DE3867834D1 - Ausgangsverstaerker. - Google Patents

Ausgangsverstaerker.

Info

Publication number
DE3867834D1
DE3867834D1 DE8888103693T DE3867834T DE3867834D1 DE 3867834 D1 DE3867834 D1 DE 3867834D1 DE 8888103693 T DE8888103693 T DE 8888103693T DE 3867834 T DE3867834 T DE 3867834T DE 3867834 D1 DE3867834 D1 DE 3867834D1
Authority
DE
Germany
Prior art keywords
amplifier stage
stage
transistor amplifier
output amplifier
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888103693T
Other languages
English (en)
Inventor
Werner Berkel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hewlett Packard GmbH Germany
Original Assignee
Hewlett Packard GmbH Germany
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard GmbH Germany filed Critical Hewlett Packard GmbH Germany
Application granted granted Critical
Publication of DE3867834D1 publication Critical patent/DE3867834D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/226Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with junction-FET's
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45278Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using BiFET transistors as the active amplifying circuit
    • H03F3/45282Long tailed pairs
    • H03F3/45286Non-folded cascode stages
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175Coupling arrangements; Interface arrangements
    • H03K19/018Coupling arrangements; Interface arrangements using bipolar transistors only
    • H03K19/01825Coupling arrangements, impedance matching circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0952Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using Schottky type FET MESFET
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01Shaping pulses
    • H03K5/02Shaping pulses by amplifying
    • H03K5/023Shaping pulses by amplifying using field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
DE8888103693T 1988-03-09 1988-03-09 Ausgangsverstaerker. Expired - Fee Related DE3867834D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP88103693A EP0331778B1 (de) 1988-03-09 1988-03-09 Ausgangsverstärker

Publications (1)

Publication Number Publication Date
DE3867834D1 true DE3867834D1 (de) 1992-02-27

Family

ID=8198790

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888103693T Expired - Fee Related DE3867834D1 (de) 1988-03-09 1988-03-09 Ausgangsverstaerker.

Country Status (4)

Country Link
US (1) US4929907A (de)
EP (1) EP0331778B1 (de)
JP (1) JP2933317B2 (de)
DE (1) DE3867834D1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5057719A (en) * 1990-06-27 1991-10-15 Sverdrup Technology, Inc. Passively forced current sharing among transistors
AU747260B2 (en) 1997-07-25 2002-05-09 Nichia Chemical Industries, Ltd. Nitride semiconductor device
DE19806394C1 (de) * 1998-02-17 1999-08-26 Bosch Gmbh Robert Schaltungsanordnung zur Verstärkung eines Differenz-Spannungssignals
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
EP1168539B1 (de) 1999-03-04 2009-12-16 Nichia Corporation Nitridhalbleiterlaserelement
US6593869B1 (en) * 2002-03-28 2003-07-15 Hrl Laboratories, Llc High efficiency, high output drive current switch with application to digital to analog conversion
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5297046U (de) * 1976-01-19 1977-07-20
GB2104747B (en) * 1981-08-25 1984-12-12 Standard Telephones Cables Ltd Integrated circuit power supplies
JPS58202607A (ja) * 1982-05-21 1983-11-25 Hitachi Ltd 増幅器
US4464636A (en) * 1983-01-05 1984-08-07 Zenith Electronics Corporation Wideband IF amplifier with complementary GaAs FET-bipolar transistor combination
US4520324A (en) * 1983-03-11 1985-05-28 National Semiconductor Corporation MOS Gain controlled amplifier

Also Published As

Publication number Publication date
JP2933317B2 (ja) 1999-08-09
JPH01272211A (ja) 1989-10-31
EP0331778A1 (de) 1989-09-13
US4929907A (en) 1990-05-29
EP0331778B1 (de) 1992-01-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee