DE60142126D1 - Verfahren und vorrichtung zur ionenstrahl-sputterbeschichtung - Google Patents
Verfahren und vorrichtung zur ionenstrahl-sputterbeschichtungInfo
- Publication number
- DE60142126D1 DE60142126D1 DE60142126T DE60142126T DE60142126D1 DE 60142126 D1 DE60142126 D1 DE 60142126D1 DE 60142126 T DE60142126 T DE 60142126T DE 60142126 T DE60142126 T DE 60142126T DE 60142126 D1 DE60142126 D1 DE 60142126D1
- Authority
- DE
- Germany
- Prior art keywords
- vox
- ion beam
- beam sputter
- controlled
- environment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title abstract 4
- 238000004544 sputter deposition Methods 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- 229910052786 argon Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000001659 ion-beam spectroscopy Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 229910052720 vanadium Inorganic materials 0.000 abstract 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K17/00—Measuring quantity of heat
- G01K17/003—Measuring quantity of heat for measuring the power of light beams, e.g. laser beams
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Combustion & Propulsion (AREA)
- Fluid Mechanics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2001/017755 WO2002099155A1 (en) | 2001-06-01 | 2001-06-01 | Ion beam sputter deposition process |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60142126D1 true DE60142126D1 (de) | 2010-06-24 |
Family
ID=21742617
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60142126T Expired - Lifetime DE60142126D1 (de) | 2001-06-01 | 2001-06-01 | Verfahren und vorrichtung zur ionenstrahl-sputterbeschichtung |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1395688B1 (de) |
JP (1) | JP4911875B2 (de) |
AT (1) | ATE467695T1 (de) |
DE (1) | DE60142126D1 (de) |
WO (1) | WO2002099155A1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20060030543A (ko) * | 2004-10-06 | 2006-04-11 | 주식회사 케이씨텍 | 중성화 빔을 이용한 oled 및 그 제조 방법 |
JP4962837B2 (ja) * | 2006-02-27 | 2012-06-27 | 独立行政法人産業技術総合研究所 | 赤外線センサの製造方法 |
GB0805328D0 (en) * | 2008-03-25 | 2008-04-30 | Aviza Technologies Ltd | Deposition of an amorphous layer |
JP4941412B2 (ja) * | 2008-06-19 | 2012-05-30 | 住友金属鉱山株式会社 | 耐熱遮光フィルムの製造方法 |
JP6216222B2 (ja) * | 2013-11-11 | 2017-10-18 | 株式会社アルバック | 酸化膜形成方法、ボロメータ素子製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4166784A (en) * | 1978-04-28 | 1979-09-04 | Applied Films Lab, Inc. | Feedback control for vacuum deposition apparatus |
US5286976A (en) * | 1988-11-07 | 1994-02-15 | Honeywell Inc. | Microstructure design for high IR sensitivity |
JPH04136165A (ja) * | 1990-09-26 | 1992-05-11 | Shimadzu Corp | 反応性ガス導入型成膜装置 |
US5801383A (en) * | 1995-11-22 | 1998-09-01 | Masahiro Ota, Director General, Technical Research And Development Institute, Japan Defense Agency | VOX film, wherein X is greater than 1.875 and less than 2.0, and a bolometer-type infrared sensor comprising the VOX film |
US6322670B2 (en) * | 1996-12-31 | 2001-11-27 | Honeywell International Inc. | Flexible high performance microbolometer detector material fabricated via controlled ion beam sputter deposition process |
US5900799A (en) * | 1997-10-03 | 1999-05-04 | Mcdonnell Douglas Corporation | High responsivity thermochromic infrared detector |
JP3727208B2 (ja) * | 1999-11-15 | 2005-12-14 | シャープ株式会社 | 感温抵抗変化膜およびその製造方法、並びにそれを用いた遠赤外線センサー |
-
2001
- 2001-06-01 JP JP2003502262A patent/JP4911875B2/ja not_active Expired - Fee Related
- 2001-06-01 AT AT01941781T patent/ATE467695T1/de not_active IP Right Cessation
- 2001-06-01 EP EP01941781A patent/EP1395688B1/de not_active Expired - Lifetime
- 2001-06-01 DE DE60142126T patent/DE60142126D1/de not_active Expired - Lifetime
- 2001-06-01 WO PCT/US2001/017755 patent/WO2002099155A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
JP4911875B2 (ja) | 2012-04-04 |
JP2004530047A (ja) | 2004-09-30 |
EP1395688A1 (de) | 2004-03-10 |
EP1395688B1 (de) | 2010-05-12 |
WO2002099155A1 (en) | 2002-12-12 |
ATE467695T1 (de) | 2010-05-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |