DE3880442D1 - Epitaxiale scheibe. - Google Patents

Epitaxiale scheibe.

Info

Publication number
DE3880442D1
DE3880442D1 DE8888310712T DE3880442T DE3880442D1 DE 3880442 D1 DE3880442 D1 DE 3880442D1 DE 8888310712 T DE8888310712 T DE 8888310712T DE 3880442 T DE3880442 T DE 3880442T DE 3880442 D1 DE3880442 D1 DE 3880442D1
Authority
DE
Germany
Prior art keywords
epitaxial
disc
epitaxial disc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8888310712T
Other languages
English (en)
Other versions
DE3880442T2 (de
Inventor
Tadashige Sato
Yasuji Kobashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Kasei Corp
Original Assignee
Mitsubishi Kasei Polytec Co
Mitsubishi Kasei Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Kasei Polytec Co, Mitsubishi Kasei Corp filed Critical Mitsubishi Kasei Polytec Co
Application granted granted Critical
Publication of DE3880442D1 publication Critical patent/DE3880442D1/de
Publication of DE3880442T2 publication Critical patent/DE3880442T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F01—MACHINES OR ENGINES IN GENERAL; ENGINE PLANTS IN GENERAL; STEAM ENGINES
    • F01N—GAS-FLOW SILENCERS OR EXHAUST APPARATUS FOR MACHINES OR ENGINES IN GENERAL; GAS-FLOW SILENCERS OR EXHAUST APPARATUS FOR INTERNAL COMBUSTION ENGINES
    • F01N11/00—Monitoring or diagnostic devices for exhaust-gas treatment apparatus, e.g. for catalytic activity
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F01—MACHINES OR ENGINES IN GENERAL; ENGINE PLANTS IN GENERAL; STEAM ENGINES
    • F01N—GAS-FLOW SILENCERS OR EXHAUST APPARATUS FOR MACHINES OR ENGINES IN GENERAL; GAS-FLOW SILENCERS OR EXHAUST APPARATUS FOR INTERNAL COMBUSTION ENGINES
    • F01N3/00—Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust
    • F01N3/08—Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust for rendering innocuous
    • F01N3/0807—Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust for rendering innocuous by using absorbents or adsorbents
    • F01N3/0828—Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust for rendering innocuous by using absorbents or adsorbents characterised by the absorbed or adsorbed substances
    • F01N3/0842—Nitrogen oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F01—MACHINES OR ENGINES IN GENERAL; ENGINE PLANTS IN GENERAL; STEAM ENGINES
    • F01N—GAS-FLOW SILENCERS OR EXHAUST APPARATUS FOR MACHINES OR ENGINES IN GENERAL; GAS-FLOW SILENCERS OR EXHAUST APPARATUS FOR INTERNAL COMBUSTION ENGINES
    • F01N2550/00—Monitoring or diagnosing the deterioration of exhaust systems
    • F01N2550/03—Monitoring or diagnosing the deterioration of exhaust systems of sorbing activity of adsorbents or absorbents
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
    • Y02T10/00—Road transport of goods or passengers
    • Y02T10/10—Internal combustion engine [ICE] based vehicles
    • Y02T10/40—Engine management systems
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/936—Graded energy gap

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Combustion & Propulsion (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE8888310712T 1987-11-13 1988-11-14 Epitaxiale scheibe. Expired - Lifetime DE3880442T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28705487A JP2579326B2 (ja) 1987-11-13 1987-11-13 エピタキシャル・ウエハ及び発光ダイオード

Publications (2)

Publication Number Publication Date
DE3880442D1 true DE3880442D1 (de) 1993-05-27
DE3880442T2 DE3880442T2 (de) 1993-08-05

Family

ID=17712456

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888310712T Expired - Lifetime DE3880442T2 (de) 1987-11-13 1988-11-14 Epitaxiale scheibe.

Country Status (5)

Country Link
US (1) US4946801A (de)
EP (1) EP0317228B1 (de)
JP (1) JP2579326B2 (de)
KR (1) KR0135610B1 (de)
DE (1) DE3880442T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2629475A1 (fr) * 1988-03-29 1989-10-06 Radiotechnique Compelec Procede d'obtention d'une couche monocristalline ternaire hetero-epitaxiee sur une couche binaire et creuset pour sa mise en oeuvre
JPH0712094B2 (ja) * 1988-10-19 1995-02-08 信越半導体株式会社 発光半導体素子用エピタキシャルウェーハの製造方法
US5103271A (en) * 1989-09-28 1992-04-07 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method of fabricating the same
US5235194A (en) * 1989-09-28 1993-08-10 Kabushiki Kaisha Toshiba Semiconductor light-emitting device with InGaAlP
DE19630689C1 (de) * 1996-07-30 1998-01-15 Telefunken Microelectron Halbleiteranordnung und Verfahren zum Herstellen
GB2318680B (en) * 1996-10-24 2001-11-07 Univ Surrey Optoelectronic semiconductor devices
TW456058B (en) * 2000-08-10 2001-09-21 United Epitaxy Co Ltd Light emitting diode and the manufacturing method thereof
KR20190063727A (ko) 2017-11-30 2019-06-10 ㈜제트웨이크 서퍼보드의 배터리 케이스 장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4866384A (de) * 1971-12-14 1973-09-11
FR2251104B1 (de) * 1973-11-14 1978-08-18 Siemens Ag
JPS5228888A (en) * 1975-08-29 1977-03-04 Semiconductor Res Found Emission semiconductor device
US4354140A (en) * 1979-05-28 1982-10-12 Zaidan Hojin Handotai Kenkyu Shinkokai Light-emitting semiconductor
JPS5642388A (en) * 1979-08-31 1981-04-20 Fujitsu Ltd Semiconductor light emitting device
JPS5696834A (en) * 1979-12-28 1981-08-05 Mitsubishi Monsanto Chem Co Compound semiconductor epitaxial wafer and manufacture thereof
GB2070859B (en) * 1980-02-07 1984-03-21 Stanley Electric Co Ltd Hetero-junction light-emitting diode
US4507157A (en) * 1981-05-07 1985-03-26 General Electric Company Simultaneously doped light-emitting diode formed by liquid phase epitaxy
JPS62173774A (ja) * 1986-01-27 1987-07-30 Mitsubishi Cable Ind Ltd 発光ダイオ−ド素子

Also Published As

Publication number Publication date
EP0317228A2 (de) 1989-05-24
JP2579326B2 (ja) 1997-02-05
DE3880442T2 (de) 1993-08-05
EP0317228A3 (en) 1990-05-16
EP0317228B1 (de) 1993-04-21
US4946801A (en) 1990-08-07
KR0135610B1 (ko) 1998-04-25
JPH01128517A (ja) 1989-05-22
KR890008925A (ko) 1989-07-13

Similar Documents

Publication Publication Date Title
DE3869340D1 (de) Kuenstliche zwischenwirbelscheibe.
DE3789937D1 (de) Leerlaufende Scheibe.
DE3874928D1 (de) Aufzeichnungsmittel.
DE3860239D1 (de) Scheibeneinfassung.
DE3889573D1 (de) Filterscheibe.
FI884095A (fi) Doseringsventil med hopfaellbar kammare.
DE3882344D1 (de) Nahrungsmittel.
DE3882719D1 (de) Kochgeraet.
DE3879971D1 (de) Kochgeraet.
FI904291A0 (fi) Disk med svaengbar frontskiva.
DE68910769D1 (de) Kupplungsscheibe.
DE3873900D1 (de) Plattengeraet.
DE68912062D1 (de) Plattenaufzeichnungsgerät.
DE3880442D1 (de) Epitaxiale scheibe.
DE3885475D1 (de) Eintaschverfahren.
DE3772014D1 (de) Abformloeffel.
DE59002351D1 (de) Stauscheibenfoerderer.
DE3888405D1 (de) Platteneinheit.
ATE71265T1 (de) Pilzaroma.
FI883435A0 (fi) Styrsystem foer fluider under tryck.
DE58904234D1 (de) Reibscheiben-nachstellvorrichtung.
DE68910151D1 (de) Pilzkultur.
DE3767800D1 (de) Schruppscheibe.
DE3876642D1 (de) Scheibenlaeufer.
FI871028A0 (fi) Slirskydd med kombinationsstomme foer fordonsdaeck.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: MITSUBISHI KASEI CORP., TOKIO/TOKYO, JP

8328 Change in the person/name/address of the agent

Free format text: KNAUF, R., DIPL.-ING. WERNER, D., DIPL.-ING. DR.-ING. SCHIPPAN, R., DIPL.-ING. DR.-ING. THIELMANN, A., DIPL.-ING., PAT.-ANWAELTE, 40472 DUESSELDORF