DE3790800T1 - - Google Patents
Info
- Publication number
- DE3790800T1 DE3790800T1 DE19873790800 DE3790800T DE3790800T1 DE 3790800 T1 DE3790800 T1 DE 3790800T1 DE 19873790800 DE19873790800 DE 19873790800 DE 3790800 T DE3790800 T DE 3790800T DE 3790800 T1 DE3790800 T1 DE 3790800T1
- Authority
- DE
- Germany
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
- H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
- H10D12/031—Manufacture or treatment of IGBTs
- H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0102—Manufacture or treatment of thyristors having built-in components, e.g. thyristor having built-in diode
- H10D84/0105—Manufacture or treatment of thyristors having built-in components, e.g. thyristor having built-in diode the built-in components being field-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US93869386A | 1986-12-05 | 1986-12-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3790800T1 true DE3790800T1 (enExample) | 1989-01-19 |
Family
ID=25471812
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3790800A Expired - Fee Related DE3790800C2 (de) | 1986-12-05 | 1987-12-03 | Verfahren zum Herstellen selbstausgerichteter Halbleiterelemente |
| DE19873790800 Pending DE3790800T1 (enExample) | 1986-12-05 | 1987-12-03 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3790800A Expired - Fee Related DE3790800C2 (de) | 1986-12-05 | 1987-12-03 | Verfahren zum Herstellen selbstausgerichteter Halbleiterelemente |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH0783124B2 (enExample) |
| DE (2) | DE3790800C2 (enExample) |
| WO (1) | WO1988004472A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0277135A (ja) * | 1988-09-13 | 1990-03-16 | Nec Corp | 半導体装置の製造方法 |
| EP0769811A1 (en) * | 1995-10-19 | 1997-04-23 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe | Method of fabricating self aligned DMOS devices |
| JP5514726B2 (ja) * | 2008-08-26 | 2014-06-04 | 本田技研工業株式会社 | 接合型半導体装置およびその製造方法 |
| CN111999632B (zh) * | 2019-05-27 | 2023-02-03 | 合肥晶合集成电路股份有限公司 | Pn结样品的获取方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4443931A (en) * | 1982-06-28 | 1984-04-24 | General Electric Company | Method of fabricating a semiconductor device with a base region having a deep portion |
| US4466176A (en) * | 1982-08-09 | 1984-08-21 | General Electric Company | Process for manufacturing insulated-gate semiconductor devices with integral shorts |
| US4417385A (en) * | 1982-08-09 | 1983-11-29 | General Electric Company | Processes for manufacturing insulated-gate semiconductor devices with integral shorts |
-
1987
- 1987-12-03 JP JP63500663A patent/JPH0783124B2/ja not_active Expired - Lifetime
- 1987-12-03 DE DE3790800A patent/DE3790800C2/de not_active Expired - Fee Related
- 1987-12-03 WO PCT/US1987/003106 patent/WO1988004472A1/en not_active Ceased
- 1987-12-03 DE DE19873790800 patent/DE3790800T1/de active Pending
Non-Patent Citations (5)
| Title |
|---|
| chid., Nov. 1984, pp. 437-439 * |
| Electronic Design 10, 1986, pp. 45-48 * |
| Halbleitertechnologie, I. Ruge, Springer Verlag, 1975, S. 298-299 * |
| IEEE El. Dev. Lett., EDL-6, 1985, pp. 413-415 * |
| Solid State Techn. 1985, pp. 121-128 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63503027A (ja) | 1988-11-02 |
| WO1988004472A1 (en) | 1988-06-16 |
| DE3790800C2 (de) | 1999-08-12 |
| JPH0783124B2 (ja) | 1995-09-06 |