DE10234978A1 - Surface-mounted semiconductor component used in the production of luminescent diodes in mobile telephone keypads comprises a semiconductor chip, external electrical connections, and a chip casing - Google Patents
Surface-mounted semiconductor component used in the production of luminescent diodes in mobile telephone keypads comprises a semiconductor chip, external electrical connections, and a chip casing Download PDFInfo
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- DE10234978A1 DE10234978A1 DE10234978A DE10234978A DE10234978A1 DE 10234978 A1 DE10234978 A1 DE 10234978A1 DE 10234978 A DE10234978 A DE 10234978A DE 10234978 A DE10234978 A DE 10234978A DE 10234978 A1 DE10234978 A1 DE 10234978A1
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Abstract
Description
Oberflächenmontierbares Halbleiterbauelement und Verfahren zu dessen Herstellung Die Erfindung betrifft ein oberflächenmontierbares Halbleiterbauelement mit einem Halbleiterchip, mindestens zwei externen elektrischen Anschlüssen, die mit mindestens zwei elektrischen Kontakten des Halbleiterchips elektrisch leitend verbunden sind, und einer Chipumhüllung. Sie betrifft weiterhin ein Verfahren zum Herstellen eines solchen Halbleiterbauelements.Surface mount semiconductor device The invention relates to a surface-mountable Semiconductor component with a semiconductor chip, at least two external electrical connections, with at least two electrical contacts of the semiconductor chip are electrically connected, and a chip wrap. she furthermore relates to a method for producing such a semiconductor component.
Zur Erweiterung der Einsatzgebiete und zur Reduzierung der Herstellungskosten wird versucht, Halbleiterbauelemente in immer kleineren Baugrößen herzustellen. Sehr kleine Lumineszenzdioden sind beispielsweise für die Hintergrundbeleuchtung der Tasten von Mobiltelefonen erforderlich.To expand the areas of application and to reduce manufacturing costs, semiconductor devices are attempted to manufacture in ever smaller sizes. Very small luminescent diodes are used, for example, for the backlighting of the Mobile phone buttons required.
Inzwischen sind Lumineszenzdioden-Gehäuse mit
einer Stellfläche
der Abmessung 0402 (entsprechend 0,5 mm × 1,0 mm) und einer Bauteilhöhe von 400 μm – 600 μm verfügbar. Siehe
Datenblatt von FAIRCHILD SEMICONDUCTOR® zur Bauform QTLP690C-x. Das
entsprechende Bauteilkonzept ist in der Druckschrift
Eine weitere Verminderung der Bauteilhöhe gestaltet sich mit den herkömmlich verfügbaren Gehäusekonzepten äußerst schwierig. Der vorliegenden Erfindung liegt die Aufgabe zugrunde, ein Konzept für ein oberflächenmontierbares Halbleiterbauelement, insbesondere eine oberflächenmontierbare Miniatur-Lumineszenzdiode und/oder Photodiode zur Verfügung zu stellen, das eine weitergehende Verkleinerung der Baugröße erlaubt.Designed a further reduction in component height deal with the conventional available Housing concepts extremely difficult. The object of the present invention is a concept for a surface mount Semiconductor component, in particular a surface-mountable miniature luminescent diode and / or photodiode available to provide, which allows a further reduction in size.
Diese Aufgabe wird durch ein oberflächenmontierbares Halbleiterbauelement mit den Merkmalen des Patentanspruches 1 und durch ein Verfahren mit den Merkmalen des Patentanspruches 18 gelöst.This task is accomplished by a surface mount Semiconductor component with the features of claim 1 and solved by a method with the features of claim 18.
Vorteilhafte Weiterbildungen und Ausgestaltungen des Halbleiterbauelements und des Verfahrens gehen aus den Unteransprüchen hervor.Advantageous further training and Embodiments of the semiconductor device and the method go from the subclaims out.
Bei einem oberflächenmontierbaren Halbleiterbauelement gemäß der Erfindung sind die zwei externen elektrischen Anschlüsse an einer Folie ausgebildet, deren Dicke kleiner oder gleich 100 μm, insbesondere kleiner oder gleich 50 μm ist. Diese Folie besteht vorzugsweise aus Kunststoffmaterial, insbesondere aus PI oder PEN. Der Halbleiterchip ist an einer ersten Hauptfläche der Folie befestigt und die Chipumhüllung ist im wesentlichen ausschließlich auf der ersten Hauptfläche aufgebracht.For a surface mount semiconductor device according to the invention the two external electrical connections are formed on a film, whose thickness is less than or equal to 100 μm, in particular less than or equal to 50 μm is. This film is preferably made of plastic material, in particular from PI or PEN. The semiconductor chip is on a first main surface of the Foil attached and the chip wrap is essentially exclusive on the first main area applied.
Die Erfindung beruht insbesondere auf dem Gedanken, durch Montage des Halbleiterchips auf einer sehr dünnen Folie, auf der die externen elektrischen Anschlüsse ausgebildet sind, Bauformen mit sehr geringer Bauhöhe zu erzielen, die zudem in hoher Packungsdichte und somit mit geringen Produktionskosten hergestellt werden können.The invention is based in particular on the idea of mounting the semiconductor chip on a very thin Foil on which the external electrical connections are formed, designs with a very low height to achieve, which also in high packing density and thus with low Production costs can be produced.
Die erfindungsgemäße Bauform eignet sich bevorzugt zur Anwendung bei elektromagnetische Strahlung emittierenden und/oder empfangenden Bauelementen mit einem oder mehreren elektromagnetische Strahlung emittierenden und/oder empfangenden Halbleiterchips, insbesondere für Lumineszenzdioden-Bauelemente mit einer Gehäuse-Stellfläche der Abmessung 0402 (entsprechend 0,5 mm × 1,0 mm) oder kleiner und einer Bauteilhöhe von unter 400 μm, insbesondere unter 350 μm.The design according to the invention is preferably suitable for use with electromagnetic radiation emitting and / or receiving components with one or more electromagnetic Radiation-emitting and / or receiving semiconductor chips, in particular for luminescent diode components with a housing footprint of the Dimension 0402 (corresponding to 0.5 mm × 1.0 mm) or smaller and a component height of less than 400 μm, especially below 350 μm.
Bei Lumineszenzdioden-Bauelementen ist die Chipumhüllung aus einem elektromagnetische Strahlung durchlässigen, insbeson dere transparentem oder transluzentem Material gefertigt, insbesondere aus einem elektromagnetische Strahlung durchlässigen, vorzugsweise ungefülltem klaren Kunststoffmaterial.For luminescent diode components is the chip wrap made of an electromagnetic radiation permeable, in particular transparent or translucent material, in particular made of an electromagnetic Permeable to radiation, preferably unfilled clear plastic material.
Um ein mischfarbiges Licht abstrahlendes erfindungsgemäßes Lumineszenzdioden-Bauelement zur Verfügung zu stellen, kann die Chipumhüllung mit einem Leuchtstoff versetzt sein, der zumindest einen Teil der vom Lumineszenzdiodenchip ausgesandten elektromagnetischen Strahlung absorbiert und elektromagnetische Strahlung einer anderen Wellenlänge und Farbe als die absorbierte Strahlung emittiert.Luminescent diode component according to the invention emitting a mixed-colored light to disposal can put the chip wrap be mixed with a phosphor that at least part of the electromagnetic radiation emitted by the luminescence diode chip absorbs and electromagnetic radiation of a different wavelength and Color as the absorbed radiation emits.
Die Chipumhüllung ist bevorzugt mittels eines Spritzverfahrens hergestellt.The chip cladding is preferably by means of produced by a spraying process.
Die Folie einschließlich den externen elektrischen Anschlüssen ist auf der Seite, auf der die Halbleiterchips angeordnet werden vorzugsweise mit einer zur Chipumhüllung haftvermittelnden Deckschicht beschichtet, die an den Chiptmontagestellen und an den Drahtmontagestellen Montagefenster aufweist, in denen keine Deckschicht vorhanden ist. Dadurch wird vorteilhafterweise erreicht, dass eine unzulässig große Dejustage der Chipmontageanlage und/oder Drahtmontageanlage dadurch schnell erkennbar ist, dass die Halbleiterchips bzw. Anschlußdrähte nach deren Montage auf der Folie nicht haften. Dies ist um so mehr von Bedeutung je kleiner die Bauform ist, denn erstens wird die Zuverlässigkeit der Bauelemente von einer Dejustage der Chipmontage um so mehr beeinträchtigt, je geringer das Volumen der Chipumhüllung ist und zweitens ist die Ausschußmenge bei einer nicht sofort erkannten Dejustage aufgrund der hohen Packungsdichte der Bauelemente und der damit verbundenen großen Menge an Bauelementen pro Längeneinheit auf einem Montageband sehr hoch.The film including the external electrical connections is on the side on which the semiconductor chips are arranged preferably with a cover layer that promotes adhesion to the chip encapsulation coated on the chip assembly points and on the wire assembly points Has assembly window in which there is no cover layer. Thereby is advantageously achieved that an impermissibly large misalignment the chip assembly system and / or wire assembly system quickly it can be seen that the semiconductor chips or connecting wires after their assembly does not adhere to the film. This is all the more of Significance the smaller the design, because firstly the reliability of the Components affected by misalignment of the chip assembly all the more the smaller the volume of the chip wrap is and secondly the reject amount if misalignment is not immediately recognized due to the high packing density of the components and the associated large amount of components per unit of length very high on an assembly line.
Bei einer bevorzugten Ausführungsform des Halbleiterbauelements sind zwei externe elektrische Anschlüsse jeweils von einem ersten elektrischen Anschlußbereich auf der ersten Hauptfläche der Folie, einem zweiten elektrischen Anschlußbereich auf der zweiten Hauptfläche der Folie und mindestens einer elektrischen Durchführung durch die Folie, die den ersten Anschlußbereich mit dem zugehörigen zweiten Anschlußbereich elektrisch verbindet ausgebildet. Dies ermöglicht vorteilhafterweise eine technisch einfache Herstellung der externen elektrischen Anschlüsse, die zu keiner Vergrößerung der Stellfläche des Bauelements führen.In a preferred embodiment of the semiconductor component, two external electrical connections are in each case from a first electrical connection area on the first main surface of the film, a second electrical connection area the second main surface of the film and at least one electrical feedthrough through the film which electrically connects the first connection region to the associated second connection region. This advantageously enables a technically simple production of the external electrical connections, which do not lead to an increase in the footprint of the component.
Bevorzugt sind die elektrischen Anschlußbereiche mittels strukturierter Metallschichten auf der Folie hergestellt. Zur Strukturierung der Metallschichten können herkömmliche geeignete Verfahren eingesetzt werden.The electrical connection areas are preferred produced by means of structured metal layers on the film. Conventional suitable methods can be used to structure the metal layers be used.
Bei einer zweckmäßigen Ausgestaltung sind die Metallschichten mehrschichtig aufgebaut und weisen vorzugsweise gesehen von der Folie eine erste Schicht aus Kupfer oder einer Kupferbasislegierung, die für die elektrische Leitung der Metallschicht zuständig ist, eine zweite Schicht aus Nickel oder einer Nickelbasislegierung, die eine Sperrschicht darstellt, und eine dritte Schicht aus Gold oder einer Goldbasislegierung auf, die zur Verbesserung der Bond- und Lötbarkeit der Metallschicht dient.In an appropriate embodiment, the Metal layers have a multilayer structure and preferably have seen from the film a first layer of copper or a copper-based alloy, the for the electrical conduction of the metal layer is responsible, a second layer Made of nickel or a nickel-based alloy that has a barrier layer and a third layer of gold or a gold-based alloy on, which serves to improve the bondability and solderability of the metal layer.
Die erste Schicht weist zweckmäßigerweise eine Dicke zwischen einschließlich 5 μm und einschließlich 25 μm auf.The first layer expediently has one Thickness between inclusive 5 μm and including 25 μm.
Um eine ausreichende Wärmeableitung vom Halbleiterchip zu gewährleisten ist dieser auf einem der beiden ersten elektrischen Anschlußbereiche mittels eines thermisch gut leitenden Verbindungsmittels befestigt und ist der entsprechende externe elektrische Anschluß derart ausgebildet, dass er einen hinreichend guten thermischen Anschluß für den Halbleiterchip darstellt. Was bedeutet, dass insbesondere seine Materialzusammensetzung, seine Schichtdicke und die elektrische Durchführung durch die Folie auf gute thermische Leitfähigkeit ausgelegt sind.In order to ensure adequate heat dissipation from the semiconductor chip, it is on one of the first two electrical connection areas attached by means of a thermally highly conductive connecting means and the corresponding external electrical connection is designed such that it represents a sufficiently good thermal connection for the semiconductor chip. This means that in particular its material composition, its layer thickness and the electrical implementation through the film are designed for good thermal conductivity.
Die Chipumhüllung ist vorzugsweise in einem Mittenbereich über dem Halbleiterchip und ggf. einem oder mehreren Bonddrähten zum Halbleiterchip, senkrecht zur Folie eine größere Dicke auf als in einem den Mittenbereich umlaufenden Randbereich. Dadurch ist vorteilhafterweise das Volumen der Chipumhüllung reduziert, wodurch einer Wölbung der Folie während des Herstellverfahrens aufgrund von unterschiedlichen thermischen Ausdehnungen von Folie und Chipumhüllung entgegengewirkt werden kann.The chip casing is preferably in one Center area above the semiconductor chip and possibly one or more bonding wires for Semiconductor chip, a greater thickness perpendicular to the film than in one the peripheral area surrounding the central area. This is advantageous the volume of the chip wrap reduced, causing a curvature of the Slide during of the manufacturing process due to different thermal Expansion of the film and the chip casing can be counteracted can.
Bei einer bevorzugten Ausführungsform des Halbleiterbauelements, die einerseits eine sichere Bondbarkeit des Halbleiterchips und von Bonddrähten auf den jeweils zugeordneten externen elektrischen Anschlüssen gewährleisten und andererseits keine oder nahezu keine Vergrößerung der Stellfläche des Gehäuses bewirkt, weisen die einander gegenüberliegenden Enden der externen elektrischen Anschlüsse versetzt zueinander jeweils vorspringende Bereiche auf, in denen die elektrischen Durchführungen durch die Folie angeordnet sind. Vorzugsweise verlaufen die einander gegenüberliegenden Enden der externen elektrischen Anschlüsse derart S-artig, dass die vorspringenden Teile überlappen.In a preferred embodiment of the semiconductor component, on the one hand, a secure bondability of the semiconductor chip and of bond wires on the respectively assigned external electrical connections guarantee and on the other hand no or almost no increase in the footprint of the housing causes the opposite ends of the external electrical connections offset each other from projecting areas in which the electrical feedthroughs arranged through the film. They preferably run one another opposite Ends of the external electrical connections so S-like that the projecting parts overlap.
Bei dem erfindungsgemäßen Verfahren zum gleichzeitigen Herstellen einer Vielzahl von oberflächenmontierbaren Halbleiterbauelementen der eingangs genannten Art wird zunächst ein Folienstreifen hergestellt, der beidseitig derart strukturierte und durch den Folienstreifen durchkontaktierte elektrisch leitende Schichten aufweist, dass auf ihm mindestens ein Feld aus einer Vielzahl von nebeneinander angeordneten, die externen elektrischen Anschlüsse aufweisenden Bauelementbereichen ausgebildet ist. Jeder der Bauelementbereiche umfasst sämtliche Strukturen der elektrisch leitenden Schichten für alle externen elektrischen Anschlüsse des späteren Halbleiterbauelements. Auf jeden der Bauelementbereiche wird nachfolgend mindestens ein Halbleiterchip aufgebracht und elektrisch mit den externen elektrischen Anschlüssen verbun den. Danach wird das Feldes in eine Spritzform eingelegt, in der für das gesamte Feld eine einzige sämtliche Halbleiterchips des Feldes überspannende und dort im wesentlichen ausschließlich auf der Seite der Halbleiterchips hohlraumbildende Kavität vorgesehen ist. Das Einspritzen von Umhüllmaterial in die Kavität erfolgt vorzugsweise von der Seite und insbesondere über Filmanguß. Nachdem dann das Umhüllmaterial zumindest teilweise ausgehärtet ist wird das Feld aus der Spritzform herausgenommen und mittels Durchtrennen des Chipumhüllungsmaterials und des Folienstreifens mit den strukturierten elektrisch leitenden Schichten zwischen den Bauelementbereichen in einzelne Halbleiterbauelemente vereinzelt.In the method according to the invention for the simultaneous production of a large number of surface-mountable Semiconductor components of the type mentioned at the beginning are first Film strips made, the structured on both sides and electrically conductive through-plated through the film strip Layers that have at least one field from a variety on it of juxtaposed, having the external electrical connections Component areas is formed. Each of the device areas includes all structures of electrically conductive layers for all external electrical connections of the later semiconductor device. At least one is subsequently added to each of the component areas Semiconductor chip applied and electrical with the external electrical connections connected. Then the field is placed in an injection mold, in the for the entire field a single all Field spanning semiconductor chips and there essentially only on the side of the semiconductor chips cavity-forming cavity is provided. Enveloping material is injected into the cavity preferably from the side and in particular via film sprue. After this then the wrapping material at least partially cured the field is removed from the injection mold and by means of Cutting the chip wrap material and the film strip with the structured electrically conductive layers between the component areas into individual semiconductor components sporadically.
Um einer zu starken Verwölbung des Feldes aufgrund von unterschiedlichen thermischen Ausdehnungen von Umhüllmaterial und Folie entgegenzuwirken weist die Kavität eine Vielzahl von Ausnehmungen auf, die jeweils einen oder mehrere Halbleiterchip überspannt. Auf diese Weise wird das Volumen an Umhüllmaterial reduziert, indem die Dicke des Umhüllmaterials in Bereichen, wo dies zulässig ist, gegenüber der Dicke im Bereich von Halbleiterchips und ggf. einem oder mehreren Bonddrähten zum Halbleiterchip verringert ist.To avoid excessive warping of the Field due to different thermal expansions of wrapping material To counteract the film, the cavity has a large number of recesses on, each spanning one or more semiconductor chips. In this way, the volume of wrapping material is reduced by the thickness of the wrapping material in areas where this is permitted across from the thickness in the area of semiconductor chips and possibly one or more Bond wires for Semiconductor chip is reduced.
Vorzugsweise ist über jedem Halbleiterchip des Feldes eine separate Ausnehmung vorgesehen, derart, dass das Umhüllmaterial nach dem Spritzprozess eine Vielzahl von nebeneinander angeordneten Erhebungen aufweist, insbesondere eine einer Schokoladentafel ähnliche Struktur aufweist.Preferably, the over each semiconductor chip Field provided a separate recess, such that the wrapping material after the spraying process, a large number of elevations arranged side by side has, in particular similar to a chocolate bar Has structure.
Das Vereinzeln des Feldes erfolgt vorteilhafterweise mittels Durchtrennen des Umhüllmaterials und des Folienstreifens mit den strukturierten elektrisch leitenden Schichten in den Gräben zwischen den Erhebungen.The field is separated advantageously by cutting through the wrapping material and the film strip with the structured electrically conductive layers in the trenches between the Surveys.
Zweckmäßigerweise wird vor dem Einlegen des Feldes in die Spritzform auf die Folie und/oder die elektrisch leitenden Schichten ein Haftvermittler aufgebracht, der die Haftung des Umhüllmaterials auf der Folie und/oder den elektrisch leitenden Schichten verbessert. Hierzu wird vorzugsweise ein PI-Decklack verwendet.Advantageously, an adhesion promoter is applied to the film and / or the electrically conductive layers before inserting the field into the injection mold, which promotes the adhesion of the wrapping material improved on the film and / or the electrically conductive layers. A PI topcoat is preferably used for this.
Der Haftvermittler wird vorzugsweise jeweils auf den gesamten Bauelementbereich aufgebracht, ausser auf die Chipmontagebereiche, auf denen die Halbleiterchips befestigt werden, und ggf. auf die Drahtmontagebereiche, auf denen Anschlußdrähte befestigt werden. In diesen Bereichen weist der Haftvermittler Kontaktierungsfenster auf. Eine derartige Haftvermittlerschicht bringt insbesondere die weiter oben in Verbindung mit der Beschreibung des Halbleiterbauelements erläuterten Vorteile hinsichtlich Erkennung einer Dejustage der Produktionsanlage mit sich.The coupling agent is preferred applied to the entire component area, except on the chip mounting areas on which the semiconductor chips are attached and, if necessary, on the wire assembly areas on which connecting wires are fastened become. The bonding agent has contacting windows in these areas on. Such an adhesion promoter layer in particular brings above in connection with the description of the semiconductor device explained Advantages regarding detection of misalignment of the production plant with himself.
Hinsichtlich einer technisch einfachen Handhabung der Halbleiterbauelemente nach dem Vereinzeln wird der Folienstreifen mit den strukturierten elektrisch leitenden Schichten vor dem Einlegen in die Spritzform mit dessen Rückseite auf eine Hilfsfolie auflaminiert wird.Regarding a technically simple Handling of the semiconductor components after the separation is the Film strips with the structured electrically conductive layers before inserting it into the injection mold with its back on an auxiliary film is laminated on.
Die Hilfsfolie weist zweckmäßigerweise einen ähnlichen oder einen größeren thermischen Ausdehnungskoeffizienten auf als das Umhüllmaterial, derart, dass sie einer Verwölbung des Feldes aufgrund einer gegenüber dem Folienstreifen stärkeren Schrumpfung des Umhüllmaterials während dessen Aushärtung und/oder Abkühlung nach dem Umspritzen des Feldes weitestmöglich entgegenwirkt.The auxiliary film expediently has a similar one or a larger thermal Expansion coefficient on than the wrapping material, such that they a warp of the field due to one opposite the film strip more shrinkage of the wrapping material while its curing and / or cooling counteracts as much as possible after the encapsulation of the field.
Zum grundsätzlich gleichen Zweck kann der Folienstreifen außerhalb der Felder Bohrungen, Durchbrüche und/oder Schlitze zur Verringerung von mechanischen Verspannungen aufgrund von unterschiedlichen thermischen Ausdehnungen und/oder Materialschrumpfungen aufweisen.Can basically for the same purpose the film strip outside drilling, breakthroughs in the fields and / or slots to reduce mechanical tension due to different thermal expansions and / or material shrinkage exhibit.
Alternativ zu den oben beschriebenen Mitteln zur Verminderung der Verwölbung des Feldes kann der Folienstreifen aus einem Material bestehen, das einen ähnlichen thermischen Ausdehnungskoeffizienten aufweist, wie das Umhüllmaterial.As an alternative to those described above The film strip can be used to reduce the warping of the field are made of a material that has a similar coefficient of thermal expansion has, like the wrapping material.
Als weitere alternative oder zusätzliche Maßnahme kann eine bombierte Spritzform verwendet werden, in der das Feld während des Einspritzens der Umhüllmasse in die Kavität gesehen von der Seite, auf der sich später das Material mit dem größeren thermischen Ausdehnungskoeffizienten befindet, konvex gekrümmt ist.As another alternative or additional measure a convex injection mold can be used in the field while of the coating mass injection into the cavity seen from the side on which later the material with the larger thermal Expansion coefficient is located, is convexly curved.
Um ein elektrisches und/oder optisches Testen der Halbleiterbauelemente zu ermöglichen, wird das Feld vor dem Vereinzeln mit der Umhüllungsseite auf eine Folie aufgebracht und nachfolgend ggf. die Hilfsfolie von der Rückseite der Folie abgezogen. Für den Fall, dass eine optische Vermessung des Halbleiterbauelements erforderlich ist, ist diese Folie vorzugsweise für elektromagnetische Strahlung durchlässig und erfolgt die Messung durch die Folie hindurch.An electrical and / or optical one To enable testing of semiconductor devices, the field is presented separating with the wrapping side applied a film and then, if necessary, the auxiliary film from the back peeled off the film. For the Case that an optical measurement of the semiconductor device is required , this film is preferably for electromagnetic radiation permeable and the measurement is made through the film.
Das Vereinzeln des Feldes erfolgt vorzugsweise mittels Sägen, Lasertrennen und/oder Wasserstrahlschneiden.The field is separated preferably using saws, Laser cutting and / or water jet cutting.
Durch die Verwendung der strukturiert elektrisch leitfähigen flexiblen Folie können alle Prozeßschritte des erfindungsgemäßen Verfahrens Reel-to-Reel (von einer Abwickel- zu einer Aufwickelhaspel) durchgeführt werden, was den Handhabungsaufwand bei der Herstellung minimiert.By using the structured electrically conductive flexible film can all process steps of the method according to the invention Reel-to-reel (from a decoiler to a decoiler), which minimizes the handling effort during production.
Darüber hinaus besteht bei dem beschriebenen Konzept die Möglichkeit, auf das Taping der Bauteile zu verzichten. Falls gewünscht, kann eine Mehrzahl zusammengehöriger Bauteile nach einem Chiptest auf dem flexiblen Rahmen zusammen mit einer Wafermap ausgeliefert werden. Alternativ können die Bauteile nach dem Chiptest wie bisher vereinzelt, getaped und ausgeliefert werden.In addition, the described concept the possibility to avoid taping the components. If desired, can a plurality of related ones Components after a chip test on the flexible frame together with be delivered to a wafer map. Alternatively, the components after the Chip test can be isolated, taped and delivered as before.
Weitere Vorteile, Weiterbildungen
und Ausgestaltungen des Halbleiterbauelement und des Verfahrens
ergeben sich aus dem im Folgenden in Verbindung mit den
Es zeigen:Show it:
In den Figuren sind gleiche oder gleichwirkende Bestandteile jeweils mit den gleichen Bezugszeichen versehen. Es sind je weils nur diejenigen Bestandteile beschrieben, die zum Verständnis der Erfindung wesentlich sind.In the figures, the same or Identical components with the same reference numerals Mistake. Only those components are described in each case, those for understanding the invention are essential.
Das in
Bei diesem sind zwei externen elektrische Anschlüsse
Die Chipumhüllung
Die zwei externen elektrischen Anschlüsse
Die metallisierten Bereiche
Die Dicke der elektrischen Leitungsschicht liegt zwischen einschließlich 5 und einschließlich 25 μm.The thickness of the electrical line layer is between including 5 and including 25 μm.
Der Leuchtdiodenchip
Die Chipumhüllung
Die lateralen Abmessungen des oberflächenmontierbaren Leuchtdiodenbauelements betragen maximal 0,5 mm × 1 mm und die Bauteilhöhe ist kleiner als oder gleich 0,4 mm, vorzugsweise kleiner oder gleich 0,35 μm.The lateral dimensions of the surface mount Light-emitting diode components are a maximum of 0.5 mm × 1 mm and the component height is smaller than or equal to 0.4 mm, preferably less than or equal to 0.35 μm.
Zur Realisierung eines mischfarbiges Licht emittierenden Leuchtdiodenbauelements oder zur Umwandlung eines UV-Anteils der vom Leuchtdiodenchip emittierten Strahlung in sichtbares Licht, kann das Umhüllmaterial mit einem Leuchtstoff versetzt sein, der zumindest einen Teil der vom Lumineszenzdiodenchip ausgesandten elektromagnetischen Strahlung absorbiert und elektromagnetische Strahlung einer größeren Wellenlänge als die absorbierte Strahlung emittiert.To realize a mixed color Light-emitting LED component or for conversion a UV component of the radiation emitted by the LED chip in visible light, the wrapping material can be coated with a phosphor be offset, the at least part of that of the LED chip emitted electromagnetic radiation and absorbs electromagnetic radiation a longer wavelength than the absorbed radiation is emitted.
Wie unter anderem aus der
Bei dem Verfahren zum gleichzeitigen
Herstellen einer Vielzahl von oberflächenmontierbaren Halbleiterbauelementen
gemäß dem Ausführungsbeispiel
wird zunächst
ein Folienstreifen
In jedem Bauelementbereich
Auf jeden der Bauelementbereiche
wird ein Leuchtdiodenchip
In einem dieser Chipmontage- und
-anschlußprozedur
nachgeordnetem Schritt wird das mit den Leuchtdiodenchips
Die Kavität
Der Vorteil einer solchen Ausgestaltung ist im allgemeinen Teil der Beschreibung angegeben. Sie vermindert die Verwöl bung des Feldes während des Aushärtens des Umhüllmaterials.The advantage of such a design is given in the general part of the description. It diminishes the warp of the field during the curing of the wrapping material.
Nach einem zumindest teilweisen Aushärten des
Umhüllmaterials
Das Vereinzeln des Feldes
Zur Verbesserung der Haftung zwischen dem
Umhüllmaterial
In einer vorteilhaften Ausgestaltung
des Verfahrens wird der Folienstreifen
Eine weitere Maßnahme, der Verwölbung des
Feldes aufgrund von mechanischen Verspannungen wegen unterschiedlichen
thermischen Ausdehnungen und/oder Materialschrumpfungen von Umhüllmaterial
und Folienstreifen entgegenzuwirken ist die Ausbildung von Bohrungen,
Durchbrüchen und/oder
Schlitzen
Alternativ oder zusätzlich zu
den oben beschriebenen Maßnahmen
kann ein Folienstreifen
Weiterhin alternativ oder zusätzlich kann
aus dem gleichen Grund eine bombierte Spritzform verwendet wird,
in der das Feld
Die Erläuterung der Erfindung an Hand des Ausführungsbeispieles ist selbstverständlich nicht als Beschränkung der Erfindung auf dieses zu verstehen. Vielmehr sind die im vorstehenden allgemeinen Teil der Beschreibung, in der Zeichnung sowie in den Ansprüchen offenbarten Merkmale der Erfindung sowohl einzeln als auch in dem Fachmann als geeignet erscheinender Kombination für die Verwirklichung der Erfindung wesentlich.The explanation of the invention on hand of the embodiment is self-evident not as a limitation the invention to understand this. Rather, the above are general part of the description, in the drawing and in the claims disclosed Features of the invention both individually and in the expert as suitable combination for the implementation of the invention essential.
Claims (31)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
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DE10234978A DE10234978A1 (en) | 2002-07-31 | 2002-07-31 | Surface-mounted semiconductor component used in the production of luminescent diodes in mobile telephone keypads comprises a semiconductor chip, external electrical connections, and a chip casing |
JP2004528349A JP2005535144A (en) | 2002-07-31 | 2003-07-07 | Surface-mountable semiconductor device and method for manufacturing the semiconductor device |
EP03787632A EP1525619A1 (en) | 2002-07-31 | 2003-07-07 | Surface-mounted semiconductor component and method for the production thereof |
PCT/DE2003/002259 WO2004017407A1 (en) | 2002-07-31 | 2003-07-07 | Surface-mounted semiconductor component and method for the production thereof |
CNA038184087A CN1672260A (en) | 2002-07-31 | 2003-07-07 | Surface-mountable semiconductor component and method for producing it |
TW092120211A TWI227569B (en) | 2002-07-31 | 2003-07-24 | Surface-mountable semiconductor component and its production method |
US11/052,712 US7199470B2 (en) | 2002-07-31 | 2005-01-31 | Surface-mountable semiconductor component and method for producing it |
US11/731,911 US7488622B2 (en) | 2002-07-31 | 2007-04-02 | Method for producing a surface-mountable semiconductor component |
Applications Claiming Priority (1)
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DE10234978A DE10234978A1 (en) | 2002-07-31 | 2002-07-31 | Surface-mounted semiconductor component used in the production of luminescent diodes in mobile telephone keypads comprises a semiconductor chip, external electrical connections, and a chip casing |
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DE10234978A Withdrawn DE10234978A1 (en) | 2002-07-31 | 2002-07-31 | Surface-mounted semiconductor component used in the production of luminescent diodes in mobile telephone keypads comprises a semiconductor chip, external electrical connections, and a chip casing |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6995029B2 (en) | 2002-08-05 | 2006-02-07 | Osram Opta Semiconductors Gmbh | Fabricating surface mountable semiconductor components with leadframe strips |
WO2008014750A2 (en) | 2006-08-04 | 2008-02-07 | Osram Opto Semiconductors Gmbh | Thin-film semiconductor component and component assembly |
DE202008008414U1 (en) | 2008-06-25 | 2008-08-21 | Microelectronic Packaging Dresden Gmbh | Photodiode module |
DE102008011809A1 (en) | 2007-12-20 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
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US8058147B2 (en) | 2005-08-05 | 2011-11-15 | Osram Opto Semiconductors Gmbh | Method for producing semiconductor components and thin-film semiconductor component |
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DE102013202542A1 (en) | 2013-02-18 | 2014-09-18 | Heraeus Materials Technology Gmbh & Co. Kg | Substrate for producing an LED and method for its production |
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Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6995029B2 (en) | 2002-08-05 | 2006-02-07 | Osram Opta Semiconductors Gmbh | Fabricating surface mountable semiconductor components with leadframe strips |
US7695990B2 (en) | 2002-08-05 | 2010-04-13 | Osram Opto Semiconductors Gmbh | Fabricating surface mountable semiconductor components with leadframe strips |
US8058147B2 (en) | 2005-08-05 | 2011-11-15 | Osram Opto Semiconductors Gmbh | Method for producing semiconductor components and thin-film semiconductor component |
US8872330B2 (en) | 2006-08-04 | 2014-10-28 | Osram Opto Semiconductors Gmbh | Thin-film semiconductor component and component assembly |
WO2008014750A2 (en) | 2006-08-04 | 2008-02-07 | Osram Opto Semiconductors Gmbh | Thin-film semiconductor component and component assembly |
US9142720B2 (en) | 2007-01-29 | 2015-09-22 | Osram Opto Semiconductors Gmbh | Thin-film light emitting diode chip and method for producing a thin-film light emitting diode chip |
DE102008064826B3 (en) * | 2007-06-26 | 2015-05-28 | Infineon Technologies Ag | Semiconductor device and method of making the same |
DE102008023127B4 (en) * | 2007-06-26 | 2014-11-13 | Infineon Technologies Ag | Semiconductor device and method of manufacture |
DE102008011809A1 (en) | 2007-12-20 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
US8476667B2 (en) | 2007-12-20 | 2013-07-02 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
DE102008021622A1 (en) * | 2008-04-30 | 2009-11-05 | Osram Opto Semiconductors Gmbh | Carrier unit for optoelectronic component, has carrier with main face for attachment of electronic component, and conducting framework, which is fastened on main face of carrier |
DE202008008414U1 (en) | 2008-06-25 | 2008-08-21 | Microelectronic Packaging Dresden Gmbh | Photodiode module |
CN103222079A (en) * | 2010-11-19 | 2013-07-24 | 欧司朗光电半导体有限公司 | Opto-electronic semiconductor component |
US8878170B2 (en) | 2010-11-19 | 2014-11-04 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor device |
WO2012065882A1 (en) * | 2010-11-19 | 2012-05-24 | Osram Opto Semiconductors Gmbh | Opto-electronic semiconductor component |
DE102011056708A1 (en) * | 2011-12-20 | 2013-06-20 | Osram Opto Semiconductors Gmbh | Process for the production of optoelectronic semiconductor components, lead frame composite and optoelectronic semiconductor component |
US9231179B2 (en) | 2011-12-20 | 2016-01-05 | Osram Opto Semiconductors Gmbh | Method for producing optoelectronic semiconductor components, lead frame composite, and optoelectronic semiconductor component |
DE102013202542A1 (en) | 2013-02-18 | 2014-09-18 | Heraeus Materials Technology Gmbh & Co. Kg | Substrate for producing an LED and method for its production |
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