DE60120254D1 - Abscheidung und thermische Behandlung von dünnen Schichten aus Mehrkomponentenoxyden von Typ ZrSnTi und HfSnTi unter Verwendung eines flüssigen lösungsmittelfreien Vorläufergemisch - Google Patents
Abscheidung und thermische Behandlung von dünnen Schichten aus Mehrkomponentenoxyden von Typ ZrSnTi und HfSnTi unter Verwendung eines flüssigen lösungsmittelfreien VorläufergemischInfo
- Publication number
- DE60120254D1 DE60120254D1 DE60120254T DE60120254T DE60120254D1 DE 60120254 D1 DE60120254 D1 DE 60120254D1 DE 60120254 T DE60120254 T DE 60120254T DE 60120254 T DE60120254 T DE 60120254T DE 60120254 D1 DE60120254 D1 DE 60120254D1
- Authority
- DE
- Germany
- Prior art keywords
- thin films
- hfsnti
- zrsnti
- deposition
- thermal treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Inorganic Insulating Materials (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US522634 | 2000-03-10 | ||
US09/522,634 US6500499B1 (en) | 2000-03-10 | 2000-03-10 | Deposition and annealing of multicomponent ZrSnTi and HfSnTi oxide thin films using solventless liquid mixture of precursors |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60120254D1 true DE60120254D1 (de) | 2006-07-20 |
DE60120254T2 DE60120254T2 (de) | 2006-09-21 |
Family
ID=24081662
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60120254T Expired - Fee Related DE60120254T2 (de) | 2000-03-10 | 2001-03-08 | Abscheidung und thermische Behandlung von dünnen Schichten aus Mehrkomponentenoxyden von Typ ZrSnTi und HfSnTi unter Verwendung eines flüssigen lösungsmittelfreien Vorläufergemisch |
Country Status (7)
Country | Link |
---|---|
US (1) | US6500499B1 (de) |
EP (1) | EP1132494B1 (de) |
JP (1) | JP3523211B2 (de) |
KR (1) | KR100398495B1 (de) |
AT (1) | ATE329065T1 (de) |
DE (1) | DE60120254T2 (de) |
TW (1) | TW583333B (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6503561B1 (en) * | 1999-07-08 | 2003-01-07 | Air Products And Chemicals, Inc. | Liquid precursor mixtures for deposition of multicomponent metal containing materials |
WO2002027063A2 (en) | 2000-09-28 | 2002-04-04 | President And Fellows Of Harward College | Vapor deposition of oxides, silicates and phosphates |
US7101813B2 (en) | 2002-12-04 | 2006-09-05 | Micron Technology Inc. | Atomic layer deposited Zr-Sn-Ti-O films |
US6958302B2 (en) * | 2002-12-04 | 2005-10-25 | Micron Technology, Inc. | Atomic layer deposited Zr-Sn-Ti-O films using TiI4 |
US6887523B2 (en) * | 2002-12-20 | 2005-05-03 | Sharp Laboratories Of America, Inc. | Method for metal oxide thin film deposition via MOCVD |
US7183186B2 (en) | 2003-04-22 | 2007-02-27 | Micro Technology, Inc. | Atomic layer deposited ZrTiO4 films |
US7588988B2 (en) | 2004-08-31 | 2009-09-15 | Micron Technology, Inc. | Method of forming apparatus having oxide films formed using atomic layer deposition |
US7494939B2 (en) | 2004-08-31 | 2009-02-24 | Micron Technology, Inc. | Methods for forming a lanthanum-metal oxide dielectric layer |
KR100584783B1 (ko) | 2005-02-24 | 2006-05-30 | 삼성전자주식회사 | 복합막 형성 방법과 이를 이용한 게이트 구조물 및 커패시터 제조 방법 |
US7393736B2 (en) | 2005-08-29 | 2008-07-01 | Micron Technology, Inc. | Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics |
JP2007194582A (ja) * | 2005-12-20 | 2007-08-02 | Tokyo Electron Ltd | 高誘電体薄膜の改質方法及び半導体装置 |
US7972974B2 (en) | 2006-01-10 | 2011-07-05 | Micron Technology, Inc. | Gallium lanthanide oxide films |
US11193206B2 (en) * | 2017-03-15 | 2021-12-07 | Versum Materials Us, Llc | Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE393967B (sv) | 1974-11-29 | 1977-05-31 | Sateko Oy | Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket |
DE3322304A1 (de) * | 1983-06-21 | 1985-01-03 | Siemens AG, 1000 Berlin und 8000 München | Streifenleitungsdopplerradar |
JPH0776090B2 (ja) * | 1989-07-06 | 1995-08-16 | 株式会社ライムズ | ジルコニア薄膜の製造方法 |
US5820664A (en) | 1990-07-06 | 1998-10-13 | Advanced Technology Materials, Inc. | Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions comprising same |
US5204314A (en) | 1990-07-06 | 1993-04-20 | Advanced Technology Materials, Inc. | Method for delivering an involatile reagent in vapor form to a CVD reactor |
US5559363A (en) * | 1995-06-06 | 1996-09-24 | Martin Marietta Corporation | Off-chip impedance matching utilizing a dielectric element and high density interconnect technology |
US5980983A (en) | 1997-04-17 | 1999-11-09 | The President And Fellows Of Harvard University | Liquid precursors for formation of metal oxides |
US5912797A (en) * | 1997-09-24 | 1999-06-15 | Lucent Technologies Inc. | Dielectric materials of amorphous compositions and devices employing same |
-
2000
- 2000-03-10 US US09/522,634 patent/US6500499B1/en not_active Expired - Fee Related
-
2001
- 2001-03-06 TW TW090105208A patent/TW583333B/zh not_active IP Right Cessation
- 2001-03-08 DE DE60120254T patent/DE60120254T2/de not_active Expired - Fee Related
- 2001-03-08 AT AT01105786T patent/ATE329065T1/de not_active IP Right Cessation
- 2001-03-08 EP EP01105786A patent/EP1132494B1/de not_active Expired - Lifetime
- 2001-03-09 KR KR10-2001-0012173A patent/KR100398495B1/ko not_active IP Right Cessation
- 2001-03-12 JP JP2001069477A patent/JP3523211B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1132494B1 (de) | 2006-06-07 |
JP3523211B2 (ja) | 2004-04-26 |
TW583333B (en) | 2004-04-11 |
EP1132494A3 (de) | 2003-11-12 |
KR20010089235A (ko) | 2001-09-29 |
DE60120254T2 (de) | 2006-09-21 |
US6500499B1 (en) | 2002-12-31 |
JP2001316820A (ja) | 2001-11-16 |
ATE329065T1 (de) | 2006-06-15 |
KR100398495B1 (ko) | 2003-09-19 |
EP1132494A2 (de) | 2001-09-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60120254D1 (de) | Abscheidung und thermische Behandlung von dünnen Schichten aus Mehrkomponentenoxyden von Typ ZrSnTi und HfSnTi unter Verwendung eines flüssigen lösungsmittelfreien Vorläufergemisch | |
TWI393803B (zh) | 用於使用溶液為主先質以供原子層沉積之方法及裝置 | |
EP2290126B1 (de) | Atomlagenbeschichtung (ALD) mit Metall Beta-Diektiminat-Verbindungen | |
US6238734B1 (en) | Liquid precursor mixtures for deposition of multicomponent metal containing materials | |
de Rouffignac et al. | Atomic layer deposition of Y2O3 thin films from yttrium tris (N, N ‘-diisopropylacetamidinate) and Water | |
KR101003214B1 (ko) | 알코올을 이용하여 금속 산화물을 형성하는 시스템 및 방법 | |
US6503561B1 (en) | Liquid precursor mixtures for deposition of multicomponent metal containing materials | |
JP4168676B2 (ja) | 製膜方法 | |
US6159855A (en) | Organometallic compound mixtures in chemical vapor deposition | |
JP4158975B2 (ja) | ナノラミネート膜の原子層堆積 | |
KR100591508B1 (ko) | 산화물 박막의 원자층 증착 | |
US6958300B2 (en) | Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides | |
US7087481B2 (en) | Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands | |
CN101048853B (zh) | 用于膜形成的前驱体和用于形成含钌膜的方法 | |
EP0920435B1 (de) | Ram speicher und das in deren herstellung verwendete platindampfabscheidungsverfahren | |
Lee et al. | Atomic layer deposition of SrTiO3 films with cyclopentadienyl-based precursors for metal–insulator–metal capacitors | |
US20020187644A1 (en) | Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same | |
RU2006143063A (ru) | Способ нанесения покрытия методом осаждения при магнетронном распылении в вакууме | |
EP1866963A2 (de) | Mehrschichtige mehrkomponentenfolien mit hoher dielektrizitätskonstante und verfahren zu ihrer abscheidung | |
US20040043633A1 (en) | Systems and methods for forming refractory metal oxide layers | |
EP2196557A1 (de) | Ausgangsverbindungen zur Abscheidung von Schichten, die Gruppe-4-Metalle enthalten | |
US20080194088A1 (en) | Vapor deposition methods for forming a metal-containing layer on a substrate | |
US20040043635A1 (en) | Systems and methods for forming metal oxides using metal diketonates and/or ketoimines | |
Gougousi et al. | Metal oxide thin films deposited from metal organic precursors in supercritical CO2 solutions | |
Armelao et al. | Microstructural and Optical Properties Modifications Induced by Plasma and Annealing Treatments of Lanthanum Oxide Sol− Gel Thin Films |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |