DE411966C - Crystal detector for electric waves - Google Patents

Crystal detector for electric waves

Info

Publication number
DE411966C
DE411966C DET27892D DET0027892D DE411966C DE 411966 C DE411966 C DE 411966C DE T27892 D DET27892 D DE T27892D DE T0027892 D DET0027892 D DE T0027892D DE 411966 C DE411966 C DE 411966C
Authority
DE
Germany
Prior art keywords
detector
crystal detector
electric waves
crystal
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DET27892D
Other languages
German (de)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CARL TAENZLER
Original Assignee
CARL TAENZLER
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CARL TAENZLER filed Critical CARL TAENZLER
Priority to DET27892D priority Critical patent/DE411966C/en
Application granted granted Critical
Publication of DE411966C publication Critical patent/DE411966C/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Measurement Of Radiation (AREA)

Description

Kristalldetektor für elektrische Wellen. Die verschiedenen Kristalldetektoren für elektrische Wellen haben immer mehr oder weniger den Nachteil, daß sie teils durch Erschütterung und beim Transport, teils durch atmosphärische Einflüsse sehr leicht unempfindlich werden. Es ist dann mit viel Zeitverlust verbunden, die Detektoren wieder sorgfältig einzustellen und den Empfänger wieder gebrauchsfähig zu machen. Der neue Detektor soll diese Übelstände beseitigen. Zu diesem Zweck sind die Kristalle in einer luftdicht abgeschlossenen Kapsel eingeschlossen, wie die Abbildungen zeigen. Die Ringe c und d sind aus Isoliermaterial hergestellt, und der innere Hohlraum des Ringes c ist mit einer Schicht empfindlicher Kristallchen b lose angefüllt. Der Ring c ist, wie Abb. i zeigt, sehr -flach, so daß -,die Schicht von Kristallen sehr dünn wird. Dieselbe ist oben und unten durch eine dünne Blechscheibe a eingeschlossen. Die Metallscheiben a sind so groß wie der Isolierring c. Das Ganze ist schließlich durch einen beiderseits übergreifenden Ring d aus Isoliermaterial umgeben und dadurch zusammengehalten und versiegelt zu einem leicht auswechselbaren, handlichen, witterungsbeständigen Detektorelernent. Diese Art Detektorscheibe liegt im Apparat lose in einer Ausbohrung des Grundbrettes mit der unteren Metallfläche auf der Kopffläche des Kontaktbolzens e (Abb. i). Von oben wird dann die Feder f mit ihrem Kopf am freien Ende gegen die obere Metallfläche angedrückt und durch die Schraube g der Federdruck gegen den Detektor feiner eingestellt. Der Detektor kann auch, wie Abb. 3 zeigt, mehrere solche Kristallschichten übereinander besitzen. Die Schichten sind in diesem Falle aber immer durch voneinander isoliert liegende Metallbleche zu -trennen. Dieselben sind dann natürlich durch einen entsprechend größeren Isolierring d umschlossen.Electric wave crystal detector. The various crystal detectors for electrical waves always have the disadvantage that they are very easily insensitive, partly due to vibrations and during transport, partly due to atmospheric influences. It is then associated with a lot of loss of time to carefully readjust the detectors and make the receiver ready for use again. The new detector is supposed to remedy this problem. For this purpose, the crystals are enclosed in an airtight capsule, as the pictures show. The rings c and d are made of insulating material, and the inner cavity of the ring c is loosely filled with a layer of delicate crystals b. The ring c is, as Fig. I shows, very flat, so that the layer of crystals becomes very thin. It is enclosed above and below by a thin sheet metal disk a. The metal disks a are as large as the insulating ring c. The whole thing is finally surrounded by a ring d made of insulating material that overlaps on both sides and is thus held together and sealed to form an easily exchangeable, handy, weather-resistant detector element. This type of detector disk lies loosely in the apparatus in a hole in the base board with the lower metal surface on the top surface of the contact pin e (Fig. I). The spring f is then pressed from above with its head at the free end against the upper metal surface and the spring pressure against the detector is adjusted more finely by means of the screw g. As Fig. 3 shows, the detector can also have several such crystal layers on top of one another. In this case, however, the layers must always be separated by metal sheets that are isolated from one another. The same are then naturally enclosed by a correspondingly larger insulating ring d.

Claims (1)

PATENT-ANspp,ücnE: i. Kristalldetektor für elektrische Wellen, gekennzeichnet durch eine oder niehrere Schichten von Kristallen, die zwischen voneinander isolierten Metallblechen gelagert und am Umfang durch einen Isolierring luftdicht umschlossen sind. :2. Kristalldetektor nach Anspruch i, dadurch gekennzeichnet, daß er mit dem unteren Elektrodenblech auf der Fläche eines Kontaktbolzens (e) aufliegt, währen,d gegen das obere Blech eine regulierbare Feder (f) drückt, die die elektrische Verbindung fierstellt und zugleich den Detektor in seiner Stellung hält. PATENT-ANspp, ücnE: i. Crystal detector for electrical waves, characterized by one or more layers of crystals, which are mounted between metal sheets insulated from one another and are hermetically enclosed on the circumference by an insulating ring. : 2. Crystal detector according to claim i, characterized in that it rests with the lower electrode sheet on the surface of a contact bolt (e), while an adjustable spring (f) presses against the upper sheet, which establishes the electrical connection and at the same time the detector in it Holds position.
DET27892D 1923-07-05 1923-07-05 Crystal detector for electric waves Expired DE411966C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DET27892D DE411966C (en) 1923-07-05 1923-07-05 Crystal detector for electric waves

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DET27892D DE411966C (en) 1923-07-05 1923-07-05 Crystal detector for electric waves

Publications (1)

Publication Number Publication Date
DE411966C true DE411966C (en) 1925-04-09

Family

ID=7553785

Family Applications (1)

Application Number Title Priority Date Filing Date
DET27892D Expired DE411966C (en) 1923-07-05 1923-07-05 Crystal detector for electric waves

Country Status (1)

Country Link
DE (1) DE411966C (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE976651C (en) * 1951-12-05 1964-02-20 Siemens Ag Crystal diode for very high frequencies
US3740618A (en) * 1970-09-29 1973-06-19 Bbc Brown Boveri & Cie Semiconductor unit and method of manufacture thereof
US9073818B2 (en) 2010-06-02 2015-07-07 Evonik Degussa Gmbh Quaternary dialkanolamine esters

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE976651C (en) * 1951-12-05 1964-02-20 Siemens Ag Crystal diode for very high frequencies
US3740618A (en) * 1970-09-29 1973-06-19 Bbc Brown Boveri & Cie Semiconductor unit and method of manufacture thereof
US9073818B2 (en) 2010-06-02 2015-07-07 Evonik Degussa Gmbh Quaternary dialkanolamine esters

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