DE3841352A1 - Verfahren zur herstellung eines maskentraegers aus sic fuer strahlungslithographie-masken - Google Patents

Verfahren zur herstellung eines maskentraegers aus sic fuer strahlungslithographie-masken

Info

Publication number
DE3841352A1
DE3841352A1 DE3841352A DE3841352A DE3841352A1 DE 3841352 A1 DE3841352 A1 DE 3841352A1 DE 3841352 A DE3841352 A DE 3841352A DE 3841352 A DE3841352 A DE 3841352A DE 3841352 A1 DE3841352 A1 DE 3841352A1
Authority
DE
Germany
Prior art keywords
sic layer
sic
single crystal
silicon single
range
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE3841352A
Other languages
German (de)
English (en)
Inventor
Margret Harms
Holger Dipl Ing Luethje
Bernd Dipl Ing Matthiessen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Intellectual Property and Standards GmbH
Original Assignee
Philips Patentverwaltung GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Patentverwaltung GmbH filed Critical Philips Patentverwaltung GmbH
Priority to DE3841352A priority Critical patent/DE3841352A1/de
Priority to DE58909366T priority patent/DE58909366D1/de
Priority to US07/446,519 priority patent/US4994141A/en
Priority to EP89203065A priority patent/EP0372645B1/de
Priority to JP1316603A priority patent/JPH02213118A/ja
Priority to KR1019890018148A priority patent/KR900010468A/ko
Publication of DE3841352A1 publication Critical patent/DE3841352A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
DE3841352A 1988-12-08 1988-12-08 Verfahren zur herstellung eines maskentraegers aus sic fuer strahlungslithographie-masken Withdrawn DE3841352A1 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE3841352A DE3841352A1 (de) 1988-12-08 1988-12-08 Verfahren zur herstellung eines maskentraegers aus sic fuer strahlungslithographie-masken
DE58909366T DE58909366D1 (de) 1988-12-08 1989-12-04 Verfahren zur Herstellung eines Maskenträgers aus SiC für Strahlungslithographie-Masken.
US07/446,519 US4994141A (en) 1988-12-08 1989-12-04 Method of manufacturing a mask support of SiC for radiation lithography masks
EP89203065A EP0372645B1 (de) 1988-12-08 1989-12-04 Verfahren zur Herstellung eines Maskenträgers aus SiC für Strahlungslithographie-Masken
JP1316603A JPH02213118A (ja) 1988-12-08 1989-12-07 放射線リソグラフィーマスク用のｓｉｃマスク支持部材の製造方法
KR1019890018148A KR900010468A (ko) 1988-12-08 1989-12-08 방사 인쇄 매스크용 SiC 매스크지지체 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3841352A DE3841352A1 (de) 1988-12-08 1988-12-08 Verfahren zur herstellung eines maskentraegers aus sic fuer strahlungslithographie-masken

Publications (1)

Publication Number Publication Date
DE3841352A1 true DE3841352A1 (de) 1990-06-21

Family

ID=6368725

Family Applications (2)

Application Number Title Priority Date Filing Date
DE3841352A Withdrawn DE3841352A1 (de) 1988-12-08 1988-12-08 Verfahren zur herstellung eines maskentraegers aus sic fuer strahlungslithographie-masken
DE58909366T Expired - Fee Related DE58909366D1 (de) 1988-12-08 1989-12-04 Verfahren zur Herstellung eines Maskenträgers aus SiC für Strahlungslithographie-Masken.

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE58909366T Expired - Fee Related DE58909366D1 (de) 1988-12-08 1989-12-04 Verfahren zur Herstellung eines Maskenträgers aus SiC für Strahlungslithographie-Masken.

Country Status (5)

Country Link
US (1) US4994141A (enExample)
EP (1) EP0372645B1 (enExample)
JP (1) JPH02213118A (enExample)
KR (1) KR900010468A (enExample)
DE (2) DE3841352A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8163632B2 (en) 2006-12-04 2012-04-24 Carl Zeiss Smt Gmbh Irradiation with high energy ions for surface structuring and treatment of surface proximal sections of optical elements

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0715880B2 (ja) * 1989-12-26 1995-02-22 信越化学工業株式会社 Ｘ線リソグラフィー用ＳｉＣ膜、その製造方法およびＸ線リソグラフィー用マスク
JPH0712017B2 (ja) * 1989-12-26 1995-02-08 信越化学工業株式会社 Ｘ線リソグラフィー用ＳｉＣ／Ｓｉ▲下３▼Ｎ▲下４▼膜の成膜方法
US5156784A (en) * 1991-10-09 1992-10-20 International Business Machines Corporation Method for fabricating a silicon carbide film to provide improved radiation hardness
US5593494A (en) * 1995-03-14 1997-01-14 Memc Electronic Materials, Inc. Precision controlled precipitation of oxygen in silicon
US5888412A (en) * 1996-03-04 1999-03-30 Motorola, Inc. Method for making a sculptured diaphragm
US5824204A (en) * 1996-06-27 1998-10-20 Ic Sensors, Inc. Micromachined capillary electrophoresis device
DE19803186C1 (de) * 1998-01-28 1999-06-17 Bosch Gmbh Robert Verfahren zur Herstellung strukturierter Wafer
JP2000206675A (ja) * 1999-01-12 2000-07-28 Nikon Corp 転写マスク用ブランクスおよび転写マスク
US6593209B2 (en) * 2001-11-15 2003-07-15 Kulite Semiconductor Products, Inc. Closing of micropipes in silicon carbide (SiC) using oxidized polysilicon techniques
KR100534485B1 (ko) * 2002-12-02 2005-12-26 주식회사 유니테스트 실란계 화합물을 이용한 표면 또는 몸체 미세가공 기술의점착 방지 방법
US6982196B2 (en) * 2003-11-04 2006-01-03 International Business Machines Corporation Oxidation method for altering a film structure and CMOS transistor structure formed therewith
US20070298586A1 (en) * 2006-06-21 2007-12-27 Nissan Motor Co., Ltd. Method of manufacturing semiconductor device
JP6248532B2 (ja) * 2013-10-17 2017-12-20 セイコーエプソン株式会社 ３Ｃ−ＳｉＣエピタキシャル層の製造方法、３Ｃ−ＳｉＣエピタキシャル基板および半導体装置
JP6753705B2 (ja) * 2016-06-10 2020-09-09 エア・ウォーター株式会社 基板の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2100713B (en) * 1981-06-23 1985-04-24 Atomic Energy Authority Uk Modifying the mechanical properties of silicon carbide
US4668336A (en) * 1985-07-23 1987-05-26 Micronix Corporation Process for making a mask used in x-ray photolithography
US4680243A (en) * 1985-08-02 1987-07-14 Micronix Corporation Method for producing a mask for use in X-ray photolithography and resulting structure
EP0244496B1 (de) * 1986-05-06 1991-01-16 Ibm Deutschland Gmbh Maske für die Ionen-, Elektronen- oder Röntgenstrahllithographie und Verfahren zur ihrer Herstellung
DE3733311A1 (de) * 1987-10-02 1989-04-13 Philips Patentverwaltung Verfahren zur herstellung eines maskentraegers aus sic fuer roentgenstrahllithographie-masken

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8163632B2 (en) 2006-12-04 2012-04-24 Carl Zeiss Smt Gmbh Irradiation with high energy ions for surface structuring and treatment of surface proximal sections of optical elements
US8466047B2 (en) 2006-12-04 2013-06-18 Carl Zeiss Smt Gmbh Irradiation with high energy ions for surface structuring and treatment of surface proximal sections of optical elements

Also Published As

Publication number Publication date
JPH0557729B2 (enExample) 1993-08-24
EP0372645B1 (de) 1995-07-26
KR900010468A (ko) 1990-07-07
JPH02213118A (ja) 1990-08-24
US4994141A (en) 1991-02-19
EP0372645A3 (de) 1991-03-20
EP0372645A2 (de) 1990-06-13
DE58909366D1 (de) 1995-08-31

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Legal Events

Date Code Title Description
8139 Disposal/non-payment of the annual fee