DE523715C - Process for the production of plates for dry rectifiers - Google Patents

Process for the production of plates for dry rectifiers

Info

Publication number
DE523715C
DE523715C DES82383D DES0082383D DE523715C DE 523715 C DE523715 C DE 523715C DE S82383 D DES82383 D DE S82383D DE S0082383 D DES0082383 D DE S0082383D DE 523715 C DE523715 C DE 523715C
Authority
DE
Germany
Prior art keywords
plates
production
dry rectifiers
berlin
oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DES82383D
Other languages
German (de)
Inventor
Dr Emil Duhme
Dr Hans Gerdien
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Priority to DES82383D priority Critical patent/DE523715C/en
Application granted granted Critical
Publication of DE523715C publication Critical patent/DE523715C/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H01L21/161—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment
    • H01L21/164—Oxidation and subsequent heat treatment of the foundation plate

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Thermal Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Powder Metallurgy (AREA)
  • Details Of Valves (AREA)

Description

&ERLIN. GEDRUCKT IN DER REICHSDRl'CKEREt& ERLIN. PRINTED IN THE REICHSDRl'CKEREt

Claims (2)

Patentansprüche:Patent claims: 1. Verfahren zur Herstellung von Platten für Trockengleichrichter, bei denen eine auf einem Kupferkörper erzeugte Kupferoxydschicht den Sitz der Ventilwirkung bildet, dadurch gekennzeichnet, daß die zur Oxydation dienende Luft bei gegenüber Zimmertemperatur erhöhter, beispielsweise unter ioo° C liegender Temperatur mit Wasserdampf gesättigt wird.1. Process for the manufacture of plates for dry rectifiers in which a copper oxide layer produced on a copper body is the seat of the valve action forms, characterized in that the air used for oxidation at a higher than room temperature, For example, the temperature below 100 ° C is saturated with water vapor will. 2. Ausführungsform des Verfahrens nach Anspruch 1, dadurch gekennzeichnet, daß die zur Oxydation dienende Luft durch erwärmtes Wasser von etwa 60 bis 90 ° hindurchgeleitet wird.2. Embodiment of the method according to claim 1, characterized in that that the air used for the oxidation is passed through heated water of about 60 to 90 °. '■'■'■) Von dem Patentsucher sind als die Erfinder angegeben worden:'■' ■ '■) The patent seeker stated that the inventors were: Dr. Hans Gerdien in Berlin-Grunewald und Dr. Emil Diihme in Berlin-Siemensstadt.Dr. Hans Gerdien in Berlin-Grunewald and Dr. Emil Diihme in Berlin-Siemensstadt.
DES82383D 1927-10-24 1927-10-24 Process for the production of plates for dry rectifiers Expired DE523715C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DES82383D DE523715C (en) 1927-10-24 1927-10-24 Process for the production of plates for dry rectifiers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES82383D DE523715C (en) 1927-10-24 1927-10-24 Process for the production of plates for dry rectifiers

Publications (1)

Publication Number Publication Date
DE523715C true DE523715C (en) 1931-04-27

Family

ID=25997047

Family Applications (1)

Application Number Title Priority Date Filing Date
DES82383D Expired DE523715C (en) 1927-10-24 1927-10-24 Process for the production of plates for dry rectifiers

Country Status (1)

Country Link
DE (1) DE523715C (en)

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