DE60014161D1 - Feldemissionsvorrichtung mit einer passivierten oberflächenschicht - Google Patents

Feldemissionsvorrichtung mit einer passivierten oberflächenschicht

Info

Publication number
DE60014161D1
DE60014161D1 DE60014161T DE60014161T DE60014161D1 DE 60014161 D1 DE60014161 D1 DE 60014161D1 DE 60014161 T DE60014161 T DE 60014161T DE 60014161 T DE60014161 T DE 60014161T DE 60014161 D1 DE60014161 D1 DE 60014161D1
Authority
DE
Germany
Prior art keywords
surface layer
field emission
emission device
passivated surface
passivated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60014161T
Other languages
English (en)
Other versions
DE60014161T2 (de
Inventor
Alec Talin
D Moyer
A Dean
H Baker
A Voight
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE60014161D1 publication Critical patent/DE60014161D1/de
Application granted granted Critical
Publication of DE60014161T2 publication Critical patent/DE60014161T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/84—Traps for removing or diverting unwanted particles, e.g. negative ions, fringing electrons; Arrangements for velocity or mass selection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J21/00—Vacuum tubes
    • H01J21/02—Tubes with a single discharge path
    • H01J21/06—Tubes with a single discharge path having electrostatic control means only
    • H01J21/10—Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode
    • H01J21/105—Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode with microengineered cathode and control electrodes, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
DE60014161T 1999-12-10 2000-10-10 Feldemissionsvorrichtung mit einer passivierten oberflächenschicht Expired - Fee Related DE60014161T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/459,119 US6373174B1 (en) 1999-12-10 1999-12-10 Field emission device having a surface passivation layer
US459119 1999-12-10
PCT/US2000/027997 WO2001043156A1 (en) 1999-12-10 2000-10-10 Field emission device having surface passivation layer

Publications (2)

Publication Number Publication Date
DE60014161D1 true DE60014161D1 (de) 2004-10-28
DE60014161T2 DE60014161T2 (de) 2005-02-17

Family

ID=23823486

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60014161T Expired - Fee Related DE60014161T2 (de) 1999-12-10 2000-10-10 Feldemissionsvorrichtung mit einer passivierten oberflächenschicht

Country Status (6)

Country Link
US (1) US6373174B1 (de)
EP (1) EP1240658B1 (de)
AU (1) AU8007200A (de)
DE (1) DE60014161T2 (de)
TW (1) TW469464B (de)
WO (1) WO2001043156A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6369497B1 (en) * 1999-03-01 2002-04-09 Micron Technology, Inc. Method of fabricating row lines of a field emission array and forming pixel openings therethrough by employing two masks
US6469436B1 (en) * 2000-01-14 2002-10-22 Micron Technology, Inc. Radiation shielding for field emitters
US7622322B2 (en) * 2001-03-23 2009-11-24 Cornell Research Foundation, Inc. Method of forming an AlN coated heterojunction field effect transistor
JP2005085644A (ja) * 2003-09-10 2005-03-31 Hitachi Displays Ltd 画像表示装置
CN1707724A (zh) * 2004-06-07 2005-12-14 清华大学 场发射装置及其制造方法
CN1707725A (zh) * 2004-06-11 2005-12-14 清华大学 场发射装置及其制造方法
US20060113888A1 (en) * 2004-12-01 2006-06-01 Huai-Yuan Tseng Field emission display device with protection structure
US20080126216A1 (en) * 2006-11-24 2008-05-29 Mads Flensted-Jensen Systems and methods for operating a business that provides telephony services to an enterprise

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4041316A (en) 1974-09-20 1977-08-09 Hitachi, Ltd. Field emission electron gun with an evaporation source
FR2580864B1 (fr) 1984-12-18 1987-05-22 Thomson Csf Couche barriere au bombardement ionique pour tube a vide
JPH01220393A (ja) * 1988-02-26 1989-09-04 Hitachi Maxell Ltd 薄膜型エレクトロルミネセンス素子
US5090932A (en) * 1988-03-25 1992-02-25 Thomson-Csf Method for the fabrication of field emission type sources, and application thereof to the making of arrays of emitters
US5480748A (en) * 1992-10-21 1996-01-02 International Business Machines Corporation Protection of aluminum metallization against chemical attack during photoresist development
FR2702869B1 (fr) 1993-03-17 1995-04-21 Commissariat Energie Atomique Dispositif d'affichage à micropointes et procédé de fabrication de ce dispositif.
US5717285A (en) 1993-03-17 1998-02-10 Commissariat A L 'energie Atomique Microtip display device having a current limiting layer and a charge avoiding layer
US5502348A (en) 1993-12-20 1996-03-26 Motorola, Inc. Ballistic charge transport device with integral active contaminant absorption means
CA2137873C (en) 1993-12-27 2000-01-25 Hideaki Mitsutake Electron source and electron beam apparatus
US5442193A (en) 1994-02-22 1995-08-15 Motorola Microelectronic field emission device with breakdown inhibiting insulated gate electrode
EP0696042B1 (de) 1994-08-01 1999-12-01 Motorola, Inc. Bogen-Unterdrückungsvorrichtung für eine Feldemissionsvorrichtung
US5975975A (en) * 1994-09-16 1999-11-02 Micron Technology, Inc. Apparatus and method for stabilization of threshold voltage in field emission displays
US6124179A (en) * 1996-09-05 2000-09-26 Adamic, Jr.; Fred W. Inverted dielectric isolation process
US5585301A (en) * 1995-07-14 1996-12-17 Micron Display Technology, Inc. Method for forming high resistance resistors for limiting cathode current in field emission displays
EP0896730B1 (de) 1996-05-03 2003-03-26 Micron Technology, Inc. Abgeschirmte feldemissionsanzeigevorrichtung
US5668437A (en) 1996-05-14 1997-09-16 Micro Display Technology, Inc. Praseodymium-manganese oxide layer for use in field emission displays
US5719406A (en) 1996-10-08 1998-02-17 Motorola, Inc. Field emission device having a charge bleed-off barrier
US5929560A (en) 1996-10-31 1999-07-27 Motorola, Inc. Field emission display having an ion shield
US5760535A (en) 1996-10-31 1998-06-02 Motorola, Inc. Field emission device
KR20010032876A (ko) 1998-02-09 2001-04-25 어드밴스드 비젼 테크놀러지스 인코포레이티드 제한된 전자 필드 방출 소자 및 제작 공정
US6064149A (en) * 1998-02-23 2000-05-16 Micron Technology Inc. Field emission device with silicon-containing adhesion layer
US6108210A (en) * 1998-04-24 2000-08-22 Amerasia International Technology, Inc. Flip chip devices with flexible conductive adhesive
US6100195A (en) * 1998-12-28 2000-08-08 Chartered Semiconductor Manu. Ltd. Passivation of copper interconnect surfaces with a passivating metal layer

Also Published As

Publication number Publication date
WO2001043156A1 (en) 2001-06-14
TW469464B (en) 2001-12-21
US6373174B1 (en) 2002-04-16
DE60014161T2 (de) 2005-02-17
AU8007200A (en) 2001-06-18
EP1240658B1 (de) 2004-09-22
EP1240658A1 (de) 2002-09-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee