Other languages
English (en)
Inventor
Hitoshi Hatate
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Publication of DE602004019026D1 publication Critical patent/DE602004019026D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
DE602004019026T 2003-09-05 2004-09-03 Magnetoresistives Element, magnetische Speicherzelle, und Magnetspeicher Active DE602004019026D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003314639A JP4544396B2 (ja) 2003-09-05 2003-09-05 磁気記憶セルおよび磁気メモリデバイス

Publications (1)

Publication Number Publication Date
DE602004019026D1 true DE602004019026D1 (de) 2009-03-05

Family

ID=34131919

Family Applications (2)

Application Number Title Priority Date Filing Date
DE602004007282T Active DE602004007282T2 (de) 2003-09-05 2004-09-03 Magnetoresistives Element, Magnetspeicherzelle und Magnetspeichervorrichtung
DE602004019026T Active DE602004019026D1 (de) 2003-09-05 2004-09-03 Magnetoresistives Element, magnetische Speicherzelle, und Magnetspeicher

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE602004007282T Active DE602004007282T2 (de) 2003-09-05 2004-09-03 Magnetoresistives Element, Magnetspeicherzelle und Magnetspeichervorrichtung

Country Status (5)

Country Link
US (1) US7449760B2 (de)
EP (2) EP1513158B1 (de)
JP (1) JP4544396B2 (de)
CN (1) CN1591674B (de)
DE (2) DE602004007282T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4596230B2 (ja) * 2002-09-13 2010-12-08 Ｔｄｋ株式会社 磁気メモリデバイスおよびその製造方法
JP2018128390A (ja) * 2017-02-09 2018-08-16 Tdk株式会社 磁気センサとその製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5343422A (en) 1993-02-23 1994-08-30 International Business Machines Corporation Nonvolatile magnetoresistive storage device using spin valve effect
US5629922A (en) 1995-02-22 1997-05-13 Massachusetts Institute Of Technology Electron tunneling device using ferromagnetic thin films
JP3333670B2 (ja) 1995-09-22 2002-10-15 ティーディーケイ株式会社 磁性薄膜メモリ
US6028786A (en) * 1997-04-28 2000-02-22 Canon Kabushiki Kaisha Magnetic memory element having coupled magnetic layers forming closed magnetic circuit
DE19836567C2 (de) * 1998-08-12 2000-12-07 Siemens Ag Speicherzellenanordnung mit Speicherelementen mit magnetoresistivem Effekt und Verfahren zu deren Herstellung
JP3738165B2 (ja) * 2000-03-10 2006-01-25 シャープ株式会社 磁気メモリセル
JP2001273759A (ja) * 2000-03-27 2001-10-05 Sharp Corp 磁気メモリセルと磁気メモリ装置
JP2002289807A (ja) * 2001-03-27 2002-10-04 Toshiba Corp 磁気メモリ装置および磁気抵抗効果素子
TW569442B (en) * 2001-12-18 2004-01-01 Toshiba Corp Magnetic memory device having magnetic shield layer, and manufacturing method thereof
JP3959335B2 (ja) * 2002-07-30 2007-08-15 株式会社東芝 磁気記憶装置及びその製造方法
JP4596230B2 (ja) * 2002-09-13 2010-12-08 Ｔｄｋ株式会社 磁気メモリデバイスおよびその製造方法
JP4729836B2 (ja) * 2003-03-28 2011-07-20 Ｔｄｋ株式会社 磁気記憶セルおよび磁気メモリデバイスならびに磁気メモリデバイスの製造方法
JP2005044847A (ja) * 2003-07-23 2005-02-17 Tdk Corp 磁気抵抗効果素子、磁気記憶セルおよび磁気メモリデバイスならびにそれらの製造方法

Also Published As

Publication number Publication date
EP1513158B1 (de) 2009-01-14
US7449760B2 (en) 2008-11-11
EP1679719A1 (de) 2006-07-12
DE602004007282D1 (de) 2007-08-09
DE602004007282T2 (de) 2008-03-06
JP2005085902A (ja) 2005-03-31
CN1591674A (zh) 2005-03-09
CN1591674B (zh) 2010-05-26
US20050052899A1 (en) 2005-03-10
EP1679719B1 (de) 2007-06-27
JP4544396B2 (ja) 2010-09-15
EP1513158A1 (de) 2005-03-09

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Legal Events

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8364 No opposition during term of opposition