DE2929897A1 - VCO for radio transceiver - has oscillation circuit with inductance, and has capacitive diodes junction point coupled to active element output - Google Patents
VCO for radio transceiver - has oscillation circuit with inductance, and has capacitive diodes junction point coupled to active element outputInfo
- Publication number
- DE2929897A1 DE2929897A1 DE19792929897 DE2929897A DE2929897A1 DE 2929897 A1 DE2929897 A1 DE 2929897A1 DE 19792929897 DE19792929897 DE 19792929897 DE 2929897 A DE2929897 A DE 2929897A DE 2929897 A1 DE2929897 A1 DE 2929897A1
- Authority
- DE
- Germany
- Prior art keywords
- inductance
- active element
- oscillator
- junction point
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1203—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
- H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/003—Circuit elements of oscillators
- H03B2200/004—Circuit elements of oscillators including a variable capacitance, e.g. a varicap, a varactor or a variable capacitance of a diode or transistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2201/00—Aspects of oscillators relating to varying the frequency of the oscillations
- H03B2201/02—Varying the frequency of the oscillations by electronic means
- H03B2201/0208—Varying the frequency of the oscillations by electronic means the means being an element with a variable capacitance, e.g. capacitance diode
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
Description
Spannungsgesteuerter Oszillator Voltage controlled oscillator
Die Erfindung bezieht sich auf einen spannungsgesteuerten Oszillator, insbesondere für ein Funk-Sende/Empfangsgerät, mit einem aktiven Element, einem Schwingkreis und zwei Kapazitätsdioden in Antiserienschaltung parallel zum Schwingkreis.The invention relates to a voltage controlled oscillator, especially for a radio transceiver, with an active element, a Oscillating circuit and two capacitance diodes in an antiseries circuit parallel to the oscillating circuit.
Stand der Technik Aus der DE-OS 27 21 406, Fig.3, ist ein derartiger spannungsgesteuerter Oszillator bekannt. Das aktive Element besteht dabei aus einem Feldeffekttransistor (FET) und der Schwingkreis aus einer Induktivität parallel zur Reihenschaltung von zwei Festkondensatoren. Der Verbindungspunkt der beiden Festkondensatoren miteinander ist mit dem Source- und das heiße Ende des Schwingkreises mit dem Gateanschluß des FET verbunden; das kalte Ende des Schwingkreises liegt auf Nullpotential. Parallel zur Induktivität liegt eine Antiserienschaltung zweier Kapazitätsdioden, denen eine Steuerspannung zur Einstellung der Frequenz des Oszillators zugeführt wird.Prior art From DE-OS 27 21 406, Fig.3, such a voltage controlled oscillator known. The active element consists of one Field effect transistor (FET) and the resonant circuit from an inductance in parallel for series connection of two fixed capacitors. The connection point of the two Fixed capacitors with each other is with the source and the hot end of the resonant circuit connected to the gate terminal of the FET; the cold end of the oscillating circuit lies to zero potential. There is an antiseries circuit of two parallel to the inductance Capacitance diodes, which have a control voltage to adjust the frequency of the oscillator is fed.
Soll ein spannungsgesteuerter Oszillator in einem Synthesizer eingesetzt werden, dann muß er eine gute Kurzzeitstabilität aufweisen. Soll der Synthesizer in einem vielkanaligen Mobilfunkgerät verwendet werden, dann muß der spannungsgesteuerte Oszillator auch einen weiten Durchstimmbereich aufweisen.A voltage controlled oscillator is supposed to be used in a synthesizer then it must have good short-term stability. Should the synthesizer are used in a multi-channel mobile radio, then the voltage-controlled Oscillator also have a wide tuning range.
Aufgabe Der Erfindung liegt die Aufgabe zugrunde, einen spannungsgesteuerten Oszillator der eingangs genannten Art anzugeben, der eine gute Kurzzeitstabilität, eine hohe Schwinqamnlitude und einen weiten Durchstimmbereich aufweist.The object of the invention is to provide a voltage-controlled Specify an oscillator of the type mentioned above, which has good short-term stability, has a high oscillation amplitude and a wide tuning range.
Die Lösung dieser Aufgabe erfolgt mit den im Anspruch 1 angegebenen Mitteln. Im Unteranspruch ist eine vorteilhafte Ausgestaltung angegeben, die eingesetzt werden kann, wenn die Eingangskapazität des aktiven Elementes zu groß ist oder zu große Streukapazitäten vorhanden sind.This problem is solved with those specified in claim 1 Means. In the dependent claim, an advantageous embodiment is specified which is used can be if the input capacitance of the active element is too large or too large stray capacities are available.
Vorteile Die Erfindung gibt eine einfache Schaltung für einen spannungsgesteuerten Oszillator an, der einen erweiterten Durchstimmbereich aufweist. Beim Einsatz des erfindungsgemäßen Oszillators in einem Synthesizer eines vielkanaligen Mobilfunkgerätes ist daher eine Beschränkung auf Teilbänder des Frequenzbereiches oder eine Umschaltung auf die Teilbänder nicht nötig. Außerdem weist der Oszillator durch seinen niedrigen Kennwiderstand eine sehr gute Kurzzeitstabilität auf, wodurch er zum Einsatz in einem Synthesizer besondersgeeignet ist.Advantages The invention provides a simple circuit for a voltage controlled Oscillator, which has an extended tuning range. When using the oscillator according to the invention in a synthesizer of a multi-channel mobile radio device is therefore a restriction to sub-bands of the frequency range or a switchover not necessary on the subbands. In addition, the oscillator is characterized by its low Characteristic resistor has very good short-term stability, making it suitable for use in is particularly suitable for a synthesizer.
Beschreibung Die Erfindung wird nachstehend anhand von Zeichnungen von Ausführungsbeispielen näher erläutert. Es zeigen: Fig.1 ein Prinzipschaltbild eines spannungsgesteuerten Oszillators und Fig.2 eine Ausgestaltung des Oszillators gemäß Fig. 1.Description The invention is explained below with reference to drawings of exemplary embodiments explained in more detail. They show: FIG. 1 a basic circuit diagram a voltage controlled oscillator and 2 shows an embodiment of the oscillator according to FIG. 1.
Der in Fig.1 dargestellte spannungsgesteuerte Oszillator weist als aktives Element einen Feldeffekttransistor T1 auf, der in Source-Schaltung eingesetzt ist. Am Drain-Anschluß liegt die Betriebsspannung UB an und er ist über einen Kondensator Ccc mit dem Nullpotential verbunden. Der Source-Anschluß ist über eine Drossel 1 und einen Widerstand 2 mit dem Nullpotential verbunden.The voltage controlled oscillator shown in Figure 1 has as active element on a field effect transistor T1, which is used in source circuit is. The operating voltage UB is applied to the drain connection and it is via a capacitor Ccc connected to zero potential. The source connection is via a choke 1 and a resistor 2 connected to the zero potential.
Der Wert des Widerstandes 2 bestimmt den Arbeitspunkt bzw. die Verstärkung des Transistors T1. Die Drossel 1 mit einem möglichst hohen Induktivitätswert verhindert, daß die Schwingschaltung durch den Widerstand 2 belastet wird. Vom Gate-Anschluß aus liegen eine Induktivität 3 und eine Antiserienschaltung aus zwei Kapazitätsdioden 4 und 5 als Schwingkreiselemente nach Nullpotential. Die gewählte Antiserienschaltung der Kapazitätsdioden gestattet hohe Schwingamplituden, ohne daß störende nichtlineare Effekte auftreten. Hohe Schwingamplituden sind auch eine Voraussetzung für eine gute Kurzzeitstabilität. Vom Verbindungspunkt 6 der Kapazitätsdioden 4 und 5 miteinander ist ein meist großer Koppelkondensator 7 zum Source-Anschluß angeschlossen. An den Gate-Anschluß ist die Klemme f angeschlossen, an der die Schwingfrequenz abgenommen werden kann. Die Abstimmspannung UA zur Einstellung der Schwingfrequenz gelangt über eine Drossel 8 an die Kapazitätsdioden 4 und 5. Da die Abstimmspannung sorgfältig gesiebt sein muß, weil Störungen sich als starker Störfrequenz- bzw. Störphasenhub bemerkbar machen würden, ist der Anschluß für die Abstimmspannung UA mit einem Kondensator Ccc abgeblockt. Gleichzeitig wird dadurch ein unerwünschtes Entweichen von HF-Signalen über diesen Weg vermieden. Es sei hier angemerkt, daß auch andere Schaltungsarten für den Oszillator eingesetzt werden können. Der Abgleich des Oszillators auf seine Soll-Schwingfrequenz bei vorgegebener Abstimmspannung kann durch Verändern der Induktivität 3 vorgenommen werden, wozu sie einstellbar ausgeführt ist.The value of the resistor 2 determines the operating point or the gain of transistor T1. The choke 1 with the highest possible inductance value prevents that the oscillating circuit is loaded by the resistor 2. From the gate terminal there are an inductance 3 and an antiseries circuit made up of two capacitance diodes 4 and 5 as resonant circuit elements after zero potential. The selected antiseries circuit the varactor allows high oscillation amplitudes without disturbing non-linear Effects occur. High vibration amplitudes are also a prerequisite for a good short-term stability. From the connection point 6 of the varactor diodes 4 and 5 to one another a mostly large coupling capacitor 7 is connected to the source connection. To the Gate connection is connected to terminal f, at which the oscillation frequency is picked up can be. The tuning voltage UA is used to set the oscillation frequency via a choke 8 to the capacitance diodes 4 and 5. Since the tuning voltage carefully must be screened because disturbances show up as a strong disturbance frequency or disturbance phase deviation would make noticeable, is the connection for the tuning voltage UA with a capacitor Ccc blocked. At the same time, this leads to an undesired escape of HF signals avoided this way. It should be noted here that others too Types of circuit for the oscillator can be used. Adjusting the oscillator to its target oscillation frequency with a given tuning voltage can be changed by changing the inductance 3 are made, for which purpose it is designed to be adjustable.
Wenn für das aktive Element ein Doppelgate-MOSFET eingesetzt wird, kann dessen Arbeitspunkt auch über die Spannung am zweiten Gate eingestellt werden. Falls die Eingangskapazität des Transistors zu groß ist oder zusätzliche Streukapazitäten vorhanden sind, so sind mehrere Antiserienschaltungen aus je zwei Kapazitätsdioden dem Schwingkreis parallel zu schalten.If a double gate MOSFET is used for the active element, its operating point can also be set via the voltage at the second gate. If the input capacitance of the transistor is too large or additional stray capacitance are present, there are several antiseries, each consisting of two varactor diodes to connect in parallel with the resonant circuit.
In Fig.2 ist eine derartig geänderte Oszillatorschaltung dargestellt, wobei für gleiche Teile auch gleiche Bezugszeichen verwendet werden. Das aktive Element ist ein Doppelgate-MOSFET T2 und den Kapazitätsdioden 4 und 5 sind je zwei weitere Antiserienschaltungen aus Kapazitätsdioden 9, 10 und 11, 12 parallel geschaltet. Vom zweiten Gate von T2 ist ein Kondensator Ccc nach Nullpotential geschaltet und die Spannungsversorgung des Gates erfolgt über einen Spannungsteiler 12. Der Spannungsteiler 12 ist über eine Drossel 13 an die Betriebsspannung UB angeschlossen. Nach der Drossel 13 wird auch die Spannung für den Drain-Anschluß abgenommen. Es empfiehlt sich für die Betriebsspannung UB eine Stabilisierung vorzusehen.In Figure 2 such a modified oscillator circuit is shown, the same reference numerals being used for the same parts. The active one Element is a double gate MOSFET T2 and the capacitance diodes 4 and 5 are two each further antiseries of capacitance diodes 9, 10 and 11, 12 connected in parallel. A capacitor Ccc is connected to zero potential from the second gate of T2 and the gate is supplied with voltage via a voltage divider 12. The voltage divider 12 is connected to the operating voltage UB via a choke 13. After the throttle 13 the voltage for the drain connection is also taken off. It is recommended for the operating voltage UB to provide a stabilization.
Die Schwingfrequenz kann auch von einem anderen Punkt, z.B. vom Source-Anschluß des Doppelgate-MOSFETS abgenommen werden.The oscillation frequency can also come from another point, e.g. from the source connection of the double-gate MOSFET can be removed.
2 Ansprüche Leerseite2 claims Blank page
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19792929897 DE2929897A1 (en) | 1979-07-24 | 1979-07-24 | VCO for radio transceiver - has oscillation circuit with inductance, and has capacitive diodes junction point coupled to active element output |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19792929897 DE2929897A1 (en) | 1979-07-24 | 1979-07-24 | VCO for radio transceiver - has oscillation circuit with inductance, and has capacitive diodes junction point coupled to active element output |
Publications (1)
Publication Number | Publication Date |
---|---|
DE2929897A1 true DE2929897A1 (en) | 1981-01-29 |
Family
ID=6076589
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19792929897 Withdrawn DE2929897A1 (en) | 1979-07-24 | 1979-07-24 | VCO for radio transceiver - has oscillation circuit with inductance, and has capacitive diodes junction point coupled to active element output |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE2929897A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0125586A2 (en) * | 1983-05-07 | 1984-11-21 | Deutsche Thomson-Brandt GmbH | Oscillator circuit for television receivers |
US4536724A (en) * | 1981-12-21 | 1985-08-20 | Matsushita Electric Industrial Company Limited | Voltage-controlled oscillator having three or more varactor diodes |
EP0207650A2 (en) * | 1985-06-07 | 1987-01-07 | Vari-L Company, Inc. | Wide range electronic oscillator |
-
1979
- 1979-07-24 DE DE19792929897 patent/DE2929897A1/en not_active Withdrawn
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4536724A (en) * | 1981-12-21 | 1985-08-20 | Matsushita Electric Industrial Company Limited | Voltage-controlled oscillator having three or more varactor diodes |
EP0125586A2 (en) * | 1983-05-07 | 1984-11-21 | Deutsche Thomson-Brandt GmbH | Oscillator circuit for television receivers |
EP0125586A3 (en) * | 1983-05-07 | 1987-08-05 | Deutsche Thomson-Brandt Gmbh | Oscillator circuit for television receivers |
EP0207650A2 (en) * | 1985-06-07 | 1987-01-07 | Vari-L Company, Inc. | Wide range electronic oscillator |
EP0207650A3 (en) * | 1985-06-07 | 1988-08-03 | Vari-L Company, Inc. | Wide range electronic oscillator |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OAP | Request for examination filed | ||
OD | Request for examination | ||
8130 | Withdrawal |