DE4345301C2 - Lead wire frames for use in manufacturing a LOC structure semiconductor device and method of manufacturing a LOC structure semiconductor device - Google Patents

Description

The invention relates to a lead wire frame for use in the manufacture of a semiconductor device device with LOC structure and to a method for producing a semiconductor device with LOC structure according to the preamble of the patent claim 1 or claim 2.  

Lead-on-chip structure of Fig. 21 is a sectional view of a conventional semiconductor device having a (hereinafter referred to LOC structure). Such a device is disclosed, for example, in Japanese laid-open specification JP 2-45969 A. Referring to FIG. 21, the apparatus comprises a carrier plate 1, a semiconductor chip 2 and a plurality of lead wires 3 which protrude on both sides of the semiconductor device 2 on this, wherein each of the lead wires 3 an internal lead wire portion 3 a and an outer to guidewire section 3 b having. Furthermore, the device has thin metal wires 5 , a casting resin 6 and a plurality of electrodes 4 , which are formed along the two sides on a first surface of the semiconductor component 2 .

An integrated circuit (not shown) and the electrodes 4 are formed on the upper first surface of the semiconductor device 2 by a photolithographic method or the like. The semiconductor device 2 is attached by bonding the first rear surface of the semiconductor device 2 with a conductive adhesive, such as a conductive resin, on the carrier plate 1 . The inner feed wire sections 3 a are each electrically connected to each other with the electrodes 4 on the semiconductor module 2 via thin metal wires 5 . The elements mentioned above are with the exception of the outer lead wire portions 3 b in such a way with the mold resin 6 sealed that only the outer Zufüh approximately wire sections 3 3 b of the lead wires on the outer side protrude. The outer supply wire sections 3 b of the supply wires 3 are brought into a desired shape, such as a straight shape, a knee-wing shape, a J-shape, etc.

In addition, the Japanese Disclosure discloses JP 2-45969 A a method for producing a such device. According to this procedure two frames used: a first frame has one outer frame and one inside the outer frame ordered carrier plate, wherein the carrier plate with the outer frame over floating lead wires connected is; a second frame has an outer Frame and a variety of lead wires on wel protrude inwards from the outer frame. The carrier plate Chen the first frame is down a distance pressed that is larger than the thickness of the semiconductor device is stone. After attaching the semiconductor device with the carrier plate of the first frame, the second frame connected to the first frame such that each of the lead wires over the semiconductor device with a predetermined constant distance between each Lead wire and the top surface of the device protrudes. Then the wires are bonded and the potting was carried out with resin. Unnecessary ab cuts the frame such as B. outer frame parts removed, creating a separate semiconductor device  receives. Finally, for every outside feed wire portion of the lead wires deforming performed, making a full semiconductor device receives.

In the conventional half as described above LOC structure conductor device becomes a semiconductor building block on a carrier plate by bonding with a conductive resin or the like attached. resin material However, lien have a moisture absorption that causes deterioration of the connection and / or whereby one in contact with the resin Can corrode semiconductor device or lead wires NEN. When mounting a semiconductor device on a Circuit board or the like becomes the semiconductor device placed on the circuit board and on closing the circuit board with the on it Chen module heated in a hot environment. Thereby the outer lead wire sections with the Circuit board soldered. The in the resin to the carrier plate Chenbonden absorbed moisture, which from the resin is vaporized during the soldering process, whereby the semiconductor device is separated from the carrier plate detach and / or cause cracks in the housing.

In the conventional manufacturing process in which the the above two frames are used lead ben the outer frames of the two frames together bound until the casting process is completed. consequently the outer frames act as an obstacle and arise Difficulty in handling. After connecting the two frames therefore occur during the following Processes often fail when transferring the frame and / or liquid used for the process penetrates between the outer frames, so that later  Leak the environment becomes contaminated. Especially in In the case of a manufacturing process step to electroplating covering the outer lead wire sections the semiconductor device, before disconnecting the Semiconductor device from the frame serious problems there due to the fact that the galvanic coating used solution between the two outer frames penetrates and exits later.

Another conventional method uses a individual frame for manufacturing a semiconductor device used with LOC structure, the single frame Carrier plate and integrated trained feeder has wires. With such a feed wire The frame is a carrier plate between the two Feeder protruding from the sides of the lead wire frame arranged around the wires, the carrier plate in extends at right angles to these lead wires. The However, the width of the carrier plate cannot exceed the Lead wire area can be enlarged. consequently are only available near carrier plates. From the Japanese laid-open patent publication JP 64-69041 A is a Zu guide wire frame with a carrier plate known, where partially large areas over the area of the Zu protruding guide wires. In this case, however the supply wires are shortened lengthways because otherwise they will be deformed. As a result, will be longer thin metal wires needed for wire bonding and / or die There are locations for the electrodes on the semiconductor module limited.

If a semiconductor device is manufactured, which a lead wire frame with a carrier plate as well as integrally formed feed wires, the support plate has to be adjusted according to the thickness  of the semiconductor device corresponding amount reduced be, with the semiconductor device between the feed rungswires and the carrier plate is inserted and is then connected to the carrier plate. he however, the carrier plate extends at a right angle to the direction in which the lead wire frame is at Manufacturing process of the semiconductor device is moved, so the semiconductor device must be between the supply wires and the sunken carrier plate in the same Direction inserted as the feed wire frame movement become. This insertion process is difficult to do which is why complicated and error-prone operations are needed. In addition, after inserting the Semiconductor component for fastening the semiconductor structure stones on the carrier plate with hard solder and error prone operations are required.  

JP 3-3354 A (abstract) discloses one Semiconductor device with a chip enclosing Sheathing outstanding lead wires. Here are the Lead wires designed to be on the same Protrude level of the bottom surface of the casing and parallel are aligned to this so as to ensure a safe installation to enable a surface.

Making a component to attach a larger one Number of electrical parts or components per Unit of length is disclosed in JP 63-306647 A (abstract). The semiconductor chip to be attached to this conventional method between two overlapping End positions of two connection plates inserted, with these through Bonded and sealed with a resin.

However, these procedures are complicated to carry out difficult and the results could be unreliable.

The invention is therefore based on the object solve the above problems and a more reliable Method for manufacturing a semiconductor device with LOC Creating structure. In addition, the invention is the Task based on using a lead wire frame in the manufacture of a semiconductor device with LOC Structure in which lead wires run over a Extend semiconductor device to create.

According to the invention, this object is achieved by a Feed wire frame according to claim 1, and by a Method for manufacturing a semiconductor device with LOC Structure according to claim 2.  

According to a first aspect of the invention created a lead wire frame which an inward from an outer frame of the feeder wire frame projecting carrier plate and of both Sides of the outer frame of the lead wire frame in Feeder extending in the direction of the carrier plate tion wires, wherein the carrier plate and the Lead wires are integrally formed. With this Feed wire frame is the carrier plate with the Sections of the outer frame joined on both sides the, with both sections in the same direction perpendicular to the feed wire frame level conditions are that they form U-shaped sections, whereby the carrier plate opposite the outer frame and the Lead wires is lowered. The U-shaped sections are large enough to pass through a semiconductor device insert one of these U-shaped sections.

According to a second aspect of the invention a method of manufacturing a semiconductor created device in which a feed wire frame according to the first aspect of the invention. The lead wire frame faces the direction of the lead wire frame moving direction  right-angled beam platelets, as well as lead wires, which are in Direction of the carrier plate from both sides of the outer Ren frame of the lead wire frame, wherein the carrier plate and the lead wires integrated are trained. In this procedure, the Ab cuts on both sides of the outer frame on which the carrier plate is connected to the outer frame, in the same direction perpendicular to the frame plane bent such that U-shaped sections are formed those that are big enough to hold a semiconductor device insert through one of these U-shaped sections. A semiconductor device is subsequently replaced by one of the U-för formed in both sides of the outer frame sections inserted, the U-shaped Ab cuts on the side of the lead wire motion path lie.  

Regarding a lead wire frame and a ver drive to manufacture a semiconductor device that used this lead wire frame, according to the first and second aspect of the invention finds an addition guidewire frame use, the one to the direction of Feed wire frame movement, during manufacturing process of a semiconductor device, rectangular extending carrier plate has. A semiconductor construction stone can be seen in both sides of the outer frame trained U-shaped sections between the carrier platelet and the lead wires are inserted where at the U-shaped sections on the side of the feeder wire movement paths are attached. This will the chip insertion process is simplified and its implementation facilitated. In addition, the feed wire frame according to the first aspect of the invention, regardless of the direction in which the carrier plate extends, the carrier plate from the lead wires by Bie sections on either side of the outer frame be lowered on the carrier plate with the outer ren frame is connected U-shaped. This leads to that extend from one side and the other the lead wires closer together. That’s it possible that the lead wires closer to the Zentralbe range of the semiconductor device come to rest.

The invention is described below with reference to Ausführungsbei play with reference to the drawing, wherein FIGS. 1A to 18 and 21 do not represent embodiments according to the Invention.

Show it:

Fig. 1A is a perspective view of a Halbleitervor device according to a first example;

Fig. 1B is a side view and partially sectional view of a semiconductor device of FIG. 1A;

Fig. 2 is a perspective view of the structure of a lead wire frame according to a second and third example;

Figs. 3A to 3C are top views of a semiconductor device to explain successive manufacturing steps according to the second example;

Figs. 4A to 4D are top views of a semiconductor device for explaining further successive production steps after the step according to FIG. 30;

FIG. 5 is a flowchart showing a method for manufacturing a semiconductor device according to FIGS. 3A to 3C and Figs. 4A to 4D;

Fig. 6 is a side view of two to explain a first comparative example of a method of connecting frame according to the second example;

Fig. 7 is a side view showing a second comparative example of a method for connecting two frames in accordance with the second example;

Fig. 8 is a side view showing a third comparative example of a method for connecting two frames in accordance with the second example;

Figs. 9A and 9B are perspective views for explanation a fourth comparative example of a method for Connecting two frames according to the second example;

Figs. 10A to 10D are perspective views for explaining tion of a fifth comparative example for a method for connecting two frames according to the second example;

Figure 11 is a plan view of two frames, as used in the second example, the two frames are connected to each other.

Figs. 12A and 12B are side views for explaining a Example of a method in which a frame according to the  Manufacturing process according to the second example is cut;

FIG. 13 is a plan view of an embodiment of a lead wire-frame according to the fourth and fifth example;

FIG. 14 shows a sectional view of the feed wire frame according to FIG. 13 along a section in the direction XIV; FIG.

FIG. 15 is a sectional view of an embodiment of a semiconductor device manufactured by the manufacturing method according to the fifth example;

FIG. 16 is a sectional view of the semiconductor device of FIG. 15 along the section line XVI-XVI;

Fig. 17 is a plan view of another embodiment of a lead wire frame according to the fourth and fifth examples;

FIG. 18 is a perspective view of another example of a lead wire from the guide frame according to the fourth example;

FIG. 19 is a plan view of an embodiment of a lead wire-frame according to a first and second aspect of the invention;

Fig. 20 is a flowchart of a method for manufacturing a semiconductor device according to the second aspect of the invention; and

Fig. 21 is a sectional view of a comparable herkömm union semiconductor device.

First example

Figs. 1A and 1B show an exemplary embodiment of a semiconductor device with a LOC structure according to a first example, FIG. 1A showing the inner structure in a perspective top view and FIG. 1B showing a side view and partial sectional view of the device. According to these figures the device comprises a carrier plate 1, a semiconductor device 2, Zufüh approximately wires 3 having an inner lead wire portion 3 a and an outer lead wire portion 3 b, Elek trodes 4, thin metal wires 5 and a casting resin 6 to form a housing. This device has substantially the same structure as a conventional semiconductor device except that the electrodes 4 are formed along a line in a central area of the semiconductor device.

Furthermore, common supply wires 3 c are provided, which are used mainly for the power supply or as ground supply wires, the common feed wires 3 c extending in the longitudinal direction over the central area of the semiconductor module 2 . Furthermore, a hard solder 7 , such as, for example, a normal solder, is provided for bonding the semiconductor chip 2 to the substrate 1 . The brazing alloy 7 has no moisture absorption, as a result of which the corrosion of the semiconductor module 2 by moisture is prevented. Even if the entire device when attaching the fully continuous semiconductor device by soldering the outer lead wire sections 3 is fixed by heating b circuit board (not shown) on one, may be caused by the moisture, no cracks. Since the brazing material 7 is arranged for connecting the semiconductor device 2 with the carrier plate in an interior covered by the mold resin 6 portion of this lot is hard-material 7 as compared to the outer portions heated less strongly. Therefore, the brazing material 7 does not melt during the soldering process. If necessary, the brazing material 7 can be selected such that its melting point is sufficiently high and is not melted by the soldering process when the semiconductor device is mounted on a circuit board. In the case of a normal solder, this can be achieved by selecting a suitable mixing ratio between tin and lead.

Second and third examples

Fig. 2 shows a feed wire frame with two frames according to a second and third example. The second example relates to a method of manufacturing a semiconductor device using a lead frame, and the third example relates to the lead frame. Referring to FIG. 2, a lead wire-frame 80 includes a frame 81 for the lead wires and a frame 82 for the carrier plate on. The frames 81 and 82 are made from a metal sheet by cutting, such as stamping or etching. The frame 81 for the feed wires has common feed wires 3 c and a plurality of feed wires 3 which extend from both sides of the outer frame 81 a to the inside. Each of the lead wires 3 has an inner lead wire section 3 a and an outer lead wire section 3 b. The frame 81 for the guide wires has frame cutting slots 18 which are formed in the outer frame 81 a. The frame cutting slots 18 will be explained in detail later. The frame 82 for the carrier plate has a carrier plate 1 , wherein both sides of the carrier plate 1 are connected to the inner portions of an outer frame 82 a via floating feed wires 82 b. The carrier plate is similar to a so that the semiconductor assembly can be mounted very stable stone 2 on the support plate 1 is formed to be fastened semiconductor device 2. The semiconductor device 2 Fig. 2 is bonded and with a brazing material 7 to the carrier plate 1 is fixed to the invention. In the frame 82 for the carrier platelets, the floating lead wires are bent downward at the sides by an amount corresponding to the thickness of the semiconductor chip 2 , so that the carrier platelet 1 is lowered with respect to the surrounding outer frame men 82 a. By extending when the frames 81 and 82 are connected together, the ge common supply wires 3 c and the inner feed wire portion 3 a of each lead wire 3 paral lel to the first surface of the semiconductor device 2 with a predetermined constant spacing between the lead wires and the surface of the semiconductor block 2 is observed. The method of connecting the lead wire frame 81 and the carrier plate frame 82 will be described later.

In conventional methods, a carrier plate is formed between the common feed wires 3 c or between in neren feed wire sections 3 a, which extend from the sides of an outer frame 81 a of the frame 81 for the feed wires, integrated. With such a frame, however, the width of the carrier plate 1 cannot be widened beyond the area of the feed wires. In contrast, in this example in which two frames are connected to each other, that is, a frame 81 for the lead wires and a frame 82 for the lead plate, the shape of the lead plate 1 can be designed regardless of the shape of the lead wires, thereby increasing the width of the carrier plate 1 can be widened sufficiently. Furthermore, a semiconductor device 2 can be bonded to the carrier plate in various ways; after the two frames 81 and 82 are connected to one another, the semiconductor component 2 is inserted between the carrier plate and the inner lead wire sections 3 a and fastened on the carrier plate 1 .

Figs. 3A to 3C and Figs. 4A to 4D show a method of manufacturing a semiconductor device according to the second example. Further, FIG. 5 shows a flow chart for this manufacturing method. The successive steps of this method are described below. First, a semiconductor device 2 is attached to a carrier plate 1 of a frame 82 for the carrier plate 1 according to FIG. 3A, using a brazing material 7 , such as a normal solder, which has no moisture absorption (see FIG. 1 and 2). The state according to FIG. 3B (carrier wafer bond step S1) thus occurs. According to Fig. 3C, a frame for the lead wires with frame-cutting slits 18 to the frame 82 for the carrier plate, which is located in the in state of Fig. 3B 4A is now set and the frame of Fig. With a later-described Method (for example spot welding) connected to each other (connection step S2).

Subsequently, an unnecessary outer frame 82 a of the frame 82 for the carrier plate is cut off, for example using a cutting stamping method. The carrier plate 1 with the semiconductor component 2 thus remains on both sides in connection with the connecting sections 17 (outer frame cutting step S3). The resulting combined frames can then be treated as a one-piece lead wire frame and the subsequent manufacturing processes can be easily performed. In addition, the accumulation or leakage of solution used in galvanic coating can be prevented in the later process of external coating. Subsequently, the formed along the center line of the semiconductor device 2 electrodes 4 (s. Fig. 1) via thin metal wires 5 to the inner lead wire portions 3 a and / or above the semiconductor chip 2 extending in common seed supply wires 3 c electric ver together tied (wire -Bond step S4).

After the wire bonding, the frame is placed in a mold (not shown), and then injected according to FIG. 4D to seal the main chip comprising the semiconductor chip 2 with casting resin 6 (casting step S5). In this step, the potting is carried out such that the outer lead wire sections 3 b are not covered by the resin, but protrude outwards. The following steps are not shown in the figures, ie the outer lead wire sections 3 b are galvanically coated (outer galvanic coating step S6), then the semiconductor device with the outer lead wire sections 3 b is cut off from the frame and for separating the outer lead wire sections 3 b cut the connecting elements into individual feed wire sections. Furthermore, the separated outer lead wire portions 3 b are brought into a desired shape in the lead wire deforming step S7, thereby obtaining a full semiconductor device.

The frame cutting slots 18 may be formed in either of the two frames. The shape of the slots is not limited to the shape shown in the figures. Instead of punching, laser cutting or the like can also be used to cut the outer frame portions of the frame 82 for the carrier plate. In this particular example according to the fifth example, the semiconductor device is bonded to the carrier plate with a brazing material 7 , however other materials can also be used in this and other examples and in the following aspects of the invention.

According to the second example, some comparative examples for a connection method of a frame 81 for the feed wires with a frame 82 for the carrier plate are described below. Fig. 6 shows a first comparative examples of a method for connecting a frame 81 for the feed wires to a frame 82 for the carrier plate. Referring to FIG. 6, the connecting means Wi derstandsschweißens is carried out in this Comparative Examples, which welding process the point is assigned. Fig. 6 shows the welding electrode 9, an electrode holding pin 10 a for holding the upper welding electrode 9 and an electrode holder base plate 10 b for holding the lower welding electrode 9. A frame 81 for the lead wires and a frame 82 for the carrier plate are placed between the upper and lower welding electrodes and pressed together by a movement of the electrode holding pin 10 a in the direction of arrow A according to FIG. 6. When applying a current to the upper and lower welding electrodes 9 , the frames 81 and 82 are spot welded. Resistance welding has the advantages that strong connecting forces can be obtained with slight deformations on the surface of the welded section. Another advantage of resistance welding is that no welding dust is generated, which is why the semiconductor device 2 be contaminated particularly little. Spot welding can also be carried out by laser welding.

Fig. 7 shows a second comparative example of a method for connecting a frame 81 for the feed wires with a frame 82 for the carrier plate. Referring to FIG. 7, the connection in this example the comparison is performed by means of an adhesive tape. Fig. 7 shows an adhesive tape 11 , a Preßbefestigungs-Before device 12 and a frame support base plate thirteenth An adhesive tape 11 is placed between the frame 81 for the feed wires and the frame 82 for the carrier plate, the frames 81 and 82 with the adhesive tape 11 being placed on the frame holding base plate 13 and pressed by the press fastener 12 that both frames 81 and 82 are connected by the adhesive tape 11 . The advantage of this process over the laser welding process is that a high throughput can be achieved. The advantage over the spot welding process is that no additional equipment is required.

Fig. 8 shows a third comparative example of a method for connecting a frame 81 for the feed wires with a frame 82 for the carrier plate. In this comparative example according to FIG. 8, the connection, similar to that in FIG. 7, is produced using an adhesive tape, but in this case the adhesive tape 11 consists of an adhesive base tape 11 a and thermoplastic adhesives 11 b, which are on both Surfaces are piled up. In this comparative example, each surface of the adhesive tape 11 b via an intermediate layer material of the thermoplastic adhesive 11 connected to the frame 81 or the 82nd Consequently, the thermoplastic adhesive 11 b, which absorb the stresses arising from the different thermal expansions between the two frames 81 and 82 , even if there is a thermal past during the process steps, such as for example wire bonding and potting (sealing) , As a result, the thermal deformation of the frame can be kept as low as possible. Although in the connection method according to Figs. 7 and 8, an adhesive tape was used, the connection is carried out on the sections which are outside the area to be cast with the casting resin 6 . Accordingly, even if the adhesive tape has moisture absorption, no problems arise.

Figs. 9A and 9B show a fourth comparative example of a method of connecting a frame 81 for the lead wires to a frame 82 for the carrier plate. In this comparative example, the connection is made using a rivet. Figs. 9A and 9B show holes 14 and a rivet 15 formed in both frames 81 and 82 . According to FIG. 9A, the frames 81 and 82 are superimposed and a rivet 15 is pushed through the holes 14 . Then the upper end of the rivet 15 is pressed and pressed apart, whereby the two frame men 81 and 82 are connected to each other. The shape of the rivet 15 and the holes 14 are not limited to the shape shown in the figure. Instead of the rivet 15 , any other element with the same function can be used.

Figs. 10A to 10D show a fifth comparative example of a method for connecting a frame 81 for the lead wires to a frame 82 for the carrier plate. In this comparative example, the connection is made by caulking. Figs. 10A to 10D show a protrusion 16 formed in the frame 82 and a hole 14 formed in the frame 81 , the protrusion 16 being fitted in the hole 14 . First, according to Fig. 10A formed in the frame 82 by etching or punching a projection. The protrusion 16 is then bent upward as shown in FIG. 10B. A protrusion 16 ent speaking hole 14 is formed by etching or punching in Rah 81 men formed. The two frames 81 and 82 are superimposed in such a way that the projection 16 is inserted and fitted in the hole 14 . Thereafter, the projection 16 is Fig invention. 10D bent back. The frames 81 and 82 are thus fitted and fastened by means of caulking. The shapes of the protrusion 16 and the hole 14 and the methods for forming them are not limited to the above-mentioned shapes and methods.

Figs. 11, 12A and 12B show a comparative example egg nes method for cutting unneeded portions of an outer frame 82a of the frame 82 slide for the carrier, of the wires to a frame 81 for the feed by means of a was attached to the above methods. FIG. 11 shows a frame 82 for the carrier plate with a semiconductor component fastened on the carrier plate; the frame 82 for the carrier plate is connected on the underside to the frame 81 for the feed wires. Fig. 11 shows Verbindungsab sections 17 (for example spot welding sections) on which the frames are connected to one another and slots formed in the frame 81 for the lead wires frame cutting.

The frame cutting slots 18 formed in the frame 81 for the lead wires offer a device for cutting through the frame 82 for the carrier plate, with the exception of a carrier plate 2 (which has floating lead wires) and on the connecting sections 17 on both sides with the frame 81 connected is. After cutting, the frame 81 with the carrier plate 1 and the semiconductor module 2 can be treated like a one-piece frame. This can effectively prevent problems in the subsequent processes, such as incorrect movement of the frames and the accumulation or leakage of solvents, which often occur with two combined frames.

Figs. 12A and 12B show this cutting method, where 19 denotes a lower metal fastening device, 20 a frame holder and 21 a cutting element. According to Fig. 12A of the frame 81 for the lead wires and the frame is 82 17 are connected to each other for the support plates, which connection portions on the Ver placed on the lower metal attachment device 19 and held by the frame holder 20. The cutting element 21 is inserted into the frame cutting slots 18 to a position where the cutting element 21 is stopped by the lower metal fastening device 19 at an appropriate predetermined distance. The outer frame of the frame 82 for the carrier plate is thus cut off from the frame 81 for the feed wires.

As described above, in a known Ver drive to manufacture a semiconductor device LOC structure using a one-piece lead wire frame integrally formed lead wires and carrier plate used. Such a frame can by means of Stamping or etching can be generated from a metal sheet. Although this method has the advantage that less  Process steps for manufacturing a semiconductor device compared to two combined frames Disadvantages are particularly evident in the fact that is difficult to determine the width of a carrier plate over the Feed wire area to enlarge and that a Semiconductor device not stable on the carrier plate can be attached. To solve the problems mentioned is below, according to a fourth example a lead wire frame for use in a half LOC structure conductor device and a method according to the fifth example of production a semiconductor device with LOC structure, under Ver using such a feed wire frame, be wrote.

Fourth and fifth example

Figs. 13 and 14 show an example of a feed wire frame according to the fourth and fifth examples, wherein FIG. 13 is a plan view and FIG. 14 is a side view in the direction of arrow XIV in FIG. 13. Referring to FIG. 13 of this lead-in wire-frame has 83 a plurality of feed wires 3 within an outer frame 83 a and a carrier plate 100 which th substantially perpendicular to the Zuführungsdräh 3 extends. The feed wires 3 and the carrier plate 100 are integrally formed. The carrier plate 100 has a conventional main plate 101 , which extends along a central region of a semiconductor component 2 in its entire length, and also secondary plates 102 , which extend on both sides of the main plate 101 in a cross shape. This essentially increases the width of the carrier plate. Each side plate 102 lies in the same plane as the principal plate 101 and extending at right angles to the main plate substantially one hundred and first In addition, each sub-plate 102 extends between adjacent lead wires, which protrude inward from a plurality of lead wires 3 from both sides of the outer frame 83 a at a predetermined distance. Due to this structure, the carrier plate 100 can extend beyond the feed wire region without changing the location, the shape and / or the length of the feed wires 3 . Referring to FIG. 14, the carrier plate is recessed with respect to the outer frame 100 83 a and a semiconductor device is mounted, for example, brazing to the lowered Trä gerplättchen 100 by bonding.

Figs. 15 and 16 show a semiconductor device as manufactured by a method according to the fifth example using a lead wire frame shown in FIG. 13. Fig. 15 shows a sectional view along a lead wire 3 of the semiconductor device. Fig. 16 is a sectional view taken along the line XVI-XVI. The basic structure corresponds to the semiconductor device according to the first example according to FIG. 1, which is why the same or similar parts are given the same reference numerals. The description of these same or similar parts is not repeated here. In the semiconductor device according to Figs. 15 and 16, only supply wires 3 are provided, which extend over the semiconductor module 2 and ben no common supply wires 3 ha. The flow chart representing this manufacturing method is the same as the flow chart according to the second example of FIG. 5, except that steps S2 and S3 are omitted.

The method for manufacturing a semiconductor device according to FIGS. 15 and 16 is described below. As described above in connection with FIG. 14, a semiconductor module 2 is inserted between the outer frame 83 a of the feed wire frame 83 and the lowered carrier plate 100 . The semiconductor component 2 is then fastened on the carrier plate 100 using, for example, a hard solder 7 (carrier plate bond step S1). Referring to FIG. 15, each of the feed wires is 3 without contact above the surface of the semiconductor package. 2

The inner supply wire sections 3 a, the supply wires 2 extending over the semiconductor module 2 are each connected with thin metal wires 5 using an ultrasonic thermocompression wire bonding method (wire bonding step S4) to the electrodes 4 on the semiconductor module 2 . In this step, when the thin metal wire 5 is pressed onto an electrode 4 of the semiconductor module 2 , mechanical forces are supplied to it. Due to the high stability of the semiconductor component 2 fastened on the carrier plate 100 , however, it is ensured that the bonding can be carried out easily and without problems. During the wire bonding process, the carrier plate is heated to increase the temperature of the semiconductor device 2 and to simplify the wire bonding. Since the carrier plate 100 has a larger area in comparison with the conventional feed wire frame with integrated feed wires and carrier plates, better thermal conductivity can be achieved from the carrier plate 100 to the semiconductor component 2 . As a result, the temperature of the semiconductor module 2 can be raised more effectively.

Then the semiconductor chip 2 , the carrier plate 100 , the inner lead wire sections 3 a and the thin metal wires 5 with, for example, epoxy resin as a casting resin 6 edged (casting step S5). Each outer lead wire section 3 b, which protrudes outward from the casting resin 6 , is electroplated (outer electroplating step S6). Finally, a finished semiconductor device from the outer frame 83 a of the lead wire frame 83 separated and each, extending from the molding resin 6 outer feed wire portion 3 b of the semiconductor device is brought into a ge desired shape (lead wire-deformation step S7). Thus, the complete semiconductor device is obtained. A lead wire frame 83 used in the current production has a plurality of unit elements as shown in FIG. 13, the unit elements being successively connected to each other and a plurality of semiconductor devices can be manufactured simultaneously, similarly to the second example. The external electroplating does not have to be carried out in this special manufacturing process or in any of the production processes mentioned below if it is unnecessary.

In contrast to semiconductor devices produced by means of conventional one-piece frames, the fully permanent semiconductor device according to FIGS. 15 and 16, on the back of the semiconductor module 2, a smaller area existing in direct contact with the casting resin 6 , as a result of which better adhesion is achieved between the back surface of the semiconductor module 2 and the casting resin 6 and detachment is prevented.

In this particular comparative example, the carrier plate 100 is cruciform. The secondary plate 102 can, however, also be formed only on one side of the main plate 101 of the carrier plate 100 . In contrast, the lead wire frame 83 shown in FIG. 17 has a plurality of sub-plates 102 on each side of the main plate 101 of the carrier plate 100 , which protrude to each side. Each sub-die 102 of the lead wire frame 83 extends between adjacent lead wires 3 . When using such a feed wire frame 83 with a carrier plate 100 , which has a larger number of Ne benplättchen 102 , the stability of the semiconductor device and the efficiency of the thermal conductivity can be improved during a wire bonding process step. In addition, such a complete semiconductor device has better adhesion between the back surface of the semiconductor device and the casting resin.

According to the parts of the description of FIGS. 13 and 17, in the feed wire frame according to the fourth example, a carrier plate 100 extends in a direction perpendicular to the longitudinal direction of a feed wire frame 83 (the actual feed wire frame has a plurality of unit elements according to these figures, the unit elements in FIG hori zontal direction of these figures are connected). Therefore, for inserting a semiconductor device between a carrier plate 100 and an outer frame 83 a, the semiconductor device 2 is inserted in the longitudinal direction of the lead wire frame 83 (by the arrow XIV, direction shown in Fig. 13). In production lines, the lead wire frames are typically moved in the longitudinal direction of the lead wire frame. This means that due to the fact that the semiconductor devices in the same direction as the feed wire frame movement path in the case of the feed wire frame 83 shown in Figs. 13 and 17 is inserted, difficulties in the module insertion process can occur.

Because of this, according to the fourth example, as shown in Fig. 18, another comparative example is provided. When lead wire frame 83 according to Fig. 18 extends a main plate 101 of a carrier plate 100 in the longitudinal direction of the lead wire frame 83, ie in the same direction in which the lead wire frame 83 is moved, and the the lead wire 3 extending perpendicular to the ser Direction. Both end portions of the carrier plate 100 are bent such that the carrier plate 100 is lowered with respect to the outer frame 83 a. As a result, a semiconductor device can be inserted from a lateral position of the feed wire frame movement path, ie in a direction perpendicular to the feed wire frame movement path according to arrow B. In this way, a simple module insertion process is obtained. Fig. 18 shows cross-connecting links 3 d for connecting the feed wires 3 , which were not shown in the figures of the above-mentioned exemplary embodiments. These cross-links 3 d are cut in a feed wire cutting and molding process, in which the semiconductor device is separated from the outer frame 83 a, and separated into individual outer feed wires 3 b.

First and second aspects of the invention

According to a first and second aspect of the invention, FIG. 19 shows a feed wire frame modified in this way from the feed wire frame according to FIG. 13 or 17, in which a semiconductor device can be inserted from a lateral position of a feed wire frame movement path. The first aspect of the invention relates to a lead wire frame and the second aspect relates to a method of manufacturing a semiconductor device using the lead wire frame according to the first aspect of the invention. In the exemplary embodiments mentioned above, a carrier plate 100 is lowered with respect to an outer frame 83 a by bending the two end sections (floating feed wires) of the carrier plate 100 according to FIG. 14. In contrast, in the feed wire frame 84 shown in FIG. 19, both side portions of an outer frame 84 a, to which a carrier plate 100 is connected, bent in a U-shape (U-shaped sections 84 b), so that the carrier plate 100 with respect to the outer frame 83 a is lowered. Such a feed wire frame, in which the carrier plate 100 is lowered by U-shaped bending of the sections of the outer frame 84 a, has the following advantages: ( 1 ) The carrier plate 100 can be lowered lower; ( 2 ) this method can also be applied to a thin lead wire frame with little mechanical stability; and ( 3 ) the lead wires 3 extending from both sides can be arranged closer to each other. These advantages can be obtained regardless of the directional relationship between the carrier plate and the frame movement path. Accordingly, a lead wire frame according to the first aspect of the invention has no restrictions on the direction in which the carrier plate extends.

Fig. 20 shows a flow chart of a manufacturing method according to the second aspect of the invention.

An example of a manufacturing method according to the second aspect of the invention will be described below. First, similarly to the above embodiments, by punching or etching a flat metal sheet (not shown), a lead wire frame 84 is formed in a flat shape as shown in FIG. 19 (lead wire manufacturing step S1). A carrier die 100 is made such that its main die 101 extends perpendicular to the movement of the leadframe 84 during the semiconductor device manufacturing steps (ie, in this case, perpendicular to the longitudinal direction of the leadframe). Subsequently, the sections on both sides of the outer frame 84 a, to which the carrier plate is connected (ie the sections of the outer frame, which lie on both sides of the feed wire frame movement path), from forming U-shaped sections 84 b curved. These U-shaped sections protrude essentially at right angles to the frame plane. As a result, the carrier plate 100 is lowered with respect to the outer frame 84 a and the inner guide wire sections 3 a (carrier plate lowering step S2). A (not shown) semiconductor device is inserted in the direction of arrow B through these U-shaped sections 84 b between the carrier plate 100 and the inner feed wire sections 3 a (semiconductor device insertion step S3). The U-shaped sections 84 b should therefore be sufficiently large for inserting a semiconductor component. After this step, the semiconductor device is completed by similar steps as in the above-mentioned embodiments, such as. B. the wafer bond step S4, the wire bond step S5, the molding step S6, the outer electroplating step S7 and the lead wire deformation step S8.

According to this aspect of the invention, during the manufacturing process, the lead wire frames 84 are moved in their longitudinal direction and the semiconductor devices are inserted laterally to the movement path. As a result, the module insertion process can be carried out in a simple manner. Due to the fact that both sides of the outer frame 84 a are bent in a U-shape, it is possible to reduce the distance, the opposite inner feed wire sections 3 a of the outer frame. Consequently, the inner feed wire sections 3 a can continue to extend over inner areas of the semiconductor device.

In a semiconductor device according to the first example is used as a carrier plate bond material Bonding a semiconductor device uses a hard solder which has no moisture absorption. consequently there is no moisture in the carrier plate bond material absorbed, which is caused by corrosion of the semiconductor building blocks, cracks in the housing and detachments between half ladder modules and carrier plates evoked Pro bleme can be prevented. This gives you a verver more casual semiconductor device. In the process according to second example of making a half conductor device is after two lead wire frames men, d. H. one for the lead wires and another for the carrier plate, were connected to each other, an unnecessary section of the outer frame of the feeder guidewire frame for the carrier plate through in the frame men for the lead wires formed frame cutting deslits cut off and from the other sections away.

Thus, the lead wire frames in the following processes like a single lead wire frame be treated. The manufacturing process is thereby simplified and can be carried out more easily. The Production efficiency and the production yield ver get better. According to the third example created a lead wire frame that has the advantage has that after connecting two to each other guidewire frame, d. H. one for the lead wires and another for the carrier plate, one not needed section of a frame can be cut off and removed from the other parts.

According to the fourth example, it has a feeder wire frame with a carrier plate on both sides  of the main platelet, where with each side tile at right angles to the main platelet and extends between the lead wires. In this way, the width and area of the beam platelets without changing the lead wires be enlarged. According to the fifth example enables a manufacturing process to hold and attaching a semiconductor device to a carrier gel platelet in a very stable way and also improves the efficiency of thermal conductivity between the carrier plate and the semiconductor device. Therefore can be a manufacturing process, especially a wire bond Process carried out simply, accurately and effectively and manufactured a very reliable semiconductor device become. Compared to the semiconductor device with one conventional lead wire frame and one close to opposing carrier plate has the Invention semiconductor device has a smaller area which is the semiconductor device in direct contact with the Cast resin is. The probability that the half The ladder module from the cast resin is therefore less where through a very reliable semiconductor device will.

In the lead wire frame according to the first aspect of FIG Invention will be on both sides of an outer frame mens, with which the carrier plate is connected sections for lowering the carrier plate U- curved. In comparison to the embodiment, at by bending the carrier plate, which is on both sides floating wires located on the carrier plate, is lowered, this lead wire frame has the Advantages that the carrier plate can be lowered lower can achieve greater mechanical stability and that the distance between the two sides  extending lead wires can be shortened can.

According to the second aspect of the invention is a manufacture provided that the right angle for the direction of feed wire frame movement during the manufacturing process of a semiconductor device tion, extending carrier plate by U-shaped bend towards the two side sections of the outer frame, with to which the carrier plate is connected is lowered, so that the semiconductor device is on the side of the Movement path can be inserted. This will make the Block insertion process simplified. Furthermore, when U-shaped bending of the side sections, for training of U-shaped sections, the carrier plate be lowered with respect to the lead wires and at the same time the lead wires extending from both sides approximated. This makes it possible to feed the wires closer to the central area of the semiconductor device introduce, which gives flexibility in the position nation of the electrodes is increased.  

A highly reliable semiconductor device and an associated manufacturing process are thus openly available. By using a brazing material 7, such as an ordinary solder that when platelet Trägerplätt chen-bonding a semiconductor chip 1 on the substrate 1 having no moisture absorption, moisture absorption can be within a Halbleitervor direction can be effectively prevented.

Therefore occur in the semiconductor device according to the invention no problems, such as corrosion of the half ladder modules and housing cracks, due to the half conductor block absorbs moisture.

Claims (2)

1. lead wire frame ( 84 ) for use in the manufacture of a semiconductor device with a LOC structure, in which lead wires extend over a semiconductor device, characterized by
outer frame sections ( 84 a, 84 b);
in the respective outer frame sections ( 84 a) formed U-shaped sections ( 84 b) which protrude in the same direction and at right angles to the frame plane and are large enough so that the semiconductor device ( 2 ) through one of these U-shaped sections ( 84 b ) can be inserted between a carrier plate ( 100 , 101 , 102 ) and a plurality of lead wires ( 3 );
wherein the carrier plate (100, 101, 102) extends between the outer in the respective frame portions (84 a) formed U-shaped portions (84 b)
and thus lowered relative to the outer frame sections ( 84 a); and
the plurality of supply wires ( 3 ) parallel to the outer frame sections ( 84 a, 84 b) of the outer frame sections ( 84 a) connecting cross-links ( 3 d) in the direction of the carrier plate ( 100 , 101 , 102 ) and he stretch same level as the outer frame sections ( 84 a). 2. A method for producing a semiconductor device with a LOC structure, in which supply wires extend over a semiconductor module, characterized by the steps:
Making a lead wire frame ( 84 ) with
a carrier plate ( 100 , 101 , 102 ) which extends substantially perpendicular to the longitudinal direction of the feed wire frame ( 84 );
outer frame sections ( 84 a, 84 b) for connecting the carrier plate ( 100 , 101 , 102 ) with a plurality of feed wires ( 3 ) having and connecting the outer frame sections ( 84 a) connecting links ( 3 d);
the plurality of lead wires ( 3 ) extending parallel to the outer frame sections ( 84 a, 84 b) from the cross-connecting elements ( 3 d) connecting the outer frame sections ( 84 a) in the direction of the carrier plate ( 100 , 101 , 102 ) and in each case have an inner ( 3 a) and an outer ( 3 b) lead wire section;
Lowering the carrier plate ( 100 , 101 , 102 ) with respect to the outer frame sections ( 84 a) and the inner feed wire sections ( 3 a) by forming U-shaped sections ( 84 b) of the outer frame sections ( 84 a, 84 b) which the carrier plate ( 100 , 101 , 102 ) is connected to the outer frame sections ( 84 b);
Inserting a semiconductor component ( 2 ) between the carrier plate ( 100 , 101 , 102 ) and the inner feed wire sections ( 3 a) through the U-shaped sections ( 84 b);
Carrier wafer bonding of the semiconductor component ( 2 ) to the carrier wafer ( 100 , 101 , 102 );
Performing a wire bonding between the inner to guidewire portion (3 a) of each lead-in wire (3) and a layer formed on the semiconductor device (2) corresponding electrode (4);
Performing the potting to seal the semiconductor device ( 2 ) and the parts surrounding it in a body ( 6 ) so that the outer lead wire portion ( 3 b) of each lead wire ( 3 ) protrudes outward; and
The semiconductor device from the outer frame portion of the lead wire-frame (84) and deforming separating the outer lead wire portions (3 b) of each lead-in wire (3).