DE438309C - Device for performing chemical reactions with the aid of high voltage currents using semiconductor electrodes - Google Patents

Device for performing chemical reactions with the aid of high voltage currents using semiconductor electrodes

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Publication number
DE438309C
DE438309C DEO12881D DEO0012881D DE438309C DE 438309 C DE438309 C DE 438309C DE O12881 D DEO12881 D DE O12881D DE O0012881 D DEO0012881 D DE O0012881D DE 438309 C DE438309 C DE 438309C
Authority
DE
Germany
Prior art keywords
aid
high voltage
chemical reactions
semiconductor
performing chemical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DEO12881D
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German (de)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ERICH OPPEN DIPL ING DR
Original Assignee
ERICH OPPEN DIPL ING DR
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ERICH OPPEN DIPL ING DR filed Critical ERICH OPPEN DIPL ING DR
Priority to DEO12881D priority Critical patent/DE438309C/en
Application granted granted Critical
Publication of DE438309C publication Critical patent/DE438309C/en
Expired legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018Glow discharge

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Description

M= Eigendcm
28 JMT. 192ϊ
M = proper cm
28 JMT. 192ϊ

AUSGEGEBEN AM 13. DEZEMBER 1926ISSUED ON DECEMBER 13, 1926

REICHSPATENTAMTREICH PATENT OFFICE

PATENTSCHRIFTPATENT LETTERING

KLASSE 12 h GRUPPE 4
(O I2SSi IVji 2h)
CLASS 12 h GROUP 4
(OI 2 SSi IVji 2h)

. Dr. Erich Oppen in Hannover.. Dr. Erich Oppen in Hanover.

Patentiert im Deutschen Reiche vom 12. März 1922 ab.Patented in the German Empire on March 12, 1922.

Es ist bekannt, durch elektrische Hochspannungsströme chemische Reaktionen auszuführen, indem die aufprallenden Elektronen die Reaktion einleiten oder die Moleküle zer-S trümmern, wobei neue Verbindungen entstehen. Bei einer dieser bekannten Einrichtungen werden Elektroden verwendet, die mit einem Halbleiter bekleidet sind; doch besteht der : Halbleiter hierbei aus einem flaumhaarigen ίο Stoff, bei dem die Halbleitfähigkeit nur auf ■■ Oberflächenleitung der Flaumhaare beruht und daher mit dem Feuchtigkeitsgehalt wechselt. Diesen Nachteil will die Erfindung dadurch beseitigen, daß die nicht sprühende Elektrode auf der dem elektrischen Felde zugewendeten Seite mit einem massiven Halbleiter bekleidet wird. Es kommen für die Erfindung alle massiven Halbleiter, wie z. B. Marmor, Schiefer, Beton, oder andere Mischst) körper in Frage.It is known to carry out chemical reactions using high-voltage electrical currents, in that the impacting electrons initiate the reaction or break up the molecules, creating new compounds. In one of these known devices electrodes are used which are clad with a semiconductor; However, the: Semiconductor consists of a downy ίο substance in which the semiconductor capability is only based on ■■ the surface conduction of the downy hair and therefore changes with the moisture content. The invention aims to eliminate this disadvantage in that the non-spraying electrode is clad with a solid semiconductor on the side facing the electrical field. There are all massive semiconductors such. B. marble, slate, concrete, or other mixed) bodies in question.

Abb. ι zeigt eine Ausführungsmöglichkeit der Erfindung. Ein metallisches Rohr 3 ist mit dem positiven Pol von beispielsweise )2o 000 Volt Gleichstrom verbunden, der in einem Lemb-Gleichrichter erzeugt sein kann. Das Rohr ist mit einer halbleitenden Schicht 2 ausgekleidet, z. B. mit Zement, angerührtem Marmormehl oder' einer sonstigen Betonmischung. Die negative Elektrizität wird durch einen Draht 1 durch Glimmentladung in das Gas geleitet. Das zu behandelnde Gas wird bei 4 zugeleitet und tritt bei 5 aus dem Apparat. Bei der Behandlung von Acetylengas sammelt sich bei 6 neugebildetes Schmieröl.Fig. Ι shows a possible embodiment of the invention. A metallic tube 3 is connected to the positive pole of, for example, 2o, 000 volts direct current, which can be generated in a Lemb rectifier. The pipe is lined with a semiconducting layer 2, e.g. B. with cement, mixed marble powder or 'another concrete mixture. The negative electricity is passed into the gas through a wire 1 by glow discharge. The gas to be treated is fed in at 4 and exits the apparatus at 5. When treating acetylene gas, newly formed lubricating oil collects at 6.

Abb. 2 zeigt eine andere Ausführungsmöglichkeit im Grundriß. Hier ist die Kastenform gewählt. 7 sind die halbleitenden Platten, " denen der Strom durch ein einbetoniertes Drahtnetz 8 zugeführt wird. 9 sind die Spriihorgane? die hier aus weitmaschigen, dünnen Drahtnetzen bestehen können, welche parallel in gleichem Abstande zu den Platten stehen, um eine gleichmäßige Besprühung der Platte zu erhalten.Fig. 2 shows another embodiment in plan. Here is the box shape chosen. 7 are the semiconducting plates, "which the current flows through a concrete Wire mesh 8 is supplied. 9 are the spray organs? the ones here made of wide-meshed, thin ones Wire nets can exist, which are parallel at the same distance to the plates, to get an even spray on the plate.

Dem Reaktionsgemisch können Hilfsstofl'e beigegeben werden, um die Leitfähigkeit des Gemisches passend zu erhalten oder katalytische Wirkungen zu erzielen. Man kann gleichzeitig hohe und niedrige Temperaturen anwenden, wobei diese Temperatur, durch besondere Heizung oder den Glimmstrom selbst erzeugt wird. Hierbei bietet der Halbleiter den Vorteil, daß er nicht so leicht wie GlasAuxiliaries can be added to the reaction mixture can be added to maintain the conductivity of the mixture appropriately or catalytic To achieve effects. You can use high and low temperatures at the same time, this temperature being due to special Heating or the glow current itself is generated. Here the semiconductor has the advantage that it is not as light as glass

ίο springt.ίο jumps.

Um ein Anbacken krustender Stoffe an den Elektroden zu verhüten oder das Reaktionsgemisch zwecks besserer Einwirkung des elektrischen Stromes umzurühren, können die Elek- · troden durch halbleitende Abstreifet gereinigt ! werden. . jIn order to prevent encrusting substances from sticking to the electrodes or the reaction mixture for the purpose of a better effect of the electrical By stirring the current, the electrodes can · be cleaned by means of semiconducting wipers! will. . j

Claims (4)

Patentansprüche: |Claims: | i. Einrichtung zur Ausführung von ehe- I mischen Reaktionen mit Hilfe von Hoch- ji. Device for the execution of marriage- I mix reactions with the help of high j Abb.Fig. Spannungsströmen unter Verwendung von Halbleiterelektroden, dadurch gekennzeich-„ net, daß die nicht sprühende Elektrode auf der dem elektrischen Felde zugewendeten Seite .mit einem massiven Halbleiter bekleidet ist.Voltage currents using semiconductor electrodes, characterized by " net that the non-spraying electrode on the facing the electrical field Side. Is clad with a massive semiconductor. 2. Verfahren unter Benutzung der Einrichtung nach Anspruch 1, dadurch gekennzeichnet, daß das Reaktionsgemisch durch Beifügung von Hilfsstoffen halbleitend gemacht wird.2. The method using the device according to claim 1, characterized in that that the reaction mixture is semiconducting by adding auxiliaries is made. 3. Verfahren unter Benutzung de«. Einrichtung nach Anspruch 1, gegebenenfalls in .Verbindung mit dem Verfahren nach Anspruch 2, dadurch gekennzeichnet, daß dem Reaktionsgemisch Katalysatoren beigemengt werden.3. Procedure using de «. Device according to claim 1, optionally in .Connection with the method according to claim 2, characterized in that Catalysts are added to the reaction mixture. 4.. Reinigungsvorrichtung für die Elektroden nach Anspruch 1, gekennzeichnet durch aus Halbleitern bestehende Abstreifer. 4 .. cleaning device for the electrodes according to claim 1, characterized by wipers made of semiconductors. Abb.Fig.
DEO12881D 1922-03-12 1922-03-12 Device for performing chemical reactions with the aid of high voltage currents using semiconductor electrodes Expired DE438309C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DEO12881D DE438309C (en) 1922-03-12 1922-03-12 Device for performing chemical reactions with the aid of high voltage currents using semiconductor electrodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEO12881D DE438309C (en) 1922-03-12 1922-03-12 Device for performing chemical reactions with the aid of high voltage currents using semiconductor electrodes

Publications (1)

Publication Number Publication Date
DE438309C true DE438309C (en) 1926-12-13

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Family Applications (1)

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DEO12881D Expired DE438309C (en) 1922-03-12 1922-03-12 Device for performing chemical reactions with the aid of high voltage currents using semiconductor electrodes

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DE (1) DE438309C (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1280222B (en) * 1962-04-06 1968-10-17 Omnical Ges Fuer Kessel Und Ap Precipitation electrode for electrostatic dust collector
DE4139474A1 (en) * 1990-11-30 1992-06-04 Toshiba Kawasaki Kk Electro-dust sepn. plant - comprises ioniser to charge dust particles, separator, electrostatic filter and meshed electrodes
DE19823748A1 (en) * 1998-05-27 1999-12-02 Siemens Ag Nitric oxide for medical applications generated by passage of gas mixture

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1280222B (en) * 1962-04-06 1968-10-17 Omnical Ges Fuer Kessel Und Ap Precipitation electrode for electrostatic dust collector
DE4139474A1 (en) * 1990-11-30 1992-06-04 Toshiba Kawasaki Kk Electro-dust sepn. plant - comprises ioniser to charge dust particles, separator, electrostatic filter and meshed electrodes
DE19823748A1 (en) * 1998-05-27 1999-12-02 Siemens Ag Nitric oxide for medical applications generated by passage of gas mixture
DE19823748C2 (en) * 1998-05-27 2000-05-18 Siemens Ag Method and device for the plasma chemical production of nitrogen monoxide
US6296827B1 (en) 1998-05-27 2001-10-02 Siemens Aktiengesellschaft Method and apparatus for plasma-chemical production of nitrogen monoxide
US6955790B2 (en) 1998-05-27 2005-10-18 Maquet Critical Care Ab Apparatus for plasma-chemical production of nitrogen monoxide

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