DE60037255D1 - Verfahren zur Herstellung von Zwischenverbindungen in Halbleitervorrichtungen - Google Patents

Verfahren zur Herstellung von Zwischenverbindungen in Halbleitervorrichtungen

Info

Publication number
DE60037255D1
DE60037255D1 DE60037255T DE60037255T DE60037255D1 DE 60037255 D1 DE60037255 D1 DE 60037255D1 DE 60037255 T DE60037255 T DE 60037255T DE 60037255 T DE60037255 T DE 60037255T DE 60037255 D1 DE60037255 D1 DE 60037255D1
Authority
DE
Germany
Prior art keywords
interconnects
preparation
semiconductor devices
semiconductor
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60037255T
Other languages
English (en)
Inventor
Mario Napolitano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE60037255D1 publication Critical patent/DE60037255D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE60037255T 2000-12-11 2000-12-11 Verfahren zur Herstellung von Zwischenverbindungen in Halbleitervorrichtungen Expired - Lifetime DE60037255D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP00830810A EP1213758B1 (de) 2000-12-11 2000-12-11 Verfahren zur Herstellung von Zwischenverbindungen in Halbleitervorrichtungen

Publications (1)

Publication Number Publication Date
DE60037255D1 true DE60037255D1 (de) 2008-01-10

Family

ID=8175584

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60037255T Expired - Lifetime DE60037255D1 (de) 2000-12-11 2000-12-11 Verfahren zur Herstellung von Zwischenverbindungen in Halbleitervorrichtungen

Country Status (3)

Country Link
US (1) US6475898B2 (de)
EP (1) EP1213758B1 (de)
DE (1) DE60037255D1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6965165B2 (en) 1998-12-21 2005-11-15 Mou-Shiung Lin Top layers of metal for high performance IC's

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4624749A (en) * 1985-09-03 1986-11-25 Harris Corporation Electrodeposition of submicrometer metallic interconnect for integrated circuits
US5145571A (en) * 1990-08-03 1992-09-08 Bipolar Integrated Technology, Inc. Gold interconnect with sidewall-spacers
US5461003A (en) * 1994-05-27 1995-10-24 Texas Instruments Incorporated Multilevel interconnect structure with air gaps formed between metal leads
US5900668A (en) * 1995-11-30 1999-05-04 Advanced Micro Devices, Inc. Low capacitance interconnection
DE19716044C2 (de) * 1997-04-17 1999-04-08 Univ Dresden Tech Verfahren zum selektiven galvanischen Aufbringen von Lotdepots auf Leiterplatten
US6309956B1 (en) * 1997-09-30 2001-10-30 Intel Corporation Fabricating low K dielectric interconnect systems by using dummy structures to enhance process
US6100194A (en) * 1998-06-22 2000-08-08 Stmicroelectronics, Inc. Silver metallization by damascene method
US6187672B1 (en) * 1998-09-22 2001-02-13 Conexant Systems, Inc. Interconnect with low dielectric constant insulators for semiconductor integrated circuit manufacturing
US6251789B1 (en) * 1998-12-16 2001-06-26 Texas Instruments Incorporated Selective slurries for the formation of conductive structures
US6245658B1 (en) * 1999-02-18 2001-06-12 Advanced Micro Devices, Inc. Method of forming low dielectric semiconductor device with rigid, metal silicide lined interconnection system
US6218282B1 (en) * 1999-02-18 2001-04-17 Advanced Micro Devices, Inc. Method of forming low dielectric tungsten lined interconnection system
US6020261A (en) * 1999-06-01 2000-02-01 Motorola, Inc. Process for forming high aspect ratio circuit features

Also Published As

Publication number Publication date
EP1213758B1 (de) 2007-11-28
US6475898B2 (en) 2002-11-05
US20020090810A1 (en) 2002-07-11
EP1213758A1 (de) 2002-06-12

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Legal Events

Date Code Title Description
8332 No legal effect for de