DE60042181D1 - Vaporization device for CVD device - Google Patents

Vaporization device for CVD device

Info

Publication number
DE60042181D1
DE60042181D1 DE60042181T DE60042181T DE60042181D1 DE 60042181 D1 DE60042181 D1 DE 60042181D1 DE 60042181 T DE60042181 T DE 60042181T DE 60042181 T DE60042181 T DE 60042181T DE 60042181 D1 DE60042181 D1 DE 60042181D1
Authority
DE
Germany
Prior art keywords
cvd
vaporization
vaporization device
cvd device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60042181T
Other languages
German (de)
Inventor
Shigeru Matsuno
Takehiko Sato
Akira Yamada
Masayoshi Tarutani
Mikio Yamamuka
Tsuyoshi Horikawa
Takaaki Kawahara
Fusaoki Uchikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE60042181D1 publication Critical patent/DE60042181D1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45559—Diffusion of reactive gas to substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
DE60042181T 1999-03-25 2000-03-22 Vaporization device for CVD device Expired - Lifetime DE60042181D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP08149999A JP3823591B2 (en) 1999-03-25 1999-03-25 Vaporizing apparatus for CVD raw material and CVD apparatus using the same

Publications (1)

Publication Number Publication Date
DE60042181D1 true DE60042181D1 (en) 2009-06-25

Family

ID=13748077

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60042181T Expired - Lifetime DE60042181D1 (en) 1999-03-25 2000-03-22 Vaporization device for CVD device

Country Status (6)

Country Link
US (2) US6273957B1 (en)
EP (1) EP1038988B1 (en)
JP (1) JP3823591B2 (en)
KR (1) KR100377707B1 (en)
DE (1) DE60042181D1 (en)
TW (1) TW486524B (en)

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US7163197B2 (en) * 2000-09-26 2007-01-16 Shimadzu Corporation Liquid substance supply device for vaporizing system, vaporizer, and vaporization performance appraisal method
DE10057491A1 (en) * 2000-11-20 2002-05-23 Aixtron Ag Process for introducing a liquid starting material brought into gas form into a chemical vapour deposition (CVD) reactor comprises forming an aerosol, vaporizing the heat supply and removing the heat of vaporization
EP1211333A3 (en) * 2000-12-01 2003-07-30 Japan Pionics Co., Ltd. Vaporizer for CVD apparatus
US7246796B2 (en) 2001-01-18 2007-07-24 Masayuki Toda Carburetor, various types of devices using the carburetor, and method of vaporization
JP2002313781A (en) * 2001-04-11 2002-10-25 Sumitomo Electric Ind Ltd Substrate treating equipment
KR20030050941A (en) * 2001-12-20 2003-06-25 주성엔지니어링(주) Vaporizer which can prevent clogging
JP3778851B2 (en) * 2001-12-25 2006-05-24 Ｓｍｃ株式会社 Poppet valve with heater
US6758591B1 (en) 2002-03-22 2004-07-06 Novellus Systems, Inc. Mixing of materials in an integrated circuit manufacturing equipment
JP4259203B2 (en) * 2002-10-29 2009-04-30 トヨタ自動車株式会社 Fuel reformer and fuel cell system
US6997403B2 (en) * 2003-01-13 2006-02-14 Micron Technology, Inc. Liquid vaporizer with positive liquid shut-off
US7067458B2 (en) * 2003-02-26 2006-06-27 Tdk Corporation Multi-layered unit including electrode and dielectric layer
EP1598871A1 (en) * 2003-02-27 2005-11-23 TDK Corporation Thin-film capacitative element and electronic circuit or electronic equipment including the same
US20050194098A1 (en) * 2003-03-24 2005-09-08 Advanced Energy Industries, Inc. Cast design for plasma chamber cooling
SE527139C2 (en) 2003-04-16 2005-12-27 Xcounter Ab Device and method for dual-energy and scan-based detection of ionized radiation with stacked line detectors and filters
JP2004335564A (en) * 2003-05-01 2004-11-25 Japan Pionics Co Ltd Vaporizer
US20050271893A1 (en) * 2004-06-04 2005-12-08 Applied Microstructures, Inc. Controlled vapor deposition of multilayered coatings adhered by an oxide layer
DE102004021578A1 (en) * 2003-09-17 2005-04-21 Aixtron Ag Method and apparatus for depositing mono- or multi-component layers and layer sequences using non-continuous injection of liquid and dissolved starting substances via a multi-channel injection unit
WO2005026401A2 (en) * 2003-09-17 2005-03-24 Aixtron Ag Method and device for depositing layers using non-continuous injection
JP2005133157A (en) * 2003-10-30 2005-05-26 Watanabe Shoko:Kk Organometal chemical vapor deposition apparatus
JP4607474B2 (en) * 2004-02-12 2011-01-05 東京エレクトロン株式会社 Deposition equipment
FR2900070B1 (en) 2006-04-19 2008-07-11 Kemstream Soc Par Actions Simp DEVICE FOR INTRODUCING OR INJECTING OR SPRAYING A MIXTURE OF VECTOR GAS AND LIQUID COMPOUNDS AND METHOD FOR CARRYING OUT SAID DEVICE.
WO2009101953A1 (en) * 2008-02-14 2009-08-20 Ulvac, Inc. Vapor generating apparatus and deposition apparatus
JP2010087169A (en) * 2008-09-30 2010-04-15 Tokyo Electron Ltd Carburetor and film-forming system using the same
JP5416570B2 (en) * 2009-12-15 2014-02-12 住友電気工業株式会社 Heating / cooling device and apparatus equipped with the same
EP2369033A1 (en) * 2010-03-26 2011-09-28 Saint-Gobain Glass France Method for refilling an evaporation chamber
US9861610B2 (en) 2011-08-01 2018-01-09 Akay Flavours & Aromatics Pvt Ltd. Process for selective extraction of bioactive and bioavailable cinnamon polyphenols and procyanidin oligomers and a stable composition thereof
JP6199744B2 (en) * 2011-12-20 2017-09-20 株式会社日立国際電気 Substrate processing apparatus, semiconductor device manufacturing method, and vaporizing apparatus
US8778081B2 (en) 2012-01-04 2014-07-15 Colorado State University Research Foundation Process and hardware for deposition of complex thin-film alloys over large areas
KR102269079B1 (en) * 2015-05-08 2021-06-25 (주)지오엘리먼트 vaporizer
KR101725959B1 (en) * 2015-05-08 2017-04-21 (주)지오엘리먼트 vaporizer
KR102584113B1 (en) 2015-11-10 2023-10-04 도쿄엘렉트론가부시키가이샤 Vaporizer, film forming device and temperature control method
CN108780752A (en) * 2016-03-24 2018-11-09 株式会社国际电气 The manufacturing method of gasifier, substrate processing device and semiconductor devices
CN111742394A (en) * 2018-03-23 2020-10-02 株式会社国际电气 Vaporizer, substrate processing apparatus, and method of manufacturing semiconductor device
WO2024185380A1 (en) * 2023-03-07 2024-09-12 信越化学工業株式会社 Film formation nozzle and film formation device

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US4219725A (en) * 1978-08-01 1980-08-26 The Dow Chemical Company Heating apparatus for vaporizing liquefied gases
DE3513307A1 (en) * 1985-04-13 1986-10-16 Henkel KGaA, 4000 Düsseldorf ELECTRICAL DEVICE FOR EVAPORATING INSECTICIDAL ACTIVE SUBSTANCE
JPS621870A (en) * 1985-06-25 1987-01-07 Nec Corp Vapor depositing apparatus
DE4041623A1 (en) * 1990-12-22 1992-06-25 Osu Maschinenbau Gmbh NOZZLE FOR A DEVICE AND A METHOD FOR HIGH-SPEED FLAME SPRAYING
JPH06291040A (en) * 1992-03-03 1994-10-18 Rintetsuku:Kk Method and apparatus for vaporizing and supplying liquid
JP3720083B2 (en) 1995-07-21 2005-11-24 株式会社日立製作所 Method and apparatus for manufacturing thin film for semiconductor element, and semiconductor wafer
JP3276277B2 (en) * 1995-11-29 2002-04-22 株式会社フジクラ Liquid material supply device for CVD
US5835678A (en) * 1996-10-03 1998-11-10 Emcore Corporation Liquid vaporizer system and method
US5835677A (en) * 1996-10-03 1998-11-10 Emcore Corporation Liquid vaporizer system and method
US6074487A (en) * 1997-02-13 2000-06-13 Shimadzu Corporation Unit for vaporizing liquid materials
JP3645682B2 (en) 1997-03-18 2005-05-11 三菱電機株式会社 CVD equipment for Cu film formation
KR100516847B1 (en) * 1997-05-16 2005-11-30 동경 엘렉트론 주식회사 Steam generation method and apparatus
US6210485B1 (en) * 1998-07-21 2001-04-03 Applied Materials, Inc. Chemical vapor deposition vaporizer
GB9900955D0 (en) * 1999-01-15 1999-03-10 Imperial College Material deposition

Also Published As

Publication number Publication date
TW486524B (en) 2002-05-11
KR20000076945A (en) 2000-12-26
EP1038988A2 (en) 2000-09-27
EP1038988A3 (en) 2003-01-29
KR100377707B1 (en) 2003-03-26
EP1038988B1 (en) 2009-05-13
US20010039923A1 (en) 2001-11-15
JP2000273639A (en) 2000-10-03
JP3823591B2 (en) 2006-09-20
US6273957B1 (en) 2001-08-14

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Legal Events

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