DE60100233D1 - Keimschicht - Google Patents
KeimschichtInfo
- Publication number
- DE60100233D1 DE60100233D1 DE60100233T DE60100233T DE60100233D1 DE 60100233 D1 DE60100233 D1 DE 60100233D1 DE 60100233 T DE60100233 T DE 60100233T DE 60100233 T DE60100233 T DE 60100233T DE 60100233 D1 DE60100233 D1 DE 60100233D1
- Authority
- DE
- Germany
- Prior art keywords
- seed layer
- seed
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/28—Sensitising or activating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76868—Forming or treating discontinuous thin films, e.g. repair, enhancement or reinforcement of discontinuous thin films
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1068—Formation and after-treatment of conductors
- H01L2221/1073—Barrier, adhesion or liner layers
- H01L2221/1084—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L2221/1089—Stacks of seed layers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US24308500P | 2000-10-25 | 2000-10-25 | |
US243085P | 2000-10-25 | ||
US09/981,851 US6660154B2 (en) | 2000-10-25 | 2001-10-17 | Seed layer |
US981851 | 2010-12-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60100233D1 true DE60100233D1 (de) | 2003-06-05 |
DE60100233T2 DE60100233T2 (de) | 2004-04-08 |
Family
ID=26935579
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60100233T Expired - Fee Related DE60100233T2 (de) | 2000-10-25 | 2001-10-23 | Keimschicht |
Country Status (3)
Country | Link |
---|---|
US (1) | US6660154B2 (de) |
EP (1) | EP1201790B1 (de) |
DE (1) | DE60100233T2 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW529090B (en) * | 2001-04-04 | 2003-04-21 | Koninkl Philips Electronics Nv | Back-end metallisation process |
JP3964263B2 (ja) * | 2002-05-17 | 2007-08-22 | 株式会社デンソー | ブラインドビアホール充填方法及び貫通電極形成方法 |
JP2004346422A (ja) * | 2003-05-23 | 2004-12-09 | Rohm & Haas Electronic Materials Llc | めっき方法 |
US7429401B2 (en) | 2003-05-23 | 2008-09-30 | The United States of America as represented by the Secretary of Commerce, the National Insitiute of Standards & Technology | Superconformal metal deposition using derivatized substrates |
GB0514964D0 (en) | 2005-07-21 | 2005-08-24 | Ms Horizons Ltd | Mass spectrometer devices & methods of performing mass spectrometry |
US8195693B2 (en) | 2004-12-16 | 2012-06-05 | International Business Machines Corporation | Automatic composition of services through semantic attribute matching |
US7345370B2 (en) * | 2005-01-12 | 2008-03-18 | International Business Machines Corporation | Wiring patterns formed by selective metal plating |
US20060253476A1 (en) * | 2005-05-09 | 2006-11-09 | Roth Mary A | Technique for relationship discovery in schemas using semantic name indexing |
US7346887B2 (en) * | 2005-11-09 | 2008-03-18 | International Business Machines Corporation | Method for fabricating integrated circuit features |
US20070178697A1 (en) * | 2006-02-02 | 2007-08-02 | Enthone Inc. | Copper electrodeposition in microelectronics |
US7905994B2 (en) | 2007-10-03 | 2011-03-15 | Moses Lake Industries, Inc. | Substrate holder and electroplating system |
US7928011B2 (en) * | 2008-01-04 | 2011-04-19 | Qimonda Ag | Method for structuring a substrate using a metal mask layer formed using a galvanization process |
US8088246B2 (en) * | 2009-01-08 | 2012-01-03 | Cordani Jr John L | Process for improving the adhesion of polymeric materials to metal surfaces |
US8262894B2 (en) | 2009-04-30 | 2012-09-11 | Moses Lake Industries, Inc. | High speed copper plating bath |
WO2019066900A1 (en) * | 2017-09-29 | 2019-04-04 | Intel Corporation | APPARATUS WITH SUBSTRATE FORMED BY AUTOCATALYTIC METAL DEPOSITION USING POLYELECTROLYTES FOR ADSORING METALLIC IONS IN THE SUBSTRATE |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3011920A (en) | 1959-06-08 | 1961-12-05 | Shipley Co | Method of electroless deposition on a substrate and catalyst solution therefor |
US4681630A (en) | 1982-09-27 | 1987-07-21 | Learonal, Inc. | Method of making copper colloid for activating insulating surfaces |
US4762560A (en) * | 1982-09-27 | 1988-08-09 | Learonal, Inc. | Copper colloid and method of activating insulating surfaces for subsequent electroplating |
JPS63130779A (ja) | 1986-11-20 | 1988-06-02 | Nec Corp | プラスチツクの無電解めつき方法 |
US5518760A (en) | 1994-10-14 | 1996-05-21 | Macdermid, Incorporated | Composition and method for selective plating |
US6002177A (en) * | 1995-12-27 | 1999-12-14 | International Business Machines Corporation | High density integrated circuit packaging with chip stacking and via interconnections |
US5750018A (en) | 1997-03-18 | 1998-05-12 | Learonal, Inc. | Cyanide-free monovalent copper electroplating solutions |
TW593731B (en) | 1998-03-20 | 2004-06-21 | Semitool Inc | Apparatus for applying a metal structure to a workpiece |
JP2002534807A (ja) | 1999-01-08 | 2002-10-15 | アプライド マテリアルズ インコーポレイテッド | フィーチャ表面カバレッジの改善を促進する銅シード層の堆積方法 |
US6156626A (en) * | 1999-02-27 | 2000-12-05 | Philips Electronics North America Corp. | Electromigration bonding process and system |
US6444110B2 (en) * | 1999-05-17 | 2002-09-03 | Shipley Company, L.L.C. | Electrolytic copper plating method |
EP1111096A3 (de) | 1999-12-15 | 2004-02-11 | Shipley Company LLC | Reparaturverfahren einer Keimschicht |
US6660153B2 (en) | 2000-10-20 | 2003-12-09 | Shipley Company, L.L.C. | Seed layer repair bath |
US20020090484A1 (en) | 2000-10-20 | 2002-07-11 | Shipley Company, L.L.C. | Plating bath |
US6824665B2 (en) | 2000-10-25 | 2004-11-30 | Shipley Company, L.L.C. | Seed layer deposition |
US20020079232A1 (en) | 2000-10-25 | 2002-06-27 | Shipley Company, L.L.C. | Seed layer deposition |
US6797146B2 (en) | 2000-11-02 | 2004-09-28 | Shipley Company, L.L.C. | Seed layer repair |
-
2001
- 2001-10-17 US US09/981,851 patent/US6660154B2/en not_active Expired - Fee Related
- 2001-10-23 DE DE60100233T patent/DE60100233T2/de not_active Expired - Fee Related
- 2001-10-23 EP EP01308994A patent/EP1201790B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE60100233T2 (de) | 2004-04-08 |
EP1201790A1 (de) | 2002-05-02 |
EP1201790B1 (de) | 2003-05-02 |
US6660154B2 (en) | 2003-12-09 |
US20020084193A1 (en) | 2002-07-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
NO20032561L (no) | Enhetlig fordelingssjikt | |
DK1226127T3 (da) | Substituerede phenylsulfamoylcarboxamider | |
ATE307121T1 (de) | Substituierte arylpyrazine | |
EE200200680A (et) | Parendatud luminofoorid | |
AR028393A1 (es) | Iminoazidas substituidas | |
ITPD20000186A0 (it) | Struttura di fioriera | |
EE200200420A (et) | Linesoliid - kristallivorm II | |
DE60100233D1 (de) | Keimschicht | |
AR028336A1 (es) | 4-hidroxi-tetrahidropiridonas fenilsubstituidas | |
DE50209070D1 (de) | Sämaschine | |
DE60030011D1 (de) | Umpflanzungsmaschine | |
AR028302A1 (es) | Feniluracilos substituidos | |
ATE365721T1 (de) | Substituierte benzoylcyclohexenone | |
AR028061A1 (es) | 2-enamino-cetonitrilos fenil-substituidos | |
AR027931A1 (es) | Antitranspirantes | |
AR027982A1 (es) | Aril- y heteroarilsulfonatos | |
DE60132749D1 (de) | Sämaschine | |
DE10195992T1 (de) | Oberflächenendbearbeitungsbelag | |
AT500246B8 (de) | Chokerring | |
FR2817889B1 (fr) | Coffrage | |
FI4651U1 (fi) | Kaivo | |
FI20001398A (fi) | Kaivo | |
DE60143981D1 (de) | Substratstruktur | |
FI4644U1 (fi) | Kylvökone | |
FI4556U1 (fi) | Kukkamaljakko |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |