DE3875246D1 - Siliciumcarbid/metallcarbid-halbleiterlegierung. - Google Patents
Siliciumcarbid/metallcarbid-halbleiterlegierung.Info
- Publication number
- DE3875246D1 DE3875246D1 DE8989902704T DE3875246T DE3875246D1 DE 3875246 D1 DE3875246 D1 DE 3875246D1 DE 8989902704 T DE8989902704 T DE 8989902704T DE 3875246 T DE3875246 T DE 3875246T DE 3875246 D1 DE3875246 D1 DE 3875246D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor alloy
- carbide
- metal
- silicon carbide
- carbide semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 239000000956 alloy Substances 0.000 title 1
- 229910045601 alloy Inorganic materials 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
- 229910010271 silicon carbide Inorganic materials 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0312—Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
- Ceramic Products (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/138,411 US5200805A (en) | 1987-12-28 | 1987-12-28 | Silicon carbide:metal carbide alloy semiconductor and method of making the same |
PCT/US1988/004137 WO1989006438A1 (en) | 1987-12-28 | 1988-11-21 | Silicon carbide:metal carbide alloy semiconductor and method of making the same |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3875246D1 true DE3875246D1 (de) | 1992-11-12 |
DE3875246T2 DE3875246T2 (de) | 1993-04-29 |
Family
ID=22481879
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8989902704T Expired - Fee Related DE3875246T2 (de) | 1987-12-28 | 1988-11-21 | Siliciumcarbid/metallcarbid-halbleiterlegierung. |
Country Status (6)
Country | Link |
---|---|
US (1) | US5200805A (de) |
EP (1) | EP0346464B1 (de) |
JP (1) | JPH02503193A (de) |
AU (1) | AU608140B2 (de) |
DE (1) | DE3875246T2 (de) |
WO (1) | WO1989006438A1 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5043773A (en) * | 1990-06-04 | 1991-08-27 | Advanced Technology Materials, Inc. | Wafer base for silicon carbide semiconductor devices, incorporating alloy substrates |
US5190890A (en) * | 1990-06-04 | 1993-03-02 | Advanced Technology Materials, Inc. | Wafer base for silicon carbide semiconductor devices, incorporating alloy substrates, and method of making the same |
FR2681472B1 (fr) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
US5389799A (en) * | 1992-06-12 | 1995-02-14 | Kabushiki Kaisha Toshiba | Semiconductor device |
DE4325804C3 (de) * | 1993-07-31 | 2001-08-09 | Daimler Chrysler Ag | Verfahren zum Herstellen von hochohmigem Siliziumkarbid |
US5611955A (en) * | 1993-10-18 | 1997-03-18 | Northrop Grumman Corp. | High resistivity silicon carbide substrates for high power microwave devices |
FR2748851B1 (fr) | 1996-05-15 | 1998-08-07 | Commissariat Energie Atomique | Procede de realisation d'une couche mince de materiau semiconducteur |
FR2773261B1 (fr) | 1997-12-30 | 2000-01-28 | Commissariat Energie Atomique | Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions |
FR2823599B1 (fr) | 2001-04-13 | 2004-12-17 | Commissariat Energie Atomique | Substrat demomtable a tenue mecanique controlee et procede de realisation |
FR2848336B1 (fr) * | 2002-12-09 | 2005-10-28 | Commissariat Energie Atomique | Procede de realisation d'une structure contrainte destinee a etre dissociee |
FR2856844B1 (fr) * | 2003-06-24 | 2006-02-17 | Commissariat Energie Atomique | Circuit integre sur puce de hautes performances |
FR2857953B1 (fr) | 2003-07-21 | 2006-01-13 | Commissariat Energie Atomique | Structure empilee, et procede pour la fabriquer |
FR2861497B1 (fr) * | 2003-10-28 | 2006-02-10 | Soitec Silicon On Insulator | Procede de transfert catastrophique d'une couche fine apres co-implantation |
FR2889887B1 (fr) * | 2005-08-16 | 2007-11-09 | Commissariat Energie Atomique | Procede de report d'une couche mince sur un support |
FR2891281B1 (fr) | 2005-09-28 | 2007-12-28 | Commissariat Energie Atomique | Procede de fabrication d'un element en couches minces. |
FR2910179B1 (fr) * | 2006-12-19 | 2009-03-13 | Commissariat Energie Atomique | PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART |
FR2922359B1 (fr) * | 2007-10-12 | 2009-12-18 | Commissariat Energie Atomique | Procede de fabrication d'une structure micro-electronique impliquant un collage moleculaire |
FR2925221B1 (fr) * | 2007-12-17 | 2010-02-19 | Commissariat Energie Atomique | Procede de transfert d'une couche mince |
FR2947098A1 (fr) * | 2009-06-18 | 2010-12-24 | Commissariat Energie Atomique | Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL230567A (de) * | 1957-08-16 | |||
NL108185C (de) * | 1958-08-27 | |||
US3517281A (en) * | 1967-01-25 | 1970-06-23 | Tyco Laboratories Inc | Light emitting silicon carbide semiconductor junction devices |
US3577285A (en) * | 1968-03-28 | 1971-05-04 | Ibm | Method for epitaxially growing silicon carbide onto a crystalline substrate |
US3607448A (en) * | 1968-10-21 | 1971-09-21 | Hughes Aircraft Co | Chemical milling of silicon carbide |
US3662458A (en) * | 1969-06-20 | 1972-05-16 | Westinghouse Electric Corp | Electrical contact for silicon carbide members |
US3602777A (en) * | 1970-04-21 | 1971-08-31 | Westinghouse Electric Corp | Silicon carbide semiconductor device with heavily doped silicon carbide ohmic contacts |
SU438364A1 (ru) * | 1972-09-15 | 1976-07-05 | В. И. Павличенко | Диодный источник света на карбтде кремни |
JPS5120869A (en) * | 1974-08-10 | 1976-02-19 | Hitachi Shipbuilding Eng Co | Suichukosotaiheno setsukinsochi |
US4028149A (en) * | 1976-06-30 | 1977-06-07 | Ibm Corporation | Process for forming monocrystalline silicon carbide on silicon substrates |
US4161743A (en) * | 1977-03-28 | 1979-07-17 | Tokyo Shibaura Electric Co., Ltd. | Semiconductor device with silicon carbide-glass-silicon carbide passivating overcoat |
US4520039A (en) * | 1982-09-23 | 1985-05-28 | Sovonics Solar Systems | Compositionally varied materials and method for synthesizing the materials |
US4912063A (en) * | 1987-10-26 | 1990-03-27 | North Carolina State University | Growth of beta-sic thin films and semiconductor devices fabricated thereon |
-
1987
- 1987-12-28 US US07/138,411 patent/US5200805A/en not_active Expired - Lifetime
-
1988
- 1988-11-21 WO PCT/US1988/004137 patent/WO1989006438A1/en active IP Right Grant
- 1988-11-21 AU AU31909/89A patent/AU608140B2/en not_active Ceased
- 1988-11-21 JP JP89502624A patent/JPH02503193A/ja active Pending
- 1988-11-21 EP EP89902704A patent/EP0346464B1/de not_active Expired
- 1988-11-21 DE DE8989902704T patent/DE3875246T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE3875246T2 (de) | 1993-04-29 |
AU608140B2 (en) | 1991-03-21 |
WO1989006438A1 (en) | 1989-07-13 |
AU3190989A (en) | 1989-08-01 |
EP0346464A1 (de) | 1989-12-20 |
US5200805A (en) | 1993-04-06 |
JPH02503193A (ja) | 1990-10-04 |
EP0346464B1 (de) | 1992-10-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |