DE60135191D1 - Vorläufer zur MOCVD in Lösungsmittelmischungen - Google Patents

Vorläufer zur MOCVD in Lösungsmittelmischungen

Info

Publication number
DE60135191D1
DE60135191D1 DE60135191T DE60135191T DE60135191D1 DE 60135191 D1 DE60135191 D1 DE 60135191D1 DE 60135191 T DE60135191 T DE 60135191T DE 60135191 T DE60135191 T DE 60135191T DE 60135191 D1 DE60135191 D1 DE 60135191D1
Authority
DE
Germany
Prior art keywords
mocvd
precursor
solvent mixtures
mixtures
solvent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60135191T
Other languages
English (en)
Inventor
Tingkai Li
Wei-Wei Zhuang
Sheng Teng Hsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE60135191D1 publication Critical patent/DE60135191D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
DE60135191T 2000-08-28 2001-08-24 Vorläufer zur MOCVD in Lösungsmittelmischungen Expired - Lifetime DE60135191D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/649,381 US6503314B1 (en) 2000-08-28 2000-08-28 MOCVD ferroelectric and dielectric thin films depositions using mixed solvents

Publications (1)

Publication Number Publication Date
DE60135191D1 true DE60135191D1 (de) 2008-09-18

Family

ID=24604536

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60135191T Expired - Lifetime DE60135191D1 (de) 2000-08-28 2001-08-24 Vorläufer zur MOCVD in Lösungsmittelmischungen

Country Status (6)

Country Link
US (1) US6503314B1 (de)
EP (1) EP1184485B1 (de)
JP (1) JP4007573B2 (de)
KR (1) KR100441549B1 (de)
DE (1) DE60135191D1 (de)
TW (1) TWI257435B (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6664116B2 (en) * 2001-12-12 2003-12-16 Sharp Laboratories Of America, Inc. Seed layer processes for MOCVD of ferroelectric thin films on high-k gate oxides
US6887523B2 (en) * 2002-12-20 2005-05-03 Sharp Laboratories Of America, Inc. Method for metal oxide thin film deposition via MOCVD
JP4643196B2 (ja) * 2003-07-25 2011-03-02 三星電子株式会社 金属化合物膜の蒸着方法
KR101001741B1 (ko) * 2003-08-18 2010-12-15 삼성전자주식회사 반도체 장치의 커패시터 및 그 제조 방법과 커패시터를구비하는 메모리 장치
US7157111B2 (en) * 2003-09-30 2007-01-02 Sharp Laboratories Of America, Inc. MOCVD selective deposition of C-axis oriented PB5GE3O11 thin films on In2O3 oxides
WO2005121400A1 (ja) * 2004-06-10 2005-12-22 Mitsubishi Materials Corporation 有機金属化学蒸着法用溶液原料及び該原料を用いて作製された複合酸化物系誘電体薄膜
KR100636023B1 (ko) 2005-08-02 2006-10-18 삼성전자주식회사 유기금속 전구체 및 이를 이용한 박막 제조방법
US7771913B2 (en) 2006-04-04 2010-08-10 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process using the same
JP5514437B2 (ja) * 2007-12-28 2014-06-04 三菱マテリアル株式会社 誘電体薄膜の製造方法。
JP6225544B2 (ja) * 2013-07-31 2017-11-08 株式会社デンソー 圧電素子の製造方法
WO2019166318A1 (en) * 2018-03-02 2019-09-06 Asml Netherlands B.V. Method and apparatus for forming a patterned layer of material

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5453494A (en) 1990-07-06 1995-09-26 Advanced Technology Materials, Inc. Metal complex source reagents for MOCVD
US5820664A (en) 1990-07-06 1998-10-13 Advanced Technology Materials, Inc. Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions comprising same
US5225561A (en) 1990-07-06 1993-07-06 Advanced Technology Materials, Inc. Source reagent compounds for MOCVD of refractory films containing group IIA elements
US5783716A (en) * 1996-06-28 1998-07-21 Advanced Technology Materials, Inc. Platinum source compositions for chemical vapor deposition of platinum
US6010744A (en) * 1997-12-23 2000-01-04 Advanced Technology Materials, Inc. Method for nucleation controlled chemical vapor deposition of metal oxide ferroelectric thin films
US6410343B1 (en) * 1999-04-28 2002-06-25 Sharp Laboratories Of America, Inc. C-axis oriented lead germanate film and deposition method
US6190925B1 (en) * 1999-04-28 2001-02-20 Sharp Laboratories Of America, Inc. Epitaxially grown lead germanate film and deposition method
US6590243B2 (en) * 1999-04-28 2003-07-08 Sharp Laboratories Of America, Inc. Ferroelastic lead germanate thin film and deposition method

Also Published As

Publication number Publication date
US6503314B1 (en) 2003-01-07
JP2002121675A (ja) 2002-04-26
TWI257435B (en) 2006-07-01
JP4007573B2 (ja) 2007-11-14
KR20020017984A (ko) 2002-03-07
EP1184485B1 (de) 2008-08-06
KR100441549B1 (ko) 2004-07-23
EP1184485A1 (de) 2002-03-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition