DE4241241A1 - Frequency-modulated voltage controlled oscillator - has control voltage input connected to second capacitance diode and also to first capacitor diode via inductance - Google Patents
Frequency-modulated voltage controlled oscillator - has control voltage input connected to second capacitance diode and also to first capacitor diode via inductanceInfo
- Publication number
- DE4241241A1 DE4241241A1 DE4241241A DE4241241A DE4241241A1 DE 4241241 A1 DE4241241 A1 DE 4241241A1 DE 4241241 A DE4241241 A DE 4241241A DE 4241241 A DE4241241 A DE 4241241A DE 4241241 A1 DE4241241 A1 DE 4241241A1
- Authority
- DE
- Germany
- Prior art keywords
- capacitance
- frequency
- control voltage
- diode
- capacitance diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J3/00—Continuous tuning
- H03J3/02—Details
- H03J3/16—Tuning without displacement of reactive element, e.g. by varying permeability
- H03J3/18—Tuning without displacement of reactive element, e.g. by varying permeability by discharge tube or semiconductor device simulating variable reactance
- H03J3/185—Tuning without displacement of reactive element, e.g. by varying permeability by discharge tube or semiconductor device simulating variable reactance with varactors, i.e. voltage variable reactive diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1203—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
- H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C3/00—Angle modulation
- H03C3/10—Angle modulation by means of variable impedance
- H03C3/12—Angle modulation by means of variable impedance by means of a variable reactive element
- H03C3/22—Angle modulation by means of variable impedance by means of a variable reactive element the element being a semiconductor diode, e.g. varicap diode
- H03C3/222—Angle modulation by means of variable impedance by means of a variable reactive element the element being a semiconductor diode, e.g. varicap diode using bipolar transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/003—Circuit elements of oscillators
- H03B2200/004—Circuit elements of oscillators including a variable capacitance, e.g. a varicap, a varactor or a variable capacitance of a diode or transistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2201/00—Aspects of oscillators relating to varying the frequency of the oscillations
- H03B2201/02—Varying the frequency of the oscillations by electronic means
- H03B2201/0208—Varying the frequency of the oscillations by electronic means the means being an element with a variable capacitance, e.g. capacitance diode
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
Description
Die Erfindung betrifft einen frequenzmodulierten spannungsgesteuerten Oszillator (VCO) nach dem Oberbegriff des Anspruchs 1.The invention relates to a frequency modulated voltage controlled oscillator (VCO) after the Preamble of claim 1.
Es ist bekannt, frequenzmodulierte spannungs gesteuerte Oszillatoren insbesondere für profes sionelle portable Geräte der Kommunikationstechnik einzusetzen. Es wird dabei angestrebt, die fre quenzmodulierten spannungsgesteuerten Oszillatoren mit einem möglichst geringen bzw. konstanten Hub über die gesamte HF-Bandbreite auszustatten. Hierzu wird das NF-Modulationssignal über eine Kapazitäts diode dem Hochpunkt eines Schwingkreises zugeführt, dem gleichzeitig die Regelspannung, ebenfalls über eine Kapazitätsdiode, zugeführt wird. Hierbei ist nachteilig, daß sich die nutzbare Bandbreite des frequenzmodulierten spannungsgesteuerten Oszilla tors aus dem sich ändernden Verhältnis der beiden Kapazitätsdioden ergibt.It is known frequency-modulated voltage controlled oscillators especially for professionals sionelle portable devices of communication technology to use. It is aimed at the fre frequency modulated voltage controlled oscillators with the smallest possible or constant stroke over the entire RF bandwidth. For this the LF modulation signal has a capacitance diode fed to the high point of an oscillating circuit, which at the same time the control voltage, also over a capacitance diode is supplied. Here is disadvantageous that the usable bandwidth of the frequency modulated voltage controlled Oszilla tors from the changing relationship between the two Capacitance diodes results.
Es ist Aufgabe der Erfindung, einen frequenz modulierten spannungsgesteuerten Oszillator der gattungsgemäßen Art zu schaffen, mit dem bei konstantem NF-Signal ein konstanter Frequenzhub über die gesamte HF-Schaltbandbreite erzeugt wird und bei dem eine kanalabhängige Variation des NF- Modulationssignals nicht mehr erforderlich ist.It is an object of the invention to provide a frequency modulated voltage controlled oscillator of the Generic type to create with constant LF signal a constant frequency swing is generated over the entire RF switching bandwidth and where a channel-dependent variation of the NF- Modulation signal is no longer required.
Erfindungsgemäß wird die Aufgabe durch die im Kenn zeichen des Anspruchs 1 angegebenen Merkmale gelöst.According to the invention, the object is characterized by the Character of claim 1 specified features solved.
Es hat sich gezeigt, wenn der zur Modulation benutzten Kapazitätsdiode auch die Regelspannung zur Arbeitspunkteinstellung zugeführt wird, eine sehr viel größere Schaltbandbreite gegenüber den bekannten Schaltungen erreicht werden kann.It has been shown if the modulation also used the control voltage is supplied for setting the working point, a much larger switching bandwidth compared to the known circuits can be achieved.
In vorteilhafter Ausgestaltung stehen die Kapazi tätswerte der Kapazitätsdiode für das NF-Modu lationssignal und der Kapazitätsdiode für die Regelspannung im Verhältnis 1 : 1.In an advantageous embodiment, the capacitors Actual values of the capacitance diode for the NF module tion signal and the capacitance diode for the Control voltage in a ratio of 1: 1.
Weitere vorteilhafte Ausgestaltungen der Erfindung ergeben sich aus den in den Unteransprüchen aufgeführten Maßnahmen.Further advantageous embodiments of the invention result from the in the subclaims measures listed.
Die Erfindung wird nachfolgend in einem Aus führungsbeispiel anhand der zugehörigen Zeichnung, die in einer einzigen Figur ein Schaltbild eines frequenzmodulierten spannungsgesteuerten Oszilla tors (VCO) zeigt, näher erläutert.The invention is hereinafter in one off management example based on the associated drawing, which in a single figure is a circuit diagram of a frequency modulated voltage controlled Oszilla tors (VCO) shows, explained in more detail.
Der in der Figur gezeigte frequenzmodulierte span nungsgesteuerte Oszillator besitzt einen aus einer Kapazität C1 und einer Induktivität L1 be stehenden Schwingkreis 10, dessen Hochpunkt 12 einerseits über eine Kapazität C2 mit einem Transistor T1 und andererseits mit einer Eingangs schaltung 14 verbunden ist. The frequency-modulated voltage-controlled oscillator shown in the figure has a resonant circuit 10 consisting of a capacitor C1 and an inductor L1, the high point 12 of which is connected on the one hand via a capacitor C2 to a transistor T1 and on the other hand to an input circuit 14 .
Die Eingangsschaltung 14 weist einen Eingang 16 für das NF-Modulationssignal auf, der über eine Kapazi tät C3 und eine Induktivität L2 mit einer Kapazi tätsdiode CD1 verbunden ist. Zwischen der Kapazität C3 und der Induktivität L2 liegt ein mit Masse verbundener Widerstand Rb. Die Kapazitätsdiode CD1 ist mit einer Kapazität C3 verbunden, die wiederum an den Hochpunkt 12 des Schwingkreises 10 geschaltet ist. Weiterhin ist ein Regelspannungs eingang 18 über eine Induktivität L3 mit einer Kapazitätsdiode CD2 verbunden. Die Kapazitätsdiode CD2 ist über eine weitere Kapazität C5 ebenfalls mit dem Hochpunkt 12 des Schwingkreises 10 verbunden. Der Regelspannungseingang 18 ist weiter hin über eine Induktivität L4 mit der Kapazitäts diode CD1 verbunden.The input circuit 14 has an input 16 for the LF modulation signal, which is connected to a capacitance diode CD1 via a capacitance C3 and an inductance L2. A resistor R b connected to ground lies between the capacitance C3 and the inductance L2. The capacitance diode CD1 is connected to a capacitance C3, which in turn is connected to the high point 12 of the resonant circuit 10 . Furthermore, a control voltage input 18 is connected via an inductor L3 to a capacitance diode CD2. The capacitance diode CD2 is also connected to the high point 12 of the resonant circuit 10 via a further capacitance C5. The control voltage input 18 is further connected via an inductor L4 to the capacitance diode CD1.
Der frequenzmodulierte spannungsgesteuerte Oszilla tor besitzt weitere, hier für die Erfindung nicht näher zu betrachtende Kapazitäten C, Widerstände R und Induktivitäten L.The frequency modulated voltage controlled Oszilla Tor has more, not here for the invention Capacities C to be considered, resistances R and inductors L.
Die erfindungsgemäße Schaltung übt folgende Funktion aus.The circuit according to the invention practices the following Function off.
Bei der zur Modulation des über den Eingang 16 geführten NF-Modulationssignals dienenden Kapazi tätsdiode CD1 erfolgt die Arbeitspunkteinstellung über die über den Eingang 18 herangeführte Regel spannung. Die Verstimmung des frequenzmodulierten spannungsgesteuerten Oszillators erfolgt über die, über den Eingang 18 anliegende Regelspannung und die Kapazitätsdiode CD2. In the case of modulation of the low-frequency modulation signal led via the input 16 , the capacitance diode CD1 is used to set the operating point via the control voltage brought up via the input 18 . The frequency-modulated voltage-controlled oscillator is detuned via the control voltage applied via input 18 and the capacitance diode CD2.
In vorteilhafter Ausgestaltung besitzen die Kapa zitätsdioden CD1 und CD2 bei gleichem Bauteiltyp und vernachlässigbarer Streuung ein Verhältnis der Kapazitätswerte von 1 : 1. Aus diesem immer konstan ten Verhältnis der Kapazitätswerte der Kapazitäts diode CD1 und CD2 resultiert eine größere Band breite der gesamten Oszillatorschaltung. Die Schaltbandbreite der Schaltung wird weiterhin durch das Verhältnis der Kapazitätswerte der Kapazität C4 und C5, die in einem Verhältnis von mindestens 1 : 10 liegen, bestimmt. Durch Einstellung dieses Kapazi tätsverhältnisses wird eine Reduzierung des Phasen rauschens des frequenzmodulierten spannungsgesteu erten Oszillators erreicht. Die effektive Kapazität der Serienschaltung der Kapazitätsdiode CD1 und der Kapazität C4, die am Hochpunkt 12 des Schwing kreises 10 anliegt, wird durch die Kapazität C4 bestimmt. Dadurch wird erreicht, daß die Kapazi tätsänderung, die zur Modulation benötigt wird, über die gesamte HF-Bandbreite quasi konstant ist.In an advantageous embodiment, the capacitance diodes CD1 and CD2 have the same component type and negligible scattering, a ratio of the capacitance values of 1: 1. This constant ratio of the capacitance values of the capacitance diode CD1 and CD2 results in a larger bandwidth of the entire oscillator circuit. The switching bandwidth of the circuit is further determined by the ratio of the capacitance values of capacitance C4 and C5, which are in a ratio of at least 1:10. By adjusting this capacitance ratio, a reduction in the phase noise of the frequency-modulated voltage-controlled oscillator is achieved. The effective capacity of the series connection of the capacitance diode CD1 and the capacitance C4, which is present at the high point 12 of the resonant circuit 10 , is determined by the capacitance C4. This ensures that the change in capacitance, which is required for modulation, is quasi constant over the entire RF bandwidth.
Claims (3)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4241241A DE4241241A1 (en) | 1992-12-08 | 1992-12-08 | Frequency-modulated voltage controlled oscillator - has control voltage input connected to second capacitance diode and also to first capacitor diode via inductance |
FR9313577A FR2699021B1 (en) | 1992-12-08 | 1993-11-15 | FREQUENCY MODULE OSCILLATOR AND VOLTAGE CONTROL. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4241241A DE4241241A1 (en) | 1992-12-08 | 1992-12-08 | Frequency-modulated voltage controlled oscillator - has control voltage input connected to second capacitance diode and also to first capacitor diode via inductance |
Publications (1)
Publication Number | Publication Date |
---|---|
DE4241241A1 true DE4241241A1 (en) | 1994-06-09 |
Family
ID=6474652
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE4241241A Withdrawn DE4241241A1 (en) | 1992-12-08 | 1992-12-08 | Frequency-modulated voltage controlled oscillator - has control voltage input connected to second capacitance diode and also to first capacitor diode via inductance |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE4241241A1 (en) |
FR (1) | FR2699021B1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5568096A (en) * | 1995-04-19 | 1996-10-22 | Telefonaktiebolaget Lm Ericsson | Apparatus and method for using negative FM feedback in high quality oscillator devices |
EP1223670A2 (en) * | 2001-01-03 | 2002-07-17 | Infineon Technologies AG | Voltage controlled oscillator for frequency modulation |
EP2173028A3 (en) * | 2008-10-01 | 2014-12-24 | Robert Bosch GmbH | Method for regulating a basic frequency of a voltage-controlled oscillator as a carrier frequency of a frequency-modulated signal |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56111306A (en) * | 1980-02-08 | 1981-09-03 | Yuniden Kk | Frequency modulating circuit |
US4378534A (en) * | 1981-03-31 | 1983-03-29 | Motorola, Inc. | Wideband modulation sensitivity compensated voltage controlled oscillator |
US4503402A (en) * | 1982-08-19 | 1985-03-05 | General Electric Company | Voltage controlled oscillator having approximately constant modulation sensitivity |
US5075643A (en) * | 1990-12-24 | 1991-12-24 | Motorola, Inc. | Frequency modulator |
-
1992
- 1992-12-08 DE DE4241241A patent/DE4241241A1/en not_active Withdrawn
-
1993
- 1993-11-15 FR FR9313577A patent/FR2699021B1/en not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5568096A (en) * | 1995-04-19 | 1996-10-22 | Telefonaktiebolaget Lm Ericsson | Apparatus and method for using negative FM feedback in high quality oscillator devices |
WO1996033551A1 (en) * | 1995-04-19 | 1996-10-24 | Telefonaktiebolaget Lm Ericsson (Publ) | An apparatus and method for using negative fm feedback in high quality oscillator devices |
EP1223670A2 (en) * | 2001-01-03 | 2002-07-17 | Infineon Technologies AG | Voltage controlled oscillator for frequency modulation |
DE10100113A1 (en) * | 2001-01-03 | 2002-07-18 | Infineon Technologies Ag | Voltage controlled oscillator for frequency modulation |
US6621364B2 (en) | 2001-01-03 | 2003-09-16 | Infineon Technologies Ag | Voltage-controlled oscillator for frequency modulation |
EP1223670A3 (en) * | 2001-01-03 | 2004-06-30 | Infineon Technologies AG | Voltage controlled oscillator for frequency modulation |
EP2173028A3 (en) * | 2008-10-01 | 2014-12-24 | Robert Bosch GmbH | Method for regulating a basic frequency of a voltage-controlled oscillator as a carrier frequency of a frequency-modulated signal |
Also Published As
Publication number | Publication date |
---|---|
FR2699021A1 (en) | 1994-06-10 |
FR2699021B1 (en) | 1995-06-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8127 | New person/name/address of the applicant |
Owner name: MOTOROLA INC.(N.D.GES.D. STAATES DELAWARE), SCHAUM |
|
8128 | New person/name/address of the agent |
Representative=s name: RICHARDT, M., DIPL.-ING., PAT.-ANW., 65343 ELTVILL |
|
8120 | Willingness to grant licences paragraph 23 | ||
8110 | Request for examination paragraph 44 | ||
8139 | Disposal/non-payment of the annual fee |