DE3837300A1 - Method for producing microelectronic circuits and hybrids - Google Patents
Method for producing microelectronic circuits and hybridsInfo
- Publication number
- DE3837300A1 DE3837300A1 DE3837300A DE3837300A DE3837300A1 DE 3837300 A1 DE3837300 A1 DE 3837300A1 DE 3837300 A DE3837300 A DE 3837300A DE 3837300 A DE3837300 A DE 3837300A DE 3837300 A1 DE3837300 A1 DE 3837300A1
- Authority
- DE
- Germany
- Prior art keywords
- glass solder
- glass
- silver
- solder paste
- pressed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4827—Materials
- H01L23/4828—Conductive organic material or pastes, e.g. conductive adhesives, inks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/8122—Applying energy for connecting with energy being in the form of electromagnetic radiation
- H01L2224/81224—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8389—Bonding techniques using an inorganic non metallic glass type adhesive, e.g. solder glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0106—Neodymium [Nd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01077—Iridium [Ir]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
- H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Die Bonding (AREA)
Abstract
Description
Die Erfindung bezieht sich auf ein Verfahren zur Herstellung von mikro elektronischen Schaltungen und Hybriden gemäß dem Gattungsbegriff des Anspruchs 1.The invention relates to a method for producing micro electronic circuits and hybrids according to the generic term of Claim 1.
Hochkomplexe mikroelektronische Schaltungen hoher Zuverlässigkeit werden durch hermetische Verkapselung gegen äußere Feuchte, aggressive Gase und schädliche Umwelteinflüsse vor Korrosion geschützt. Hierbei müssen aber auch in der Verkapselung selbst für die Schaltung aggresive Stoffe ver mieden bzw. ausgeschlossen werden. Dies ist aber bei dem zunehmenden Einsatz von Kunststoffen zum Verkleben, Verkapseln und Abdecken bei sol chen hermetisch verschlossenen Mikroelektronik-Schaltungen nicht mit Sicherheit gewährleistet, vor allem dann, wenn sie thermisch beansprucht werden, wie beispielsweise beim Verlöten von CERDIP-Gehäusen oder beim Einsatz von Leistungschips.Highly complex microelectronic circuits with high reliability through hermetic encapsulation against external moisture, aggressive gases and harmful environmental influences protected against corrosion. Here, however also in the encapsulation itself for switching aggressive substances avoided or excluded. But this is with the increasing Use of plastics for gluing, encapsulating and covering sol hermetically sealed microelectronic circuits Security guaranteed, especially when it is thermally stressed such as when soldering CERDIP housings or when Use of performance chips.
Bei der Verwendung von sogenannten Lotpasten ist eine erhebliche Ein schränkung durch die organischen Anteile solcher Pasten, insbesondere der aggresiven Flußmittel gegeben. Dies gilt auch für das Verlöten mit Preforms, Lötfolien usw., da sie aufwendige bzw. sehr anspruchsvolle Metallisierung - wie beispielsweise Vorverzinnung der Bauteile - erfor dern. Auch die laufende Weiterentwicklung von hitzebeständigen, hochge füllten Silberleitklebern brachte bisher keine Lösung.When using so-called solder pastes, there is a considerable restriction due to the organic proportions of such pastes, in particular the aggressive flux. This is true and so also for soldering with preforms, solder foils as they elaborate and highly sophisticated metallization - such as pre-tinning of components - erfor countries. The ongoing further development of heat-resistant, highly filled silver conductive adhesives has so far brought no solution.
Aus der Hochvakuumtechnik der Elektronenstrahlröhren sind zum Verlöten von Glas- und Metallteilen sogenannte Glaslotpasten bekannt geworden, beispielsweise in der US-PS 35 20 831 oder DE-PS 27 46 320. In dem Arti kel "Development of adhesive DIE Attach Technology in Cerdip Packages", von F. K. Moghadam in "Solid State Technology", Jan. 84, Seiten 149- 157, wird eine Paste aus Glaslot mit 70-80% Silberpulver (bezogen auf Feststoff) und einer Bindemittel-Lösung auf Terpineol-Basis be schrieben. Durchgeführte Versuche ergaben jedoch, daß solche Sil ber-Glaslot-Pasten gemäß des Standes der Technik erhebliche Haftfestig keitseinbußen von über 50% schon nach wenigen Thermoschocks aufweisen. Hinzu kommt noch, daß die Zugscherfestigkeit nur 30-40% der sonst an Silberglaslotverbindungen ermittelten Werte erreichte. Untersuchungen ergaben, daß sowohl Abkühlungsrisse als auch Lunker auftreten, die für diese Festigkeitsminderung verantwortlich sind. Die Lösungsmittel-Ver dampfung dieser Silberglaslot-Pasten und die Bindemittel-Zersetzung er geben hohe Porosität und ein Aufschäumen des Glases.From the high vacuum technology of electron beam tubes are to be soldered so-called glass solder pastes have become known for glass and metal parts, for example in US-PS 35 20 831 or DE-PS 27 46 320. In the Arti "Development of adhesive DIE Attach Technology in Cerdip Packages", by F. K. Moghadam in Solid State Technology, Jan. 84, pages 149- 157, a paste of glass solder with 70-80% silver powder (obtained on solid) and a binder solution based on terpineol wrote. Experiments carried out, however, have shown that such Sil Prior to glass solder pastes considerable adhesive strength show a loss of over 50% after just a few thermal shocks. In addition, the tensile shear strength is only 30-40% of that otherwise Silver glass solder connections reached values. Investigations showed that both cooling cracks and voids occur, which for are responsible for this reduction in strength. The solvent ver vaporization of these silver glass solder pastes and the binder decomposition give high porosity and foaming of the glass.
Der vorliegenden Erfindung liegt die Aufgabe zugrunde, ein Verfahren der eingangs genannten Art zu schaffen, das die Verarbeitungsvorteile der Klebetechnik und des Epoxy-DIE-Bondens bietet und thermisch wie elek trisch leitende, gut haftende, gegenüber mechanischen und thermischen Schocks stabile Fügeverbindungen zwischen Chip und Substrat gewähr leistet.The present invention has for its object a method of to create the kind mentioned that the processing advantages of Adhesive technology and epoxy DIE bonding offers and thermal as elek trically conductive, well adhering to mechanical and thermal Shocks ensure stable joint connections between chip and substrate accomplishes.
Diese Aufgabe wird durch die im Anspruch 1 aufgezeigte Lehre gelöst. In den Unteransprüchen sind Weiterbildungen und Ausgestaltungen angegeben und in der nachfolgenden Beschreibung sind Ausführungsbeispiele ge bracht.This object is achieved by the teaching set out in claim 1. In Further developments and refinements are specified in the subclaims and in the following description, embodiments are ge brings.
Das hier vorgeschlagene Verfahren sieht vor, daß die Glaslotpaste zu nächst wie ein Epoxy-Kleber nach dem Siebdruck- , Stempel- oder DIE-Bond-Verfahren aufgetragen, dann bis auf 300°C aufgeheizt, entgast und heiß angepreßt wird und erst dann die Chips bzw. Bauteile aufge drückt werden. Die Paste wird im Viskositätsverhalten mit Hilfe der Bindemittellösung - hier 1%-ige Nitrocellulose/Butylacetat-Lösung - der bisher üblichen Epoxy-Kleberpaste angepaßt, so daß nebeneinander mit den gleichen Maschinen und Vorrichtungen eine Verarbeitung möglich ist. Bei großflächigen Glaslot-Beschichtungen, z.B. zum Anlöten des Bauteils auf das Substrat erweist sich die Heißstempel- oder Bügeltechnik als sehr vorteilhaft. The method proposed here provides that the glass solder paste is first applied like an epoxy adhesive using the screen printing, stamping or DIE bonding method, then heated to 300 ° C., degassed and hot pressed, and only then is the chips or components are pressed up. The viscosity of the paste is adjusted with the aid of the binder solution - here 1% nitrocellulose / butyl acetate solution - to the epoxy adhesive paste which has been customary so far, so that processing can be carried out side by side with the same machines and devices. With large-area glass solder coatings, for example for soldering the component onto the substrate, the hot stamping or ironing technique has proven to be very advantageous.
Nun konnte überraschend festgestellt werden, daß die elektrische und thermische Leitfähigkeit bei Silberglaslot nahezu sprunghaft von 1 Ω auf den erforderlichen Wert von 0,05 Ω ansteigt, wenn der Silberanteil des Lots zwischen 25 und 45% beträgt. Bei einer weiteren Erhöhung auf den üblichen Anteil von 80% Silber jedoch ist der Anstieg nur noch ge ring. Durch den hier im Verfahren vorgeschlagenen Silberanteil von 25 bis 40%, der die gleiche Leitfähigkeit wie das Epoxy-Silberglaslot des Standes der Technik erbringt, wird nicht nur eine beachtliche Silberer sparnis erzielt, sondern auch eine Erhöhung des Binderanteils erreicht, d.h. eine niedrigere Schmelzviskosität, eine bessere Benetzung und Ver schmelzung und damit auch eine höhere Haftung.Now it was surprisingly found that the electrical and Thermal conductivity with silver glass solder almost abruptly from 1 Ω increases to the required value of 0.05 Ω when the silver content of the solder is between 25 and 45%. With a further increase on the usual share of 80% silver, however, is only an increase ring. Due to the silver content of 25 suggested here in the process up to 40%, which has the same conductivity as the epoxy silver glass solder of the Providing state of the art is not only a remarkable silver achieved savings, but also achieved an increase in the proportion of binder, i.e. a lower melt viscosity, better wetting and Ver melting and thus a higher adhesion.
Nun kann allerdings ein erhöhter Glaslotanteil, wie er sich aus der Re duzierung des Silberanteils ergibt, bei unangepaßten Ausdehnungskoeffi zienten die Schockfestigkeit vermindern. Deshalb wird vorgeschlagen, nicht mit Glaslot, sondern mit Aluminiumoxid auszugleichen und so den Ausdehnungskoeffizienten anzupassen.However, an increased proportion of glass solder, as can be seen in the Re Reduction of the silver content results in an unadjusted expansion coefficient reduce the shock resistance. Therefore it is suggested not with glass solder, but with aluminum oxide and so the Expansion coefficients to adjust.
Es sind Ag-Composit-Lote mit einem Ausdehnungkoeffizienten von 10× 10-6 °C und damit spannungsarme Keramik/Silizium-Chip-Verlötungen herstellbar. Weiterhin kann es vorteilhaft sein, das Silber durch andere Metallpulver teilweise zu ersetzen. So vermindern beispielsweise Palla dium-Zusätze die bei Silber-Klebern und -Loten mögliche Migrationsge fahr. Aluminiumnitrid-Pulverzusätze verbessern dagegen infolge der außerordentlich hohen Wärmeleitfähigkeit das thermische Verhalten.Ag composite solders with an expansion coefficient of 10 × 10 -6 ° C and thus low-stress ceramic / silicon chip soldering can be produced. Furthermore, it can be advantageous to partially replace the silver with other metal powders. For example, palladium additives reduce the risk of migration that can occur with silver adhesives and solders. Aluminum nitride powder additives, on the other hand, improve the thermal behavior due to the extraordinarily high thermal conductivity.
Allerdings erfordert eine Verringerung des Glasanteils erhöhte Applika tionsdrücke. Um trotz der hohen Viskosität eine Schrumpfung bzw. Ver festigung des Glaslotes zu ermöglichen, wird die Paste in bekannter Weise auf das vorgewärmte (150°C) Substrat gepreßt. Je nach Größe des Glaslot-Preforms ist eine Preßzeit von 1-30 sec. bei einem Preßdruck von 2-4 bar erforderlich. Anschließend wird mit einem temperaturge steuerten Laserlötgerät das Glaslot-Preform auf 400°C, d.h. bis zum Auf schmelzen aufgeheizt und das Bauteil, z.B. Silicium-Chips, heiß aufge drückt. Hierzu kann ein modifizierter Epoxy-DIE-Bonder verwendet werden. However, reducing the proportion of glass requires increased applications tion pressures. In order to prevent shrinkage or ver To enable the glass solder to strengthen, the paste is known in the Pressed onto the preheated (150 ° C) substrate. Depending on the size of the Glass solder preforms are a pressing time of 1-30 seconds with a pressing pressure of 2-4 bar required. Then with a Temperaturge the laser soldering device controlled the glass solder preform to 400 ° C, i.e. until the opening melt heated and the component, e.g. Silicon chips, heated up presses. A modified epoxy DIE bonder can be used for this.
Beim Laserlöten mit Nd = YAG-Geräten kann die Aufheizung rückseitig durch die für Laserlicht (λ = 1,06 µm) transparente Keramiksubstrate bestrahlt werden.When laser soldering with Nd = YAG devices, the back of the heater can be irradiated through the ceramic substrates that are transparent to laser light ( λ = 1.06 µm).
Nun wird weiterhin vorgeschlagen, um die Kontaktierung und Haftung zu verbessern, daß anschließend an den vorbeschriebenen Arbeitsgang, 30 -60 Minuten bei 400°C ± 30°C in einem Trockenofen getempert wird.Now it continues to suggest contacting and liability improve that after the above-described operation, 30 -60 minutes at 400 ° C ± 30 ° C in a drying oven.
Die Glaslot-Viskosität ist bei 400°C noch so hoch, daß eine bestimmte Zeit bis zur völligen Benetzung benötigt wird. Bei hohen Glaslotanteilen bzw. unangepaßten Ausdehnungskoeffizienten muß anschließend auf eine langsame Abkühlung auf 300°C geachtet werden, vorgeschlagen werden 2 bis 50°C pro Minute.The glass solder viscosity at 400 ° C is still so high that a certain Time until complete wetting is required. With high proportions of glass solder or unadjusted expansion coefficient must then be on a slow cooling to 300 ° C should be observed, 2 to 2 are suggested 50 ° C per minute.
Die Homogenisierung der vorgeschlagenen Glaslotpasten geschieht durch etwa eintägiges Rühren in einem verschlossenen Rührwerk. Die Paste wird anschließend auf einem Walzenstuhl rollend in einer verschlossenen Glas flasche aufbewahrt, evtl. in der Viskosität durch entsprechenden Lösungszusatz den Verarbeitungsanforderungen angepaßt. Die Pastenappli kation kann durch die an sich bekannten Verfahren durchgeführt werden, wie beispielsweise Aufstreichen mittels Spatel, Siebdrucken oder Stem peln mittels einer Stempelvorrichtung, wobei z.B. die Bonder in einer Dicke von 100 ± 50 µm ausgeführt werden.The proposed glass solder pastes are homogenized by stirring for about a day in a closed agitator. The paste will then rolling on a roller mill in a sealed jar bottle kept, possibly in viscosity by appropriate Solution addition adapted to the processing requirements. The paste appli cation can be carried out by the processes known per se, such as spreading with a spatula, screen printing or stem peeling by means of a stamping device, e.g. the bonders in one Thickness of 100 ± 50 microns.
Das weitere Verfahren sieht vor, daß der Pastenaufdruck mit IR-Dunkel strahlung eine Minute lang oder im Trockenschrank bei 150°C getrocknet wird. Chips und kleine Bauelemente werden sofort aufgelegt. Anschließend wird die Schaltung mit einer Quarzglasscheibe oder Glimmerfolie abge deckt mit etwa 1 bar angepreßt und im Trockenschrank zwischen 10 und 30 Minuten lang bei etwa 320°C entgast. Schließlich wird etwa 30 ± 15 Minuten bei 400 ± 20°C unter 1-4 bar Druck angeglast.The further process provides that the paste print with IR dark radiation for one minute or dried in a drying cabinet at 150 ° C becomes. Chips and small components are put on immediately. Subsequently the circuit is abge with a quartz glass plate or mica foil covers with about 1 bar and in the drying cabinet between 10 and 30 Degassed at about 320 ° C for minutes. Eventually, about 30 ± 15 Minutes at 400 ± 20 ° C under 1-4 bar pressure.
Beim automatischen Laser-Glaschipbonden mit dem DIE-Bonder wird im Fer tigungstakt, z.B. 2′′, Silberglaslotpaste dosiert, der Chip aufgebracht, gepreßt und mit dem Lötlaser unter Schutzgas angelötet. Anschließend werden die gebondeten Chips im Wäremeschrank getempert. With automatic laser glass chip bonding with the DIE bonder, Fer clock, e.g. 2 ′ ′, silver glass solder paste dosed, the chip applied, pressed and soldered with the soldering laser under protective gas. Subsequently the bonded chips are annealed in the oven.
Auch die Trocknung, Entgasung, und Anglasung kann in einem Durchlaufofen mit entsprechendem Profil in einem Arbeitsprozeß erfolgen. Bei der nach folgenden CERDIP-Einglasung ist darauf zu achten, daß die Fließtempera tur des Glases von 420°C nicht erreicht wird. Die Abkühlung bei Verwen dung von Silberglaslot mit hohem Ausdehnungskoeffizienten erfolgt von 400° auf 350°C mit 2°C/min, unter 350°C mit 10°C/min und unter 150°C mit 25°C/min.Drying, degassing and glazing can also be carried out in a continuous furnace done with a corresponding profile in one work process. At the after following CERDIP glazing, make sure that the flow tempera of the glass of 420 ° C is not reached. Cooling down at Verwen Silver glass solder with a high expansion coefficient is made by 400 ° to 350 ° C with 2 ° C / min, below 350 ° C with 10 ° C / min and under 150 ° C with 25 ° C / min.
Claims (10)
- a) die Glaslotpaste mit einer Bindemittellösung, z.B. 1%ige Nitrocellu lose/Butylacetat-Lösung, versetzt wird,
- b) diese so versetzte Glaslotpaste nach dem Siebdruck-, Stempel- oder DIE-BOND-Verfahren aufgetragen,
- c) bis auf 300°C aufgeheizt und entgast wird,
- d) dann heiß angepreßt und anschließend die Chips bzw. Bauteile aufge drückt und die sich so ergebende Schaltung verglast wird.
- a) the glass solder paste is mixed with a binder solution, for example 1% nitrocellulose / butyl acetate solution,
- b) this so-added glass solder paste is applied by screen printing, stamping or DIE-BOND process,
- c) is heated up to 300 ° C and degassed,
- d) then pressed hot and then pressed on the chips or components and the resulting circuit is glazed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3837300A DE3837300A1 (en) | 1988-11-03 | 1988-11-03 | Method for producing microelectronic circuits and hybrids |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3837300A DE3837300A1 (en) | 1988-11-03 | 1988-11-03 | Method for producing microelectronic circuits and hybrids |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3837300A1 true DE3837300A1 (en) | 1990-05-23 |
Family
ID=6366387
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3837300A Ceased DE3837300A1 (en) | 1988-11-03 | 1988-11-03 | Method for producing microelectronic circuits and hybrids |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE3837300A1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999063566A2 (en) * | 1998-06-03 | 1999-12-09 | Siemens Aktiengesellschaft | Device for shaping an electron beam, method for producing said device and use thereof |
DE10219951A1 (en) * | 2002-05-03 | 2003-11-13 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Process for encapsulating a component based on organic semiconductors |
DE10350460A1 (en) * | 2003-10-29 | 2005-06-30 | X-Fab Semiconductor Foundries Ag | Method for connecting processed semiconductor wafers in which an electrical connection is made in addition to the fixed insulating assembly and corresponding arrangement |
US8021906B2 (en) | 2006-08-26 | 2011-09-20 | X-Fab Semiconductor Foundries Ag | Hermetic sealing and electrical contacting of a microelectromechanical structure, and microsystem (MEMS) produced therewith |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2735231A1 (en) * | 1977-08-04 | 1979-02-15 | Siemens Ag | Laser beam soldering of electronic components - which are preheated to reduce laser energy required in multiple soldering operations |
EP0006810B1 (en) * | 1978-06-29 | 1982-05-19 | L.C.C.-C.I.C.E. - Compagnie Europeenne De Composants Electroniques | Method of producing an integrated hybrid circuit |
DE3227815A1 (en) * | 1981-08-03 | 1983-02-24 | Johnson Matthey Inc., Malvern, Pa. | METALIZING PASTE CONTAINING SILVER AND THE USE THEREOF FOR GLUING SILICON SEMICONDUCTORS ON SUBSTRATES |
DD206274A1 (en) * | 1982-05-05 | 1984-01-18 | Renate Gesemann | SPINE SURFACES FOR HERMETIZING MODULES WITH GLASS POWDERS |
DE3625873A1 (en) * | 1986-07-31 | 1988-02-04 | Siemens Ag | solder glass, and process for the production of a solder connection between silicon substrates |
-
1988
- 1988-11-03 DE DE3837300A patent/DE3837300A1/en not_active Ceased
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2735231A1 (en) * | 1977-08-04 | 1979-02-15 | Siemens Ag | Laser beam soldering of electronic components - which are preheated to reduce laser energy required in multiple soldering operations |
EP0006810B1 (en) * | 1978-06-29 | 1982-05-19 | L.C.C.-C.I.C.E. - Compagnie Europeenne De Composants Electroniques | Method of producing an integrated hybrid circuit |
DE3227815A1 (en) * | 1981-08-03 | 1983-02-24 | Johnson Matthey Inc., Malvern, Pa. | METALIZING PASTE CONTAINING SILVER AND THE USE THEREOF FOR GLUING SILICON SEMICONDUCTORS ON SUBSTRATES |
DD206274A1 (en) * | 1982-05-05 | 1984-01-18 | Renate Gesemann | SPINE SURFACES FOR HERMETIZING MODULES WITH GLASS POWDERS |
DE3625873A1 (en) * | 1986-07-31 | 1988-02-04 | Siemens Ag | solder glass, and process for the production of a solder connection between silicon substrates |
Non-Patent Citations (3)
Title |
---|
Dr. W. Espe "Werkstoffkunde der Hochvakuumtechnik"Bd. II, VEB Deutscher Verl. der Wissenschaften in Berlin (1962) S. 389-394 * |
F.K. Moghandam in Solid State Techn., Jan. 1984, S. 149-157 * |
Hg. F.N. Sinnadurai: "Handbook of MicroelectronicsPackaging and Intercomection Technologies" Verl. Electrochem. Publications Ltd. ind Ayr /Scotland (1985) S. 39-45 u. 58-61 * |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999063566A2 (en) * | 1998-06-03 | 1999-12-09 | Siemens Aktiengesellschaft | Device for shaping an electron beam, method for producing said device and use thereof |
WO1999063566A3 (en) * | 1998-06-03 | 2000-08-24 | Siemens Ag | Device for shaping an electron beam, method for producing said device and use thereof |
US6570320B1 (en) | 1998-06-03 | 2003-05-27 | Siemens Aktiengesellschaft | Device for shaping an electron beam, method for producing said device and use thereof |
DE10219951A1 (en) * | 2002-05-03 | 2003-11-13 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Process for encapsulating a component based on organic semiconductors |
US6936963B2 (en) | 2002-05-03 | 2005-08-30 | Patent-Treuhand-Gesellschaft Fur Elektrische Gluhlampen Mbh | Process for encapsulating a component made of organic semiconductors |
DE10350460A1 (en) * | 2003-10-29 | 2005-06-30 | X-Fab Semiconductor Foundries Ag | Method for connecting processed semiconductor wafers in which an electrical connection is made in addition to the fixed insulating assembly and corresponding arrangement |
DE10350460B4 (en) * | 2003-10-29 | 2006-07-13 | X-Fab Semiconductor Foundries Ag | Method for producing semiconductor devices having micromechanical and / or microelectronic structures, which result from the fixed connection of at least two semiconductor wafers, and corresponding arrangement |
US8129255B2 (en) | 2003-10-29 | 2012-03-06 | X-Fab Semiconductors Foundries Ag | Firm, insulating and electrically conducting connection of processed semiconductor wafers |
US8021906B2 (en) | 2006-08-26 | 2011-09-20 | X-Fab Semiconductor Foundries Ag | Hermetic sealing and electrical contacting of a microelectromechanical structure, and microsystem (MEMS) produced therewith |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69103807T2 (en) | Process for soldering metallized components to ceramic substrates. | |
KR880000508B1 (en) | Conductor compositions | |
EP1772900B1 (en) | Fabrication method of a device with power semiconductor components including a pressure sintering step | |
DE3414065A1 (en) | Configuration comprising at least one electronic component fixed on a substrate, and process for fabricating a configuration of this type | |
DE102007046901A1 (en) | Production of electrically conductive or heat-conductive component for producing metallic contact between two elements e.g. cooling bodies or solar cells, comprises forming elemental silver from silver compound between contact areas | |
WO2007016908A1 (en) | Method for producing semiconductor components and thin-film semiconductor component | |
DE102012105840B4 (en) | A method of attaching a metal surface to a carrier and method of attaching a chip to a chip carrier | |
DE3725269A1 (en) | METHOD FOR ENCODING MICROELECTRONIC SEMICONDUCTOR AND LAYER CIRCUITS | |
EP2743973A2 (en) | Method for contacting a semiconductor element by welding a contact element to a sintered layer on the semiconductor element and semiconductor component with increased stability against thermomechanical influence | |
KR101503451B1 (en) | Joint material, jointed body | |
DE2132939A1 (en) | Process for making thick film hybrid circuits | |
DE102011088218B4 (en) | Electronic power module with thermal coupling layers to a cooling element and method of manufacture | |
DE102010024520B4 (en) | Method for increasing the thermo-mechanical resistance of a metal-ceramic substrate | |
DE1956501C3 (en) | Integrated circuit arrangement | |
EP3583621A1 (en) | Electronic assembly with a component located between two substrates, and method for producing same | |
EP0215462A2 (en) | Paste for bonding semi-conductors to ceramic underlayers | |
DE3837300A1 (en) | Method for producing microelectronic circuits and hybrids | |
EP2844414B1 (en) | Method of producing a metallised substrate consisting of aluminium | |
DE102013013842B4 (en) | Process for producing metal-ceramic substrates and metal-ceramic substrate | |
DE102008034946B4 (en) | Production method of a noble metal compound | |
CH652737A5 (en) | METALLIC, SILVER-CONTAINING PASTE WITH GLASS AND THEIR USE FOR FASTENING ELECTRONIC COMPONENTS. | |
DE102010036217B4 (en) | Method for the hermetic encapsulation of a microsystem | |
EP0818061A1 (en) | System and process for producing electrically conductive connecting structures and a process for producing circuits and printed circuits | |
DE102008030816B4 (en) | Method for producing a component with at least one organic material | |
DE1590251A1 (en) | Enclosed electrical device and method for making the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
8131 | Rejection |