DE60113797D1 - Material für eine wärme-abführende platte auf der ein halbleiter montiert ist, herstellungsmethode und keramisches gehäuse,produziert unter verwendung derselben - Google Patents

Material für eine wärme-abführende platte auf der ein halbleiter montiert ist, herstellungsmethode und keramisches gehäuse,produziert unter verwendung derselben

Info

Publication number
DE60113797D1
DE60113797D1 DE60113797T DE60113797T DE60113797D1 DE 60113797 D1 DE60113797 D1 DE 60113797D1 DE 60113797 T DE60113797 T DE 60113797T DE 60113797 T DE60113797 T DE 60113797T DE 60113797 D1 DE60113797 D1 DE 60113797D1
Authority
DE
Germany
Prior art keywords
semiconductor
manufacturing
produced
heat
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60113797T
Other languages
English (en)
Other versions
DE60113797T2 (de
Inventor
Mitsuo Osada
Norio Hirayama
Tadashi Arikawa
Yoshinari Amano
Hidetoshi Maesato
Hidefumi Hayashi
Hiroshi Murai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ALMT Corp
Original Assignee
ALMT Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000372405A external-priority patent/JP3856640B2/ja
Application filed by ALMT Corp filed Critical ALMT Corp
Publication of DE60113797D1 publication Critical patent/DE60113797D1/de
Application granted granted Critical
Publication of DE60113797T2 publication Critical patent/DE60113797T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/0475—Impregnated alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/04—Alloys based on tungsten or molybdenum
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H01L21/4878—Mechanical treatment, e.g. deforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermal Sciences (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Powder Metallurgy (AREA)
DE60113797T 2000-04-14 2001-04-12 Material für eine wärme-abführende platte auf der ein halbleiter montiert ist, herstellungsmethode und keramisches gehäuse,produziert unter verwendung derselben Expired - Fee Related DE60113797T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2000113006 2000-04-14
JP2000113006 2000-04-14
JP2000372405A JP3856640B2 (ja) 2000-01-26 2000-12-07 半導体搭載用放熱基板材料、その製造方法、及びそれを用いたセラミックパッケージ
JP2000372405 2000-12-07
PCT/JP2001/003164 WO2001080313A1 (en) 2000-04-14 2001-04-12 Material of heat-dissipating plate on which semiconductor is mounted, method for fabricating the same, and ceramic package produced by using the same

Publications (2)

Publication Number Publication Date
DE60113797D1 true DE60113797D1 (de) 2006-02-16
DE60113797T2 DE60113797T2 (de) 2006-06-08

Family

ID=26590109

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60113797T Expired - Fee Related DE60113797T2 (de) 2000-04-14 2001-04-12 Material für eine wärme-abführende platte auf der ein halbleiter montiert ist, herstellungsmethode und keramisches gehäuse,produziert unter verwendung derselben

Country Status (4)

Country Link
EP (2) EP1231633B1 (de)
AT (1) ATE306119T1 (de)
DE (1) DE60113797T2 (de)
WO (1) WO2001080313A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005046404B4 (de) 2005-09-28 2008-12-24 Infineon Technologies Ag Verfahren zur Minderung von Streuungen in der Durchbiegung von gewalzten Bodenplatten und Leistungshalbleitermodul mit einer nach diesem Verfahren hergestellten Bodenplatte
EP1985718A4 (de) * 2006-02-15 2009-09-16 Jfe Prec Corp Cr-Cu-LEGIERUNG, HERSTELLUNGSVERFAHREN DAFÜR, KÜHLKÖRPER FÜR EINEN HALBLEITER SOWIE WÄRMEABLEITKOMPONENTE FÜR EINEN HALBLEITER
US20090035632A1 (en) * 2007-07-31 2009-02-05 Kirkwood Brad L Solid oxide fuel cell electrode systems and methods
WO2011040044A1 (ja) 2009-10-01 2011-04-07 Jfe精密株式会社 電子機器用放熱板およびその製造方法
CN102489508A (zh) * 2011-12-06 2012-06-13 无锡乐普金属科技有限公司 钼铜合金箔片的交叉轧制方法
CN102601116A (zh) * 2012-03-19 2012-07-25 长沙升华微电子材料有限公司 一种铜基电子封装材料的制备方法
CN103143714B (zh) * 2013-03-29 2015-01-14 西北有色金属研究院 一种Cu/MoCu/Cu三层复合板坯的制备方法
JP5818045B1 (ja) * 2014-12-05 2015-11-18 株式会社半導体熱研究所 放熱基板と、それを使用した半導体パッケージと半導体モジュール
JP6455896B1 (ja) 2017-11-18 2019-01-23 Jfe精密株式会社 放熱板及びその製造方法
US11315868B2 (en) * 2018-03-23 2022-04-26 Mitsubishi Materials Corporation Electronic-component-mounted module design to reduce linear expansion coefficient mismatches

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3426916A1 (de) * 1984-07-21 1986-01-23 Vacuumschmelze Gmbh, 6450 Hanau Verfahren zur herstellung eines verbundwerkstoffes
JP2746279B2 (ja) * 1990-06-18 1998-05-06 日本タングステン 株式会社 半導体装置用基板材料及びその製造方法
US5493153A (en) * 1992-11-26 1996-02-20 Tokyo Tungsten Co., Ltd. Plastic-packaged semiconductor device having a heat sink matched with a plastic package
JPH0892667A (ja) * 1994-09-22 1996-04-09 Tokyo Tungsten Co Ltd 金属複合材料及びその製造方法
JP3482580B2 (ja) * 1995-11-28 2003-12-22 株式会社アライドマテリアル 高放熱性金属複合板材及びそれを用いた高放熱性金属基板
JP3548991B2 (ja) * 1997-08-22 2004-08-04 株式会社アライドマテリアル 放熱基板及びその製造方法
JP2000026926A (ja) * 1998-07-08 2000-01-25 Tokyo Tungsten Co Ltd リードフレーム用複合材とそれを用いた半導体パッケージ

Also Published As

Publication number Publication date
EP1231633A4 (de) 2003-05-28
ATE306119T1 (de) 2005-10-15
EP1553627A1 (de) 2005-07-13
EP1231633A1 (de) 2002-08-14
DE60113797T2 (de) 2006-06-08
EP1231633B1 (de) 2005-10-05
WO2001080313A1 (en) 2001-10-25

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