DE502005003703D1 - Microscopic imaging system and method for emulating a high-aperture imaging system, in particular for mask inspection - Google Patents

Microscopic imaging system and method for emulating a high-aperture imaging system, in particular for mask inspection

Info

Publication number
DE502005003703D1
DE502005003703D1 DE502005003703T DE502005003703T DE502005003703D1 DE 502005003703 D1 DE502005003703 D1 DE 502005003703D1 DE 502005003703 T DE502005003703 T DE 502005003703T DE 502005003703 T DE502005003703 T DE 502005003703T DE 502005003703 D1 DE502005003703 D1 DE 502005003703D1
Authority
DE
Germany
Prior art keywords
imaging system
imaging
emulating
aperture
mask inspection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE502005003703T
Other languages
German (de)
Inventor
Wolfgang Harnisch
Karl-Heinz Schuster
Thomas Scheruebl
Joern Greif-Wuestenbecker
Norbert Rosenkranz
Michael Totzeck
Ulrich Stroessner
Heiko Feldmann
Toralf Gruner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMS GmbH
Original Assignee
Carl Zeiss SMS GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMS GmbH filed Critical Carl Zeiss SMS GmbH
Publication of DE502005003703D1 publication Critical patent/DE502005003703D1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • G02B21/0004—Microscopes specially adapted for specific applications
    • G02B21/0016—Technical microscopes, e.g. for inspection or measuring in industrial production processes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70666—Aerial image, i.e. measuring the image of the patterned exposure light at the image plane of the projection system
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S359/00—Optical: systems and elements
    • Y10S359/90—Methods

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Microscoopes, Condenser (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

A microscope imaging system for emulating high-aperture-type imaging systems has an imaging lens (2), a detector and an evaluating device. A beam splitter (3) with effective polarization fits optionally in an illuminating beam path for generating different polarization conditions for illuminating radiation and/or in an imaging beam path for different polarization parts of imaging radiation. An independent claim is also included for a method for emulating high-aperture-type imaging systems, especially for inspecting masks, with an imaging lens, a detector and an evaluating device.
DE502005003703T 2004-07-08 2005-07-02 Microscopic imaging system and method for emulating a high-aperture imaging system, in particular for mask inspection Active DE502005003703D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102004033603A DE102004033603A1 (en) 2004-07-08 2004-07-08 Microscopic imaging system and method for emulating a high-aperture imaging system, in particular for mask inspection

Publications (1)

Publication Number Publication Date
DE502005003703D1 true DE502005003703D1 (en) 2008-05-29

Family

ID=35169803

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102004033603A Withdrawn DE102004033603A1 (en) 2004-07-08 2004-07-08 Microscopic imaging system and method for emulating a high-aperture imaging system, in particular for mask inspection
DE502005003703T Active DE502005003703D1 (en) 2004-07-08 2005-07-02 Microscopic imaging system and method for emulating a high-aperture imaging system, in particular for mask inspection

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102004033603A Withdrawn DE102004033603A1 (en) 2004-07-08 2004-07-08 Microscopic imaging system and method for emulating a high-aperture imaging system, in particular for mask inspection

Country Status (5)

Country Link
US (2) US7286284B2 (en)
EP (1) EP1615062B1 (en)
JP (1) JP4690130B2 (en)
AT (1) ATE392639T1 (en)
DE (2) DE102004033603A1 (en)

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Publication number Priority date Publication date Assignee Title
JP2007520755A (en) * 2004-02-05 2007-07-26 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Mask inspection apparatus and method
DE102004033602A1 (en) * 2004-07-08 2006-02-16 Carl Zeiss Sms Gmbh Imaging system for emulation of high-aperture scanner systems
DE102005062237A1 (en) * 2005-12-22 2007-07-05 Carl Zeiss Jena Gmbh Process to evaluate the optical characteristics of a lens system as employed e.g. in stereolithography by comparison of two lens systems
US7791724B2 (en) 2006-06-13 2010-09-07 Asml Netherlands B.V. Characterization of transmission losses in an optical system
US7716627B1 (en) * 2006-09-28 2010-05-11 Guada, Inc. Solution-dependent regularization method for quantizing continuous-tone lithography masks
US7995832B2 (en) * 2007-01-11 2011-08-09 Kla-Tencor Corporation Photomask inspection and verification by lithography image reconstruction using imaging pupil filters
DE102007028195B4 (en) * 2007-05-30 2014-04-03 Vistec Semiconductor Systems Gmbh Element for the homogenization of the illumination with simultaneous adjustment of the degree of polarization
DE102007032626A1 (en) * 2007-07-11 2009-01-22 Vistec Semiconductor Systems Gmbh Device and method for improving the measurement accuracy in an optical CD measuring system
DE102008015631A1 (en) 2008-03-20 2009-09-24 Carl Zeiss Sms Gmbh Method and device for measuring masks for photolithography
DE102008019341B4 (en) 2008-04-15 2020-09-24 Carl Zeiss Smt Gmbh Method for the analysis of masks for photolithography
JP5299764B2 (en) * 2008-12-16 2013-09-25 株式会社ニコン Evaluation apparatus and evaluation method
DE102009038558A1 (en) * 2009-08-24 2011-03-10 Carl Zeiss Sms Gmbh Method for emulating a photolithographic process and mask inspection microscope for performing the method
JP2012048026A (en) * 2010-08-27 2012-03-08 Sony Corp Microscope and filter inserting method
DE102010047050B4 (en) * 2010-09-29 2021-09-16 Carl Zeiss Smt Gmbh Method for characterizing a structure on a mask and device for carrying out the method
DE102010063337B9 (en) * 2010-12-17 2020-05-07 Carl Zeiss Ag Process for mask inspection and process for emulating imaging properties
DE102013107976B4 (en) 2013-07-25 2016-07-28 Carl Zeiss Sms Gmbh Position determination of structures on a mask for microlithography
DE102015105613B4 (en) 2015-04-13 2023-08-31 Carl Zeiss Industrielle Messtechnik Gmbh Reflected light illumination for a variable working distance
DE102017115262B9 (en) 2017-07-07 2021-05-27 Carl Zeiss Smt Gmbh Method for characterizing a mask for microlithography
DE102018221647B3 (en) 2018-12-13 2020-06-04 Carl Zeiss Smt Gmbh Detection device for detecting a structure on a surface section of a lithography mask and device and method with such a detection device
DE102019123741A1 (en) 2019-09-04 2021-03-04 Carl Zeiss Smt Gmbh Device and method for characterizing a mask for microlithography
DE102020207566B4 (en) 2020-06-18 2023-02-16 Carl Zeiss Smt Gmbh Device and method for characterizing a mask for microlithography
CN111665019B (en) * 2020-06-28 2021-05-25 中国科学院长春光学精密机械与物理研究所 Electronics simulation test system of focusing mechanism
DE102020123615B9 (en) * 2020-09-10 2022-04-28 Carl Zeiss Smt Gmbh Method for characterizing a mask for microlithography
CN114879355A (en) * 2021-02-05 2022-08-09 中国科学院苏州纳米技术与纳米仿生研究所 Telescope structure and manufacturing method thereof
CN117741964B (en) * 2024-02-07 2024-05-03 泉州师范学院 Method for generating super-resolution diffraction-free transverse polarized light needle

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JPS5467443A (en) 1977-11-09 1979-05-30 Canon Inc Observer
JPS59100805A (en) 1982-12-01 1984-06-11 Canon Inc Device for observing object
KR960015001A (en) * 1994-10-07 1996-05-22 가나이 쓰토무 Method and apparatus for manufacturing a semiconductor substrate and for inspecting pattern defects on an inspected object
JPH09281401A (en) * 1996-04-16 1997-10-31 Nikon Corp Object inspecting instrument
US5890095A (en) * 1997-01-21 1999-03-30 Nichols Research Corporation System for receiving and enhancing electromagnetic radiation input signals
US6690469B1 (en) * 1998-09-18 2004-02-10 Hitachi, Ltd. Method and apparatus for observing and inspecting defects
IL130874A (en) * 1999-07-09 2002-12-01 Nova Measuring Instr Ltd System and method for measuring patterned structures
US6741356B1 (en) * 1999-09-20 2004-05-25 Olympus Corporation Method for detecting physical amount of object and optical apparatus using the same
JP2003262595A (en) * 2002-03-07 2003-09-19 Hitachi Electronics Eng Co Ltd Foreign-substance inspection apparatus
US6924893B2 (en) * 2002-05-13 2005-08-02 Marine Biological Laboratory Enhancing polarized light microscopy
JP3965325B2 (en) * 2002-05-29 2007-08-29 株式会社日立ハイテクノロジーズ Microstructure observation method and defect inspection apparatus
DE10304822A1 (en) * 2002-07-29 2004-02-12 Carl Zeiss Smt Ag Microlithography installation investigation device for determination of the effect of a microlithography UV light projecting installation on the polarization direction of UV radiation incident on it
JP2004061515A (en) 2002-07-29 2004-02-26 Cark Zeiss Smt Ag Method and device for determining influence onto polarization state by optical system, and analyzer
US7133119B1 (en) 2002-12-17 2006-11-07 Kla-Tencor Technologies Corp. Systems for simulating high NA and polarization effects in aerial images
US7023546B1 (en) * 2003-10-21 2006-04-04 The United States Of America As Represented By The Secretary Of The Army Real-time imaging spectropolarimeter based on an optical modulator

Also Published As

Publication number Publication date
EP1615062A3 (en) 2006-01-18
US7286284B2 (en) 2007-10-23
JP2006023307A (en) 2006-01-26
US20060012873A1 (en) 2006-01-19
JP4690130B2 (en) 2011-06-01
EP1615062A2 (en) 2006-01-11
ATE392639T1 (en) 2008-05-15
DE102004033603A1 (en) 2006-02-16
EP1615062B1 (en) 2008-04-16
USRE44216E1 (en) 2013-05-14

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