DE60040829D1 - Thermische masse für langpuls-elektronikbauteile - Google Patents

Thermische masse für langpuls-elektronikbauteile

Info

Publication number
DE60040829D1
DE60040829D1 DE60040829T DE60040829T DE60040829D1 DE 60040829 D1 DE60040829 D1 DE 60040829D1 DE 60040829 T DE60040829 T DE 60040829T DE 60040829 T DE60040829 T DE 60040829T DE 60040829 D1 DE60040829 D1 DE 60040829D1
Authority
DE
Germany
Prior art keywords
electronic components
thermal mass
long pulse
pulse electronic
long
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60040829T
Other languages
English (en)
Inventor
Didier Floriot
Sylvain Delage
Simone Cassette
Jean-Pascal Duchemin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thales SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales SA filed Critical Thales SA
Application granted granted Critical
Publication of DE60040829D1 publication Critical patent/DE60040829D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3672—Foil-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3732—Diamonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
DE60040829T 1999-05-21 2000-05-19 Thermische masse für langpuls-elektronikbauteile Expired - Lifetime DE60040829D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9906513A FR2793953B1 (fr) 1999-05-21 1999-05-21 Capacite thermique pour composant electronique fonctionnant en impulsions longues
PCT/FR2000/001375 WO2000072379A1 (fr) 1999-05-21 2000-05-19 Capacite thermique pour composant electronique fonctionnant en impulsions longues

Publications (1)

Publication Number Publication Date
DE60040829D1 true DE60040829D1 (de) 2009-01-02

Family

ID=9545897

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60040829T Expired - Lifetime DE60040829D1 (de) 1999-05-21 2000-05-19 Thermische masse für langpuls-elektronikbauteile

Country Status (6)

Country Link
US (1) US6559534B1 (de)
EP (1) EP1110242B1 (de)
JP (1) JP2003500859A (de)
DE (1) DE60040829D1 (de)
FR (1) FR2793953B1 (de)
WO (1) WO2000072379A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2827424B1 (fr) * 2001-07-13 2005-02-18 Thales Sa Composant electronique encapsule comportant un dispositif electronique de puissance et procede de fabrication
JP3976089B2 (ja) * 2002-08-09 2007-09-12 株式会社リコー 半導体集積回路装置及びその製造方法
FR2857781B1 (fr) * 2003-07-15 2005-09-30 Thales Sa Transistor bipolaire a heterojonction a transfert thermique ameliore
US8916966B2 (en) * 2004-09-28 2014-12-23 Triquint Semiconductor, Inc. Integrated circuit including a heat dissipation structure
US20090001517A1 (en) * 2007-06-27 2009-01-01 Leland Scott Swanson Thermally enhanced semiconductor devices
US10319830B2 (en) * 2017-01-24 2019-06-11 Qualcomm Incorporated Heterojunction bipolar transistor power amplifier with backside thermal heatsink

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3761783A (en) * 1972-02-02 1973-09-25 Sperry Rand Corp Duel-mesa ring-shaped high frequency diode
FR2328286A1 (fr) * 1975-10-14 1977-05-13 Thomson Csf Procede de fabrication de dispositifs a semiconducteurs, presentant une tres faible resistance thermique, et dispositifs obtenus par ledit procede
US4160992A (en) * 1977-09-14 1979-07-10 Raytheon Company Plural semiconductor devices mounted between plural heat sinks
DE3067381D1 (en) * 1979-11-15 1984-05-10 Secr Defence Brit Series-connected combination of two-terminal semiconductor devices and their fabrication
FR2667724B1 (fr) 1990-10-09 1992-11-27 Thomson Csf Procede de realisation des metallisations d'electrodes d'un transistor.
JP3111599B2 (ja) * 1992-03-02 2000-11-27 松下電器産業株式会社 光電子集積回路
JP2913077B2 (ja) * 1992-09-18 1999-06-28 シャープ株式会社 半導体装置
FR2697945B1 (fr) 1992-11-06 1995-01-06 Thomson Csf Procédé de gravure d'une hétérostructure de matériaux du groupe III-V.
US5734193A (en) * 1994-01-24 1998-03-31 The United States Of America As Represented By The Secretary Of The Air Force Termal shunt stabilization of multiple part heterojunction bipolar transistors
JP4308904B2 (ja) * 1994-05-05 2009-08-05 シリコニックス・インコーポレイテッド 表面取り付け及びフリップチップ技術
FR2727570B1 (fr) 1994-11-25 1997-01-24 Thomson Csf Amplificateur hyperfrequence monolithique haute integration, a topologie distribuee arborescente
FR2736468B1 (fr) 1995-07-07 1997-08-14 Thomson Csf Transistor bipolaire a structure optimisee
FR2736764B1 (fr) 1995-07-13 1997-08-08 Thomson Csf Source laser a semiconducteurs
FR2737342B1 (fr) * 1995-07-25 1997-08-22 Thomson Csf Composant semiconducteur avec dissipateur thermique integre
JP3229185B2 (ja) * 1995-12-26 2001-11-12 シャープ株式会社 半導体チップ、その製造方法、半導体素子、および半導体装置
FR2764118B1 (fr) 1997-05-30 2000-08-04 Thomson Csf Transistor bipolaire stabilise avec elements isolants electriques
US6051871A (en) * 1998-06-30 2000-04-18 The Whitaker Corporation Heterojunction bipolar transistor having improved heat dissipation

Also Published As

Publication number Publication date
EP1110242A1 (de) 2001-06-27
EP1110242B1 (de) 2008-11-19
WO2000072379A1 (fr) 2000-11-30
FR2793953A1 (fr) 2000-11-24
US6559534B1 (en) 2003-05-06
JP2003500859A (ja) 2003-01-07
FR2793953B1 (fr) 2002-08-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition