DE4017697A1 - Mfg. electronic component with chip on thermal conductor - positioned in through-hole in base for use as surface mounted power device on metal core circuit board - Google Patents

Mfg. electronic component with chip on thermal conductor - positioned in through-hole in base for use as surface mounted power device on metal core circuit board

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Publication number
DE4017697A1
DE4017697A1 DE19904017697 DE4017697A DE4017697A1 DE 4017697 A1 DE4017697 A1 DE 4017697A1 DE 19904017697 DE19904017697 DE 19904017697 DE 4017697 A DE4017697 A DE 4017697A DE 4017697 A1 DE4017697 A1 DE 4017697A1
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Prior art keywords
chip
characterized
base
heat
method according
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Granted
Application number
DE19904017697
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German (de)
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DE4017697C2 (en )
Inventor
Ludger Dipl Phys Olbrich
Anton Dipl Ing Doering
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Robert Bosch GmbH
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Robert Bosch GmbH
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4871Bases, plates or heatsinks
    • H01L21/4875Connection or disconnection of other leads to or from bases or plates
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334Auxiliary members in encapsulations
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32153Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
    • H01L2224/32175Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic
    • H01L2224/32188Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic the layer connector connecting to a bonding area protruding from the surface of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Abstract

Chip(s) are placed on a base (1) connecting to the terminals leading to the outside and contact a thermal conductor (11). The latter and the base are perforated in the area (13) for mounting the chip (30). A heat conductive piece (21) is placed in the hole (20) and connected to the base and chip is placed on and the a frame (11) and the heat conductor. The frame is pref. of copper alloy or aluminium. The base is perforated by stamping, etching or erosion. The frame and base are connected by pinching, cold welding, bonding with adhesive or soldering. The frame is placed with Ni and/or Ag or Au on the surface (25) fitting in the hole. The chip is attached to the frame by bonding with adhesive, soldering or eutectic bonding and contacted with the terminals (12) with bond wire (32). USE/ADVANTAGE - Power device mountable on surface of metal core circuit boards. Can be pushed through circuit board and soldered firmly to the back. Standard lead frames may be used as the base. Ensures esp. good heat dissipation.

Description

Stand der Technik State of the art

Die Erfindung geht aus von einem elektronischen Bauelement und einem Verfahren zum Aufbau von elektronischen Bauelementen nach der Gattung der selbständigen Hauptansprüche. The invention is based on an electronic component and a method for establishing of electronic devices according to the preamble of the independent main claims.

Es ist bereits bekannt, elektronische Leistungsbauelemente zur Ableitung von Wärme mit Wärmesenken in Form von wärmeleitenden Körpern zu versehen. It is already known to provide electronic power devices for dissipating heat with heat sinks in the form of heat conducting bodies. Diese werden meist lose beim Umhüllen des Chips in die Gehäusepreßform eingelegt, wobei sie nur über die Montage fläche des als Träger dienenden Leadframes mit dem Chip in Wärme kontakt stehen. These are usually loosely inserted in the wrapping of the chip in the Gehäusepreßform, wherein they face only the assembly of the leadframe serving as a support to the chip are in thermal contact. Für oberflächenmontierbare Bauelemente ist ferner bekannt, eine Seite des Gehäuses, die nicht der Leiterplatte zuge wandt ist, als Wärmesenke auszubilden und an auf die Leiterplatte aufgebrachte Kühlwinkel anzuschließen. For surface-mounted components is also known that one side of the housing, the circuit board is not supplied Wandt to form as a heat sink and connected to the printed circuit board applied cooling angle. Dieser Aufbau ist nur mit entsprechendem Platzaufwand realisierbar. This structure can be realized only with appropriate amount of space.

Vorteile der Erfindung Advantages of the Invention

Das erfindungsgemäße Verfahren mit den kennzeichnenden Merkmalen des Anspruchs 1 hat den Vorteil, daß es zur Herstellung beliebiger Bauelementformen eingesetzt werden kann, egal ob die Bauelemente oberflächenmontierbar sein sollen oder durch die Leiterplatte durch gesteckt und auf der Rückseite der Leiterplatte festgelötet werden sollen. The method according to the invention with the characterizing features of claim 1 has the advantage that it can be used for producing any component forms, regardless of whether the components are to be surface mountable or intended to be inserted through the circuit board by and soldered on the back of the circuit board. Vorteilhaft ist außerdem, daß Standard-Leadframes als Träger verwendet werden können. It is also advantageous that standard lead frame can be used as carriers. Durch das Einbringen eines wärmeleitenden Körpers in die Montagefläche des Leadframes und durch die direkte Montage des Chips auf dem wärmeleitenden Körper wird eine besonders gute Wärmeableitung erreicht. By introducing a thermally conductive body in the mounting surface of the lead frame and by the direct mounting of the chips on the heat conducting body, a particularly good heat dissipation is achieved.

Durch die in den Unteransprüchen aufgeführten Maßnahmen sind vor teilhafte Weiterbildungen des im Hauptanspruch angegebenen Ver fahrens möglich. By the provisions recited in the dependent claims, proceedings are possible in some refinements of the United disclosed in the main claim. Für eine Massenfertigung besonders vorteilhaft ist, daß sich der Durchbruch in der Montagefläche des Leadframes durch Standardverfahren wie Ausstanzen, Freiätzen oder Freierodieren erzeugen läßt. For mass production is particularly advantageous that the opening in the mounting surface of the lead frame can be generated by standard methods such as punching, etching free or free-eroding. Bei exakter Dimensionierung des wärmeleitenden Körpers entsprechend dem Durchbruch in der Montagefläche des Lead frames lassen sich vorteilhaft Standardmethoden wie Verquetschen, Kaltschweißen, Kleben oder Verlöten zum Verbinden des wärmeleitenden Körpers mit dem Leadframe als Träger einsetzen. With exact dimensions of the thermally conductive body according to the opening in the mounting surface of the lead frames are advantageously standard methods such as crimping, cold welding, gluing or soldering can be used for connecting the heat-conducting body with the lead frame as a substrate. Je nach Oberflächen material des wärmeleitenden Körpers kann der Chip einfach durch Kleben im Fall einer Silberoberfläche, durch Löten im Fall einer Nickeloberfläche oder durch eutektisches Bonden im Fall einer Gold oberfläche auf dem wärmeleitenden Körper montiert werden. Depending on the material surfaces of the thermally conductive body, the chip can easily be surface-mounted on the thermally conductive body by adhesive bonding in the case of a silver surface by brazing, in the case of a nickel surface, or by eutectic bonding in the case of gold. Eine Ummantelung des Chips erfolgt vorteilhaft mit Standardverfahren; A casing of the chip is advantageously carried out by standard methods; sie wird besonders günstig aus Plastik gepreßt. it is particularly favorable molded of plastic. Vorteilhaft in diesem Zusammenhang ist es, wenn der wärmeleitende Körper aus der Um mantelung des Chips herausragt, so daß eine direkte Wärmeankopplung an ein geeignetes Medium möglich ist. Advantageously, in this context it is, when the thermally conductive body from the order sheathing of the chip protrudes, so that a direct thermal coupling of a suitable medium is possible.

Für das elektronische Bauelement mit den kennzeichnenden Merkmalen des Anspruchs 10 ist es besonders vorteilhaft, den wärmeleitenden Körper aus einem Materialblock, beispielsweise aus einer Kupfer legierung oder Aluminium zu fertigen, da so der Wärmewiderstand vom Chip zu einem Kühlmedium besonders gering gehalten wird. For the electronic device having the characterizing features of claim 10 it is especially advantageous for the heat conducting body alloy of a block of material, for example made of a copper or finished aluminum, since then the thermal resistance is kept particularly low by the chip to a cooling medium. Weitere Maßnahmen zur Reduzierung des Wärmewiderstandes stellen das Ein bringen des wärmeleitenden Körpers in die Montagefläche des Lead frames und die direkte Montage des Chips auf dem wärmeleitenden Körper dar. Besonders vorteilhaft ist es schließlich, daß die Wärme direkt über den als Wärmesenke dienenden wärmeleitenden Körper, der aus der Ummantelung des Chips herausragt, an ein geeignetes Medium abführbar ist. Additional measures for reducing the thermal resistance make the A bring the thermally conductive body in the mounting surface of the lead frames and the direct mounting of the chips on the heat conducting body. Particularly advantageous is finally that the heat directly from the serving as a heat sink thermally conductive body, the protrudes from the casing of the chip on a suitable medium can be discharged. Diese Vorteile kommen besonders bei oberflächen montierbaren Leistungsbauelementen auf Metallkernleiterplatten zum Tragen, wobei die wärmeleitenden Körper durch geeignete Verbindungs prozesse in direktem Kontakt zum Metallkern der Leiterplatte stehen, der die Funktion eines Kühlkörpers erfüllt. These advantages are especially at surfaces mountable power components on metal core printed circuit boards for supporting, wherein the heat conductive body processes by suitable connection are in direct contact with the metal core of the circuit board, which functions as a heat sink.

Zeichnung drawing

Ein Ausführungsbeispiel der Erfindung ist in der Zeichnung dar gestellt und in der nachfolgenden Beschreibung näher erläutert. An embodiment of the invention is provided in the drawing is explained in greater detail in the following description. Es zeigen die Fig. 1a bis d den Aufbau eines Bauelements in ver schiedenen Stadien. In the drawings Figs. 1a to d the structure of a device in various stages ver.

Beschreibung des Ausführungsbeispiels Description of the embodiment

In Fig. 1a ist mit 10 ein Träger bezeichnet, der durch eine Einheit eines Leadframes, bestehend aus einem Rahmen 11 mit Anschlüssen 12 , einer Montagefläche 13 und Verbindungsstegen 14 , die eine Verbindung zwischen der Montagefläche 13 und dem Rahmen 11 herstellen, gebildet wird. In Fig. 1a a substrate is designated by 10, which is formed of a frame 11 with connections 12, a mounting surface 13 and connecting webs 14 which connect between the mounting surface 13 and the frame 11 by a unit of a leadframe consisting. In einem ersten Verfahrensschritt, der auch schon bei der Herstellung des Leadframes erfolgen kann, wird ein Durchbruch 20 in die Montagefläche 13 eingebracht. In a first process step, which also can already be carried in the production of the leadframe, a breakthrough is incorporated in the mounting surface 13 twentieth Dies kann entweder durch Aus stanzen, Freiätzen, Freierodieren oder eine andere geeignete Technik erfolgen. This can either punch through Off, carried etched free, free erosion or other suitable technique.

In Fig. 1b ist der so präparierte Leadframe dargestellt und ein wärmeleitender Körper 21 , dessen Oberfläche 25 so dimensioniert ist, daß er genau in den Durchbruch 20 hineinpaßt. In Fig. 1b of the thus prepared lead frame is shown, and a heat-conducting body 21 whose surface 25 is dimensioned such that it fits snugly in the opening 20. Der als Wärmesenke dienende wärmeleitende Körper 21 ist aus einem Materialblock gefertigt, seine Dicke beträgt ein Mehrfaches der Leadframestärke. Which serves as a heat sink thermally conductive body 21 is made of a block of material, its thickness is a multiple of the lead frame thickness. Besonders geeignet für Wärmesenken 21 sind Materialien mit hoher Wärmeleitfähigkeit wie z. Particularly suitable for heat sinks 21 are materials with high thermal conductivity such. B. Kupferlegierungen oder Aluminium. B. copper alloys or aluminum. Da ein Chip 30 auf der Oberfläche 25 des wärmeleitenden Körpers 21 montiert werden soll, kann dort zur besseren Haftung des Chips eine Silber- , Nickel- oder Goldschicht abgeschieden werden oder auch ein anderes Material, das entsprechend dem Montageverfahren gewählt wird. Since a chip is to be mounted on the surface 25 of the thermally conductive body 21. 30, there may be a silver, nickel or gold layer are deposited to improve the adhesion of the chips or another material which is selected according to the mounting method.

In Fig. 1c ist der Leadframe 10 dargestellt, nach dem Einbringen des wärmeleitenden Körpers 21 in den Durchbruch 20 . In Fig. 1c of the lead frame 10 is shown, after introducing the thermally conductive body 21 in the opening 20. Die Verbindung des wärmeleitenden Körpers 21 mit dem Leadframe 10 kann durch Verquetschen, Kaltschweißen, Kleben oder auch Verlöten an geeigneten Stellen 22 erfolgen. The connection of the heat-conducting body 21 with the lead frame 10 can be effected by crimping, cold welding, gluing or soldering at appropriate locations 22nd Je nach Beschaffenheit der Oberfläche 25 des wärmeleitenden Körpers 21 wird der Chip 30 direkt auf den wärme leitenden Körper 21 geklebt, im Falle einer Silberoberfläche 25 , gelötet, im Falle einer Nickeloberfläche 25 , oder eutektisch gebondet im Falle einer Goldoberfläche 25 . Depending on the nature of the surface 25 of the thermally conductive body 21 of the die 30 is bonded directly to the thermally conductive body 21, in the case of a silver surface 25, soldered, in the case of a nickel surface of 25, or eutectic bonded in the case of a gold surface 25th Der Erfindungsgegenstand beschränkt sich jedoch nicht auf diese Verfahren, sondern umfaßt alle geeigneten Montageverfahren für Chips. However, the subject invention is not limited to these processes, but includes all suitable assembly method for chips. Die Verbindung des Chips 30 mit den Anschlüssen 12 kann beispielsweise über Bonddrähte 32 hergestellt werden. The connection of the chip 30 to the terminals 12 may be prepared for example via bonding wires 32nd

In Fig. 1d ist dieser Aufbau dargestellt, nachdem der Chip 30 mit den Bonddrähten 32 in eine Ummantelung 35 so eingebracht wurde, daß eine Seite 26 des wärmeleitenden Körpers 21 aus der Ummantelung 35 herausragt. In Fig. 1d of this structure is shown after the chip 30 has been placed with the bonding wires 32 in a casing 35 so that one side 26 of the thermally conductive body 21 protrudes from the case 35. Diese Oberfläche 26 kann nun direkt mit einem geeigneten Kühlkörper in Kontakt gebracht werden, über den die Wärme abgeleitet wird. This surface 26 may be directly brought into contact with a suitable heat sink now over which the heat is dissipated. Dadurch wird der Wärmewiderstand zwischen Chip 30 und Kühl körper besonders gering gehalten. Thereby, the thermal resistance between chip 30 and cooling body is kept particularly low. Für bestimmte Anwendungen ist auch Luft als kühlendes Medium geeignet und kein zusätzlicher Kühlkörper erforderlich. For certain applications, air is suitable as a cooling medium and no additional heat sink required.

In dem in Fig. 1d dargestellten Beispiel sind die Anschlüsse 12 charakteristisch für ein oberflächenmontierbares Bauelement gebogen. In the example illustrated in Fig. 1d, the terminals 12 are bent characteristic for a surface-mountable component. Der erfindungsgemäße Aufbau eignet sich besonders für solche ober flächenmontierbaren Bauelemente im Zusammenhang mit Metallkern leiterplatten, wobei die Wärmesenke 21 durch einen geeigneten Prozeß mit dem Metallkern der Leiterplatte in Verbindung gebracht wird, der als Kühlkörper dient. The construction according to the invention is particularly suitable for such top surface mountable components in connection with a metal core printed circuit boards, wherein the heat sink is brought into compound 21 by an appropriate process to the metal core of the circuit board, which serves as a heat sink. Dies stellt eine besonders platzsparende Lösung der Wärmeableitung von Leistungsbauelementen auf Leiter platten dar. Das in den Fig. 1a bis 1d dargestellte Verfahren ist jedoch ebenso geeignet für Bauelemente, die durch die Leiterplatte durchgesteckt und von der Rückseite der Leiterplatte ausgehend fest gelötet werden. This represents a particularly space-saving solution to the heat dissipation of power components on printed circuit boards. However, the method shown in Figs. 1a to 1d is also suitable for devices that are inserted through the circuit board and starting firmly soldered from the back of the circuit board.

Claims (14)

  1. 1. Verfahren zur Herstellung von elektronischen Bauelementen, wobei mindestens ein Chip auf einen Träger aufgebracht und mit den nach außen führenden Anschlüssen verbunden wird und bei dem der mindestens eine Chip in Kontakt mit einem wärmeleitenden Körper gebracht wird, dadurch gekennzeichnet, daß der Träger ( 10 ) im Bereich der Montagefläche ( 13 ) des Chips ( 30 ) durchbrochen wird, daß in den Durchbruch ( 20 ) der wärmeleitende Körper ( 21 ) eingebracht und mit dem Träger ( 10 ) verbunden wird und daß der Chip ( 30 ) auf den wärmeleitenden Körper ( 21 ) aufgebracht wird. 1. A process for the production of electronic components, wherein at least one chip is applied to a support and connected to the lead-out terminals, and wherein the at least one chip is brought into contact with a heat conductive body, characterized in that the support (10 ) (in the region of the mounting surface 13) of the chip (30) is broken, that in the opening (20) of the heat-conducting body (21) is introduced and is connected (with the carrier 10), and that the chip (30) to the thermally conductive body (21) is applied.
  2. 2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß der Durchbruch ( 20 ) in die Montagefläche ( 13 ) durch Ausstanzen, Freiätzen oder Freierodieren eingebracht wird. 2. The method according to claim 1, characterized in that the opening (20) in the mounting surface (13) is introduced by stamping, etching free or free-eroding.
  3. 3. Verfahren nach einem der Ansprüche 1 oder 2, dadurch gekennzeich net, daß der Durchbruch ( 20 ) und der wärmeleitende Körper ( 21 ) so dimensioniert werden, daß der wärmeleitende Körper ( 21 ) genau in den Durchbruch ( 20 ) einpaßbar ist und daß der wärmeleitende Körper ( 21 ) dicker als der Träger ( 10 ) ist. 3. The method according to any one of claims 1 or 2, characterized in that the opening (20) and the heat-conducting body (21) are dimensioned so that the heat-conducting body (21) exactly in the aperture (20) is fittable, and in that gekennzeich net, is the heat-conducting body (21) is thicker than the support (10).
  4. 4. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß die Verbindung des wärmeleitenden Körpers ( 21 ) mit dem Träger ( 10 ) durch Verquetschen, Kaltschweißen, Kleben oder Verlöten erfolgt. 4. The method according to any one of the preceding claims, characterized in that the connection of the heat-conducting body (21) to the carrier takes place (10) by crimping, cold welding, gluing or soldering.
  5. 5. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß auf der in den Durchbruch ( 20 ) eingepaßten Oberfläche ( 25 ) des wärmeleitenden Körpers ( 21 ) mindestens eine Schicht Nickel und/oder Silber oder Gold abgeschieden wird. 5. The method according to any one of the preceding claims, characterized in that fitted on in the opening (20) surface (25) of the heat-conducting body (21) at least one layer of nickel and / or silver or gold is deposited.
  6. 6. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß der Chip ( 30 ) auf die in den Durchbruch ( 20 ) eingepaßte Oberfläche ( 25 ) des wärmeleitenden Körpers ( 21 ) geklebt, gelötet oder eutektisch gebondet wird. 6. The method according to any one of the preceding claims, characterized in that the chip (30) in the opening (20) fitted surface (25) of the heat-conducting body (21) glued or soldered is bonded eutectically.
  7. 7. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß der Chip ( 30 ) über Bonddrähte ( 32 ) mit den Anschlüssen ( 12 ) kontaktiert wird. 7. The method according to any one of the preceding claims, characterized in that the chip (30) via bonding wires (32) is contacted with the terminals (12).
  8. 8. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß der Chip ( 30 ) mit einem elektrisch nicht leitenden Material ummantelt wird. 8. The method according to any one of the preceding claims, characterized in that the chip (30) is coated with an electrically nonconductive material.
  9. 9. Verfahren nach Anspruch 8, dadurch gekennzeichnet, daß die Ummantelung ( 35 ) des Chips ( 30 ) aus Plastik gepreßt wird. 9. The method according to claim 8, characterized in that the sheathing (35) of the chip (30) made of plastic is pressed.
  10. 10. Elektronisches Bauelement mit mindestens einem auf einen Träger aufgebrachten Chip, der mit nach außen führenden Anschlüssen ver bunden ist und mit einem elektrisch nicht leitenden Material um mantelt ist und in dessen Ummantelung ein wärmeleitender Körper eingebracht ist, dadurch gekennzeichnet, daß der wärmeleitende Körper ( 21 ) in einen Durchbruch ( 20 ) des Trägers ( 10 ) eingebracht und mit dem Träger ( 10 ) verbunden ist und daß der Chip ( 30 ) direkt auf den wärmeleitenden Körper ( 21 ) aufgebracht ist. 10. An electronic component having at least one applied to a carrier chip which is ver with outwardly leading terminals connected and with an electrically non-conductive material is to mantelt and in whose casing a thermally conductive body is introduced, characterized in that the heat-conducting body ( 21) inserted into an opening (20) of the carrier (10) and (the carrier 10), and in that the chip (30) directly to the heat-conducting body (21) is applied.
  11. 11. Elektronisches Bauelement nach Anspruch 10, dadurch gekenn zeichnet, daß der wärmeleitende Körper ( 21 ) aus einer Kupferlegierung oder Aluminium gefertigt ist. 11. The electronic component according to claim 10, characterized in that the heat-conducting body (21) is made of a copper alloy or aluminum.
  12. 12. Elektronisches Bauelement nach Anspruch 10 oder 11, dadurch gekennzeichnet, daß der wärmeleitende Körper ( 21 ) aus der Um mantelung ( 35 ) herausragt und wärmeankoppelbar ist. 12. The electronic component according to claim 10 or 11, characterized in that the heat-conducting body (21) from the order sheathing (35) protrudes and is wärmeankoppelbar.
  13. 13. Elektronisches Bauelement nach Anspruch 12, dadurch gekenn zeichnet, daß die Unterseite ( 26 ) des herausragenden, wärme leitenden Körpers ( 21 ) mit den nach außen führenden Anschlüssen ( 12 ) in etwa fluchtet. 13. The electronic component according to claim 12, characterized in that the underside (26) of the protruding, thermally conductive body (21) with the outwardly leading terminals (12) is aligned approximately.
  14. 14. Elektronisches Bauelement nach einem der Ansprüche 10 bis 13, dadurch gekennzeichnet, daß es als oberflächenmontierbares Leistungsbauelement auf Metallkernleiterplatten verwendet wird. 14. Electronic device according to one of claims 10 to 13, characterized in that it is used as a surface-mountable power device on metal core printed circuit boards.
DE19904017697 1990-06-01 1990-06-01 Electronic device, method for its preparation and use Expired - Lifetime DE4017697C2 (en)

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DE19904017697 DE4017697C2 (en) 1990-06-01 1990-06-01 Electronic device, method for its preparation and use

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DE19904017697 DE4017697C2 (en) 1990-06-01 1990-06-01 Electronic device, method for its preparation and use
JP12894191A JP2971181B2 (en) 1990-06-01 1991-05-31 Electronic component and a method for manufacturing the electronic component
US07930474 US5202288A (en) 1990-06-01 1992-08-13 Method of manufacturing an electronic circuit component incorporating a heat sink
US08011215 US5345106A (en) 1990-06-01 1993-01-29 Electronic circuit component with heat sink mounted on a lead frame

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DE19645971A1 (en) * 1995-12-08 1997-06-12 Hewlett Packard Co Gehäusungssystem for field-effect transistors
EP0786807A1 (en) * 1996-01-25 1997-07-30 SGS-THOMSON MICROELECTRONICS S.r.l. Plastic body surface-mounting semiconductor power device having dimensional characteristics optimized for use of standard shipping and testing modes
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DE19625240A1 (en) * 1995-10-26 1997-04-30 Mitsubishi Electric Corp Semiconductor intelligent power module device for e.g. IGBT
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US6528868B1 (en) 1998-02-21 2003-03-04 Robert Bosch Gmbh Lead frame device and method for producing the same
WO1999044234A1 (en) * 1998-02-27 1999-09-02 Robert Bosch Gmbh Lead frame device and method for producing the same
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JPH04230056A (en) 1992-08-19 application
JP2971181B2 (en) 1999-11-02 grant

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