DE60105228D1 - Material für mit Wismut substituierte Granat-Dickschicht und zugehöriges Herstellungsverfahren - Google Patents

Material für mit Wismut substituierte Granat-Dickschicht und zugehöriges Herstellungsverfahren

Info

Publication number
DE60105228D1
DE60105228D1 DE60105228T DE60105228T DE60105228D1 DE 60105228 D1 DE60105228 D1 DE 60105228D1 DE 60105228 T DE60105228 T DE 60105228T DE 60105228 T DE60105228 T DE 60105228T DE 60105228 D1 DE60105228 D1 DE 60105228D1
Authority
DE
Germany
Prior art keywords
bismuth
manufacturing process
associated manufacturing
garnet layer
layer substituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60105228T
Other languages
English (en)
Other versions
DE60105228T2 (de
Inventor
Tadakuni Sato
Kazumitsu Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokin Corp
Original Assignee
NEC Tokin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Tokin Corp filed Critical NEC Tokin Corp
Publication of DE60105228D1 publication Critical patent/DE60105228D1/de
Application granted granted Critical
Publication of DE60105228T2 publication Critical patent/DE60105228T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H01F10/20—Ferrites
    • H01F10/24—Garnets
    • H01F10/245—Modifications for enhancing interaction with electromagnetic wave energy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/24—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids
    • H01F41/28—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids by liquid phase epitaxy

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Compounds Of Iron (AREA)
DE60105228T 2000-06-06 2001-06-06 Material für mit Wismut substituierte Granat-Dickschicht und zugehöriges Herstellungsverfahren Expired - Fee Related DE60105228T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000169308A JP2001348297A (ja) 2000-06-06 2000-06-06 ビスマス置換型ガーネット厚膜材料及びその製造方法
JP2000169308 2000-06-06

Publications (2)

Publication Number Publication Date
DE60105228D1 true DE60105228D1 (de) 2004-10-07
DE60105228T2 DE60105228T2 (de) 2005-08-11

Family

ID=18672187

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60105228T Expired - Fee Related DE60105228T2 (de) 2000-06-06 2001-06-06 Material für mit Wismut substituierte Granat-Dickschicht und zugehöriges Herstellungsverfahren

Country Status (8)

Country Link
US (1) US6542299B2 (de)
EP (1) EP1162635B1 (de)
JP (1) JP2001348297A (de)
KR (1) KR20010110329A (de)
CN (1) CN1329184A (de)
CA (1) CA2349871A1 (de)
DE (1) DE60105228T2 (de)
TW (1) TW524900B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7133189B2 (en) * 2002-02-22 2006-11-07 Tdk Corporation Magnetic garnet material, faraday rotator, optical device, bismuth-substituted rare earth-iron-garnet single-crystal film and method for producing the same and crucible for producing the same
CN101319390B (zh) * 2008-06-06 2012-12-26 电子科技大学 无铅镥铋石榴石薄膜制备方法
JP5528827B2 (ja) * 2010-01-25 2014-06-25 信越化学工業株式会社 光アイソレータ
PL3041912T3 (pl) 2013-12-17 2017-09-29 Koninklijke Philips N.V. Kompozycja scyntylatora granatu
US9771304B2 (en) 2015-06-15 2017-09-26 Skyworks Solutions, Inc. Ultra-high dielectric constant garnet
CN114150365A (zh) * 2021-10-29 2022-03-08 中国科学院福建物质结构研究所 一种大尺寸钇铁石榴石单晶的制备方法
CN114853077B (zh) * 2022-05-12 2023-09-05 闽都创新实验室 一种铁氧体粉体及其制备方法和应用

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5615125B2 (de) 1972-04-14 1981-04-08
CA1050862A (en) 1973-10-04 1979-03-20 Richard E. Novak Magnetic bubble devices and garnet films therefor
EP0559412B1 (de) * 1992-03-02 1997-01-22 TDK Corporation Verfahren zur Herstellung eines dünnen Filmes durch epitaktisches Wachstum
JPH11236297A (ja) 1998-02-20 1999-08-31 Tokin Corp ビスマス置換型ガーネット厚膜材料及びその製造方法

Also Published As

Publication number Publication date
US6542299B2 (en) 2003-04-01
JP2001348297A (ja) 2001-12-18
KR20010110329A (ko) 2001-12-13
EP1162635B1 (de) 2004-09-01
US20010052828A1 (en) 2001-12-20
CN1329184A (zh) 2002-01-02
EP1162635A1 (de) 2001-12-12
TW524900B (en) 2003-03-21
CA2349871A1 (en) 2001-12-06
DE60105228T2 (de) 2005-08-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee