DE502004010664D1 - Voltage resistant MOS switch - Google Patents

Voltage resistant MOS switch

Info

Publication number
DE502004010664D1
DE502004010664D1 DE502004010664T DE502004010664T DE502004010664D1 DE 502004010664 D1 DE502004010664 D1 DE 502004010664D1 DE 502004010664 T DE502004010664 T DE 502004010664T DE 502004010664 T DE502004010664 T DE 502004010664T DE 502004010664 D1 DE502004010664 D1 DE 502004010664D1
Authority
DE
Germany
Prior art keywords
switching
mos switch
voltage resistant
resistant mos
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE502004010664T
Other languages
German (de)
Inventor
Ulrich Feese
Robert Kessler
Michael Wrana
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Biotronik SE and Co KG
Original Assignee
Biotronik SE and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Biotronik SE and Co KG filed Critical Biotronik SE and Co KG
Publication of DE502004010664D1 publication Critical patent/DE502004010664D1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N1/00—Electrotherapy; Circuits therefor
    • A61N1/18—Applying electric currents by contact electrodes
    • A61N1/32—Applying electric currents by contact electrodes alternating or intermittent currents
    • A61N1/38—Applying electric currents by contact electrodes alternating or intermittent currents for producing shock effects
    • A61N1/39—Heart defibrillators
    • A61N1/3906—Heart defibrillators characterised by the form of the shockwave
    • A61N1/3912—Output circuitry therefor, e.g. switches

Landscapes

  • Electronic Switches (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Electrotherapy Devices (AREA)

Abstract

The switch (101) has a MOS switching transistor (112) including a gate terminal and a source terminal that are short-circuited when the two transistors (11, 112) are in a non-conducting condition. A switching monitoring unit (116) produces a switching-through potential to prevent a predetermined potential difference at a protection output when the switching transistors are in the non-conducting condition. An independent claim is also included for a cardiac pacemaker or defibrillator having a stimulating unit.
DE502004010664T 2003-09-05 2004-08-09 Voltage resistant MOS switch Active DE502004010664D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10341940 2003-09-05
DE10358048A DE10358048A1 (en) 2003-09-05 2003-12-05 Metal-oxide semiconductor switch for cardiac pacemaker/defibrillator, has switching monitoring unit that produces switching-through potential at protection output when switching transistors are in non-conducting condition

Publications (1)

Publication Number Publication Date
DE502004010664D1 true DE502004010664D1 (en) 2010-03-11

Family

ID=34223544

Family Applications (2)

Application Number Title Priority Date Filing Date
DE10358048A Withdrawn DE10358048A1 (en) 2003-09-05 2003-12-05 Metal-oxide semiconductor switch for cardiac pacemaker/defibrillator, has switching monitoring unit that produces switching-through potential at protection output when switching transistors are in non-conducting condition
DE502004010664T Active DE502004010664D1 (en) 2003-09-05 2004-08-09 Voltage resistant MOS switch

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE10358048A Withdrawn DE10358048A1 (en) 2003-09-05 2003-12-05 Metal-oxide semiconductor switch for cardiac pacemaker/defibrillator, has switching monitoring unit that produces switching-through potential at protection output when switching transistors are in non-conducting condition

Country Status (2)

Country Link
AT (1) ATE456189T1 (en)
DE (2) DE10358048A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015122109A1 (en) 2015-12-17 2017-06-22 Tdk-Micronas Gmbh Voltage-resistant switch

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3534861C2 (en) * 1985-09-30 1994-04-28 Siemens Ag Semiconductor switch consisting of two MOS switching transistors connected in series with their source-drain paths
US4745923A (en) * 1985-11-20 1988-05-24 Intermedics, Inc. Protection apparatus for patient-implantable device
SE455146B (en) * 1986-10-28 1988-06-20 Ericsson Telefon Ab L M SPENNINGSSKYDDSKRETS

Also Published As

Publication number Publication date
DE10358048A1 (en) 2005-03-31
ATE456189T1 (en) 2010-02-15

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