DE589126C - Process for the manufacture of electric valve plates by applying a layer of selenium to an electrode - Google Patents

Process for the manufacture of electric valve plates by applying a layer of selenium to an electrode

Info

Publication number
DE589126C
DE589126C DES88221D DES0088221D DE589126C DE 589126 C DE589126 C DE 589126C DE S88221 D DES88221 D DE S88221D DE S0088221 D DES0088221 D DE S0088221D DE 589126 C DE589126 C DE 589126C
Authority
DE
Germany
Prior art keywords
selenium
electrode
heating
applying
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DES88221D
Other languages
German (de)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sueddeutsche Apparate Fabrik GmbH
Original Assignee
Sueddeutsche Apparate Fabrik GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sueddeutsche Apparate Fabrik GmbH filed Critical Sueddeutsche Apparate Fabrik GmbH
Priority to DES88221D priority Critical patent/DE589126C/en
Application granted granted Critical
Publication of DE589126C publication Critical patent/DE589126C/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/103—Conversion of the selenium or tellurium to the conductive state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

Description

In der Patentschrift 501228 ist.ein Verfahren zur Herstellung elektrischer Ventile beschrieben, bei welchem Selen in amorphem Zustand auf eine Elektrode aufgetragen, dann mit dieser zusammen erhitzt und dann die zweite Elektrode auf die Selenschicht aufgelegt wird.In patent specification 501228 ist.ein method for the production of electric valves described in which selenium in amorphous Condition applied to an electrode, then heated together with this and then the second electrode is placed on the selenium layer.

Gegenstand der Erfindung ist eine weitere Ausbildung dieses. Verfahrens. Es hat sich gezeigt, daß es von großem Vorteil ist, zunächst auf eine niedrige Temperatur, insbesondere nur auf eine verhältnismäßig niedrige Temperatur wie 120 ° C zu erwärmen, bis die Überführung des amorphen Selens inThe subject of the invention is a further development of this. Procedure. It has shown that it is of great advantage to start at a low temperature, in particular only to be heated to a relatively low temperature such as 120 ° C, until the amorphous selenium is converted into

15' den kristallinischen Zustand erfolgt ist, und dann erst auf eine höhere Temperatur, z. B. 2oo° C, 'zu erhitzen.15 'the crystalline state has occurred, and only then to a higher temperature, e.g. B. 200 ° C, 'to be heated.

Bei verhältnismäßig niedriger Temperatur erfolgt die Umwandlung des amorphen Selens in das kristallinische viel langsamer als. bei höherer Temperatur. Während die Umwandlung bei einer hohen Temperatur von beispielsweise 2100 in wenigen Minuten erfolgt, kann die Umwandlung bei einer niedrigen Temperatur von beispielsweise ioo° Stunden beanspruchen.At a relatively low temperature, the conversion of amorphous selenium into crystalline selenium takes place much more slowly than. at higher temperature. While the conversion takes place at a high temperature of for example 210 0 in a few minutes, the conversion at a low temperature, for example ioo ° hours can claim.

Das langsam bei niedriger Temperatur entstandene kristallinische Selen hat eine günstigere Struktur und Oberflächenbeschaffenheit als das schnell kristallisierte. Diese vorteilhaftere Beschaffenheit macht sich auch bei nachfolgender hoher Erhitzung bemerkbar. Diese hohe Erhitzung auf eine Temperatur von mehr als 1750 ist notwendig, um eine große Leitfähigkeit in der Durchgangsrichtung des Ventils zu erzielen. Geht jedoch dieser Erhitzung eine Erwärmung auf niedrigere Temperatur voraus, so wird die Differenz im elektrischen Widerstände der Durchgangsrichtung und der Absperrichtung bedeutend vergrößert.The crystalline selenium slowly formed at low temperature has a more favorable structure and surface quality than the rapidly crystallized selenium. This more advantageous quality is also noticeable with subsequent high heating. This high heating to a temperature of more than 175 0 is necessary in order to achieve high conductivity in the direction of passage of the valve. However, if this heating is preceded by heating to a lower temperature, the difference in the electrical resistance of the direction of passage and the direction of shut-off is significantly increased.

Claims (3)

Patentansprüche:Patent claims: 1. Verfahren zur Herstellung von elekirischen Ventilplatten durch Auftragen einer Schicht aus amorphem Selen auf eine Elektrode und darauffolgende Erhitzung dieser vereinigten Teile, dadurch gekennzeichnet, daß die Erhitzung zuerst so lange auf eine niedrigere Temperatur erfolgt, bis die Umwandlung des amor- , phen Selens in kristallinisches erfolgt ist, und dann eine zweite Erhitzung auf eine höhere, eine große Leitfähigkeit erzeugende Temperatur vorgenommen wird.1. Process for the production of electrical Valve plates by applying a layer of amorphous selenium to an electrode and then heating these united parts, characterized in that the heating first so long to a lower temperature takes place until the amorphous, phenolic selenium is converted into crystalline selenium, and then a second heating to a higher one producing a high conductivity Temperature is made. 2. Verfahren nach Anspruch 1, dadurch ^ gekennzeichnet, daß die erste Erhitzung2. The method according to claim 1, characterized in that the first heating bei einer Temperatur von weniger als 1500 erfolgt.takes place at a temperature of less than 150 0 . 3. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß die zweite Erhitzung bei einer Temperatur von mehr als 1750C erfolgt.3. The method according to claim 1 or 2, characterized in that the second heating takes place at a temperature of more than 175 ° C.
DES88221D 1928-10-30 1928-10-31 Process for the manufacture of electric valve plates by applying a layer of selenium to an electrode Expired DE589126C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DES88221D DE589126C (en) 1928-10-30 1928-10-31 Process for the manufacture of electric valve plates by applying a layer of selenium to an electrode

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES0088221 1928-10-30
DES88221D DE589126C (en) 1928-10-30 1928-10-31 Process for the manufacture of electric valve plates by applying a layer of selenium to an electrode

Publications (1)

Publication Number Publication Date
DE589126C true DE589126C (en) 1933-12-02

Family

ID=25997473

Family Applications (1)

Application Number Title Priority Date Filing Date
DES88221D Expired DE589126C (en) 1928-10-30 1928-10-31 Process for the manufacture of electric valve plates by applying a layer of selenium to an electrode

Country Status (1)

Country Link
DE (1) DE589126C (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE742762C (en) * 1939-03-15 1943-12-10 Philips Patentverwaltung Method for manufacturing a barrier electrode system with a selenium electrode
DE754795C (en) * 1936-10-19 1952-10-13 Siemens Schuckertwerke A G Process for the manufacture of selenium rectifiers
DE919360C (en) * 1949-08-17 1954-10-21 Western Electric Co Selenium rectifier with tellurium and process for its manufacture
DE925847C (en) * 1949-10-31 1955-03-31 Licentia Gmbh Method of manufacturing selenium rectifiers
DE970124C (en) * 1944-01-17 1958-09-04 Siemens Ag Process for the manufacture of selenium rectifiers
DE971615C (en) * 1948-10-01 1959-02-26 Siemens Ag Process for the manufacture of dry selenium rectifiers

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE754795C (en) * 1936-10-19 1952-10-13 Siemens Schuckertwerke A G Process for the manufacture of selenium rectifiers
DE742762C (en) * 1939-03-15 1943-12-10 Philips Patentverwaltung Method for manufacturing a barrier electrode system with a selenium electrode
DE970124C (en) * 1944-01-17 1958-09-04 Siemens Ag Process for the manufacture of selenium rectifiers
DE971615C (en) * 1948-10-01 1959-02-26 Siemens Ag Process for the manufacture of dry selenium rectifiers
DE919360C (en) * 1949-08-17 1954-10-21 Western Electric Co Selenium rectifier with tellurium and process for its manufacture
DE925847C (en) * 1949-10-31 1955-03-31 Licentia Gmbh Method of manufacturing selenium rectifiers

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