DE3866568D1 - In einem hohlleiter integrierter mikrowellenoszillator. - Google Patents

In einem hohlleiter integrierter mikrowellenoszillator.

Info

Publication number
DE3866568D1
DE3866568D1 DE8888400581T DE3866568T DE3866568D1 DE 3866568 D1 DE3866568 D1 DE 3866568D1 DE 8888400581 T DE8888400581 T DE 8888400581T DE 3866568 T DE3866568 T DE 3866568T DE 3866568 D1 DE3866568 D1 DE 3866568D1
Authority
DE
Germany
Prior art keywords
semiconductor
microwave oscillator
oscillator integrated
integrated
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888400581T
Other languages
English (en)
Inventor
Jean Stevance Jean Stevance
Edmond Klein
Georges Lleti
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thomson Hybrides et Microondes
Original Assignee
Thomson Hybrides et Microondes
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson Hybrides et Microondes filed Critical Thomson Hybrides et Microondes
Application granted granted Critical
Publication of DE3866568D1 publication Critical patent/DE3866568D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H03B9/14—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance
    • H03B9/141—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance and comprising a voltage sensitive element, e.g. varactor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H03B2009/126—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices using impact ionization avalanche transit time [IMPATT] diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/0014—Structural aspects of oscillators
    • H03B2200/0016—Structural aspects of oscillators including a ring, disk or loop shaped resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/0014—Structural aspects of oscillators
    • H03B2200/0028—Structural aspects of oscillators based on a monolithic microwave integrated circuit [MMIC]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/003—Circuit elements of oscillators
    • H03B2200/004—Circuit elements of oscillators including a variable capacitance, e.g. a varicap, a varactor or a variable capacitance of a diode or transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H03B9/14—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance
    • H03B9/145—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance the frequency being determined by a cavity resonator, e.g. a hollow waveguide cavity or a coaxial cavity
    • H03B9/146—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance the frequency being determined by a cavity resonator, e.g. a hollow waveguide cavity or a coaxial cavity formed by a disc, e.g. a waveguide cap resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C3/00—Angle modulation
    • H03C3/10—Angle modulation by means of variable impedance
    • H03C3/12—Angle modulation by means of variable impedance by means of a variable reactive element
    • H03C3/22—Angle modulation by means of variable impedance by means of a variable reactive element the element being a semiconductor diode, e.g. varicap diode
DE8888400581T 1987-03-19 1988-03-11 In einem hohlleiter integrierter mikrowellenoszillator. Expired - Fee Related DE3866568D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8703837A FR2612708B1 (fr) 1987-03-19 1987-03-19 Oscillateur hyperfrequence integre dans un guide d'ondes

Publications (1)

Publication Number Publication Date
DE3866568D1 true DE3866568D1 (de) 1992-01-16

Family

ID=9349212

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888400581T Expired - Fee Related DE3866568D1 (de) 1987-03-19 1988-03-11 In einem hohlleiter integrierter mikrowellenoszillator.

Country Status (4)

Country Link
US (1) US4847571A (de)
EP (1) EP0284485B1 (de)
DE (1) DE3866568D1 (de)
FR (1) FR2612708B1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2227386A (en) * 1989-01-20 1990-07-25 Philips Electronic Associated Compact tunable waveguide oscillators
FR2677192B1 (fr) * 1991-05-29 1997-01-24 Sadis Bruker Spectrospin Generateur hyperfrequence a element source loge dans une entaille formee dans une paroi du corps de la cavite resonante.
US5783973A (en) * 1997-02-24 1998-07-21 The Charles Stark Draper Laboratory, Inc. Temperature insensitive silicon oscillator and precision voltage reference formed therefrom
US6777684B1 (en) 1999-08-23 2004-08-17 Rose Research L.L.C. Systems and methods for millimeter and sub-millimeter wave imaging
KR100506058B1 (ko) * 2002-11-28 2005-08-05 매그나칩 반도체 유한회사 주파수 구분 전압 제어 발진기를 사용하는 위상 제어 루프회로

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2423088A1 (fr) * 1978-04-14 1979-11-09 Thomson Csf Source d'ondes millimetriques comportant un module oscillateur et un module d'accord a capacite variable, et emetteur comportant une telle source
FR2508233A1 (fr) * 1981-06-19 1982-12-24 Thomson Csf Procede de realisation d'un composant unitaire comportant une diode oscillatrice et une diode a capacite variable et emetteur accordable en frequence comprenant un tel composant unitaire
US4588967A (en) * 1984-12-10 1986-05-13 The United States Of America As Represented By The Secretary Of The Army Integrated varactor tuned coaxial gun oscillator for 60 GHz operation
US4728907A (en) * 1986-12-04 1988-03-01 Eaton Corporation Frequency/temperature compensated millimeter wave oscillator

Also Published As

Publication number Publication date
EP0284485A1 (de) 1988-09-28
FR2612708B1 (fr) 1989-05-26
US4847571A (en) 1989-07-11
EP0284485B1 (de) 1991-12-04
FR2612708A1 (fr) 1988-09-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee