DE3853429D1 - Halbleiterschalter, der feldkompression verwendet und der auf dem lawinenvolumeneffekt beruht. - Google Patents
Halbleiterschalter, der feldkompression verwendet und der auf dem lawinenvolumeneffekt beruht.Info
- Publication number
- DE3853429D1 DE3853429D1 DE3853429T DE3853429T DE3853429D1 DE 3853429 D1 DE3853429 D1 DE 3853429D1 DE 3853429 T DE3853429 T DE 3853429T DE 3853429 T DE3853429 T DE 3853429T DE 3853429 D1 DE3853429 D1 DE 3853429D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor block
- photoconduction
- avalanche
- radiation
- avalanche breakdown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 230000006835 compression Effects 0.000 title abstract 2
- 238000007906 compression Methods 0.000 title abstract 2
- 238000010521 absorption reaction Methods 0.000 abstract 3
- 230000015556 catabolic process Effects 0.000 abstract 3
- 230000005855 radiation Effects 0.000 abstract 2
- 230000009977 dual effect Effects 0.000 abstract 1
- 230000005670 electromagnetic radiation Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000001960 triggered effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02027—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/53—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Lasers (AREA)
- Electronic Switches (AREA)
- Push-Button Switches (AREA)
- Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
- Light Receiving Elements (AREA)
- Pyrane Compounds (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/092,487 US4782222A (en) | 1987-09-03 | 1987-09-03 | Bulk avalanche semiconductor switch using partial light penetration and inducing field compression |
PCT/US1988/003053 WO1989002159A1 (en) | 1987-09-03 | 1988-09-06 | Bulk avalanche semiconductor switch using field compression |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3853429D1 true DE3853429D1 (de) | 1995-04-27 |
DE3853429T2 DE3853429T2 (de) | 1995-07-27 |
Family
ID=22233469
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3853429T Expired - Fee Related DE3853429T2 (de) | 1987-09-03 | 1988-09-06 | Halbleiterschalter, der feldkompression verwendet und der auf dem lawinenvolumeneffekt beruht. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4782222A (de) |
EP (1) | EP0379521B1 (de) |
JP (1) | JPH0758814B2 (de) |
AT (1) | ATE120308T1 (de) |
AU (1) | AU2425488A (de) |
DE (1) | DE3853429T2 (de) |
WO (1) | WO1989002159A1 (de) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5185586A (en) * | 1986-04-24 | 1993-02-09 | Energy Compression Research Corp. | Method and apparatus for digital synthesis of microwaves |
JP2547017B2 (ja) * | 1987-05-25 | 1996-10-23 | アルプス電気株式会社 | 光センサ |
US4891815A (en) * | 1987-10-13 | 1990-01-02 | Power Spectra, Inc. | Bulk avalanche semiconductor laser |
US4914286A (en) * | 1989-04-20 | 1990-04-03 | At&T Bell Laboratories | Method and apparatus for increasing the processing capacity of optical digital processing systems having optically bistable devices |
US5146075A (en) * | 1991-04-08 | 1992-09-08 | The United States Of America As Represented By The Secretary Of The Army | Ligh activated high power integrated pulser |
US5554882A (en) * | 1993-11-05 | 1996-09-10 | The Boeing Company | Integrated trigger injector for avalanche semiconductor switch devices |
US5898211A (en) * | 1996-04-30 | 1999-04-27 | Cutting Edge Optronics, Inc. | Laser diode package with heat sink |
SE9803934D0 (sv) * | 1997-12-15 | 1998-11-18 | Asea Brown Boveri | An electric switching device and a method for performing electric disconnection of a load |
SE9704685L (sv) | 1997-12-15 | 1999-06-16 | Asea Brown Boveri | Kopplingsanordning och -förfarande |
SE9704686L (sv) * | 1997-12-15 | 1999-06-16 | Asea Brown Boveri | Anordning och förfarande för koppling |
SE9803490D0 (sv) * | 1998-10-14 | 1998-10-14 | Asea Brown Boveri | An electric switching device and a method for performing electric disconnection of a load |
US6140715A (en) * | 1998-11-06 | 2000-10-31 | Asea Brown Boveri Ab | Electric switching device and a method for performing electric disconnection of a load |
SE9804135L (sv) | 1998-11-30 | 2000-05-31 | Abb Ab | Fotokonduktiv omkopplare |
SE9903149L (sv) * | 1999-09-06 | 2001-03-07 | Abb Ab | Kopplaranordning |
SE9904305D0 (sv) * | 1999-09-06 | 1999-11-26 | Abb Ab | A use of a semiconductor device, a method for controlling the state of a semiconductor switch and an electrical arrangement |
US6265934B1 (en) | 1999-12-16 | 2001-07-24 | Lockheed Martin Corporation | Q-switched parametric cavity amplifier |
US6297716B1 (en) | 1999-12-16 | 2001-10-02 | Lockheed Martin Corporation | Q-switched cavity multiplier |
US6281746B1 (en) | 1999-12-16 | 2001-08-28 | Lockheed Martin Corporation | Parametric cavity microwave amplifier |
US6587097B1 (en) | 2000-11-28 | 2003-07-01 | 3M Innovative Properties Co. | Display system |
US6567331B2 (en) * | 2001-06-18 | 2003-05-20 | Velor Incorporated | Avalanche breakdown memory devices and method of using the same |
AT411503B8 (de) * | 2002-02-28 | 2004-05-25 | Femtolasers Produktions Gmbh | Einrichtung zur erzeugung von terahertz-strahlung sowie halbleiterbauelement |
US7305016B2 (en) | 2005-03-10 | 2007-12-04 | Northrop Grumman Corporation | Laser diode package with an internal fluid cooling channel |
US7656915B2 (en) * | 2006-07-26 | 2010-02-02 | Northrop Grumman Space & Missions Systems Corp. | Microchannel cooler for high efficiency laser diode heat extraction |
US20080056314A1 (en) * | 2006-08-31 | 2008-03-06 | Northrop Grumman Corporation | High-power laser-diode package system |
US7929580B2 (en) * | 2006-09-22 | 2011-04-19 | Alcatel-Lucent Usa Inc. | Inexpensive terahertz pulse wave generator |
US7724791B2 (en) * | 2008-01-18 | 2010-05-25 | Northrop Grumman Systems Corporation | Method of manufacturing laser diode packages and arrays |
FR2930089B1 (fr) | 2008-04-11 | 2010-06-04 | Univ Limoges | Generateur d'impulsions electriques de forte puissance a spectre evolutif, installation et equipement mettant en oeuvre un tel generateur. |
JP5297276B2 (ja) * | 2009-06-18 | 2013-09-25 | 浜松ホトニクス株式会社 | フォトダイオードアレイ |
US8345720B2 (en) | 2009-07-28 | 2013-01-01 | Northrop Grumman Systems Corp. | Laser diode ceramic cooler having circuitry for control and feedback of laser diode performance |
US9590388B2 (en) | 2011-01-11 | 2017-03-07 | Northrop Grumman Systems Corp. | Microchannel cooler for a single laser diode emitter based system |
US20130334537A1 (en) * | 2012-06-14 | 2013-12-19 | The Curators Of The University Of Missouri | Optically Controlled Power Devices |
US9716202B2 (en) | 2012-08-13 | 2017-07-25 | The Curators Of The University Of Missouri | Optically activated linear switch for radar limiters or high power switching applications |
US9728660B2 (en) | 2012-08-14 | 2017-08-08 | The Curators Of The University Of Missouri | Optically-triggered linear or avalanche solid state switch for high power applications |
US8937976B2 (en) | 2012-08-15 | 2015-01-20 | Northrop Grumman Systems Corp. | Tunable system for generating an optical pulse based on a double-pass semiconductor optical amplifier |
JP6156495B2 (ja) * | 2013-07-01 | 2017-07-05 | 日本電気株式会社 | コヒーレントテラヘルツ光用光学装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5139519B2 (de) * | 1971-08-23 | 1976-10-28 | ||
JPS5220116B2 (de) * | 1972-09-07 | 1977-06-01 | ||
JPS50148088A (de) * | 1974-05-20 | 1975-11-27 | ||
US3917943A (en) * | 1974-11-21 | 1975-11-04 | Bell Telephone Labor Inc | Picosecond semiconductor electronic switch controlled by optical means |
JPS5347784A (en) * | 1976-10-13 | 1978-04-28 | Nec Corp | Production of semiconductor device |
FR2385227A1 (fr) * | 1977-03-25 | 1978-10-20 | Thomson Csf | Dispositif a effet gunn modulable par impulsions codees, et convertisseur numerique parallele-serie utilisant un tel dispositif |
GB2034518B (en) * | 1978-10-18 | 1983-06-29 | Westinghouse Electric Corp | Light activated p-i-n switch |
US4218618A (en) * | 1979-02-21 | 1980-08-19 | The University Of Rochester | Apparatus for switching high voltage pulses with picosecond accuracy |
US4240088A (en) * | 1979-08-08 | 1980-12-16 | Semicon, Inc. | Semiconductor high-voltage switch |
US4301362A (en) * | 1979-11-21 | 1981-11-17 | University Of Rochester | Light activated solid state switch |
US4347437A (en) * | 1980-06-17 | 1982-08-31 | The University Of Rochester | Light activated switching by the avalanche effect in semiconductors |
US4438331A (en) * | 1981-12-02 | 1984-03-20 | Power Spectra, Inc. | Bulk semiconductor switch |
DD233705A1 (de) * | 1985-01-03 | 1986-03-05 | Adw Ddr Inst Optik | Optoelektronischer festkoerperschalter |
-
1987
- 1987-09-03 US US07/092,487 patent/US4782222A/en not_active Expired - Fee Related
-
1988
- 1988-09-06 EP EP88908593A patent/EP0379521B1/de not_active Expired - Lifetime
- 1988-09-06 AT AT88908593T patent/ATE120308T1/de not_active IP Right Cessation
- 1988-09-06 WO PCT/US1988/003053 patent/WO1989002159A1/en active IP Right Grant
- 1988-09-06 DE DE3853429T patent/DE3853429T2/de not_active Expired - Fee Related
- 1988-09-06 JP JP63507757A patent/JPH0758814B2/ja not_active Expired - Lifetime
- 1988-09-06 AU AU24254/88A patent/AU2425488A/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO1989002159A1 (en) | 1989-03-09 |
EP0379521A4 (en) | 1991-04-17 |
DE3853429T2 (de) | 1995-07-27 |
ATE120308T1 (de) | 1995-04-15 |
AU2425488A (en) | 1989-03-31 |
US4782222A (en) | 1988-11-01 |
JPH0758814B2 (ja) | 1995-06-21 |
JPH02502954A (ja) | 1990-09-13 |
EP0379521B1 (de) | 1995-03-22 |
EP0379521A1 (de) | 1990-08-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3853429D1 (de) | Halbleiterschalter, der feldkompression verwendet und der auf dem lawinenvolumeneffekt beruht. | |
Yablonovitch | Optical Dielectric Strength of Alkali‐Halide Crystals Obtained by Laser‐Induced Breakdown | |
ATE179840T1 (de) | Blitzentladung durch ultrakurze laserimpulse | |
Woodworth et al. | Laser triggering of a 500‐kV gas‐filled switch: A parametric study | |
DE3476627D1 (en) | Device for the production of short, high intensity electromagnetic radiation pulses in the wavelength region under 100 nm | |
SE8204082L (sv) | Kirurgusk diatermigenerator | |
Loubriel et al. | Triggering GaAs lock-on switches with laser diode arrays | |
ES8104686A1 (es) | Perfeccionamientos en interruptores disparados opticamente | |
Ho et al. | A diamond opto-electronic switch | |
DE3863403D1 (de) | Schalter mit elektromechanisch gezuendeter funkenstrecke. | |
Hu et al. | Performance investigation of bulk photoconductive semiconductor switch based on reversely biased p+-in+ structure | |
Schoenbach et al. | Temporal development of electric field structures in photoconductive GaAs switches | |
Zutavern et al. | Electrical and optical properties of high-gain GaAs switches | |
Loubriel et al. | High-gain GaAs photoconductive semiconductor switches for impulse sources | |
Hontzopoulos et al. | Enhancement of ultraviolet laser plasma emission produced in a strong static electric field | |
SE7714289L (sv) | Anordning for att skydda elektriska system, serskilt telekommunikationssystem, mot overspenningspulser | |
Chauchard et al. | A new method to generate square pulses: optoelectronic switching in a current charged transmission line | |
Tuema et al. | Factors affecting the UV emission from pulsed surface discharges | |
DE59406463D1 (de) | Hochspannungs-leistungsschalter mit einer feldelektrode | |
Janulewicz | Enhanced attenuation of a plasma isolator with a surface spark as a on pre-ionization source | |
Aleksandrov et al. | Multichannel semiconductor nanosecond switch for excitation of copper vapor by a transverse discharge | |
SU1641161A1 (ru) | Способ управления срабатыванием газового разрядника | |
Lowry et al. | Optically activated switch | |
JPS6481185A (en) | Vacuum trigger gap | |
Adams et al. | Simultaneous ultraviolet laser triggering of two multimegavolt gas switches |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |